NO20052904D0 - Et ikke-flyktig elektrisk minnesystem. - Google Patents

Et ikke-flyktig elektrisk minnesystem.

Info

Publication number
NO20052904D0
NO20052904D0 NO20052904A NO20052904A NO20052904D0 NO 20052904 D0 NO20052904 D0 NO 20052904D0 NO 20052904 A NO20052904 A NO 20052904A NO 20052904 A NO20052904 A NO 20052904A NO 20052904 D0 NO20052904 D0 NO 20052904D0
Authority
NO
Norway
Prior art keywords
memory
unit
read
write
contacts
Prior art date
Application number
NO20052904A
Other languages
English (en)
Other versions
NO20052904L (no
Inventor
N N
Original Assignee
Thin Film Electronics Asa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thin Film Electronics Asa filed Critical Thin Film Electronics Asa
Priority to NO20052904A priority Critical patent/NO20052904L/no
Publication of NO20052904D0 publication Critical patent/NO20052904D0/no
Priority to AT06747668T priority patent/ATE525706T1/de
Priority to NO20062634A priority patent/NO20062634L/no
Priority to RU2008100080/09A priority patent/RU2008100080A/ru
Priority to PCT/NO2006/000214 priority patent/WO2006135245A1/en
Priority to DE602006015808T priority patent/DE602006015808D1/de
Priority to CNA200680021255XA priority patent/CN101198969A/zh
Priority to US11/917,579 priority patent/US7764529B2/en
Priority to JP2008516772A priority patent/JP4782196B2/ja
Priority to PCT/NO2006/000216 priority patent/WO2006135247A1/en
Priority to US11/917,571 priority patent/US8184467B2/en
Priority to RU2008100079/09A priority patent/RU2008100079A/ru
Priority to EP06747666A priority patent/EP1894146B1/en
Priority to JP2008516770A priority patent/JP2008544363A/ja
Priority to EP06747668A priority patent/EP1891583B1/en
Publication of NO20052904L publication Critical patent/NO20052904L/no

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K7/00—Methods or arrangements for sensing record carriers, e.g. for reading patterns
    • G06K7/0013—Methods or arrangements for sensing record carriers, e.g. for reading patterns by galvanic contacts, e.g. card connectors for ISO-7816 compliant smart cards or memory cards, e.g. SD card readers
    • G06K7/0021—Methods or arrangements for sensing record carriers, e.g. for reading patterns by galvanic contacts, e.g. card connectors for ISO-7816 compliant smart cards or memory cards, e.g. SD card readers for reading/sensing record carriers having surface contacts
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/02—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using ferroelectric record carriers; Record carriers therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5664—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using organic memory material storage elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G11C13/0016—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material comprising polymers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G11B9/1418—Disposition or mounting of heads or record carriers
    • G11B9/1427—Disposition or mounting of heads or record carriers with provision for moving the heads or record carriers relatively to each other or for access to indexed parts without effectively imparting a relative movement
    • G11B9/1436—Disposition or mounting of heads or record carriers with provision for moving the heads or record carriers relatively to each other or for access to indexed parts without effectively imparting a relative movement with provision for moving the heads or record carriers relatively to each other
    • G11B9/1454—Positioning the head or record carrier into or out of operative position or across information tracks; Alignment of the head relative to the surface of the record carrier

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Artificial Intelligence (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Semiconductor Memories (AREA)
  • Memory System Of A Hierarchy Structure (AREA)
  • Storage Device Security (AREA)
  • Debugging And Monitoring (AREA)
  • Read Only Memory (AREA)

