WO2008081742A1 - 抵抗変化型素子、抵抗変化型記憶装置、および抵抗変化型装置 - Google Patents

抵抗変化型素子、抵抗変化型記憶装置、および抵抗変化型装置 Download PDF

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Publication number
WO2008081742A1
WO2008081742A1 PCT/JP2007/074559 JP2007074559W WO2008081742A1 WO 2008081742 A1 WO2008081742 A1 WO 2008081742A1 JP 2007074559 W JP2007074559 W JP 2007074559W WO 2008081742 A1 WO2008081742 A1 WO 2008081742A1
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WIPO (PCT)
Prior art keywords
resistance variable
electrode
storage device
resistance
voltage
Prior art date
Application number
PCT/JP2007/074559
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English (en)
French (fr)
Inventor
Shunsaku Muraoka
Koichi Osano
Satoru Fujii
Original Assignee
Panasonic Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corporation filed Critical Panasonic Corporation
Priority to JP2008552095A priority Critical patent/JPWO2008081742A1/ja
Priority to US12/519,476 priority patent/US8018761B2/en
Publication of WO2008081742A1 publication Critical patent/WO2008081742A1/ja

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8836—Complex metal oxides, e.g. perovskites, spinels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0073—Write using bi-directional cell biasing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0083—Write to perform initialising, forming process, electro forming or conditioning
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/79—Array wherein the access device being a transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Networks Using Active Elements (AREA)

Abstract

　第１電極（２）と、第２電極（４）と、第１電極（２）と第２電極（４）との間に配設され第１電極（２）と第２電極（４）とに電気的に接続された抵抗変化層（３）とを備え、抵抗変化層（３）が（ＮｉｘＦｅ１－ｘ）Ｆｅ２Ｏ４の化学式で表されるスピネル構造を有する材料を含み、Ｘが０．３５以上０．９以下であり、第１電極（２）と第２電極（４）との間に第１の電圧を有する第１電圧パルスを印加することで第１電極（２）と第２電極（４）との間の電気抵抗が低下し、第１電極（２）と第２電極（４）との間に第１の電圧と極性が異なる第２の電圧を有する第２電圧パルスを印加することで第１電極（２）と第２電極（４）との間の電気抵抗が上昇する性質を有する抵抗変化型素子（１０）、抵抗変化型記憶装置、および抵抗変化型装置である。
PCT/JP2007/074559 2006-12-28 2007-12-20 抵抗変化型素子、抵抗変化型記憶装置、および抵抗変化型装置 WO2008081742A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2008552095A JPWO2008081742A1 (ja) 2006-12-28 2007-12-20 抵抗変化型素子、抵抗変化型記憶装置、および抵抗変化型装置
US12/519,476 US8018761B2 (en) 2006-12-28 2007-12-20 Resistance variable element, resistance variable memory apparatus, and resistance variable apparatus

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006-354208 2006-12-28
JP2006354208 2006-12-28

Publications (1)

Publication Number Publication Date
WO2008081742A1 true WO2008081742A1 (ja) 2008-07-10

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PCT/JP2007/074559 WO2008081742A1 (ja) 2006-12-28 2007-12-20 抵抗変化型素子、抵抗変化型記憶装置、および抵抗変化型装置

Country Status (4)

Country Link
US (1) US8018761B2 (ja)
JP (1) JPWO2008081742A1 (ja)
CN (1) CN101569011A (ja)
WO (1) WO2008081742A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102306705A (zh) * 2011-09-16 2012-01-04 北京大学 一种大容量多值阻变存储器
US9006697B2 (en) 2012-03-23 2015-04-14 Kabushiki Kaisha Toshiba Resistance change element and nonvolatile memory device

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
PL1905444T3 (pl) 2005-07-14 2015-03-31 Shanghai Hongyitang Biopharmaceutical Tech Co Ltd Sposób wytwarzania kompozycji leczniczej zawierającej drugorzędowe glikozydy żeń-szenia
KR20090095313A (ko) * 2008-03-05 2009-09-09 삼성전자주식회사 저항성 메모리 소자의 프로그래밍 방법
JP5549105B2 (ja) * 2009-04-15 2014-07-16 ソニー株式会社 抵抗変化型メモリデバイスおよびその動作方法
CN103262240B (zh) * 2011-02-23 2016-08-03 松下知识产权经营株式会社 非易失性存储元件及其制造方法
CN102185107B (zh) * 2011-05-10 2013-07-31 中山大学 一种电阻式随机存储元件及其制备方法
WO2012153488A1 (ja) * 2011-05-11 2012-11-15 パナソニック株式会社 クロスポイント型抵抗変化不揮発性記憶装置およびその読み出し方法
US9236102B2 (en) 2012-10-12 2016-01-12 Micron Technology, Inc. Apparatuses, circuits, and methods for biasing signal lines
US9042190B2 (en) 2013-02-25 2015-05-26 Micron Technology, Inc. Apparatuses, sense circuits, and methods for compensating for a wordline voltage increase
US9672875B2 (en) 2014-01-27 2017-06-06 Micron Technology, Inc. Methods and apparatuses for providing a program voltage responsive to a voltage determination
US9947400B2 (en) * 2016-04-22 2018-04-17 Nantero, Inc. Methods for enhanced state retention within a resistive change cell
US10446228B2 (en) 2017-12-23 2019-10-15 Nantero, Inc. Devices and methods for programming resistive change elements
US10483464B1 (en) * 2018-05-31 2019-11-19 Uchicago Argonne, Llc Resistive switching memory device
CN110675906B (zh) * 2018-07-03 2021-10-08 华邦电子股份有限公司 电阻式随机存取存储单元的检测方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005101420A1 (en) * 2004-04-16 2005-10-27 Matsushita Electric Industrial Co. Ltd. Thin film memory device having a variable resistance
WO2006028117A1 (ja) * 2004-09-09 2006-03-16 Matsushita Electric Industrial Co., Ltd. 抵抗変化素子とその製造方法
JP2006080259A (ja) * 2004-09-09 2006-03-23 Matsushita Electric Ind Co Ltd 抵抗変化素子およびそれを用いた不揮発性メモリ、ならびにこれらの製造方法

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US6204139B1 (en) * 1998-08-25 2001-03-20 University Of Houston Method for switching the properties of perovskite materials used in thin film resistors
JP4613478B2 (ja) 2003-05-15 2011-01-19 ソニー株式会社 半導体記憶素子及びこれを用いた半導体記憶装置
KR100773537B1 (ko) 2003-06-03 2007-11-07 삼성전자주식회사 한 개의 스위칭 소자와 한 개의 저항체를 포함하는비휘발성 메모리 장치 및 그 제조 방법
JP4701427B2 (ja) 2004-04-28 2011-06-15 パナソニック株式会社 スイッチング素子およびそれを用いたアレイ型機能素子
JP2006319166A (ja) 2005-05-13 2006-11-24 Matsushita Electric Ind Co Ltd 記憶素子の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005101420A1 (en) * 2004-04-16 2005-10-27 Matsushita Electric Industrial Co. Ltd. Thin film memory device having a variable resistance
WO2006028117A1 (ja) * 2004-09-09 2006-03-16 Matsushita Electric Industrial Co., Ltd. 抵抗変化素子とその製造方法
JP2006080259A (ja) * 2004-09-09 2006-03-23 Matsushita Electric Ind Co Ltd 抵抗変化素子およびそれを用いた不揮発性メモリ、ならびにこれらの製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102306705A (zh) * 2011-09-16 2012-01-04 北京大学 一种大容量多值阻变存储器
US8633465B2 (en) 2011-09-16 2014-01-21 Peking University Multilevel resistive memory having large storage capacity
US9006697B2 (en) 2012-03-23 2015-04-14 Kabushiki Kaisha Toshiba Resistance change element and nonvolatile memory device

Also Published As

Publication number Publication date
US8018761B2 (en) 2011-09-13
JPWO2008081742A1 (ja) 2010-04-30
CN101569011A (zh) 2009-10-28
US20100027320A1 (en) 2010-02-04

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