WO2008149605A1 - 抵抗変化素子およびこれを備えた半導体装置 - Google Patents

抵抗変化素子およびこれを備えた半導体装置 Download PDF

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Publication number
WO2008149605A1
WO2008149605A1 PCT/JP2008/057393 JP2008057393W WO2008149605A1 WO 2008149605 A1 WO2008149605 A1 WO 2008149605A1 JP 2008057393 W JP2008057393 W JP 2008057393W WO 2008149605 A1 WO2008149605 A1 WO 2008149605A1
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WO
WIPO (PCT)
Prior art keywords
variable resistance
same
resistance element
semiconductor device
transition metal
Prior art date
Application number
PCT/JP2008/057393
Other languages
English (en)
French (fr)
Inventor
Kensuke Takahashi
Takashi Nakagawa
Original Assignee
Nec Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corporation filed Critical Nec Corporation
Priority to US12/602,933 priority Critical patent/US20100176363A1/en
Priority to JP2009517744A priority patent/JPWO2008149605A1/ja
Publication of WO2008149605A1 publication Critical patent/WO2008149605A1/ja

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H10N70/023—Formation of switching materials, e.g. deposition of layers by chemical vapor deposition, e.g. MOCVD, ALD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/041—Modification of switching materials after formation, e.g. doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)

Abstract

　第１の電極と、第１の電極上に形成された抵抗変化材料層と、この抵抗変化材料層上に形成された第２の電極を有し、前記抵抗変化材料層は、遷移金属Ｍ１の酸化物である遷移金属酸化物が非遷移金属元素Ｍ２の酸化物を含み非結晶化された材料からなる抵抗変化素子。
PCT/JP2008/057393 2007-06-04 2008-04-16 抵抗変化素子およびこれを備えた半導体装置 WO2008149605A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/602,933 US20100176363A1 (en) 2007-06-04 2008-04-16 Variable resistance element and semiconductor device provided with the same
JP2009517744A JPWO2008149605A1 (ja) 2007-06-04 2008-04-16 抵抗変化素子およびこれを備えた半導体装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-147927 2007-06-04
JP2007147927 2007-06-04

Publications (1)

Publication Number Publication Date
WO2008149605A1 true WO2008149605A1 (ja) 2008-12-11

Family

ID=40093433

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/057393 WO2008149605A1 (ja) 2007-06-04 2008-04-16 抵抗変化素子およびこれを備えた半導体装置

Country Status (3)

Country Link
US (1) US20100176363A1 (ja)
JP (1) JPWO2008149605A1 (ja)
WO (1) WO2008149605A1 (ja)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009177181A (ja) * 2008-01-23 2009-08-06 Samsung Electronics Co Ltd 抵抗性メモリ素子及びその製造方法
WO2009101785A1 (ja) * 2008-02-12 2009-08-20 Panasonic Corporation 不揮発性半導体記憶装置及びその製造方法
WO2010079816A1 (ja) * 2009-01-09 2010-07-15 日本電気株式会社 半導体装置及びその製造方法
JP2010251352A (ja) * 2009-04-10 2010-11-04 Panasonic Corp 不揮発性記憶素子及びその製造方法
WO2011024271A1 (ja) * 2009-08-26 2011-03-03 株式会社 東芝 不揮発性記憶素子及び不揮発性記憶装置
JP2011066285A (ja) * 2009-09-18 2011-03-31 Toshiba Corp 不揮発性記憶素子および不揮発性記憶装置
JP2011204785A (ja) * 2010-03-24 2011-10-13 Toshiba Corp 不揮発性記憶装置
KR101113014B1 (ko) * 2010-06-15 2012-02-27 서울대학교산학협력단 스페이서 구조를 갖는 저항성 메모리 소자 및 그 제조방법
JP2013239728A (ja) * 2009-06-25 2013-11-28 Nec Corp 半導体装置及びその製造方法
JP2015111712A (ja) * 2009-11-11 2015-06-18 日本電気株式会社 抵抗変化素子、半導体装置、および抵抗変化素子の形成方法
JP2015185782A (ja) * 2014-03-26 2015-10-22 ルネサスエレクトロニクス株式会社 半導体装置
US9570682B2 (en) 2009-08-28 2017-02-14 Panasonic Intellectual Property Management Co., Ltd. Semiconductor memory device and method of manufacturing the same