Abstract

I et ikke-flyktig elektrisk minnesystem er en minneenhet og en lese/skriveenhet anordnet som fysisk separate enheter. Minneenheten er basert på et minnemateriale som kan innstilles på minst to distinkte fysiske tilstander ved å påtrykke et elektrisk felt over minnematerialet. Elektrodeanordninger og/eller kontaktanordninger er enten anordnet i minneenheten eller i lese-/skriveenheten, og kontaktanordninger er i det minste alltid anordnet i lese-/skriveenheten. Elektroder og kontakter er anordnet i et geometrisk mønster som definerer geometrisk én eller flere minneceller i minnelaget. Kontaktanordninger i lese-/skriveenheten er anordnet slik at de kan forbindes med driver-, deteksjons- og kontrollanordninger anordnet enten i minneenheten eller i lese/skriveenheten eller i en ekstern innretning forbundet med sistnevnte. Etablering av et fysisk inngrep mellom minneenheten og lese-/skriveenheten slutter en elektriske krets over en adressert minnecelle slik at en lese-, skrive- eller sletteoperasjon kan utføres. Minnematerialet i minneenheten kan være et ferroelektrisk eller elektret materiale som kan polariseres til to distinkte polarisasjonstilstander, eller det kan være et materiale med resistiv impedanskarakteristikk slik at en minnecelle av materialet kan innstilles på en spesifikk, stabil resistansverdi ved påtrykking av et elektrisk felt.
NO20052904A 2005-06-14 2005-06-14 Et ikke-flyktig elektrisk minnesystem NO20052904L (no)

Priority Applications (15)

Application Number Priority Date Filing Date Title
NO20052904A NO20052904L (no) 2005-06-14 2005-06-14 Et ikke-flyktig elektrisk minnesystem
EP06747668A EP1891583B1 (en) 2005-06-14 2006-06-08 A data storage device
CNA200680021255XA CN101198969A (zh) 2005-06-14 2006-06-08 数据存储装置
JP2008516772A JP4782196B2 (ja) 2005-06-14 2006-06-08 データ記憶装置
RU2008100080/09A RU2008100080A (ru) 2005-06-14 2006-06-08 Устройство хранения данных
PCT/NO2006/000214 WO2006135245A1 (en) 2005-06-14 2006-06-08 A data storage device
DE602006015808T DE602006015808D1 (de) 2005-06-14 2006-06-08 Datenspeichereinrichtung
AT06747668T ATE525706T1 (de) 2005-06-14 2006-06-08 Datenspeichereinrichtung
US11/917,579 US7764529B2 (en) 2005-06-14 2006-06-08 Data storage device
NO20062634A NO20062634L (no) 2005-06-14 2006-06-08 Datalagringsinnretning
PCT/NO2006/000216 WO2006135247A1 (en) 2005-06-14 2006-06-08 A data storage device
US11/917,571 US8184467B2 (en) 2005-06-14 2006-06-08 Card-like memory unit with separate read/write unit
RU2008100079/09A RU2008100079A (ru) 2005-06-14 2006-06-08 Устройство хранения данных
EP06747666A EP1894146B1 (en) 2005-06-14 2006-06-08 A data storage device
JP2008516770A JP2008544363A (ja) 2005-06-14 2006-06-08 データ記憶装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NO20052904A NO20052904L (no) 2005-06-14 2005-06-14 Et ikke-flyktig elektrisk minnesystem

Publications (2)

Publication Number Publication Date
NO20052904D0 true NO20052904D0 (no) 2005-06-14
NO20052904L NO20052904L (no) 2006-12-15

Family

ID=35295086

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20052904A NO20052904L (no) 2005-06-14 2005-06-14 Et ikke-flyktig elektrisk minnesystem

Country Status (9)

Country Link
US (2) US8184467B2 (no)
EP (2) EP1891583B1 (no)
JP (2) JP2008544363A (no)
CN (1) CN101198969A (no)
AT (1) ATE525706T1 (no)
DE (1) DE602006015808D1 (no)
NO (1) NO20052904L (no)
RU (2) RU2008100080A (no)
WO (2) WO2006135245A1 (no)

