TWM317075U - Heat dissipation structure of light emitting diode - Google Patents

Heat dissipation structure of light emitting diode Download PDF

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Publication number
TWM317075U
TWM317075U TW095215085U TW95215085U TWM317075U TW M317075 U TWM317075 U TW M317075U TW 095215085 U TW095215085 U TW 095215085U TW 95215085 U TW95215085 U TW 95215085U TW M317075 U TWM317075 U TW M317075U
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Taiwan
Prior art keywords
light
emitting diode
heat dissipation
base
heat
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TW095215085U
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Chinese (zh)
Inventor
Yun Dai
Ruei-Feng Dai
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Yun Dai
Ruei-Feng Dai
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Application filed by Yun Dai, Ruei-Feng Dai filed Critical Yun Dai
Priority to TW095215085U priority Critical patent/TWM317075U/en
Priority to GB0707506A priority patent/GB2442074A/en
Priority to FR0754718A priority patent/FR2905223A3/en
Priority to NL1033863A priority patent/NL1033863C1/en
Priority to DE202007007581U priority patent/DE202007007581U1/en
Publication of TWM317075U publication Critical patent/TWM317075U/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3675—Cooling facilitated by shape of device characterised by the shape of the housing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01068—Erbium [Er]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/641—Heat extraction or cooling elements characterized by the materials

Description

M317075 八、新型說明: 【新型所屬之技術領域】 本創作係有關-種發光二極體之散熱結構，尤指一種於散熱基座其中一面 7成有狀彳θ於政熱基座之表面處理有—辦彖膜層，並於前述凹狀槽内固 又名又光-極組日日片’於政熱基座之兩侧設有兩導電金屬#，並分別以一導線 /、發光一極肢曰曰片之一電極相連接，進而可於不需另言支其它p c板或絕緣物， 直接於散減座上設發光二極體及導電金屬片，而可使發光二極體之熱源直接 _ n座财H轴大巾§提高發光二極體之散熱效率及壽命，並具減 化構件以提高生產效率者。 【先前技術】 按近年來因人類對於能源的大量耗費，而在能源大量之開採下，已有敲 原短缺的危機，而朗應能驗缺，世界各國之科學家均致力於「能源開發」 p W原」方蝴d力研發耗錄之燃㈣擎、電動機及各類省電照明言 莆而，、中之省電知、明设備則首推耗電量低之「發光二極體」。 相仏大夕數人均知’「發光二極體」因具雜低之耗電雜，因而目前已兩 大量運用於各類照明，但過去發光二鋪因製造技術尚未成熟且效率不佳，^ 度較低，因此，繼到相當大之限制，而近來在各業者致力研發新技㈣ 下么光-極體之売度已大幅提高，進而使其被廣泛的使用於各類昭明，讀 過去根林可能取代之汽車職，亦已到了純熟之階段。 但儘管發光二鋪之亮度已大祕高，但職產生⑽物是散熱不佳之 、，目别之㈣度發光二極_其輪㈣輪大，轴使其產生較高之熱度， M317075 •且因發光二極體之製造係產生完全密閉之封袭方式，進而使其高温 而#材效提rij散熱效率’是為目敍功率（高紐）發光二減有待突破之 瓶頸。 【新型内容】 〈所欲解決之技術問題&gt; 本創作人有祕習知發光二極體散触術無法有效突破及有待改善之缺 失，盼能提供-突破性之設計，明進實祕果，乃潛^研思、設計組製，綜 •集其多年從事相關產品設計產鎖之專業技術知識與實務經驗及研思設計所得之 成果，終研究出本創作-種發光二極體之散熱結構，以提供使用者。 &lt;解決問題之技術手段〉 本創作之主要目的储錄絲座之表面纽有—絕賴層，進而可不需 另叹其ti P C板或絕緣物，直接於散熱基座上設發光二極體晶片及導電金屬 片’且該絕緣膜層係於散熱基座表面直接生成，其間並無間隙，且該散熱基座 係以高導金屬製成’而可使發光二極體之熱源餘由散錄座進行熱交換，進 _ 而大幅提高發光二極體之散熱效率。 本創作之次一目的主要係藉於散熱基座之表面處理有一絕緣膜層，進而可 不而另又其匕pC板或絕緣物，直接於散熱基座上設發光二極體及導電金屬 片’具減化構件以提高生產效率者。 為使@審查委員月b更了解本創作之結構特徵及其功效，兹配合圖式並詳細 說明於后。 【實施方式】 請參閱本創作第-圖'第二圖及第三圖所示，本創作發光二極體之散熱結 6 M317075 .構，其主要赌散編⑴之細形成—_面（i丨），於該酿面(工 1)上’形成有—凹狀槽（1 2 )，於散熱基座⑴之表面，處理有一絕緣膜 層⑷’於前述陳槽（1 2 )内，醜—發光二極體晶片⑵，於散熱基 座⑴上，設有至少—組貫通之組配孔（1 3 )，於每-組配孔（i 3 )處均 組配有一—（1 3 2 )之導電金屬以1 3 1 )，而可藉嵌人部（i 3 2 ) ^入並穿過前述散熱基座⑴之組配孔（1 3 )，並將嵌人部（χ 3 2 )之端 4 (13 3 )賴加工，而使導電金屬片（i 3丄）與散熱基座⑴組配一 乂線（21)將發光二極體晶片（2)之二電極與導電金屬片 (1 3 1)相連接，同時於配接好導線（2工）後，於凹陷面（⑴包括凹 狀槽（⑶内，填充有高透光性樹脂⑷，以將發光二極體晶片⑵予以 封衣同N·於政熱基座⑴之上方，組設有—中央孔洞（3 2 )處具光學透 鏡（3 3 )之光學透鏡架（3 )，藉光學透鏡架（3 )所設之扣鉤（31)扣固 於散熱基座⑴底緣’進而藉由表面具絕緣膜層⑷之散熱基座⑴，而 可不而另B又其匕p c板或絕緣物，直接於散熱基座（1)上設發光二極體晶片 (2)及導電金屬片（1 3 而可使發光二極體晶片⑵之獅直接由散 熱基座（1)進行熱交換，進而大幅提高發光二極體晶片⑵之散熱效率， 並具減化構相提高生產鱗者，且，騎前賴具光學魏（3 3 )之光學 透鏡架（3 )與散熱基座⑴結合後使其扣釣（3工)不凸出散熱基座⑴， 於散熱基座（1 )兩側設有凹槽（！ 4 )，而可於組裝時將扣鉤（3 i )嵌入設 於散熱基座（1 )兩側之簡（]_ 4 )而使扣鉤（3 i )鉤扣於凹槽（工4) 底緣，進而使光學透鏡架（3 )與散熱基座⑴結合一體者（如第四圖、第 圖及第/、®所示），其巾越基座（丨）係為熱交換極佳之金屬材料所製成， M317075 .