JPS57167688A - Multiwavelength light-emitting and light-receiving element - Google Patents

Multiwavelength light-emitting and light-receiving element

Info

Publication number
JPS57167688A
JPS57167688A JP5286481A JP5286481A JPS57167688A JP S57167688 A JPS57167688 A JP S57167688A JP 5286481 A JP5286481 A JP 5286481A JP 5286481 A JP5286481 A JP 5286481A JP S57167688 A JPS57167688 A JP S57167688A
Authority
JP
Japan
Prior art keywords
light
emitting
layer
receiving
element section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5286481A
Other languages
Japanese (ja)
Inventor
Kazuo Mikami
Mikihiko Shimura
Fumihiko Sato
Osamu Asano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Omron Corp
Original Assignee
Tateisi Electronics Co
Omron Tateisi Electronics Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tateisi Electronics Co, Omron Tateisi Electronics Co filed Critical Tateisi Electronics Co
Priority to JP5286481A priority Critical patent/JPS57167688A/en
Priority to DE19823206069 priority patent/DE3206069A1/en
Publication of JPS57167688A publication Critical patent/JPS57167688A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/125—Composite devices with photosensitive elements and electroluminescent elements within one single body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/14—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
    • H01L31/147—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier
    • H01L31/153—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier formed in, or on, a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier
    • H01L31/173—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier formed in, or on, a common substrate
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/25—Arrangements specific to fibre transmission
    • H04B10/2589—Bidirectional transmission

Abstract

PURPOSE:To contrive to obtain low gain for a light-receiving amplification circuit by a method wherein the semiconductor, on which a light-emitting element section and a light-receiving element section with amplification function are laminated, is formed in single unit per layer construction, two or more of these units are formed in one body, and a light-emitting surface and a light-receiving surface are formed on each unit. CONSTITUTION:The right half part D1 of the element is constructed in such a manner that it contains a light-emitting diode of the double hetero structure wherein an Al0.05Ga0.95As layer 15 is pinched between an N type Al0.02Ga0.8As layer 14 and a P type Al0.2Ga0.8As layer 16 having a high band gas, and also in such a manner that it contains a base-open type hetero junction photo transistor, with a wide emitter, wherein the layer 14 is used as an emitter, a P type GaAs layer 13 is used as a base, and an N type GaAs layer 12 is used as a collector, and then a light-emitting surface 29a and a light-receiving surface 30a are provided. On the other hand, the left half part of the element is constituted in the same manner as the right half part. To be more precise, the two components whereon a light-emitting diode and a photo transistor were laminated are formed in one body and a light-emtting surface and a light-receiving surface are formed on each unit, thereby enabling to allow the light-emitting junction surface of the light-emitting element section, including the wave light spectrum irradiated from the light-emitting junction surface of the light-emitting element section which is corresponding to the light-receiving surface, to have light-receiving spectrum sensitivity characteristics.
JP5286481A 1981-02-23 1981-04-07 Multiwavelength light-emitting and light-receiving element Pending JPS57167688A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP5286481A JPS57167688A (en) 1981-04-07 1981-04-07 Multiwavelength light-emitting and light-receiving element
DE19823206069 DE3206069A1 (en) 1981-02-23 1982-02-19 Light transmitting and receiving device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5286481A JPS57167688A (en) 1981-04-07 1981-04-07 Multiwavelength light-emitting and light-receiving element

Publications (1)

Publication Number Publication Date
JPS57167688A true JPS57167688A (en) 1982-10-15

Family

ID=12926728

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5286481A Pending JPS57167688A (en) 1981-02-23 1981-04-07 Multiwavelength light-emitting and light-receiving element

Country Status (1)

Country Link
JP (1) JPS57167688A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000014813A1 (en) * 1998-09-04 2000-03-16 Seiko Epson Corporation Device with optical communication means
WO2004107301A1 (en) * 2003-05-30 2004-12-09 Nokia Corporation Photoelectric element and terminal equipment including a photoelectric element
JP2017063067A (en) * 2015-09-21 2017-03-30 豊田合成株式会社 Light emitting element
WO2017179431A1 (en) * 2016-04-14 2017-10-19 日本電気株式会社 Optical fiber sensor, and optical fiber sensor system

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000014813A1 (en) * 1998-09-04 2000-03-16 Seiko Epson Corporation Device with optical communication means
US6430325B1 (en) 1998-09-04 2002-08-06 Seiko Epson Corporation Device having a light transmission device
US6775428B2 (en) 1998-09-04 2004-08-10 Seiko Epson Corporation Device having a light transmission device
WO2004107301A1 (en) * 2003-05-30 2004-12-09 Nokia Corporation Photoelectric element and terminal equipment including a photoelectric element
CN100423046C (en) * 2003-05-30 2008-10-01 诺基亚有限公司 Photoelectric element and terminal equipment including a photoelectric element
JP2017063067A (en) * 2015-09-21 2017-03-30 豊田合成株式会社 Light emitting element
US10069039B2 (en) 2015-09-21 2018-09-04 Toyoda Gosei Co., Ltd Light-emitting device
WO2017179431A1 (en) * 2016-04-14 2017-10-19 日本電気株式会社 Optical fiber sensor, and optical fiber sensor system
US10859408B2 (en) 2016-04-14 2020-12-08 Nec Corporation Optical fiber sensor and optical fiber sensor system

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