NO20052904D0 - Et ikke-flyktig elektrisk minnesystem. - Google Patents

Et ikke-flyktig elektrisk minnesystem.

Info

Publication number
NO20052904D0
NO20052904D0 NO20052904A NO20052904A NO20052904D0 NO 20052904 D0 NO20052904 D0 NO 20052904D0 NO 20052904 A NO20052904 A NO 20052904A NO 20052904 A NO20052904 A NO 20052904A NO 20052904 D0 NO20052904 D0 NO 20052904D0
Authority
NO
Norway
Prior art keywords
memory
unit
read
write
contacts
Prior art date
Application number
NO20052904A
Other languages
English (en)
Other versions
NO20052904L (no
Inventor
N N
Original Assignee
Thin Film Electronics Asa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thin Film Electronics Asa filed Critical Thin Film Electronics Asa
Priority to NO20052904A priority Critical patent/NO20052904L/no
Publication of NO20052904D0 publication Critical patent/NO20052904D0/no
Priority to JP2008516770A priority patent/JP2008544363A/ja
Priority to US11/917,571 priority patent/US8184467B2/en
Priority to JP2008516772A priority patent/JP4782196B2/ja
Priority to RU2008100079/09A priority patent/RU2008100079A/ru
Priority to US11/917,579 priority patent/US7764529B2/en
Priority to EP06747666A priority patent/EP1894146B1/en
Priority to CNA200680021255XA priority patent/CN101198969A/zh
Priority to PCT/NO2006/000216 priority patent/WO2006135247A1/en
Priority to AT06747668T priority patent/ATE525706T1/de
Priority to NO20062634A priority patent/NO20062634L/no
Priority to EP06747668A priority patent/EP1891583B1/en
Priority to PCT/NO2006/000214 priority patent/WO2006135245A1/en
Priority to DE602006015808T priority patent/DE602006015808D1/de
Priority to RU2008100080/09A priority patent/RU2008100080A/ru
Publication of NO20052904L publication Critical patent/NO20052904L/no

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K7/00—Methods or arrangements for sensing record carriers, e.g. for reading patterns
    • G06K7/0013—Methods or arrangements for sensing record carriers, e.g. for reading patterns by galvanic contacts, e.g. card connectors for ISO-7816 compliant smart cards or memory cards, e.g. SD card readers
    • G06K7/0021—Methods or arrangements for sensing record carriers, e.g. for reading patterns by galvanic contacts, e.g. card connectors for ISO-7816 compliant smart cards or memory cards, e.g. SD card readers for reading/sensing record carriers having surface contacts
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/02—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using ferroelectric record carriers; Record carriers therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5664—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using organic memory material storage elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G11C13/0016—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material comprising polymers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G11B9/1418—Disposition or mounting of heads or record carriers
    • G11B9/1427—Disposition or mounting of heads or record carriers with provision for moving the heads or record carriers relatively to each other or for access to indexed parts without effectively imparting a relative movement
    • G11B9/1436—Disposition or mounting of heads or record carriers with provision for moving the heads or record carriers relatively to each other or for access to indexed parts without effectively imparting a relative movement with provision for moving the heads or record carriers relatively to each other
    • G11B9/1454—Positioning the head or record carrier into or out of operative position or across information tracks; Alignment of the head relative to the surface of the record carrier

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Artificial Intelligence (AREA)
  • Semiconductor Memories (AREA)
  • Memory System Of A Hierarchy Structure (AREA)
  • Read Only Memory (AREA)
  • Storage Device Security (AREA)
  • Debugging And Monitoring (AREA)

