WO2009072201A1 - 抵抗変化素子とその製造方法、及び抵抗変化素子を用いた半導体記憶装置 - Google Patents

抵抗変化素子とその製造方法、及び抵抗変化素子を用いた半導体記憶装置 Download PDF

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Publication number
WO2009072201A1
WO2009072201A1 PCT/JP2007/073545 JP2007073545W WO2009072201A1 WO 2009072201 A1 WO2009072201 A1 WO 2009072201A1 JP 2007073545 W JP2007073545 W JP 2007073545W WO 2009072201 A1 WO2009072201 A1 WO 2009072201A1
Authority
WO
WIPO (PCT)
Prior art keywords
resistance change
change element
manufacturing
storage device
semiconductor storage
Prior art date
Application number
PCT/JP2007/073545
Other languages
English (en)
French (fr)
Inventor
Hideyuki Noshiro
Original Assignee
Fujitsu Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Limited filed Critical Fujitsu Limited
Priority to JP2009544535A priority Critical patent/JP5110088B2/ja
Priority to PCT/JP2007/073545 priority patent/WO2009072201A1/ja
Publication of WO2009072201A1 publication Critical patent/WO2009072201A1/ja
Priority to US12/785,763 priority patent/US8350244B2/en

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of the switching material, e.g. layer deposition
    • H10N70/026—Formation of the switching material, e.g. layer deposition by physical vapor deposition, e.g. sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Patterning of the switching material
    • H10N70/063—Patterning of the switching material by etching of pre-deposited switching material layers, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/10—Resistive cells; Technology aspects
    • G11C2213/15—Current-voltage curve
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/30—Resistive cell, memory material aspects
    • G11C2213/32—Material having simple binary metal oxide structure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/30—Resistive cell, memory material aspects
    • G11C2213/34—Material includes an oxide or a nitride
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/50—Resistive cell structure aspects
    • G11C2213/52—Structure characterized by the electrode material, shape, etc.
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/79—Array wherein the access device being a transistor

Abstract

　抵抗変化素子は、遷移金属窒化物を含む第１の電極と、貴金属又は貴金属酸化物を含む第２の電極と、前記第１の電極と前記第２の電極との間に配置された遷移金属酸化膜と、を有する。
PCT/JP2007/073545 2007-12-06 2007-12-06 抵抗変化素子とその製造方法、及び抵抗変化素子を用いた半導体記憶装置 WO2009072201A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009544535A JP5110088B2 (ja) 2007-12-06 2007-12-06 抵抗変化素子とその製造方法、及び抵抗変化素子を用いた半導体記憶装置
PCT/JP2007/073545 WO2009072201A1 (ja) 2007-12-06 2007-12-06 抵抗変化素子とその製造方法、及び抵抗変化素子を用いた半導体記憶装置
US12/785,763 US8350244B2 (en) 2007-12-06 2010-05-24 Variable resistance device, method for manufacturing variable resistance device, and semiconductor storage device using variable resistance device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/073545 WO2009072201A1 (ja) 2007-12-06 2007-12-06 抵抗変化素子とその製造方法、及び抵抗変化素子を用いた半導体記憶装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/785,763 Continuation US8350244B2 (en) 2007-12-06 2010-05-24 Variable resistance device, method for manufacturing variable resistance device, and semiconductor storage device using variable resistance device

Publications (1)

Publication Number Publication Date
WO2009072201A1 true WO2009072201A1 (ja) 2009-06-11

Family

ID=40717386

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/073545 WO2009072201A1 (ja) 2007-12-06 2007-12-06 抵抗変化素子とその製造方法、及び抵抗変化素子を用いた半導体記憶装置

Country Status (3)

Country Link
US (1) US8350244B2 (ja)
JP (1) JP5110088B2 (ja)
WO (1) WO2009072201A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011155159A (ja) * 2010-01-28 2011-08-11 Semiconductor Technology Academic Research Center 抵抗変化型メモリとその制御方法及び製造方法

Families Citing this family (10)

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Publication number Priority date Publication date Assignee Title
KR20130007572A (ko) * 2010-03-16 2013-01-18 쌘디스크 3디 엘엘씨 금속 산화물 저항률 전환층과 함께 사용하기 위한 하부 전극
US8841648B2 (en) 2010-10-14 2014-09-23 Sandisk 3D Llc Multi-level memory arrays with memory cells that employ bipolar storage elements and methods of forming the same
US8389971B2 (en) 2010-10-14 2013-03-05 Sandisk 3D Llc Memory cells having storage elements that share material layers with steering elements and methods of forming the same
US8853099B2 (en) * 2011-12-16 2014-10-07 Intermolecular, Inc. Nonvolatile resistive memory element with a metal nitride containing switching layer
JP5480233B2 (ja) * 2011-12-20 2014-04-23 株式会社東芝 不揮発性記憶装置、及びその製造方法
US9130162B2 (en) 2012-12-20 2015-09-08 Taiwan Semiconductor Manufacturing Company, Ltd. Resistance variable memory structure and method of forming the same
KR20140109032A (ko) * 2013-03-05 2014-09-15 에스케이하이닉스 주식회사 반도체 장치 및 그 제조방법, 상기 반도체 장치를 포함하는 마이크로프로세서, 프로세서, 시스템 데이터 저장 시스템 및 메모리 시스템
US10916772B2 (en) 2017-04-05 2021-02-09 Samsung Electronics Co., Ltd. High capacity sodium-ion battery positive electrode material
US11088323B2 (en) * 2018-08-30 2021-08-10 Taiwan Semiconductor Manufacturing Company, Ltd. Top electrode last scheme for memory cell to prevent metal redeposit
JP7092968B2 (ja) * 2018-09-22 2022-06-29 豊田合成株式会社 半導体装置

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JP2006080259A (ja) * 2004-09-09 2006-03-23 Matsushita Electric Ind Co Ltd 抵抗変化素子およびそれを用いた不揮発性メモリ、ならびにこれらの製造方法
JP2007180202A (ja) * 2005-12-27 2007-07-12 Sharp Corp 可変抵抗素子とその製造方法ならびにそれを備えた半導体記憶装置

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JP3401843B2 (ja) * 1993-06-21 2003-04-28 ソニー株式会社 半導体装置における多層配線の形成方法
US20050130448A1 (en) * 2003-12-15 2005-06-16 Applied Materials, Inc. Method of forming a silicon oxynitride layer

Patent Citations (2)

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JP2006080259A (ja) * 2004-09-09 2006-03-23 Matsushita Electric Ind Co Ltd 抵抗変化素子およびそれを用いた不揮発性メモリ、ならびにこれらの製造方法
JP2007180202A (ja) * 2005-12-27 2007-07-12 Sharp Corp 可変抵抗素子とその製造方法ならびにそれを備えた半導体記憶装置

Non-Patent Citations (1)

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Title
MASAYUKI FUJIMOTO ET AL.: "Ti02 anatase nanolayer on TiN thin film exhibiting high- speed bipolar resistive switching", APPL.PHYS.LETT., vol. 89, 28 November 2006 (2006-11-28), pages 223509, XP012087369, DOI: doi:10.1063/1.2397006 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011155159A (ja) * 2010-01-28 2011-08-11 Semiconductor Technology Academic Research Center 抵抗変化型メモリとその制御方法及び製造方法

Also Published As

Publication number Publication date
US20100230655A1 (en) 2010-09-16
JPWO2009072201A1 (ja) 2011-04-21
JP5110088B2 (ja) 2012-12-26
US8350244B2 (en) 2013-01-08

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