ATE525706T1 - Datenspeichereinrichtung - Google Patents
DatenspeichereinrichtungInfo
- Publication number
- ATE525706T1 ATE525706T1 AT06747668T AT06747668T ATE525706T1 AT E525706 T1 ATE525706 T1 AT E525706T1 AT 06747668 T AT06747668 T AT 06747668T AT 06747668 T AT06747668 T AT 06747668T AT E525706 T1 ATE525706 T1 AT E525706T1
- Authority
- AT
- Austria
- Prior art keywords
- memory
- unit
- read
- write
- contacts
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
- G06K7/00—Methods or arrangements for sensing record carriers, e.g. for reading patterns
- G06K7/0013—Methods or arrangements for sensing record carriers, e.g. for reading patterns by galvanic contacts, e.g. card connectors for ISO-7816 compliant smart cards or memory cards, e.g. SD card readers
- G06K7/0021—Methods or arrangements for sensing record carriers, e.g. for reading patterns by galvanic contacts, e.g. card connectors for ISO-7816 compliant smart cards or memory cards, e.g. SD card readers for reading/sensing record carriers having surface contacts
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
- G11B9/02—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using ferroelectric record carriers; Record carriers therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5664—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using organic memory material storage elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
- G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
- G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
- G11C13/0016—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material comprising polymers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
- G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
- G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
- G11B9/1418—Disposition or mounting of heads or record carriers
- G11B9/1427—Disposition or mounting of heads or record carriers with provision for moving the heads or record carriers relatively to each other or for access to indexed parts without effectively imparting a relative movement
- G11B9/1436—Disposition or mounting of heads or record carriers with provision for moving the heads or record carriers relatively to each other or for access to indexed parts without effectively imparting a relative movement with provision for moving the heads or record carriers relatively to each other
- G11B9/1454—Positioning the head or record carrier into or out of operative position or across information tracks; Alignment of the head relative to the surface of the record carrier
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Theoretical Computer Science (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Crystallography & Structural Chemistry (AREA)
- Artificial Intelligence (AREA)
- General Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Semiconductor Memories (AREA)
- Memory System Of A Hierarchy Structure (AREA)
- Debugging And Monitoring (AREA)
- Storage Device Security (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NO20052904A NO20052904L (no) | 2005-06-14 | 2005-06-14 | Et ikke-flyktig elektrisk minnesystem |
PCT/NO2006/000216 WO2006135247A1 (en) | 2005-06-14 | 2006-06-08 | A data storage device |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE525706T1 true ATE525706T1 (de) | 2011-10-15 |
Family
ID=35295086
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT06747668T ATE525706T1 (de) | 2005-06-14 | 2006-06-08 | Datenspeichereinrichtung |
Country Status (9)
Country | Link |
