DE60130586D1 - Speicherzelle - Google Patents
SpeicherzelleInfo
- Publication number
- DE60130586D1 DE60130586D1 DE60130586T DE60130586T DE60130586D1 DE 60130586 D1 DE60130586 D1 DE 60130586D1 DE 60130586 T DE60130586 T DE 60130586T DE 60130586 T DE60130586 T DE 60130586T DE 60130586 D1 DE60130586 D1 DE 60130586D1
- Authority
- DE
- Germany
- Prior art keywords
- cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0064—Verifying circuits or methods
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5664—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using organic memory material storage elements
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
- G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
- G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
- G11C13/0016—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material comprising polymers
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
- H10K19/202—Integrated devices comprising a common active layer
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of the switching material, e.g. layer deposition
- H10N70/023—Formation of the switching material, e.g. layer deposition by chemical vapor deposition, e.g. MOCVD, ALD
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
- H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
- H10N70/8416—Electrodes adapted for supplying ionic species
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8822—Sulfides, e.g. CuS
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8825—Selenides, e.g. GeSe
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8833—Binary metal oxides, e.g. TaOx
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8836—Complex metal oxides, e.g. perovskites, spinels
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/10—Resistive cells; Technology aspects
- G11C2213/11—Metal ion trapping, i.e. using memory material including cavities, pores or spaces in form of tunnels or channels wherein metal ions can be trapped but do not react and form an electro-deposit creating filaments or dendrites
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/10—Resistive cells; Technology aspects
- G11C2213/15—Current-voltage curve
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/30—Resistive cell, memory material aspects
- G11C2213/34—Material includes an oxide or a nitride
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/30—Resistive cell, memory material aspects
- G11C2213/35—Material including carbon, e.g. graphite, grapheme
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/50—Resistive cell structure aspects
- G11C2213/52—Structure characterized by the electrode material, shape, etc.
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/50—Resistive cell structure aspects
- G11C2213/56—Structure including two electrodes, a memory active layer and a so called passive or source or reservoir layer which is NOT an electrode, wherein the passive or source or reservoir layer is a source of ions which migrate afterwards in the memory active layer to be only trapped there, to form conductive filaments there or to react with the material of the memory active layer in redox way
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/71—Three dimensional array
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/77—Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/701—Organic molecular electronic devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
- H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
- H10K85/143—Polyacetylene; Derivatives thereof
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
- H10K85/146—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE poly N-vinylcarbazol; Derivatives thereof
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/311—Phthalocyanine
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/40—Organosilicon compounds, e.g. TIPS pentacene
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/611—Charge transfer complexes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/RU2001/000334 WO2003017282A1 (fr) | 2001-08-13 | 2001-08-13 | Cellule de memoire |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60130586D1 true DE60130586D1 (de) | 2007-10-31 |
DE60130586T2 DE60130586T2 (de) | 2008-06-19 |
Family
ID=20129643
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60130586T Expired - Lifetime DE60130586T2 (de) | 2001-08-13 | 2001-08-13 | Speicherzelle |
Country Status (8)
Country | Link |
---|---|
US (5) | US6992323B2 (de) |
EP (1) | EP1434232B1 (de) |
JP (1) | JP2005500682A (de) |
KR (1) | KR100860134B1 (de) |
