ATE525706T1 - Datenspeichereinrichtung - Google Patents

Datenspeichereinrichtung

Info

Publication number
ATE525706T1
ATE525706T1 AT06747668T AT06747668T ATE525706T1 AT E525706 T1 ATE525706 T1 AT E525706T1 AT 06747668 T AT06747668 T AT 06747668T AT 06747668 T AT06747668 T AT 06747668T AT E525706 T1 ATE525706 T1 AT E525706T1
Authority
AT
Austria
Prior art keywords
memory
unit
read
write
contacts
Prior art date
Application number
AT06747668T
Other languages
English (en)
Inventor
Per Broems
Christer Karlsson
Geirr Leistad
Hans Gude Gudesen
Per Hamberg
Staffan Bjoerklid
Johan Carlsson
Goeran Gustafsson
Original Assignee
Thin Film Electronics Asa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thin Film Electronics Asa filed Critical Thin Film Electronics Asa
Application granted granted Critical
Publication of ATE525706T1 publication Critical patent/ATE525706T1/de

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K7/00—Methods or arrangements for sensing record carriers, e.g. for reading patterns
    • G06K7/0013—Methods or arrangements for sensing record carriers, e.g. for reading patterns by galvanic contacts, e.g. card connectors for ISO-7816 compliant smart cards or memory cards, e.g. SD card readers
    • G06K7/0021—Methods or arrangements for sensing record carriers, e.g. for reading patterns by galvanic contacts, e.g. card connectors for ISO-7816 compliant smart cards or memory cards, e.g. SD card readers for reading/sensing record carriers having surface contacts
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/02—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using ferroelectric record carriers; Record carriers therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5664—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using organic memory material storage elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G11C13/0016—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material comprising polymers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G11B9/1418—Disposition or mounting of heads or record carriers
    • G11B9/1427—Disposition or mounting of heads or record carriers with provision for moving the heads or record carriers relatively to each other or for access to indexed parts without effectively imparting a relative movement
    • G11B9/1436—Disposition or mounting of heads or record carriers with provision for moving the heads or record carriers relatively to each other or for access to indexed parts without effectively imparting a relative movement with provision for moving the heads or record carriers relatively to each other
    • G11B9/1454—Positioning the head or record carrier into or out of operative position or across information tracks; Alignment of the head relative to the surface of the record carrier

Landscapes

  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Computer Hardware Design (AREA)
  • Theoretical Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Artificial Intelligence (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Semiconductor Memories (AREA)
  • Memory System Of A Hierarchy Structure (AREA)
  • Storage Device Security (AREA)
  • Debugging And Monitoring (AREA)
  • Read Only Memory (AREA)
AT06747668T 2005-06-14 2006-06-08 Datenspeichereinrichtung ATE525706T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NO20052904A NO20052904L (no) 2005-06-14 2005-06-14 Et ikke-flyktig elektrisk minnesystem
PCT/NO2006/000216 WO2006135247A1 (en) 2005-06-14 2006-06-08 A data storage device

Publications (1)

Publication Number Publication Date
ATE525706T1 true ATE525706T1 (de) 2011-10-15

Family

ID=35295086

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06747668T ATE525706T1 (de) 2005-06-14 2006-06-08 Datenspeichereinrichtung

Country Status (9)

Country Link
US (2) US7764529B2 (de)
EP (2) EP1891583B1 (de)
JP (2) JP4782196B2 (de)
CN (1) CN101198969A (de)
AT (1) ATE525706T1 (de)
DE (1) DE602006015808D1 (de)
NO (1) NO20052904L (de)
RU (2) RU2008100079A (de)
WO (2) WO2006135247A1 (de)

Families Citing this family (21)

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NO20052904L (no) * 2005-06-14 2006-12-15 Thin Film Electronics Asa Et ikke-flyktig elektrisk minnesystem
US7961506B2 (en) 2008-02-05 2011-06-14 Micron Technology, Inc. Multiple memory cells with rectifying device
US9412705B2 (en) 2011-06-27 2016-08-09 Thin Film Electronics Asa Short circuit reduction in a ferroelectric memory cell comprising a stack of layers arranged on a flexible substrate
EP3118853B1 (de) 2011-06-27 2018-06-06 Thin Film Electronics ASA Kurzschlussreduktion bei einer elektronischen komponente mit einem auf einem flexiblen substrat angeordneten schichtstapel
US9219225B2 (en) 2013-10-31 2015-12-22 Micron Technology, Inc. Multi-bit ferroelectric memory device and methods of forming the same
JP2016189042A (ja) * 2015-03-30 2016-11-04 株式会社クボタ カード発行機およびカード購入システム
US9886571B2 (en) 2016-02-16 2018-02-06 Xerox Corporation Security enhancement of customer replaceable unit monitor (CRUM)
US10978169B2 (en) 2017-03-17 2021-04-13 Xerox Corporation Pad detection through pattern analysis
US9934415B1 (en) 2017-04-20 2018-04-03 Xerox Corporation Handheld reader having transparent circuit board for alignment of multiple electrical contacts
US10396124B2 (en) 2017-07-05 2019-08-27 Xerox Corporation Memory cells and devices
WO2019045087A1 (en) * 2017-08-28 2019-03-07 Mapper Lithography Ip B.V. MEMORY DEVICE WITH PREDETERMINED STARTING VALUE
US10838831B2 (en) * 2018-05-14 2020-11-17 Micron Technology, Inc. Die-scope proximity disturb and defect remapping scheme for non-volatile memory
US11055167B2 (en) * 2018-05-14 2021-07-06 Micron Technology, Inc. Channel-scope proximity disturb and defect remapping scheme for non-volatile memory
US10304836B1 (en) 2018-07-18 2019-05-28 Xerox Corporation Protective layers for high-yield printed electronic devices
US10593684B2 (en) 2018-07-18 2020-03-17 Xerox Corporation Printed electronic devices exhibiting improved yield
US10249625B1 (en) 2018-07-18 2019-04-02 Xerox Corporation Coated printed electronic devices exhibiting improved yield
DE102020108366A1 (de) 2020-03-26 2021-09-30 Bayerische Motoren Werke Aktiengesellschaft Informationsspeicher und Verfahren zum Programmieren und Auslesen von Informationen
US11823739B2 (en) * 2020-04-06 2023-11-21 Crossbar, Inc. Physically unclonable function (PUF) generation involving high side programming of bits
US12087397B1 (en) 2020-04-06 2024-09-10 Crossbar, Inc. Dynamic host allocation of physical unclonable feature operation for resistive switching memory
CN115240735A (zh) 2020-04-06 2022-10-25 昕原半导体(上海)有限公司 利用芯片上电阻存储器阵列的不可克隆特性的独特芯片标识符
US11727986B2 (en) * 2020-04-06 2023-08-15 Crossbar, Inc. Physically unclonable function (PUF) generation involving programming of marginal bits