---|---|
US (2) | US8184467B2 (de) |
EP (2) | EP1891583B1 (de) |
JP (2) | JP4782196B2 (de) |
CN (1) | CN101198969A (de) |
AT (1) | ATE525706T1 (de) |
DE (1) | DE602006015808D1 (de) |
NO (1) | NO20052904L (de) |
RU (2) | RU2008100080A (de) |
WO (2) | WO2006135245A1 (de) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NO20052904L (no) * | 2005-06-14 | 2006-12-15 | Thin Film Electronics Asa | Et ikke-flyktig elektrisk minnesystem |
US7961506B2 (en) * | 2008-02-05 | 2011-06-14 | Micron Technology, Inc. | Multiple memory cells with rectifying device |
EP3118853B1 (de) | 2011-06-27 | 2018-06-06 | Thin Film Electronics ASA | Kurzschlussreduktion bei einer elektronischen komponente mit einem auf einem flexiblen substrat angeordneten schichtstapel |
JP5869112B2 (ja) | 2011-06-27 | 2016-02-24 | シン フイルム エレクトロニクス エイエスエイ | フレキシブルな基板上に設けられた積層体を含む強誘電体メモリセル中の短絡回路の低減 |
US9219225B2 (en) | 2013-10-31 | 2015-12-22 | Micron Technology, Inc. | Multi-bit ferroelectric memory device and methods of forming the same |
JP2016189042A (ja) * | 2015-03-30 | 2016-11-04 | 株式会社クボタ | カード発行機およびカード購入システム |
US9886571B2 (en) | 2016-02-16 | 2018-02-06 | Xerox Corporation | Security enhancement of customer replaceable unit monitor (CRUM) |
US10978169B2 (en) | 2017-03-17 | 2021-04-13 | Xerox Corporation | Pad detection through pattern analysis |
US9934415B1 (en) | 2017-04-20 | 2018-04-03 | Xerox Corporation | Handheld reader having transparent circuit board for alignment of multiple electrical contacts |
US10396124B2 (en) | 2017-07-05 | 2019-08-27 | Xerox Corporation | Memory cells and devices |
US11055167B2 (en) * | 2018-05-14 | 2021-07-06 | Micron Technology, Inc. | Channel-scope proximity disturb and defect remapping scheme for non-volatile memory |
US10838831B2 (en) * | 2018-05-14 | 2020-11-17 | Micron Technology, Inc. | Die-scope proximity disturb and defect remapping scheme for non-volatile memory |
US10304836B1 (en) | 2018-07-18 | 2019-05-28 | Xerox Corporation | Protective layers for high-yield printed electronic devices |
US10593684B2 (en) | 2018-07-18 | 2020-03-17 | Xerox Corporation | Printed electronic devices exhibiting improved yield |
US10249625B1 (en) | 2018-07-18 | 2019-04-02 | Xerox Corporation | Coated printed electronic devices exhibiting improved yield |
DE102020108366A1 (de) | 2020-03-26 | 2021-09-30 | Bayerische Motoren Werke Aktiengesellschaft | Informationsspeicher und Verfahren zum Programmieren und Auslesen von Informationen |
US11727986B2 (en) * | 2020-04-06 | 2023-08-15 | Crossbar, Inc. | Physically unclonable function (PUF) generation involving programming of marginal bits |
US11823739B2 (en) * | 2020-04-06 | 2023-11-21 | Crossbar, Inc. | Physically unclonable function (PUF) generation involving high side programming of bits |
US11450384B2 (en) | 2020-04-06 | 2022-09-20 | Crossbar, Inc. | Distinct chip identifier sequence utilizing unclonable characteristics of resistive memory on a chip |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3835301A (en) | 1973-02-21 | 1974-09-10 | Helert P | Card coding and read-out system |
FR2633420B1 (fr) | 1988-06-28 | 1992-02-21 | Schlumberger Ind Sa | Support d'informations et systeme de gestion de tels supports |
JP2788290B2 (ja) | 1988-07-08 | 1998-08-20 | オリンパス光学工業株式会社 | 強誘電体メモリ |
JP2788265B2 (ja) | 1988-07-08 | 1998-08-20 | オリンパス光学工業株式会社 | 強誘電体メモリ及びその駆動方法,製造方法 |
US5323377A (en) | 1992-11-27 | 1994-06-21 | Chen Zhi Q | Electrical data recording and retrieval based on impedance variation |