其可為金、銀、銅、鐵、鋁或其它合金材料者，此外，為使散熱基座（)矸 更快速的賴·之目的，於賴基座（丨）之瞻槽（丨2)喊面，不處 理絕緣膜層（A )，並於凹狀槽（i 2)内表面直接處理有利於焊接之金屬薄嫉 層（1 2 1)’並將该發光二極體晶片（2 )直接焊接於該金屬薄膜層(」2 1) 上’進而使發光二極體晶片（2)之熱源直接由散熱基座⑴產生更快速的 達熱交換效果者（如第二八圖所示），其中該金屬薄膜層（丄2 Ί )可為錄金、 鎳銀或鎳銅等金屬薄膜者。 再睛翏閱第七圖第八圖及第九圖所示，係本創作之另一實施例，其主要係 於散熱基座⑸之頂面形成—雜槽（5 2)，於前勒狀槽（5 2)内，固 設-發光二極體晶片⑵，於散熱基座⑸之頂面周邊，設有至少—組凹陷 部（5 1 )’於每―凹陷部（5 1 )處均形成有一凸柱（5 1 i )，於散熱基座 (5 )之表面，處理有一絕緣膜層⑷，於前述每一凹陷部（5工），各組設 一導電金屬片（5 1 2 )，於每—導電金屬片（5 1 2 )上，均設有供前述凸柱 (5 1 1 )穿過之孔洞(5丄3 )，而使導電金屬片（512 )組設於散埶基座 ⑸之每-凹陷部（5工）時可達定位不轉動者，並分別以一導線（^ ) 將發光二極觸⑵之二電極( 5丄2 )相連接，同時於配 接好導線（2 1)後’於凹狀槽（5 2 )内，填充有高透光性樹脂⑷，以將 發光二極體；⑵予嗎，同時於散熱基座⑸之上方，組設 央孔洞（3 2 )處姆魏（3 3 )之綱⑶，藉槪齡（ 所設t扣鉤（3 1 )扣固於散驗U)扣、槽（5 3 )或底緣，進而藉岭 面具^緣襲⑷之散編⑸，糊峨p㈣絕緣物，^ 接於散熱基座（5)上設發光二極體晶片（2)及導電金屬片（5丄2 )，。 M317075 使發光二極體晶片⑵之熱源直接由散熱基座（5)進行熱交換，進而大幅 提焉發先:極體晶片（2)之散熱效率，並具減化構件以提高生產效率者，此 卜為使㈣導I金屬片（5 i 2 )能更穩固，於前述散熱基座（5 )鱼光學 透鏡架（3 )間，另組設中央具鏤空部（6 !)之峡框⑹，糊定框⑹ 之鐘空部（61)周邊，設有供編柱（5 m欽之缺口（62)，_ 合後之固定框（6 )將導電金屬片（5 1 2 )抵敎位者。 別迷之先學透鏡（3 3 )及光學透鏡架⑶，除分離式外，亦可將光學透 鏡（3 3)及光學透鏡架（3)—體成型製成者，該光學透鏡（3⑴及光學 透鏡架⑶魏細瓣使物嶋，1，她繼基座⑴ ⑸之表面包她孔（i 3 )，㈣纽有—絕梅（a)外，亦可依 所需絕緣部份以局部方式處理有一絕緣膜層A)，同時於前述散熱基座（工） (5)頂面之凹狀槽（i 2) ( 5 2 )内，可依所需固設至少—個以上之發 極體晶片（2)者。 一 综上_，糊·雜讀綠料二鍾之散熱_、雜構件以朝 ⑥生產效率輸έ，為-甚編性、·㈣她較創作，實已 符合新型專利之給舆要件，編提咖申請，尚祈責審查委員能詳予審 查’亚早日賜准本案專利，實為德便。 【圖式簡單說明】 第-圖係本_試舉其巾—較佳實_之立體分解圖。 第二圖係本創作之組合剖示圖。M317075 VIII. New Description: [New Technology Field] This creation is related to the heat dissipation structure of a kind of light-emitting diode, especially one surface of a heat-dissipating base, which has a shape of 彳θ on the surface of the political pedestal. There is a film layer, and in the concave groove, the solid name and the light-pole group Japanese-day film 'the two sides of the Yujiao thermal base are provided with two conductive metals#, and one wire/lighting one respectively One of the pole limbs is connected to the electrodes, so that the other LED boards or insulators can be omitted, and the light-emitting diodes and the conductive metal sheets are directly disposed on the diffusion seat, so that the light-emitting diodes can be The heat source is directly _ n seated H-axis towel § to improve the heat dissipation efficiency and life of the light-emitting diode, and reduce the components to improve production efficiency. [Prior Art] In recent years, due to the large amount of energy consumed by human beings, and under the exploitation of a large amount of energy, there has been a crisis of shortage of the original, and Lang should be able to test the shortage. Scientists all over the world are committed to "energy development" p W original "Fang" d-force research and development of burning (four) engine, electric motor and various types of power-saving lighting, and the power-saving know-how, Ming equipment is the first to push the "light-emitting diode" low power consumption . Everyone knows that the "light-emitting diode" has been used in various types of lighting because of its low power consumption. However, in the past, the second lighting shop was not mature due to its manufacturing technology and its efficiency was not good. The degree is low, therefore, following the considerable restrictions, and recently the efforts of various industry players to develop new technologies (4), the light-polar body has been greatly improved, and thus it has been widely used in various types of Zhaoming, read the past The automobile position that Genlin may replace has also reached the stage of being skilled. However, although the brightness of the illuminating two