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Publication number Priority date Publication date Assignee Title
NO20052904L (no) * 2005-06-14 2006-12-15 Thin Film Electronics Asa Et ikke-flyktig elektrisk minnesystem
US7961506B2 (en) 2008-02-05 2011-06-14 Micron Technology, Inc. Multiple memory cells with rectifying device
CN103620681B (zh) 2011-06-27 2016-11-02 薄膜电子有限公司 具有横向尺寸改变吸收缓冲层的电子部件及其生产方法
CN106876398B (zh) 2011-06-27 2020-10-20 薄膜电子有限公司 含横向尺寸改变吸收缓冲层的铁电存储单元及其制造方法
US9219225B2 (en) 2013-10-31 2015-12-22 Micron Technology, Inc. Multi-bit ferroelectric memory device and methods of forming the same
JP2016189042A (ja) * 2015-03-30 2016-11-04 株式会社クボタ カード発行機およびカード購入システム
US9886571B2 (en) 2016-02-16 2018-02-06 Xerox Corporation Security enhancement of customer replaceable unit monitor (CRUM)
US10978169B2 (en) 2017-03-17 2021-04-13 Xerox Corporation Pad detection through pattern analysis
US9934415B1 (en) 2017-04-20 2018-04-03 Xerox Corporation Handheld reader having transparent circuit board for alignment of multiple electrical contacts
US10396124B2 (en) 2017-07-05 2019-08-27 Xerox Corporation Memory cells and devices
KR102626791B1 (ko) * 2017-08-28 2024-01-19 에이에스엠엘 네델란즈 비.브이. 미리 결정된 시동 값을 갖는 메모리 디바이스
US10838831B2 (en) * 2018-05-14 2020-11-17 Micron Technology, Inc. Die-scope proximity disturb and defect remapping scheme for non-volatile memory
US11055167B2 (en) * 2018-05-14 2021-07-06 Micron Technology, Inc. Channel-scope proximity disturb and defect remapping scheme for non-volatile memory
US10249625B1 (en) 2018-07-18 2019-04-02 Xerox Corporation Coated printed electronic devices exhibiting improved yield
US10304836B1 (en) 2018-07-18 2019-05-28 Xerox Corporation Protective layers for high-yield printed electronic devices
US10593684B2 (en) 2018-07-18 2020-03-17 Xerox Corporation Printed electronic devices exhibiting improved yield
DE102020108366A1 (de) 2020-03-26 2021-09-30 Bayerische Motoren Werke Aktiengesellschaft Informationsspeicher und Verfahren zum Programmieren und Auslesen von Informationen
US12087397B1 (en) 2020-04-06 2024-09-10 Crossbar, Inc. Dynamic host allocation of physical unclonable feature operation for resistive switching memory
US11450384B2 (en) 2020-04-06 2022-09-20 Crossbar, Inc. Distinct chip identifier sequence utilizing unclonable characteristics of resistive memory on a chip
US11727986B2 (en) * 2020-04-06 2023-08-15 Crossbar, Inc. Physically unclonable function (PUF) generation involving programming of marginal bits
US11823739B2 (en) * 2020-04-06 2023-11-21 Crossbar, Inc. Physically unclonable function (PUF) generation involving high side programming of bits

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JP2788265B2 (ja) 1988-07-08 1998-08-20 オリンパス光学工業株式会社 強誘電体メモリ及びその駆動方法，製造方法
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KR100612867B1 (ko) * 2004-11-02 2006-08-14 삼성전자주식회사 탐침 어레이를 가지는 저항성 메모리 소자 및 그 제조 방법
NO20052904L (no) * 2005-06-14 2006-12-15 Thin Film Electronics Asa Et ikke-flyktig elektrisk minnesystem

Also Published As

Publication number Publication date
NO20052904L (no) 2006-12-15
US8184467B2 (en) 2012-05-22
US20080198640A1 (en) 2008-08-21
WO2006135245A1 (en) 2006-12-21
ATE525706T1 (de) 2011-10-15
EP1891583A1 (en) 2008-02-27
US7764529B2 (en) 2010-07-27
DE602006015808D1 (de) 2010-09-09
EP1894146B1 (en) 2010-07-28
JP4782196B2 (ja) 2011-09-28
CN101198969A (zh) 2008-06-11
US20080198644A1 (en) 2008-08-21
RU2008100080A (ru) 2009-07-20
JP2008544364A (ja) 2008-12-04
JP2008544363A (ja) 2008-12-04
EP1894146A4 (en) 2009-11-25
EP1894146A1 (en) 2008-03-05
WO2006135247A1 (en) 2006-12-21
RU2008100079A (ru) 2009-07-20
EP1891583B1 (en) 2011-09-21

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