ATE525755T1 - Lichtemittierendes bauelement und verfahren zu seiner herstellung - Google Patents

Lichtemittierendes bauelement und verfahren zu seiner herstellung

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Publication number
ATE525755T1
ATE525755T1 AT02801546T AT02801546T ATE525755T1 AT E525755 T1 ATE525755 T1 AT E525755T1 AT 02801546 T AT02801546 T AT 02801546T AT 02801546 T AT02801546 T AT 02801546T AT E525755 T1 ATE525755 T1 AT E525755T1
Authority
AT
Austria
Prior art keywords
light emitting
light
emitting device
coating layers
production
Prior art date
Application number
AT02801546T
Other languages
English (en)
Inventor
Kunihiro Izuno
Kouki Matsumoto
Shinichi Nagahama
Masahiko Sano
Tomoya Yanamoto
Keiji Sakamoto
Original Assignee
Nichia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Corp filed Critical Nichia Corp
Application granted granted Critical
Publication of ATE525755T1 publication Critical patent/ATE525755T1/de

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    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
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    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
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    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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