CN (1) | CN100419906C (de) |
BR (1) | BR0117103A (de) |
DE (1) | DE60130586T2 (de) |
WO (1) | WO2003017282A1 (de) |
Families Citing this family (255)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4731794B2 (ja) | 2001-05-07 | 2011-07-27 | アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド | メモリ効果を有するスイッチ素子及び該素子をスイッチングさせる方法 |
US6781868B2 (en) | 2001-05-07 | 2004-08-24 | Advanced Micro Devices, Inc. | Molecular memory device |
CN100419906C (zh) | 2001-08-13 | 2008-09-17 | 先进微装置公司 | 存储器单元 |
US6806526B2 (en) | 2001-08-13 | 2004-10-19 | Advanced Micro Devices, Inc. | Memory device |
US6768157B2 (en) | 2001-08-13 | 2004-07-27 | Advanced Micro Devices, Inc. | Memory device |
US6889216B2 (en) | 2002-03-12 | 2005-05-03 | Knowm Tech, Llc | Physical neural network design incorporating nanotechnology |
US7412428B2 (en) | 2002-03-12 | 2008-08-12 | Knowmtech, Llc. | Application of hebbian and anti-hebbian learning to nanotechnology-based physical neural networks |
US9269043B2 (en) | 2002-03-12 | 2016-02-23 | Knowm Tech, Llc | Memristive neural processor utilizing anti-hebbian and hebbian technology |
US8156057B2 (en) | 2003-03-27 | 2012-04-10 | Knowm Tech, Llc | Adaptive neural network utilizing nanotechnology-based components |
US7392230B2 (en) | 2002-03-12 | 2008-06-24 | Knowmtech, Llc | Physical neural network liquid state machine utilizing nanotechnology |
US7398259B2 (en) | 2002-03-12 | 2008-07-08 | Knowmtech, Llc | Training of a physical neural network |
US7752151B2 (en) | 2002-06-05 | 2010-07-06 | Knowmtech, Llc | Multilayer training in a physical neural network formed utilizing nanotechnology |
US7827131B2 (en) | 2002-08-22 | 2010-11-02 | Knowm Tech, Llc | High density synapse chip using nanoparticles |
US6836398B1 (en) * | 2002-10-31 | 2004-12-28 | Advanced Micro Devices, Inc. | System and method of forming a passive layer by a CMP process |
US7482621B2 (en) * | 2003-02-03 | 2009-01-27 | The Regents Of The University Of California | Rewritable nano-surface organic electrical bistable devices |
US6656763B1 (en) * | 2003-03-10 | 2003-12-02 | Advanced Micro Devices, Inc. | Spin on polymers for organic memory devices |
US6995445B2 (en) * | 2003-03-14 | 2006-02-07 | The Trustees Of Princeton University | Thin film organic position sensitive detectors |
US7297621B2 (en) * | 2003-04-15 | 2007-11-20 | California Institute Of Technology | Flexible carbon-based ohmic contacts for organic transistors |
US6977389B2 (en) * | 2003-06-02 | 2005-12-20 | Advanced Micro Devices, Inc. | Planar polymer memory device |
US6921912B2 (en) * | 2003-06-03 | 2005-07-26 | Micron Technology, Inc. | Diode/superionic conductor/polymer memory structure |
US20050006640A1 (en) * | 2003-06-26 | 2005-01-13 | Jackson Warren B. | Polymer-based memory element |
US6787458B1 (en) * | 2003-07-07 | 2004-09-07 | Advanced Micro Devices, Inc. | Polymer memory device formed in via opening |
US7259039B2 (en) * | 2003-07-09 | 2007-08-21 | Spansion Llc | Memory device and methods of using and making the device |
DE112004000060B4 (de) * | 2003-07-18 | 2011-01-27 | Nec Corp. | Schaltelemente |
US7426501B2 (en) | 2003-07-18 | 2008-09-16 | Knowntech, Llc | Nanotechnology neural network methods and systems |
KR100615586B1 (ko) * | 2003-07-23 | 2006-08-25 | 삼성전자주식회사 | 다공성 유전막 내에 국부적인 상전이 영역을 구비하는상전이 메모리 소자 및 그 제조 방법 |
US7274035B2 (en) * | 2003-09-03 | 2007-09-25 | The Regents Of The University Of California | Memory devices based on electric field programmable films |
DE10342026A1 (de) * | 2003-09-11 | 2005-04-28 | Infineon Technologies Ag | Speicherzelle mit Ionenleitungsspeichermechanismus und Verfahren zu deren Herstellung |
US6852586B1 (en) * | 2003-10-01 | 2005-02-08 | Advanced Micro Devices, Inc. | Self assembly of conducting polymer for formation of polymer memory cell |
US7015504B2 (en) * | 2003-11-03 | 2006-03-21 | Advanced Micro Devices, Inc. | Sidewall formation for high density polymer memory element array |
JP2005150156A (ja) * | 2003-11-11 | 2005-06-09 | Toshiba Corp | 磁気記憶装置 |
WO2005086627A2 (en) * | 2003-12-03 | 2005-09-22 | The Regents Of The University Of California | Three-terminal electrical bistable devices |
JP4385778B2 (ja) * | 2004-01-29 | 2009-12-16 | ソニー株式会社 | 記憶装置 |
US6956761B2 (en) * | 2004-03-10 | 2005-10-18 | Micron Technology, Inc. | Method to manufacture polymer memory with copper ion switching species |
CA2500938A1 (en) * | 2004-03-24 | 2005-09-24 | Rohm And Haas Company | Memory devices based on electric field programmable films |
JP2007531260A (ja) * | 2004-03-26 | 2007-11-01 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 相変化材料を含む電気デバイス |