shop has been a big secret, but the production of (10) is poor heat dissipation, and the (four) degree illuminating dipole _ its wheel (four) wheel is large, the shaft makes it produce a higher heat, M317075 • and Because the manufacturing system of the light-emitting diode produces a completely sealed sealing method, and thus its high temperature, the heat-efficiency efficiency of the material is a bottleneck for the power reduction (high-key). [New Content] <Technical Problems to Be Solved> The creator has a secret knowledge that the light-emitting diodes can not effectively break through and need to be improved, and hope to provide - breakthrough design, clear and secret , is a potential, research, design, system, comprehensive, set its professional technical knowledge and practical experience in the design and production of related products for many years, and the results of research and design, and finally study the creation - the heat dissipation of the light-emitting diode Structure to provide users. &lt;Technical means to solve the problem> The main purpose of this creation is to store the surface of the silk seat with a layer of detachment, so that it is possible to provide a light-emitting diode directly on the heat-dissipating base without sighing its ti PC board or insulation. The wafer and the conductive metal piece 'and the insulating film layer are directly formed on the surface of the heat dissipation base without a gap therebetween, and the heat dissipation base is made of a highly conductive metal', and the heat source of the light emitting diode can be dispersed The recording station performs heat exchange, and the heat dissipation efficiency of the light-emitting diode is greatly improved. The second purpose of this creation is mainly to have an insulating film layer on the surface of the heat sink base, and then another pC board or insulator, and a light emitting diode and a conductive metal piece directly on the heat sink base. A person with reduced components to increase production efficiency. In order to make the @review committee month b better understand the structural features and functions of this creation, we will cooperate with the schema and explain in detail later. [Embodiment] Please refer to the second figure and the third figure of this creation, as shown in the second and third figures. The heat-dissipating junction of the light-emitting diode of this creation is 6 M317075. The main gambling (1) is formed by fine--丨), on the frying surface (work 1), a concave groove (1 2 ) is formed, and on the surface of the heat dissipation base (1), an insulating film layer (4) is processed in the aforementioned groove (1 2 ), ugly - a light-emitting diode chip (2), on the heat-dissipating base (1), at least one set of through-holes (1 3 ) are provided, and each of the set-type holes (i 3 ) is provided with one - (1 3 2 The conductive metal is 1 3 1 ), and the embedded portion (i 3 2 ) can be inserted into and through the assembly hole (1 3 ) of the heat dissipation base (1), and the embedded portion (χ 3 2 ) The end 4 (13 3 ) depends on the processing, and the conductive metal piece (i 3 丄) and the heat dissipation pedestal (1) are combined with a 乂 line (21) to align the two electrodes of the illuminating diode chip (2) with the conductive metal piece ( 1 3 1) Connected, at the same time after the wire is connected (2 working), on the concave surface ((1) includes a concave groove ((3), filled with a high light transmissive resin (4) to give the light emitting diode chip (2) The seal is the same as N. Yuzheng Thermal Base (1) The optical lens holder (3) having an optical lens (3 3 ) at the central hole (3 2 ) is fastened to the heat dissipation base by a hook (31) provided by the optical lens holder (3) The bottom edge' is further provided with a heat-dissipating pedestal (1) having an insulating film layer (4) on the surface, and a B-plate or an insulator is provided on the surface, and a light-emitting diode chip (2) is directly disposed on the heat-dissipating pedestal (1). And the conductive metal piece (13) enables the lion of the light-emitting diode chip (2) to be directly exchanged by the heat-dissipating pedestal (1), thereby greatly improving the heat-dissipating efficiency of the light-emitting diode chip (2), and improving the reduced conformation The scales are produced, and the optical lens holder (3) of the optical Wei (3 3 ) is coupled with the heat dissipation base (1) before the ride, and the buckle (3) does not protrude from the heat dissipation base (1). (1) Grooves (! 4) are provided on both sides, and the hooks (3 i ) can be embedded in the simple (]_ 4 ) provided on both sides of the heat dissipation base (1 ) to make the hooks (3) i) hooking the bottom edge of the groove (work 4), and then integrating the optical lens holder (3) with the heat dissipation base (1) (as shown in the fourth figure, the figure and the /, ®), Pedestal丨) is made of metal materials with excellent heat exchange, M317075. It can be made of gold, silver, copper, iron, aluminum or other alloy materials. In addition, in order to make the heat sink base () faster, For the purpose, the surface of the susceptor (丨2) is shouted, the insulating film layer (A) is not treated, and the metal thin layer suitable for soldering is directly processed on the inner surface of the concave groove (i 2). (1 2 1)' and soldering the LED chip (2) directly to the metal thin film layer ("2 1)", thereby causing the heat source of the light emitting diode chip (2) to be directly generated by the heat sink base (1) A faster heat exchange effect (as shown in Figure 8), wherein the metal film layer (丄2 Ί) can be a metal film such as gold, nickel silver or nickel copper. Looking at the eighth and ninth diagrams of the seventh figure, another embodiment of the present invention is mainly formed on the top surface of the heat dissipation base (5) - a miscellaneous groove (52), which is in front of the shape In the slot (52), the fixed-light-emitting diode chip (2) is disposed at a periphery of the top surface of the heat dissipation base (5), and at least a group of recessed portions (5 1 ) are provided at each of the recessed portions (5 1 ). Forming a stud (5 1 i ), on the surface of the heat dissipation base (5), processing an insulating film layer (4), and forming a conductive metal piece (5 1 2 ) in each of the recesses (5 work) Each of the conductive metal sheets (5 1 2 ) is provided with a hole (5丄3) through which the protruding post (5 1 1 ) passes, and the conductive metal piece (512) is set on the dilated base. Each of the seats (5) can be positioned without rotation, and the two electrodes (5丄2) of the two-pole contact (2) are connected by a wire (^), and the wires are connected at the same time. (2 1) After 'in the concave groove (52), filled with a high light transmissive resin (4) to light the diode; (2), while at the same time above the heat sink base (5), set up a central hole ( 3 2) The division of Mwei (3 3 ) By means of age (the t-hook (3 1 ) is fastened to the scatter test U) buckle, groove (5 3 ) or bottom edge, and then by the ridge mask ^ edge attack (4) of the loose (5), paste p (four) insulation , ^ is connected to the heat sink base (5) is provided with a light-emitting diode chip (2) and a conductive metal piece (5 丄 2). M317075 enables the heat source of the light-emitting diode chip (2) to be directly exchanged by the heat-dissipating pedestal (5), thereby greatly improving the heat-dissipating efficiency of the polar body wafer (2) and reducing the component to improve the production efficiency. In order to make the (4) I-metal piece (5 i 2 ) more stable, between the aforementioned heat-dissipating pedestal (5) fish optical lens holder (3), a funnel frame with a hollow portion (6!) in the center is also set up (6) , around the bell empty part (61) of the paste box (6), there is a bracket (5 m chin gap (62), _ the rear fixed frame (6) to hold the conductive metal piece (5 1 2) Do not fascinate the lens (3 3 ) and the optical lens holder (3). In addition to the separate type, the optical lens (33) and the optical lens holder (3) can also be formed into a body. 3 (1) and the optical lens holder (3) the Wei smear makes the object 1, 1, she follows the surface of the pedestal (1) (5), her hole (i 3 ), (4) New — 绝 ( (a), can also be insulated according to the required part The insulating film layer A) is processed in a local manner, and at least one or more of the concave grooves (i 2) ( 5 2 ) of the top surface of the heat sink base (5) can be fixed as needed. Hair body Wafer (2). One comprehensive _, paste, miscellaneous reading green material two minutes of heat dissipation _, miscellaneous components to 6 production efficiency, for - editorial, (4) she is more creative, has been in line with the new patent The application of the essay, the application of the coffee maker, the praying review committee can give a detailed examination of the 'Asia's early grant of the patent in this case, it is a virtue. [Simplified illustration] The first picture is _ try its towel - compare The stereoscopic exploded view of Jiashi_. The second figure is a combined cutaway view of this creation.

t A圖係本創倾散熱基座之凹狀槽喊面直接處理有利於焊接之金屬薄 層亚將4發光二極體；直接烊接於該金屬編層上之實施例剖雜。 M317075 第二圖係本創作之立體圖 第四圖 分解圖 例立體 係本創作於散熱基座兩側設有供光學透鏡架扣顺入之凹槽實施 第五圖係細w之組合剖稍。 乍於散熱基座兩側設有供光學透鏡架扣絲入凹槽之立體圖 弟七圖係摘料—實蘭之立齡觸。 “圖係本_ ―實補之組合剖相。 第九圖係本_另—實關之立_。 ί 件符號說明】 (1)(5 )散熱基座 (12) (5 2 )凹狀槽 (13) 組配孔 (13 2)歲入部 (1 4 )凹槽 (2 )發光二極體晶片 (3) 光學透鏡架 (3 2)中央孔洞 (4) 高透光性樹脂 (51)凹陷部 (5 1 3 )孔、;同 (6)固定框 (6 2 )缺口 (A)絕緣膜層 (11)凹陷面 (1 2 1 )金屬薄臈層 (13 1 )(512)導電金屬 (13 3)端部 (21)導線 (3 1)扣鉤 (3 3)光學透鏡 (511)凸柱 (5 3)扣槽 (6 1)鏤空部The t-picture is a concave groove surface of the inflating heat-dissipating base, which directly processes the metal thin layer of the sub-conductor 4 light-emitting diode which is advantageous for welding; the embodiment directly connected to the metal braided layer is dissected. M317075 The second picture is a perspective view of the creation. The fourth picture is an exploded view. The three-dimensional system is created on both sides of the heat-dissipation base for the optical lens holder to be inserted into the groove. The fifth picture is a combination of thin w.乍The three sides of the heat-receiving base are provided with a three-dimensional image for the optical lens frame to be inserted into the groove. "The diagram is the combination of _ _ 实 补 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 Slot (13) Assembled hole (13 2) Incremental part (1 4 ) Groove (2) Light-emitting diode chip (3) Optical lens holder (3 2) Center hole (4) High light-transmissive resin (51) Recessed portion (5 1 3 ) hole, same as (6) fixing frame (6 2 ) notch (A) insulating film layer (11) concave surface (1 2 1 ) metal thin layer (13 1 ) (512) conductive metal (13 3) end (21) wire (3 1) clasp (3 3) optical lens (511) stud (5 3) buckle groove (6 1) hollow