Abstract

I et ikke-flyktig elektrisk minnesystem er en minneenhet og en lese/skriveenhet anordnet som fysisk separate enheter. Minneenheten er basert på et minnemateriale som kan innstilles på minst to distinkte fysiske tilstander ved å påtrykke et elektrisk felt over minnematerialet. Elektrodeanordninger og/eller kontaktanordninger er enten anordnet i minneenheten eller i lese-/skriveenheten, og kontaktanordninger er i det minste alltid anordnet i lese-/skriveenheten. Elektroder og kontakter er anordnet i et geometrisk mønster som definerer geometrisk én eller flere minneceller i minnelaget. Kontaktanordninger i lese-/skriveenheten er anordnet slik at de kan forbindes med driver-, deteksjons- og kontrollanordninger anordnet enten i minneenheten eller i lese/skriveenheten eller i en ekstern innretning forbundet med sistnevnte. Etablering av et fysisk inngrep mellom minneenheten og lese-/skriveenheten slutter en elektriske krets over en adressert minnecelle slik at en lese-, skrive- eller sletteoperasjon kan utføres. Minnematerialet i minneenheten kan være et ferroelektrisk eller elektret materiale som kan polariseres til to distinkte polarisasjonstilstander, eller det kan være et materiale med resistiv impedanskarakteristikk slik at en minnecelle av materialet kan innstilles på en spesifikk, stabil resistansverdi ved påtrykking av et elektrisk felt.
NO20052904A 2005-06-14 2005-06-14 Et ikke-flyktig elektrisk minnesystem NO20052904L (no)

Priority Applications (15)

Application Number Priority Date Filing Date Title
NO20052904A NO20052904L (no) 2005-06-14 2005-06-14 Et ikke-flyktig elektrisk minnesystem
RU2008100080/09A RU2008100080A (ru) 2005-06-14 2006-06-08 Устройство хранения данных
EP06747666A EP1894146B1 (en) 2005-06-14 2006-06-08 A data storage device
PCT/NO2006/000216 WO2006135247A1 (en) 2005-06-14 2006-06-08 A data storage device
JP2008516772A JP4782196B2 (ja) 2005-06-14 2006-06-08 データ記憶装置
RU2008100079/09A RU2008100079A (ru) 2005-06-14 2006-06-08 Устройство хранения данных
US11/917,579 US7764529B2 (en) 2005-06-14 2006-06-08 Data storage device
JP2008516770A JP2008544363A (ja) 2005-06-14 2006-06-08 データ記憶装置
CNA200680021255XA CN101198969A (zh) 2005-06-14 2006-06-08 数据存储装置
US11/917,571 US8184467B2 (en) 2005-06-14 2006-06-08 Card-like memory unit with separate read/write unit
AT06747668T ATE525706T1 (de) 2005-06-14 2006-06-08 Datenspeichereinrichtung
NO20062634A NO20062634L (no) 2005-06-14 2006-06-08 Datalagringsinnretning
EP06747668A EP1891583B1 (en) 2005-06-14 2006-06-08 A data storage device
PCT/NO2006/000214 WO2006135245A1 (en) 2005-06-14 2006-06-08 A data storage device
DE602006015808T DE602006015808D1 (de) 2005-06-14 2006-06-08 Datenspeichereinrichtung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NO20052904A NO20052904L (no) 2005-06-14 2005-06-14 Et ikke-flyktig elektrisk minnesystem

Publications (2)

Publication Number Publication Date
NO20052904D0 true NO20052904D0 (no) 2005-06-14
NO20052904L NO20052904L (no) 2006-12-15

Family

ID=35295086

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20052904A NO20052904L (no) 2005-06-14 2005-06-14 Et ikke-flyktig elektrisk minnesystem

Country Status (9)

Country Link
US (2) US7764529B2 (no)
EP (2) EP1891583B1 (no)
JP (2) JP4782196B2 (no)
CN (1) CN101198969A (no)
AT (1) ATE525706T1 (no)
DE (1) DE602006015808D1 (no)
NO (1) NO20052904L (no)
RU (2) RU2008100079A (no)
WO (2) WO2006135247A1 (no)

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Publication number Priority date Publication date Assignee Title
NO20052904L (no) * 2005-06-14 2006-12-15 Thin Film Electronics Asa Et ikke-flyktig elektrisk minnesystem
US7961506B2 (en) 2008-02-05 2011-06-14 Micron Technology, Inc. Multiple memory cells with rectifying device
WO2013000825A1 (en) 2011-06-27 2013-01-03 Thin Film Electronics Asa Short circuit reduction in an electronic component comprising a stack of layers arranged on a flexible substrate
EP2724342B1 (en) 2011-06-27 2018-10-17 Xerox Corporation Short circuit reduction in a ferroelectric memory cell comprising a stack of layers arranged on a flexible substrate
US9219225B2 (en) 2013-10-31 2015-12-22 Micron Technology, Inc. Multi-bit ferroelectric memory device and methods of forming the same
JP2016189042A (ja) * 2015-03-30 2016-11-04 株式会社クボタ カード発行機およびカード購入システム
US9886571B2 (en) 2016-02-16 2018-02-06 Xerox Corporation Security enhancement of customer replaceable unit monitor (CRUM)
US10978169B2 (en) 2017-03-17 2021-04-13 Xerox Corporation Pad detection through pattern analysis
US9934415B1 (en) 2017-04-20 2018-04-03 Xerox Corporation Handheld reader having transparent circuit board for alignment of multiple electrical contacts
US10396124B2 (en) 2017-07-05 2019-08-27 Xerox Corporation Memory cells and devices
WO2019045087A1 (en) * 2017-08-28 2019-03-07 Mapper Lithography Ip B.V. MEMORY DEVICE WITH PREDETERMINED STARTING VALUE
US11055167B2 (en) * 2018-05-14 2021-07-06 Micron Technology, Inc. Channel-scope proximity disturb and defect remapping scheme for non-volatile memory
US10838831B2 (en) * 2018-05-14 2020-11-17 Micron Technology, Inc. Die-scope proximity disturb and defect remapping scheme for non-volatile memory
US10304836B1 (en) 2018-07-18 2019-05-28 Xerox Corporation Protective layers for high-yield printed electronic devices
US10249625B1 (en) 2018-07-18 2019-04-02 Xerox Corporation Coated printed electronic devices exhibiting improved yield
US10593684B2 (en) 2018-07-18 2020-03-17 Xerox Corporation Printed electronic devices exhibiting improved yield
DE102020108366A1 (de) 2020-03-26 2021-09-30 Bayerische Motoren Werke Aktiengesellschaft Informationsspeicher und Verfahren zum Programmieren und Auslesen von Informationen
CN115273934A (zh) 2020-04-06 2022-11-01 昕原半导体(上海)有限公司 利用芯片上电阻存储器阵列的不可克隆特性的独特芯片标识符
US11823739B2 (en) * 2020-04-06 2023-11-21 Crossbar, Inc. Physically unclonable function (PUF) generation involving high side programming of bits
US12087397B1 (en) 2020-04-06 2024-09-10 Crossbar, Inc. Dynamic host allocation of physical unclonable feature operation for resistive switching memory
US11727986B2 (en) * 2020-04-06 2023-08-15 Crossbar, Inc. Physically unclonable function (PUF) generation involving programming of marginal bits

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NO20052904L (no) * 2005-06-14 2006-12-15 Thin Film Electronics Asa Et ikke-flyktig elektrisk minnesystem

Also Published As

Publication number Publication date
JP4782196B2 (ja) 2011-09-28
EP1894146A4 (en) 2009-11-25
JP2008544364A (ja) 2008-12-04
EP1891583B1 (en) 2011-09-21
US20080198640A1 (en) 2008-08-21
WO2006135247A1 (en) 2006-12-21
RU2008100080A (ru) 2009-07-20
NO20052904L (no) 2006-12-15
US20080198644A1 (en) 2008-08-21
RU2008100079A (ru) 2009-07-20
WO2006135245A1 (en) 2006-12-21
JP2008544363A (ja) 2008-12-04
EP1891583A1 (en) 2008-02-27
US7764529B2 (en) 2010-07-27
ATE525706T1 (de) 2011-10-15
CN101198969A (zh) 2008-06-11
EP1894146A1 (en) 2008-03-05
EP1894146B1 (en) 2010-07-28
DE602006015808D1 (de) 2010-09-09
US8184467B2 (en) 2012-05-22

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