JPS617671A - 窒化ガリウム半導体装置 - Google Patents

窒化ガリウム半導体装置

Info

Publication number
JPS617671A
JPS617671A JP59127935A JP12793584A JPS617671A JP S617671 A JPS617671 A JP S617671A JP 59127935 A JP59127935 A JP 59127935A JP 12793584 A JP12793584 A JP 12793584A JP S617671 A JPS617671 A JP S617671A
Authority
JP
Japan
Prior art keywords
gan
electrodes
layer
semiconductor device
onto
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59127935A
Other languages
English (en)
Inventor
Toshiharu Kawabata
川端 敏治
Susumu Furuike
進 古池
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP59127935A priority Critical patent/JPS617671A/ja
Publication of JPS617671A publication Critical patent/JPS617671A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/385Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48464Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/4901Structure
    • H01L2224/4903Connectors having different sizes, e.g. different diameters
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26Materials of the light emitting region
    • H01L33/30Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 産業上の利用分野 窒化ガリウム(以下GaNと記す)は直接遷移型の広い
バンドギャップを有する半導体で青色発光素子の材料と
して有望視されている。
本発明は電極形成工程ならびに組立工程が容易なGaN
 半導体装置に関するものである。
従来例の構成とその問題点 GaN は大きな単結晶がなかなか実現できず、通常、
電気的に絶縁体であるサファイア基板上に気相法により
エピタキシャル成長させたものが用いられている。
またGaNはイオン結合性の強い結晶でシリコン(Si
)や砒化ガリウム(GaAs)などの共有結合性の結晶
に比較して結晶が不完全で窒素(N)の空孔などの結晶
欠陥を多く含んでいる。このGaNの結晶では窒素の空
孔はドナーとして振舞うので、不純物を添加しなくても
低抵抗のn型半導体となる。そこで、アクセグタ不純物
を添加してもそのほとんどが、電荷補償で費やされ、せ
いぜい絶縁体になるか、あるいは高抵抗のp型(π型と
もいう)の半導体になる程度でなかなか低抵抗のp型半
導体が得られない。このためGaNの青色発光素子は完
全なpn接合ではなく、概ね1(π)−n接合構造であ
る。
第1図は従来のGaN半導体装置の概略断面図であり、
サファイア基板1の上に、たとえば、厚さ100μ程度
のn型GaN層2と、さらに、この上に亜鉛(Zn)を
添加した高比抵抗のi(π)型GaN層3を、たとえば
、厚さ1μm程度に形成したもので、このi(π)型G
aN層3上には金属の電極層4を設けてそれに金属細線
6を圧着する。
ところが、サファイアは電気的に完全な絶縁体であり、
n型G a N層2への電極形成はなかなか面倒である
そこで、表面i(π)型GaN層3に開口を形成し、n
型GaN層2と接触する方法も考えられるが、GaN結
晶は化学的に安定性の高い物質で薬品による化学的なエ
ツチングが困難である。また非常に硬い物質であるため
に、機械的な窓あけも困難である。そこで通常は第1図
に示すようにn型GaN層2の側面にインジウム電極部
6を設け、他方の電極部7との間を針状細線8により金
属システム9に電気的に接続する方策が用いられる。
しかし、この部位へのインジウム電極6形成ならびに針
状細線8の接続作業は至難であり、製造性の悪いもので
あった。
発明の目的 本発明は、素子の上面と下面に電極を形成することがで
きるGaN半導体装置を提供するものである。
発明の構成 本発明は、要約するに絶縁性結晶基板上に形成したpま
たはi(π)−n接合を有する結晶層GaNを、前記絶
縁性結晶基板から剥離し、そのGaN結晶層の表面およ
び剥離面に、それぞれ電極を付設したものであり、これ
により、G a N半導体装置の上面と下面に電極を形
成することができるので、GaN半導体装置の電極工程
と組立工程において通常の写真技術と、ワイヤボンディ
ング技術が使用できるようになり、GaN半導体装置の
製造性が大幅に向上する。
実施例の説明 つぎに本発明を実施例により詳しく説明する。
サファイア基板上に有機金属熱分解法(MOCVD法)
により、トリメチルアルミニウムー(TMA)とアンモ
ニア(NH3)を反応させ、1000℃の温度でまずA
ffiN層を約5μm成長させる。さらに成長温度を9
50Cに低下させ、トリメチルアルミニウムの代わりに
トリメチルガリウム(TMG)を導入しアンモニア(C
H3)と反応させ、n型のGaN層を約100μmの厚
さに成長させ、さらに引きつつきアクセプタ不純物とし
てジメチル亜鉛(DMZ)により亜鉛を添加した絶縁性
のGaN層を約1μmの厚さに成長させる。
次にこうして成長したウエノ・を沸騰した*あるいは塩
酸等の酸性溶液あるいは、水酸化ナトリウム等のアルカ
リ溶液に浸すと、GaNとサファイアは化学的に極めて
安定な物質であるが、AαNには弱い潮解性の性質があ
るために、AQNだけが選択的に溶解除去される。Ga
N層の上面と下面に金属膜たとえばアルミニウム(AQ
)膜を蒸着形成し、これにパターンニングを行い電極を
形成する。
第2図は金属ステム9上に本発明のGaN半導体装置を
組み込んだものの概略断面図であり、銀ペーストにより
下面電極1oと金属ステム9を電気的に接続し、上面電
極4に関しては、金属細線5を用いて通常のワイヤボン
ディング技術で電極接続を行ったものである。
発明の効果 本発明によれば、GaN半導体装置を絶縁体のサファイ
ア基板から剥離されたGaN結晶層の両面に電極形成し
たので、GaN半導体装置の上面と下面に電極形成が容
易に可能であり、低抵抗性の電極形成ならびにその製造
性が格段に向上する。
【図面の簡単な説明】
第1図は従来例のGaN半導体装置の概略断面図、第2
図は本発明のGaN半導体装置の概略断面図である。 1・・・・・・サファイア基板、2・・・・・・n型G
aN層、3・・・・・・i(π)型G a N層、4,
1o・・・・・・電極層、5・・・・・・金属細線(ボ
ンディングワイヤL6,7・・・・・・インジウム電極
、8・・・・・・針状細線。 代理人の氏名 弁理士 中 尾 敏 男 ほか1名第1
図 ○         ■ 第2図 ○         ■