Claims (1)

HQ. 1Z, 系 p L1 Ο ^ 第095215085號修正頁 M317075 九、申請專利範圍: 1、一種發光二極體之散熱結構，其包括： u、基座，於該散熱基座之其中—面形成有__面，並於凹陷面上設 一凹狀槽，_啸槽之散絲座上，設有至少—組貫通之減孔，於散 热基座之表面，處理有一絕緣膜層·； -發光二極體晶片，係固設於前述散熱基座之凹狀槽内； 八一組導電金屬片，係分別組設於前述散熱基座之每一組配孔處，每一導電 金屬片觸成有—柱狀欽部，而可藉嵌人部嵌人並穿過前述散熱基座之組配 孔’亚將嵌人部之端部沖壓加工，而使導電金屬片與散熱基座組配—體，每一 導電金屬片係以導線分別與前述發光二極體晶片之二電極接點連結；及 门匕光|±納θ ’係填充於$述散熱基座之凹狀槽内，以將發光二極體晶片 予以封裝。 2、 如巾請專娜圍第丨撕述發光二鋪之散無構，其巾麗散熱基座之 表面可依所需絕緣部份以局部方式處理有一絕緣膜層者。 3、 如申請專利範圍第！項所述發光二極體之散熱結構，其中於該散熱基座之 凹狀槽内，可依所需固設至少一個以上之發光二極體晶片者。 4、 如申請專利範圍帛丄項所述發光二極體之散熱結構，其中該散熱基座係為 熱交換極佳之金屬材料所製成。 5、如申請專利範圍第丄項所述發光二極體之散熱結構，其中於散熱基座上方， 組5又有一中央孔洞處具光學透鏡之光學透鏡架，並藉光學透鏡架所設之扣鉤扣 固於散熱基座底緣者。 6、如申請專利範圍第5項所述發光二極體之散熱結構，其中該光學透鏡與光 11 12. 2 3 年月日修正補充 第095215085號修正頁 M317075 學透鏡架可―體成雜成者。 7、-觀光二極體之散熱結構，其包括 月…、座於_熱_之其中—面形成有1狀槽，於散熱基座之表 面，處理有1_層，但前述凹狀槽内表面不處理有絕緣膜層，· 一辑膜層，餘糊舰座姆版絲，該金屬薄膜層 具有利於焊接之特性； 么光i曰曰片，係固設於前述散熱基座之凹狀槽内該金屬薄膜層上； 一組導電金屬片，係分別組設於前述散熱基座之周邊，每—導電金屬片係 以導線分別與前述發光二極體晶片之二電極接點連結；及 以將發光二極體晶片 咼透光性樹脂，係填充於前述散熱基座之凹狀槽内， 予以封裝。 8、一種發光二極體之散熱結構，其包括： 政熱基座，於_熱基座之其中—面形成有_凹狀槽，於前述凹狀槽周 緣之散熱基顧面處，設有，於每部朗形成有—凸柱，於 熱基座之表面，處理有一絕緣膜層； 一組導電金屬片，係、設於前述散熱基座之每-凹陷部處，於每-導電金屬 片上，均«供前述賴基座_部所設錄穿過之細，而使導電金屬片組 設於散熱基座之每一凹陷部時可達定位不轉動者； ，一發光二極體日日日片，侧設於前述散熱基座之凹狀槽内，其二電極接點係 以導線與前述兩導電金屬片焊接連結； 高透光性樹脂，係填充於前述散熱基座之凹狀槽内，以將該發光二極體予 以封裝。 12 M317075 年 月 ,録:'S^~ '^率亨 -9、如申請專利範圍第8項所述發光二極體之散細姐 勒95215085號修正頁一 熱交換極佳之金屬材料所製成。其中5亥散熱基座係為 10、 如申請專·圍第8項所述料二極體之散埶 ^ …、、、&quot;構，其中於該散熱基座 之凹狀t内，可依所需固設至少一個以上之發光二極體晶片者。 11、 如申請專利範圍第8項所述發光二極體 , …、、Q構，·其中於該散熱基座 5又有至…以上具凸柱之凹陷部，並於每—凹陷部組配一導電全屬片。 i 2、如靖利範嶋項所述發光二極體之散熱結構，其中於娜基座 之表面可依職_部份以局部方式處理有_絕緣騎者。 ' 13、如帽專·顧述發光二蹄 _ _ ^ ^ …、、、、。構，其中於散熱基座上 方，組扠有一中央孔洞處具光學透鏡之光學透y ^亚精光學透鏡架所設之扣 鉤扣固於散熱基座底緣者。 1 4、如申請專利範圍第i 3項所述發光二極體之散熱結構，其中於麟基座 絲學透綱，狀射綱败_，__谢刪’ 叹有供刖述凸柱嵌入之缺口，而於組合後之 1 I了將導電金屬片抵壓定位者。 15、如申請專利範圍第13項所述發光二極體之散 .τ 政熱結構，其中該光學透鏡 與光學透鏡架可一體成型製成者。 13 M317075 m. 12. 13 年月日修正補 第 095215085 號修 ί[-:π 七、指定代表圖： (一) 本案指定代表圖為：第（一）圖。 (二) 本代表圖之元件符號簡單說明： (1)散熱基座 (1 ，（1 2 )凹狀槽 (13)組配孔 (1 (13 2)嵌入部 (1 (2)發光二極體晶片 (2 (3)光學透鏡架 (3 (3 2)中央孔洞 (3 1 )凹面 31 )導電金屬片 3 3 )端部 1 )導線 1 )扣鉤 3)光學透鏡HQ. 1Z, Department p L1 Ο ^ Amendment No. 095215085 M317075 IX. Patent application scope: 1. A heat dissipating structure of a light-emitting diode, comprising: u, a base, forming a surface of the heat dissipation base There is a __ surface, and a concave groove is formed on the concave surface, and at least a set of through holes are formed on the loose wire seat of the whistling groove, and an insulating film layer is disposed on the surface of the heat dissipation base; The light-emitting diode chip is fixed in the concave groove of the heat dissipation base; eight sets of conductive metal pieces are respectively disposed at each of the pair of matching holes of the heat dissipation base, and each conductive metal piece touches Formed into a column-shaped part, and the end portion of the embedded portion can be stamped by the embedded hole embedded in the human body and passed through the heat-dissipating base, and the conductive metal piece is combined with the heat-dissipating base. a body, each of the conductive metal sheets is respectively connected to the two electrode contacts of the light emitting diode chip by wires; and the threshold light |± nano θ ' is filled in the concave groove of the heat dissipation base, The light emitting diode chip is packaged. 