WO2009005134A1 - ダイヤモンド半導体デバイス - Google Patents
ダイヤモンド半導体デバイス Download PDFInfo
- Publication number
- WO2009005134A1 WO2009005134A1 PCT/JP2008/062111 JP2008062111W WO2009005134A1 WO 2009005134 A1 WO2009005134 A1 WO 2009005134A1 JP 2008062111 W JP2008062111 W JP 2008062111W WO 2009005134 A1 WO2009005134 A1 WO 2009005134A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- semiconductor device
- substrate
- electrodes
- diamond
- diamond semiconductor
- Prior art date
Links
- 229910003460 diamond Inorganic materials 0.000 title abstract 5
- 239000010432 diamond Substances 0.000 title abstract 5
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 abstract 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 2
- 229910052739 hydrogen Inorganic materials 0.000 abstract 2
- 239000001257 hydrogen Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1602—Diamond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0405—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon
- H01L21/0425—Making electrodes
- H01L21/0435—Schottky electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66015—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene
- H01L29/66022—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6603—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
本ダイヤモンド半導体デバイスは、ダイヤモンド基板に、対をなす電極が固定されてなるダイヤモンド半導体デバイスであって、前記ダイヤモンド基板の表面の内、電極との界面の内少なくとも一方が水素終端を有し、少なくとも対をなす両電極間の基板表面は、基板内部よりも大きい電気抵抗値となるようにしてあることを特徴とする。これにより、水素終端の有する機能を最大限に発揮しながら、デバイス動作の安定性、特に高温等の厳しい環境下でのデバイス動作の安定性を図ることができるダイヤモンド半導体デバイスが実現される。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP08790855.4A EP2169709B1 (en) | 2007-07-04 | 2008-07-03 | Diamond semiconductor device |
JP2009521672A JP5360766B6 (ja) | 2007-07-04 | 2008-07-03 | ダイヤモンド半導体デバイス |
US12/667,112 US8338834B2 (en) | 2007-07-04 | 2008-07-03 | Diamond semiconductor device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007175702 | 2007-07-04 | ||
JP2007-175702 | 2007-07-04 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009005134A1 true WO2009005134A1 (ja) | 2009-01-08 |
Family
ID=40226175
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/062111 WO2009005134A1 (ja) | 2007-07-04 | 2008-07-03 | ダイヤモンド半導体デバイス |
Country Status (3)
Country | Link |
---|---|
US (1) | US8338834B2 (ja) |
EP (1) | EP2169709B1 (ja) |
WO (1) | WO2009005134A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016522988A (ja) * | 2013-04-22 | 2016-08-04 | セントレ・ナショナル・デ・ラ・レシェルシェ・サイエンティフィーク | ダイヤモンド基板にショットキーダイオードを製造する方法 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5504565B2 (ja) * | 2008-02-07 | 2014-05-28 | 独立行政法人物質・材料研究機構 | ダイヤモンド紫外線センサー素子とその製造方法、並びに紫外線センサー装置 |
US20130026492A1 (en) * | 2011-07-30 | 2013-01-31 | Akhan Technologies Inc. | Diamond Semiconductor System and Method |
FR2984595B1 (fr) * | 2011-12-20 | 2014-02-14 | Centre Nat Rech Scient | Procede de fabrication d'un empilement mos sur un substrat en diamant |
CN103280395B (zh) * | 2013-05-17 | 2015-07-08 | 中国电子科技集团公司第十三研究所 | 一种热退火法在金刚石表面制作氢端基导电沟道的方法 |
KR102247416B1 (ko) * | 2014-09-24 | 2021-05-03 | 인텔 코포레이션 | 표면 종단을 갖는 나노와이어를 사용하여 형성되는 스케일링된 tfet 트랜지스터 |
CN113130695A (zh) * | 2019-12-31 | 2021-07-16 | 西安电子科技大学 | 基于氢氧终端全垂直结构的金刚石核探测器及制备方法 |
CN113130697B (zh) * | 2019-12-31 | 2024-01-23 | 西安电子科技大学 | 一种赝竖式氢氧终端金刚石核探测器及其制备方法 |
WO2023288108A1 (en) * | 2021-07-16 | 2023-01-19 | The University Of Chicago | Biocompatible surface for quantum sensing and methods thereof |
CN114068681B (zh) * | 2021-11-17 | 2024-04-05 | 哈尔滨工业大学 | 基于金刚石肖特基二极管的高温工作的逻辑器件及其制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08139109A (ja) * | 1994-09-16 | 1996-05-31 | Tokyo Gas Co Ltd | 素子分離された水素終端ダイヤモンド半導体素子および該半導体素子の製造方法 |
JPH09312300A (ja) * | 1995-11-17 | 1997-12-02 | Tokyo Gas Co Ltd | 水素終端ダイヤモンドデプレッション型mesfetおよび該デプレッション型mesfetの製造方法 |
EP0827208A2 (en) | 1996-09-02 | 1998-03-04 | Tokyo Gas Co., Ltd. | Hydrogen-terminated diamond misfet and its manufacturing method |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3394096B2 (ja) | 1994-09-16 | 2003-04-07 | 東京瓦斯株式会社 | 水素終端ホモエピタキシャルダイヤモンドを用いたfetおよびその製造方法 |
SE515494C2 (sv) * | 1999-12-28 | 2001-08-13 | Abb Ab | Högspänningshalvledaranordning och förfarande för tillverkning av ett passiveringsskikt på en högspänningshalvledaranordning |
JP3910512B2 (ja) | 2002-09-20 | 2007-04-25 | 独立行政法人科学技術振興機構 | pチャネル電界効果トランジスタの製造方法 |
-
2008
- 2008-07-03 WO PCT/JP2008/062111 patent/WO2009005134A1/ja active Application Filing
- 2008-07-03 EP EP08790855.4A patent/EP2169709B1/en not_active Not-in-force
- 2008-07-03 US US12/667,112 patent/US8338834B2/en not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08139109A (ja) * | 1994-09-16 | 1996-05-31 | Tokyo Gas Co Ltd | 素子分離された水素終端ダイヤモンド半導体素子および該半導体素子の製造方法 |
JPH09312300A (ja) * | 1995-11-17 | 1997-12-02 | Tokyo Gas Co Ltd | 水素終端ダイヤモンドデプレッション型mesfetおよび該デプレッション型mesfetの製造方法 |
EP0827208A2 (en) | 1996-09-02 | 1998-03-04 | Tokyo Gas Co., Ltd. | Hydrogen-terminated diamond misfet and its manufacturing method |
Non-Patent Citations (1)
Title |
---|
See also references of EP2169709A4 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016522988A (ja) * | 2013-04-22 | 2016-08-04 | セントレ・ナショナル・デ・ラ・レシェルシェ・サイエンティフィーク | ダイヤモンド基板にショットキーダイオードを製造する方法 |
Also Published As
Publication number | Publication date |
---|---|
EP2169709A4 (en) | 2011-06-22 |
JP5360766B2 (ja) | 2013-12-04 |
EP2169709A1 (en) | 2010-03-31 |
EP2169709B1 (en) | 2017-12-20 |
US8338834B2 (en) | 2012-12-25 |
JPWO2009005134A1 (ja) | 2010-08-26 |
US20100289031A1 (en) | 2010-11-18 |
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