Claims (1)

    【特許請求の範囲】
  1. 成長用絶縁性結晶基板から剥離させたpまたはi(π)
    −n接合を有するGaN結晶の表面および剥離面に、そ
    れぞれ、直接電極を付設したことを特徴とする窒化ガリ
    ウム半導体装置。
JP59127935A 1984-06-21 1984-06-21 窒化ガリウム半導体装置 Pending JPS617671A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59127935A JPS617671A (ja) 1984-06-21 1984-06-21 窒化ガリウム半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59127935A JPS617671A (ja) 1984-06-21 1984-06-21 窒化ガリウム半導体装置

Publications (1)

Publication Number Publication Date
JPS617671A true JPS617671A (ja) 1986-01-14

Family

ID=14972271

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59127935A Pending JPS617671A (ja) 1984-06-21 1984-06-21 窒化ガリウム半導体装置

Country Status (1)

Country Link
JP (1) JPS617671A (ja)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5278433A (en) * 1990-02-28 1994-01-11 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride group compound with double layer structures for the n-layer and/or the i-layer
US5408120A (en) * 1992-07-23 1995-04-18 Toyoda Gosei Co., Ltd. Light-emitting device of gallium nitride compound semiconductor
US5733796A (en) * 1990-02-28 1998-03-31 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride group compound
JP2000277804A (ja) * 1995-06-15 2000-10-06 Nichia Chem Ind Ltd 窒化物半導体素子の製造方法及び窒化物半導体素子、並びに発光素子
US6362017B1 (en) 1990-02-28 2002-03-26 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride group compound
US6830992B1 (en) 1990-02-28 2004-12-14 Toyoda Gosei Co., Ltd. Method for manufacturing a gallium nitride group compound semiconductor
US7105857B2 (en) 2002-07-08 2006-09-12 Nichia Corporation Nitride semiconductor device comprising bonded substrate and fabrication method of the same
US7301175B2 (en) 2001-10-12 2007-11-27 Nichia Corporation Light emitting apparatus and method of manufacturing the same

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6984536B2 (en) 1990-02-28 2006-01-10 Toyoda Gosei Co., Ltd. Method for manufacturing a gallium nitride group compound semiconductor
US5733796A (en) * 1990-02-28 1998-03-31 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride group compound
US5278433A (en) * 1990-02-28 1994-01-11 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride group compound with double layer structures for the n-layer and/or the i-layer
US6362017B1 (en) 1990-02-28 2002-03-26 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride group compound
US6472690B1 (en) 1990-02-28 2002-10-29 Toyoda Gosei Co., Ltd. Gallium nitride group compound semiconductor
US6472689B1 (en) 1990-02-28 2002-10-29 Toyoda Gosei Co., Ltd. Light emitting device
US6593599B1 (en) 1990-02-28 2003-07-15 Japan Science And Technology Corporation Light-emitting semiconductor device using gallium nitride group compound
US6607595B1 (en) 1990-02-28 2003-08-19 Toyoda Gosei Co., Ltd. Method for producing a light-emitting semiconductor device
US6830992B1 (en) 1990-02-28 2004-12-14 Toyoda Gosei Co., Ltd. Method for manufacturing a gallium nitride group compound semiconductor
US5408120A (en) * 1992-07-23 1995-04-18 Toyoda Gosei Co., Ltd. Light-emitting device of gallium nitride compound semiconductor
USRE36747E (en) * 1992-07-23 2000-06-27 Toyoda Gosei Co., Ltd Light-emitting device of gallium nitride compound semiconductor
JP2000277804A (ja) * 1995-06-15 2000-10-06 Nichia Chem Ind Ltd 窒化物半導体素子の製造方法及び窒化物半導体素子、並びに発光素子
US7301175B2 (en) 2001-10-12 2007-11-27 Nichia Corporation Light emitting apparatus and method of manufacturing the same
US7390684B2 (en) 2001-10-12 2008-06-24 Nichia Corporation Light emitting apparatus and method of manufacturing the same
US7105857B2 (en) 2002-07-08 2006-09-12 Nichia Corporation Nitride semiconductor device comprising bonded substrate and fabrication method of the same
US7378334B2 (en) 2002-07-08 2008-05-27 Nichia Corporation Nitride semiconductor device comprising bonded substrate and fabrication method of the same
US8030665B2 (en) 2002-07-08 2011-10-04 Nichia Corporation Nitride semiconductor device comprising bonded substrate and fabrication method of the same

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