2, If the towel, please cover the second floor of the enamel, and the surface of the radiant heat sink base can be treated with a layer of insulating film in a partial manner according to the required insulating part. 3. If you apply for a patent scope! The heat dissipation structure of the light-emitting diode, wherein at least one of the light-emitting diode chips can be fixed in the concave groove of the heat dissipation base. 4. The heat dissipation structure of the light-emitting diode according to the scope of the patent application, wherein the heat dissipation base is made of a metal material with excellent heat exchange. 5. The heat dissipation structure of the light-emitting diode according to the scope of the patent application, wherein the group 5 has an optical lens holder with an optical lens at the central hole and a buckle provided by the optical lens holder. The hook is fastened to the bottom edge of the heat sink base. 6. The heat dissipating structure of the light-emitting diode according to item 5 of the patent application scope, wherein the optical lens and the light 11 12.3 3 day correction and supplement No. 095215085 revision page M317075 can be made into a body By. 7. The heat dissipation structure of the sightseeing diode, which includes a month... and a seat in the _heat_-the surface is formed with a 1-shaped groove, on the surface of the heat dissipation base, the treatment has a 1_ layer, but the concave groove is inside The surface is not treated with an insulating film layer, and a film layer is formed. The metal film layer has the property of being favorable for soldering; the light film is fixed to the concave surface of the heat sink base. a plurality of conductive metal sheets are respectively disposed on the periphery of the heat dissipation base, and each of the conductive metal sheets is connected to the two electrode contacts of the light emitting diode chip by wires; The light-emitting diode wafer is made of a light-transmissive resin filled in a concave groove of the heat dissipation base and packaged. A heat dissipation structure for a light-emitting diode, comprising: a thermal base, wherein a concave groove is formed on a surface of the heat base, and a heat dissipation base is disposed on a periphery of the concave groove Forming a stud in each of the ridges, and processing an insulating film layer on the surface of the thermal pedestal; a set of conductive metal sheets, each of which is disposed at each of the recessed portions of the heat sink base, and each of the conductive metals On the film, both are provided for the thinning of the susceptor _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The solar film is disposed in a concave groove of the heat dissipation base, and the two electrode contacts are soldered and connected to the two conductive metal sheets by a wire; the high light transmissive resin is filled in the concave shape of the heat dissipation base. The light-emitting diode is encapsulated in the groove. 12 M317075 Month, recorded: 'S^~ '^ rate heng-9, as claimed in the scope of the patent scope of the eighth item of the light-emitting diodes of the fine sister 95215085 revision page, a hot exchange of excellent metal materials to make. The 5 MW heat sink base is 10, for example, the 埶 、 , , , 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 It is required to fix at least one of the light-emitting diode chips. 11. The light-emitting diode according to item 8 of the patent application scope, ..., Q structure, wherein the heat-dissipating base 5 has a recessed portion having a convex column and above, and is assembled in each concave portion. A conductive all piece. i 2. The heat-dissipating structure of the light-emitting diode according to the Jingli Fanyu item, wherein the surface of the ena base can be treated in a partial manner with the _insert rider. '13, such as caps, Gu Shu, two hoofs _ _ ^ ^ ...,,,,. The structure is disposed above the heat dissipation base, and the group fork has a central aperture at the optical aperture of the optical lens, and the hook provided by the optical lens holder is fastened to the bottom edge of the heat dissipation base. 1 4. The heat-dissipating structure of the light-emitting diode according to the i-th item of the patent application scope, wherein the Yu-based pedestal is well-disciplined, and the shape of the beam is defeated _,__谢谢's sigh for the purpose of embedding the column The gap is formed, and after the combination, the conductive metal piece is pressed against the locator. 15. The thermal structure of the light-emitting diode according to claim 13 of the invention, wherein the optical lens and the optical lens holder are integrally formed. 13 M317075 m. 12. Amendment No. 095215085 13 [-: π VII. Designated representative map: (1) The representative representative of the case is: (1). (2) A brief description of the symbol of the representative figure: (1) Heat sink base (1, (1 2) concave groove (13) set with holes (1 (13 2) embedded part (1 (2) light-emitting diode Body wafer (2 (3) optical lens holder (3 (3 2) central hole (3 1) concave surface 31) conductive metal piece 3 3 ) end 1) wire 1) clasp 3) optical lens
TW095215085U 2006-08-25 2006-08-25 Heat dissipation structure of light emitting diode TWM317075U (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
TW095215085U TWM317075U (en) 2006-08-25 2006-08-25 Heat dissipation structure of light emitting diode
GB0707506A GB2442074A (en) 2006-08-25 2007-04-18 Heat sinking LED package
FR0754718A FR2905223A3 (en) 2006-08-25 2007-04-26 LED module for illumination in motor vehicle, has connecting wires connected between printed circuit boards and positive and negative connections of LED chip, and translucent resin formed on slot of heat sink and covering LED chip
NL1033863A NL1033863C1 (en) 2006-08-25 2007-05-16 LED module.
DE202007007581U DE202007007581U1 (en) 2006-08-25 2007-05-29 Led module

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TW095215085U TWM317075U (en) 2006-08-25 2006-08-25 Heat dissipation structure of light emitting diode

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TWM317075U true TWM317075U (en) 2007-08-11

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DE (1) DE202007007581U1 (en)
FR (1) FR2905223A3 (en)
GB (1) GB2442074A (en)
NL (1) NL1033863C1 (en)
TW (1) TWM317075U (en)

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TWI418066B (en) * 2009-10-01 2013-12-01
CN103154607A (en) * 2010-09-13 2013-06-12 Bk科技株式会社 LED light source structure with high illuminating power and improved heat dissipating characteristics
CN114122241A (en) * 2022-01-28 2022-03-01 江西鸿利光电有限公司 Light emitting device and method of manufacturing the same

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FR2905223A3 (en) 2008-02-29

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