CN115298826A - 三维铁电存储器及电子设备 - Google Patents

三维铁电存储器及电子设备 Download PDF

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Publication number
CN115298826A
CN115298826A CN202080098708.9A CN202080098708A CN115298826A CN 115298826 A CN115298826 A CN 115298826A CN 202080098708 A CN202080098708 A CN 202080098708A CN 115298826 A CN115298826 A CN 115298826A
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China
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memory
layer
electrode
block
storage
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Pending
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CN202080098708.9A
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English (en)
Inventor
魏侠
杨喜超
张岩
秦健鹰
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Huawei Technologies Co Ltd
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Huawei Technologies Co Ltd
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Publication of CN115298826A publication Critical patent/CN115298826A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/10—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the top-view layout

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  • Semiconductor Memories (AREA)

Abstract

本申请实施例属于存储设备技术领域，具体涉及一种三维铁电存储器及电子设备。本申请实施例旨在解决相关技术中三维铁电存储器的尺寸较大，难以实现三维铁电存储器的小型化的问题。本申请实施的三维铁电存储器及电子设备，存储层包括参考层，在参考层背离基底的一侧设置有第一介质层，第一介质层包括多个间隔设置的第一存储块，在参考层朝向基底的一侧设置有第二介质层，第二介质层包括多个间隔设置的第二存储块；第一介质层和第二介质层共用一个参考层，与一个参考层对应设置一个介质层相比，减少了参考层的数量，进而在垂直于基底的方向减小了三维铁电存储器的尺寸，进而减小了三维铁电存储器的体积，实现了三维铁电存储器的小型化。

Description

PCT国内申请，说明书已公开。

Claims (18)

  1. PCT国内申请，权利要求书已公开。
CN202080098708.9A 2020-04-29 2020-04-29 三维铁电存储器及电子设备 Pending CN115298826A (zh)

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PCT/CN2020/087763 WO2021217493A1 (zh) 2020-04-29 2020-04-29 三维铁电存储器及电子设备

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CN115298826A true CN115298826A (zh) 2022-11-04

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CN (1) CN115298826A (zh)
WO (1) WO2021217493A1 (zh)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101878529B (zh) * 2007-11-29 2012-07-04 松下电器产业株式会社 非易失性存储装置及其制造方法
CN101350360B (zh) * 2008-08-29 2011-06-01 中国科学院上海微系统与信息技术研究所 一种三维堆叠非相变所致电阻转换存储装置及其制造方法
JP2011029258A (ja) * 2009-07-22 2011-02-10 Toshiba Corp 半導体記憶装置
CN109378313B (zh) * 2018-09-23 2020-10-30 复旦大学 一种低功耗三维非易失性存储器及其制备方法

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