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CN103477575A (zh) * 2011-04-20 2013-12-25 富士通光器件株式会社 检测装置、光接收装置、检测方法以及光接收方法
US9112148B2 (en) 2013-09-30 2015-08-18 Taiwan Semiconductor Manufacturing Co., Ltd. RRAM cell structure with laterally offset BEVA/TEVA
US11075339B2 (en) 2018-10-17 2021-07-27 Cerfe Labs, Inc. Correlated electron material (CEM) devices with contact region sidewall insulation
US11476416B2 (en) 2018-03-29 2022-10-18 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device and method for manufacturing the same
US11437573B2 (en) * 2018-03-29 2022-09-06 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device and method for manufacturing the same
US20200259083A1 (en) * 2019-02-08 2020-08-13 Arm Limited Method for fabrication of a cem device

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JP2006245322A (ja) * 2005-03-03 2006-09-14 Sony Corp 記憶素子及びメモリ
JP2007053125A (ja) * 2005-08-15 2007-03-01 National Institute Of Advanced Industrial & Technology スイッチング素子

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US7141489B2 (en) * 2003-05-20 2006-11-28 Burgener Ii Robert H Fabrication of p-type group II-VI semiconductors
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Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8853759B2 (en) 2008-01-23 2014-10-07 Samsung Electronics Co., Ltd. Resistive memory devices and methods of manufacturing the same
JP2009177181A (ja) * 2008-01-23 2009-08-06 Samsung Electronics Co Ltd 抵抗性メモリ素子及びその製造方法
JPWO2009101785A1 (ja) * 2008-02-12 2011-06-09 パナソニック株式会社 不揮発性半導体記憶装置及びその製造方法
WO2009101785A1 (ja) * 2008-02-12 2009-08-20 Panasonic Corporation 不揮発性半導体記憶装置及びその製造方法
US8537605B2 (en) 2008-02-12 2013-09-17 Panasonic Corporation Nonvolatile semiconductor memory device having coplanar surfaces at resistance variable layer and wiring layer and manufacturing method thereof
JP4563504B2 (ja) * 2008-02-12 2010-10-13 パナソニック株式会社 不揮発性半導体記憶装置及びその製造方法
US10256400B2 (en) 2009-01-09 2019-04-09 Nec Corporation Semiconductor device and method of manufacturing the same
JP5382001B2 (ja) * 2009-01-09 2014-01-08 日本電気株式会社 半導体装置及びその製造方法
US9406877B2 (en) 2009-01-09 2016-08-02 Nec Corporation Semiconductor device and method of manufacturing the same
WO2010079816A1 (ja) * 2009-01-09 2010-07-15 日本電気株式会社 半導体装置及びその製造方法
JP2010251352A (ja) * 2009-04-10 2010-11-04 Panasonic Corp 不揮発性記憶素子及びその製造方法
US9059028B2 (en) 2009-06-25 2015-06-16 Nec Corporation Semiconductor device and method for manufacturing same
JP2013239728A (ja) * 2009-06-25 2013-11-28 Nec Corp 半導体装置及びその製造方法
WO2011024271A1 (ja) * 2009-08-26 2011-03-03 株式会社 東芝 不揮発性記憶素子及び不揮発性記憶装置
US9570682B2 (en) 2009-08-28 2017-02-14 Panasonic Intellectual Property Management Co., Ltd. Semiconductor memory device and method of manufacturing the same
US8450715B2 (en) 2009-09-18 2013-05-28 Kabushiki Kaisha Toshiba Nonvolatile metal oxide memory element and nonvolatile memory device
JP2011066285A (ja) * 2009-09-18 2011-03-31 Toshiba Corp 不揮発性記憶素子および不揮発性記憶装置
JP2015111712A (ja) * 2009-11-11 2015-06-18 日本電気株式会社 抵抗変化素子、半導体装置、および抵抗変化素子の形成方法
US9231207B2 (en) 2009-11-11 2016-01-05 Nec Corporation Method for forming resistance changing element capable of operating at low voltage
JP2011204785A (ja) * 2010-03-24 2011-10-13 Toshiba Corp 不揮発性記憶装置
KR101113014B1 (ko) * 2010-06-15 2012-02-27 서울대학교산학협력단 스페이서 구조를 갖는 저항성 메모리 소자 및 그 제조방법
JP2015185782A (ja) * 2014-03-26 2015-10-22 ルネサスエレクトロニクス株式会社 半導体装置

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US20100176363A1 (en) 2010-07-15
JPWO2008149605A1 (ja) 2010-08-19

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