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US3835301A (en) * 1973-02-21 1974-09-10 Helert P Card coding and read-out system
FR2633420B1 (fr) 1988-06-28 1992-02-21 Schlumberger Ind Sa Support d'informations et systeme de gestion de tels supports
JP2788290B2 (ja) 1988-07-08 1998-08-20 オリンパス光学工業株式会社 強誘電体メモリ
JP2788265B2 (ja) * 1988-07-08 1998-08-20 オリンパス光学工業株式会社 強誘電体メモリ及びその駆動方法，製造方法
US5323377A (en) * 1992-11-27 1994-06-21 Chen Zhi Q Electrical data recording and retrieval based on impedance variation
US6025618A (en) * 1996-11-12 2000-02-15 Chen; Zhi Quan Two-parts ferroelectric RAM
NO972803D0 (no) * 1997-06-17 1997-06-17 Opticom As Elektrisk adresserbar logisk innretning, fremgangsmåte til elektrisk adressering av samme og anvendelse av innretning og fremgangsmåte
JP3978818B2 (ja) * 1997-08-08 2007-09-19 ソニー株式会社 微小ヘッド素子の製造方法
NO973993L (no) * 1997-09-01 1999-03-02 Opticom As Leseminne og leseminneinnretninger
NO308149B1 (no) * 1998-06-02 2000-07-31 Thin Film Electronics Asa Skalerbar, integrert databehandlingsinnretning
WO1999045582A1 (en) * 1998-01-28 1999-09-10 Thin Film Electronics Asa A method for generation of electrical conducting or semiconducting structures in three dimensions and methods for erasure of the same structures
RU2201639C1 (ru) 1998-12-04 2003-03-27 Тин Филм Электроникс Аса Масштабируемое устройство обработки данных
EP1548833A4 (de) * 2002-08-19 2007-03-21 Seiko Epson Corp Ferroelektrischer speicher und verfahren zu seiner herstellung
FI20031089A7 (fi) 2003-07-17 2005-01-18 Avantone Oy Kappaleiden tunnistusmenetelmä sekä järjestelmä merkin sisällön selvittämiseksi
JP4102345B2 (ja) 2003-08-25 2008-06-18 三星電子株式会社 強誘電膜を含む記録媒体、それを用いた不揮発性メモリ素子、および、その不揮発性メモリ素子のデータ記録／再生方法
US7471614B2 (en) * 2003-08-29 2008-12-30 International Business Machines Corporation High density data storage medium
US20050156271A1 (en) * 2004-01-16 2005-07-21 Si-Ty Lam Data storage device
KR100590564B1 (ko) 2004-10-29 2006-06-19 삼성전자주식회사 이방성 전도층을 구비하는 강유전체 기록 매체, 이를구비하는 기록 장치 및 그 기록 방법
KR100612867B1 (ko) 2004-11-02 2006-08-14 삼성전자주식회사 탐침 어레이를 가지는 저항성 메모리 소자 및 그 제조 방법
NO20052904L (no) * 2005-06-14 2006-12-15 Thin Film Electronics Asa Et ikke-flyktig elektrisk minnesystem

Also Published As

Publication number Publication date
NO20052904D0 (no) 2005-06-14
EP1894146B1 (de) 2010-07-28
JP2008544364A (ja) 2008-12-04
JP2008544363A (ja) 2008-12-04
WO2006135245A1 (en) 2006-12-21
EP1891583B1 (de) 2011-09-21
CN101198969A (zh) 2008-06-11
DE602006015808D1 (de) 2010-09-09
EP1894146A4 (de) 2009-11-25
US8184467B2 (en) 2012-05-22
US7764529B2 (en) 2010-07-27
US20080198640A1 (en) 2008-08-21
RU2008100080A (ru) 2009-07-20
JP4782196B2 (ja) 2011-09-28
US20080198644A1 (en) 2008-08-21
NO20052904L (no) 2006-12-15
WO2006135247A1 (en) 2006-12-21
RU2008100079A (ru) 2009-07-20
EP1894146A1 (de) 2008-03-05
EP1891583A1 (de) 2008-02-27

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Legal Events

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