US6025618A (en) | 1996-11-12 | 2000-02-15 | Chen; Zhi Quan | Two-parts ferroelectric RAM |
NO972803D0 (no) * | 1997-06-17 | 1997-06-17 | Opticom As | Elektrisk adresserbar logisk innretning, fremgangsmåte til elektrisk adressering av samme og anvendelse av innretning og fremgangsmåte |
JP3978818B2 (ja) * | 1997-08-08 | 2007-09-19 | ソニー株式会社 | 微小ヘッド素子の製造方法 |
NO973993L (no) * | 1997-09-01 | 1999-03-02 | Opticom As | Leseminne og leseminneinnretninger |
JP2002515641A (ja) * | 1998-01-28 | 2002-05-28 | シン フイルム エレクトロニクス エイエスエイ | 三次元の導電性または半導電性構造体を生成する方法およびこの構造体を消去する方法 |
NO308149B1 (no) * | 1998-06-02 | 2000-07-31 | Thin Film Electronics Asa | Skalerbar, integrert databehandlingsinnretning |
EP1135807A1 (de) | 1998-12-04 | 2001-09-26 | Thin Film Electronics ASA | Skalierbare datenverarbeitungsvorrichtung |
WO2004017410A1 (ja) * | 2002-08-19 | 2004-02-26 | Seiko Epson Corporation | 強誘電体メモリおよびその製造方法 |
FI20031089A (fi) * | 2003-07-17 | 2005-01-18 | Avantone Oy | Kappaleiden tunnistusmenetelmä sekä järjestelmä merkin sisällön selvittämiseksi |
JP4102345B2 (ja) | 2003-08-25 | 2008-06-18 | 三星電子株式会社 | 強誘電膜を含む記録媒体、それを用いた不揮発性メモリ素子、および、その不揮発性メモリ素子のデータ記録/再生方法 |
US7471614B2 (en) | 2003-08-29 | 2008-12-30 | International Business Machines Corporation | High density data storage medium |
US20050156271A1 (en) * | 2004-01-16 | 2005-07-21 | Si-Ty Lam | Data storage device |
KR100590564B1 (ko) * | 2004-10-29 | 2006-06-19 | 삼성전자주식회사 | 이방성 전도층을 구비하는 강유전체 기록 매체, 이를구비하는 기록 장치 및 그 기록 방법 |
KR100612867B1 (ko) | 2004-11-02 | 2006-08-14 | 삼성전자주식회사 | 탐침 어레이를 가지는 저항성 메모리 소자 및 그 제조 방법 |
NO20052904L (no) * | 2005-06-14 | 2006-12-15 | Thin Film Electronics Asa | Et ikke-flyktig elektrisk minnesystem |
-
2005
- 2005-06-14 NO NO20052904A patent/NO20052904L/no not_active Application Discontinuation
-
2006
- 2006-06-08 EP EP06747668A patent/EP1891583B1/de active Active
- 2006-06-08 US US11/917,571 patent/US8184467B2/en active Active
- 2006-06-08 RU RU2008100080/09A patent/RU2008100080A/ru not_active Application Discontinuation
- 2006-06-08 JP JP2008516772A patent/JP4782196B2/ja not_active Expired - Fee Related
- 2006-06-08 WO PCT/NO2006/000214 patent/WO2006135245A1/en active Application Filing
- 2006-06-08 AT AT06747668T patent/ATE525706T1/de not_active IP Right Cessation
- 2006-06-08 DE DE602006015808T patent/DE602006015808D1/de active Active
- 2006-06-08 WO PCT/NO2006/000216 patent/WO2006135247A1/en active Application Filing
- 2006-06-08 US US11/917,579 patent/US7764529B2/en not_active Expired - Fee Related
- 2006-06-08 JP JP2008516770A patent/JP2008544363A/ja active Pending
- 2006-06-08 EP EP06747666A patent/EP1894146B1/de not_active Not-in-force
- 2006-06-08 CN CNA200680021255XA patent/CN101198969A/zh active Pending
- 2006-06-08 RU RU2008100079/09A patent/RU2008100079A/ru not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
US20080198644A1 (en) | 2008-08-21 |
US8184467B2 (en) | 2012-05-22 |
US20080198640A1 (en) | 2008-08-21 |
EP1894146B1 (de) | 2010-07-28 |
CN101198969A (zh) | 2008-06-11 |
US7764529B2 (en) | 2010-07-27 |
NO20052904L (no) | 2006-12-15 |
JP2008544363A (ja) | 2008-12-04 |
WO2006135247A1 (en) | 2006-12-21 |
JP4782196B2 (ja) | 2011-09-28 |
EP1891583B1 (de) | 2011-09-21 |
NO20052904D0 (no) | 2005-06-14 |
RU2008100079A (ru) | 2009-07-20 |
EP1894146A4 (de) | 2009-11-25 |
WO2006135245A1 (en) | 2006-12-21 |
DE602006015808D1 (de) | 2010-09-09 |
JP2008544364A (ja) | 2008-12-04 |
EP1891583A1 (de) | 2008-02-27 |
RU2008100080A (ru) | 2009-07-20 |
EP1894146A1 (de) | 2008-03-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |