WO2008081741A1 - 抵抗変化型素子および抵抗変化型記憶装置 - Google Patents
抵抗変化型素子および抵抗変化型記憶装置 Download PDFInfo
- Publication number
- WO2008081741A1 WO2008081741A1 PCT/JP2007/074556 JP2007074556W WO2008081741A1 WO 2008081741 A1 WO2008081741 A1 WO 2008081741A1 JP 2007074556 W JP2007074556 W JP 2007074556W WO 2008081741 A1 WO2008081741 A1 WO 2008081741A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- electrode
- resistance variable
- storage device
- resistance
- variable element
- Prior art date
Links
- 239000000463 material Substances 0.000 abstract 1
- 229910052596 spinel Inorganic materials 0.000 abstract 1
- 239000011029 spinel Substances 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8836—Complex metal oxides, e.g. perovskites, spinels
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/30—Resistive cell, memory material aspects
- G11C2213/31—Material having complex metal oxide, e.g. perovskite structure
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/72—Array wherein the access device being a diode
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
Abstract
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008513046A JP4202411B2 (ja) | 2006-12-28 | 2007-12-20 | 抵抗変化型素子および抵抗変化型記憶装置 |
US12/518,400 US8018760B2 (en) | 2006-12-28 | 2007-12-20 | Resistance variable element and resistance variable memory apparatus |
CN200780029617.4A CN101501851B (zh) | 2006-12-28 | 2007-12-20 | 电阻变化型元件和电阻变化型存储装置 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006-354218 | 2006-12-28 | ||
JP2006354218 | 2006-12-28 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2008081741A1 true WO2008081741A1 (ja) | 2008-07-10 |
Family
ID=39588425
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2007/074556 WO2008081741A1 (ja) | 2006-12-28 | 2007-12-20 | 抵抗変化型素子および抵抗変化型記憶装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8018760B2 (ja) |
JP (1) | JP4202411B2 (ja) |
CN (1) | CN101501851B (ja) |
WO (1) | WO2008081741A1 (ja) |
Families Citing this family (80)
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US8441835B2 (en) | 2010-06-11 | 2013-05-14 | Crossbar, Inc. | Interface control for improved switching in RRAM |
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US8351241B2 (en) | 2010-06-24 | 2013-01-08 | The Regents Of The University Of Michigan | Rectification element and method for resistive switching for non volatile memory device |
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US8467227B1 (en) | 2010-11-04 | 2013-06-18 | Crossbar, Inc. | Hetero resistive switching material layer in RRAM device and method |
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US8884261B2 (en) | 2010-08-23 | 2014-11-11 | Crossbar, Inc. | Device switching using layered device structure |
US8404553B2 (en) | 2010-08-23 | 2013-03-26 | Crossbar, Inc. | Disturb-resistant non-volatile memory device and method |
US8492195B2 (en) | 2010-08-23 | 2013-07-23 | Crossbar, Inc. | Method for forming stackable non-volatile resistive switching memory devices |
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US8889521B1 (en) | 2012-09-14 | 2014-11-18 | Crossbar, Inc. | Method for silver deposition for a non-volatile memory device |
US8558212B2 (en) | 2010-09-29 | 2013-10-15 | Crossbar, Inc. | Conductive path in switching material in a resistive random access memory device and control |
US8391049B2 (en) | 2010-09-29 | 2013-03-05 | Crossbar, Inc. | Resistor structure for a non-volatile memory device and method |
USRE46335E1 (en) | 2010-11-04 | 2017-03-07 | Crossbar, Inc. | Switching device having a non-linear element |
US8502185B2 (en) | 2011-05-31 | 2013-08-06 | Crossbar, Inc. | Switching device having a non-linear element |
US8088688B1 (en) | 2010-11-05 | 2012-01-03 | Crossbar, Inc. | p+ polysilicon material on aluminum for non-volatile memory device and method |
US8930174B2 (en) | 2010-12-28 | 2015-01-06 | Crossbar, Inc. | Modeling technique for resistive random access memory (RRAM) cells |
US9153623B1 (en) | 2010-12-31 | 2015-10-06 | Crossbar, Inc. | Thin film transistor steering element for a non-volatile memory device |
US8815696B1 (en) | 2010-12-31 | 2014-08-26 | Crossbar, Inc. | Disturb-resistant non-volatile memory device using via-fill and etchback technique |
US8791010B1 (en) | 2010-12-31 | 2014-07-29 | Crossbar, Inc. | Silver interconnects for stacked non-volatile memory device and method |
US8450710B2 (en) | 2011-05-27 | 2013-05-28 | Crossbar, Inc. | Low temperature p+ silicon junction material for a non-volatile memory device |
US9620206B2 (en) | 2011-05-31 | 2017-04-11 | Crossbar, Inc. | Memory array architecture with two-terminal memory cells |
US8394670B2 (en) | 2011-05-31 | 2013-03-12 | Crossbar, Inc. | Vertical diodes for non-volatile memory device |
US8619459B1 (en) | 2011-06-23 | 2013-12-31 | Crossbar, Inc. | High operating speed resistive random access memory |
US9627443B2 (en) | 2011-06-30 | 2017-04-18 | Crossbar, Inc. | Three-dimensional oblique two-terminal memory with enhanced electric field |
US9564587B1 (en) | 2011-06-30 | 2017-02-07 | Crossbar, Inc. | Three-dimensional two-terminal memory with enhanced electric field and segmented interconnects |
US8946669B1 (en) | 2012-04-05 | 2015-02-03 | Crossbar, Inc. | Resistive memory device and fabrication methods |
US9166163B2 (en) | 2011-06-30 | 2015-10-20 | Crossbar, Inc. | Sub-oxide interface layer for two-terminal memory |
US8659929B2 (en) | 2011-06-30 | 2014-02-25 | Crossbar, Inc. | Amorphous silicon RRAM with non-linear device and operation |
US9252191B2 (en) | 2011-07-22 | 2016-02-02 | Crossbar, Inc. | Seed layer for a p+ silicon germanium material for a non-volatile memory device and method |
US10056907B1 (en) | 2011-07-29 | 2018-08-21 | Crossbar, Inc. | Field programmable gate array utilizing two-terminal non-volatile memory |
US9729155B2 (en) | 2011-07-29 | 2017-08-08 | Crossbar, Inc. | Field programmable gate array utilizing two-terminal non-volatile memory |
US8674724B2 (en) | 2011-07-29 | 2014-03-18 | Crossbar, Inc. | Field programmable gate array utilizing two-terminal non-volatile memory |
US8716098B1 (en) | 2012-03-09 | 2014-05-06 | Crossbar, Inc. | Selective removal method and structure of silver in resistive switching device for a non-volatile memory device |
JP2013201276A (ja) | 2012-03-23 | 2013-10-03 | Toshiba Corp | 抵抗変化素子及び不揮発性記憶装置 |
US9087576B1 (en) | 2012-03-29 | 2015-07-21 | Crossbar, Inc. | Low temperature fabrication method for a three-dimensional memory device and structure |
US9685608B2 (en) | 2012-04-13 | 2017-06-20 | Crossbar, Inc. | Reduced diffusion in metal electrode for two-terminal memory |
US8658476B1 (en) | 2012-04-20 | 2014-02-25 | Crossbar, Inc. | Low temperature P+ polycrystalline silicon material for non-volatile memory device |
US8796658B1 (en) | 2012-05-07 | 2014-08-05 | Crossbar, Inc. | Filamentary based non-volatile resistive memory device and method |
US8765566B2 (en) | 2012-05-10 | 2014-07-01 | Crossbar, Inc. | Line and space architecture for a non-volatile memory device |
US9583701B1 (en) | 2012-08-14 | 2017-02-28 | Crossbar, Inc. | Methods for fabricating resistive memory device switching material using ion implantation |
US9741765B1 (en) | 2012-08-14 | 2017-08-22 | Crossbar, Inc. | Monolithically integrated resistive memory using integrated-circuit foundry compatible processes |
US8946673B1 (en) | 2012-08-24 | 2015-02-03 | Crossbar, Inc. | Resistive switching device structure with improved data retention for non-volatile memory device and method |
US9312483B2 (en) | 2012-09-24 | 2016-04-12 | Crossbar, Inc. | Electrode structure for a non-volatile memory device and method |
WO2014052316A1 (en) * | 2012-09-25 | 2014-04-03 | Advanced Technology Materials, Inc. | Cobalt precursors for low temperature ald or cvd of cobalt-based thin films |
US9576616B2 (en) | 2012-10-10 | 2017-02-21 | Crossbar, Inc. | Non-volatile memory with overwrite capability and low write amplification |
US11068620B2 (en) | 2012-11-09 | 2021-07-20 | Crossbar, Inc. | Secure circuit integrated with memory layer |
US8982647B2 (en) | 2012-11-14 | 2015-03-17 | Crossbar, Inc. | Resistive random access memory equalization and sensing |
US9412790B1 (en) | 2012-12-04 | 2016-08-09 | Crossbar, Inc. | Scalable RRAM device architecture for a non-volatile memory device and method |
US9406379B2 (en) | 2013-01-03 | 2016-08-02 | Crossbar, Inc. | Resistive random access memory with non-linear current-voltage relationship |
US9112145B1 (en) | 2013-01-31 | 2015-08-18 | Crossbar, Inc. | Rectified switching of two-terminal memory via real time filament formation |
US9324942B1 (en) | 2013-01-31 | 2016-04-26 | Crossbar, Inc. | Resistive memory cell with solid state diode |
US8934280B1 (en) | 2013-02-06 | 2015-01-13 | Crossbar, Inc. | Capacitive discharge programming for two-terminal memory cells |
US10290801B2 (en) | 2014-02-07 | 2019-05-14 | Crossbar, Inc. | Scalable silicon based resistive memory device |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004185756A (ja) * | 2002-12-05 | 2004-07-02 | Sharp Corp | 不揮発性メモリ装置 |
WO2005101420A1 (en) * | 2004-04-16 | 2005-10-27 | Matsushita Electric Industrial Co. Ltd. | Thin film memory device having a variable resistance |
WO2006028117A1 (ja) * | 2004-09-09 | 2006-03-16 | Matsushita Electric Industrial Co., Ltd. | 抵抗変化素子とその製造方法 |
JP2006080259A (ja) * | 2004-09-09 | 2006-03-23 | Matsushita Electric Ind Co Ltd | 抵抗変化素子およびそれを用いた不揮発性メモリ、ならびにこれらの製造方法 |
Family Cites Families (5)
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US6204139B1 (en) | 1998-08-25 | 2001-03-20 | University Of Houston | Method for switching the properties of perovskite materials used in thin film resistors |
CN1169745C (zh) * | 2001-11-27 | 2004-10-06 | 南京大学 | 具有巨磁电阻效应的锌铁氧体材料及其制备方法 |
JP2004241396A (ja) | 2002-02-07 | 2004-08-26 | Sharp Corp | 抵抗変化素子の製造方法および不揮発性抵抗変化メモリデバイスの製造方法、並びに不揮発性抵抗変化メモリデバイス |
US6887523B2 (en) | 2002-12-20 | 2005-05-03 | Sharp Laboratories Of America, Inc. | Method for metal oxide thin film deposition via MOCVD |
KR100773537B1 (ko) | 2003-06-03 | 2007-11-07 | 삼성전자주식회사 | 한 개의 스위칭 소자와 한 개의 저항체를 포함하는비휘발성 메모리 장치 및 그 제조 방법 |
-
2007
- 2007-12-20 US US12/518,400 patent/US8018760B2/en not_active Expired - Fee Related
- 2007-12-20 JP JP2008513046A patent/JP4202411B2/ja not_active Expired - Fee Related
- 2007-12-20 CN CN200780029617.4A patent/CN101501851B/zh not_active Expired - Fee Related
- 2007-12-20 WO PCT/JP2007/074556 patent/WO2008081741A1/ja active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004185756A (ja) * | 2002-12-05 | 2004-07-02 | Sharp Corp | 不揮発性メモリ装置 |
WO2005101420A1 (en) * | 2004-04-16 | 2005-10-27 | Matsushita Electric Industrial Co. Ltd. | Thin film memory device having a variable resistance |
WO2006028117A1 (ja) * | 2004-09-09 | 2006-03-16 | Matsushita Electric Industrial Co., Ltd. | 抵抗変化素子とその製造方法 |
JP2006080259A (ja) * | 2004-09-09 | 2006-03-23 | Matsushita Electric Ind Co Ltd | 抵抗変化素子およびそれを用いた不揮発性メモリ、ならびにこれらの製造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN101501851A (zh) | 2009-08-05 |
JP4202411B2 (ja) | 2008-12-24 |
US20100008127A1 (en) | 2010-01-14 |
CN101501851B (zh) | 2010-11-17 |
JPWO2008081741A1 (ja) | 2010-04-30 |
US8018760B2 (en) | 2011-09-13 |
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