JPS5778192A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS5778192A
JPS5778192A JP15400280A JP15400280A JPS5778192A JP S5778192 A JPS5778192 A JP S5778192A JP 15400280 A JP15400280 A JP 15400280A JP 15400280 A JP15400280 A JP 15400280A JP S5778192 A JPS5778192 A JP S5778192A
Authority
JP
Japan
Prior art keywords
elements
light
laser
difference
units
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15400280A
Other languages
Japanese (ja)
Inventor
Kouji Shinohara
Yoshito Nishijima
Yoshio Kawabata
Hirokazu Fukuda
Kosaku Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15400280A priority Critical patent/JPS5778192A/en
Publication of JPS5778192A publication Critical patent/JPS5778192A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3222—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIVBVI compounds, e.g. PbSSe-laser

Abstract

PURPOSE:To obtain electromagnetic wave of wide wavelength from infrared range to microwave range by forming a plurality of tunable laser elements on the surface of a common substrate formed of semiconductors having a plurality of constituent elements, supplying predetermined currents to the respective elements and generating laser lights of different wavelengths from each other. CONSTITUTION:Two mesa units 2a, 2b are formed on the surface of multi-element semiconductor substrate 1 formed of elements, e.g., Pb, Sn, Te, etc., and P-N junctions J1 and J2 are respectively formed in these mesa units to form laser elements. Then, forward currents sufficient to operate laser actions for the junctions J1 and J2 with variable current source 3, thereby carrying out laser oscillation. In this structure, difference is provided in the crystalline composition in the meas units 2a and 2b to provide different current values and emitting light wavelengths, thereby producing difference vibrations. In this manner, difference is produced at the point of producing mode skip, and when one junction does not emit a light, the light emitted from the other junction is covered on the range in which the light is not emitted.
JP15400280A 1980-10-31 1980-10-31 Semiconductor laser device Pending JPS5778192A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15400280A JPS5778192A (en) 1980-10-31 1980-10-31 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15400280A JPS5778192A (en) 1980-10-31 1980-10-31 Semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS5778192A true JPS5778192A (en) 1982-05-15

Family

ID=15574762

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15400280A Pending JPS5778192A (en) 1980-10-31 1980-10-31 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS5778192A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0385668A2 (en) * 1989-02-24 1990-09-05 Laser Photonics, Inc. Diode laser
US5119388A (en) * 1989-02-24 1992-06-02 Laser Photonics, Inc. Low tuning rate PbTe/PbEuSeTe buried quantum well tunable diode lasers and arrays
JP2006253525A (en) * 2005-03-14 2006-09-21 Hitachi Ltd Wavelength variable semiconductor laser equipment

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52155078A (en) * 1976-06-18 1977-12-23 Toshiba Corp Semiconductor light emitting device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52155078A (en) * 1976-06-18 1977-12-23 Toshiba Corp Semiconductor light emitting device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0385668A2 (en) * 1989-02-24 1990-09-05 Laser Photonics, Inc. Diode laser
US5119388A (en) * 1989-02-24 1992-06-02 Laser Photonics, Inc. Low tuning rate PbTe/PbEuSeTe buried quantum well tunable diode lasers and arrays
JP2006253525A (en) * 2005-03-14 2006-09-21 Hitachi Ltd Wavelength variable semiconductor laser equipment

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