US7205595B2 (en) * | 2004-03-31 | 2007-04-17 | Intel Corporation | Polymer memory device with electron traps |
US7608855B2 (en) * | 2004-04-02 | 2009-10-27 | Spansion Llc | Polymer dielectrics for memory element array interconnect |
WO2006001923A2 (en) * | 2004-05-17 | 2006-01-05 | The Regents Of The University Of California | Bistable nanoparticle- polymer composite for use in memory devices |
US20050274609A1 (en) * | 2004-05-18 | 2005-12-15 | Yong Chen | Composition of matter which results in electronic switching through intra- or inter- molecular charge transfer, or charge transfer between molecules and electrodes induced by an electrical field |
DE102004024610B3 (de) * | 2004-05-18 | 2005-12-29 | Infineon Technologies Ag | Festkörperelektrolytschaltelement |
US7554111B2 (en) * | 2004-05-20 | 2009-06-30 | The Regents Of The University Of California | Nanoparticle-polymer bistable devices |
DE102004031135A1 (de) * | 2004-06-28 | 2006-01-19 | Infineon Technologies Ag | Resistives Halbleiterelement basierend auf einem Festkörperionenleiter |
US7157732B2 (en) * | 2004-07-01 | 2007-01-02 | Spansion Llc | Switchable memory diode-a new memory device |
US7220982B2 (en) * | 2004-07-27 | 2007-05-22 | Micron Technology, Inc. | Amorphous carbon-based non-volatile memory |
US20060035474A1 (en) * | 2004-08-10 | 2006-02-16 | Pavel Komilovich | Increasing retention time for memory devices |
US7199394B2 (en) * | 2004-08-17 | 2007-04-03 | Spansion Llc | Polymer memory device with variable period of retention time |
US7289353B2 (en) | 2004-08-17 | 2007-10-30 | Spansion, Llc | Systems and methods for adjusting programming thresholds of polymer memory cells |
US7166543B2 (en) * | 2004-08-30 | 2007-01-23 | Micron Technology, Inc. | Methods for forming an enriched metal oxide surface for use in a semiconductor device |
DE102004046392A1 (de) * | 2004-09-24 | 2006-04-06 | Infineon Technologies Ag | Halbleiterspeicher |
US7557782B2 (en) * | 2004-10-20 | 2009-07-07 | Hewlett-Packard Development Company, L.P. | Display device including variable optical element and programmable resistance element |
EP1805758A4 (de) * | 2004-10-28 | 2009-09-09 | Regents Of The University The | Organisch komplexe, dünne folie für nichtflüchtige speichervorrichtungen |
US7221599B1 (en) * | 2004-11-01 | 2007-05-22 | Spansion, Llc | Polymer memory cell operation |
JP5007566B2 (ja) * | 2004-11-08 | 2012-08-22 | 学校法人早稲田大学 | メモリー素子及びその製造方法 |
KR100657911B1 (ko) * | 2004-11-10 | 2006-12-14 | 삼성전자주식회사 | 한 개의 저항체와 한 개의 다이오드를 지닌 비휘발성메모리 소자 |
KR101187400B1 (ko) * | 2004-11-26 | 2012-10-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치 |
KR100651656B1 (ko) * | 2004-11-29 | 2006-12-01 | 한국과학기술연구원 | 투명전도성 산화물 전극 접촉 재료를 갖는 상변화 메모리 셀 |
EP1820215A4 (de) * | 2004-12-07 | 2008-11-12 | Semiconductor Energy Lab | Speicherbaustein und halbleiterbaustein |
FR2880177B1 (fr) | 2004-12-23 | 2007-05-18 | Commissariat Energie Atomique | Memoire pmc ayant un temps de retention et une vitesse d'ecriture ameliores |
US7208757B1 (en) * | 2004-12-23 | 2007-04-24 | Spansion Llc | Memory element with nitrogen-containing active layer |
US7102156B1 (en) * | 2004-12-23 | 2006-09-05 | Spansion Llc Advanced Micro Devices, Inc | Memory elements using organic active layer |
US7084062B1 (en) | 2005-01-12 | 2006-08-01 | Advanced Micro Devices, Inc. | Use of Ta-capped metal line to improve formation of memory element films |
US7273766B1 (en) * | 2005-01-12 | 2007-09-25 | Spansion Llc | Variable density and variable persistent organic memory devices, methods, and fabrication |
KR101067582B1 (ko) * | 2005-01-20 | 2011-09-27 | 삼성전자주식회사 | 메모리 소자의 다중 상태 구동 방법 |
DE102005004107A1 (de) * | 2005-01-28 | 2006-08-17 | Infineon Technologies Ag | Integrierter Halbleiterspeicher mit einer Anordnung nichtflüchtiger Speicherzellen und Verfahren |
US7502769B2 (en) | 2005-01-31 | 2009-03-10 | Knowmtech, Llc | Fractal memory and computational methods and systems based on nanotechnology |
KR101078125B1 (ko) * | 2005-02-07 | 2011-10-28 | 삼성전자주식회사 | 다공성 물질을 이용한 비휘발성 나노 채널 메모리 소자 |
KR101036975B1 (ko) * | 2005-02-14 | 2011-05-25 | 삼성전자주식회사 | 스위칭 윈도우를 조정하는 저항부를 포함하는 저항 변화형메모리 소자 |
US8193606B2 (en) | 2005-02-28 | 2012-06-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including a memory element |
KR100682939B1 (ko) | 2005-03-16 | 2007-02-15 | 삼성전자주식회사 | 입체 구조의 고체전해질을 이용한 반도체 메모리 장치 및그 제조방법 |
US7579631B2 (en) * | 2005-03-22 | 2009-08-25 | Spansion Llc | Variable breakdown characteristic diode |
US7145824B2 (en) * | 2005-03-22 | 2006-12-05 | Spansion Llc | Temperature compensation of thin film diode voltage threshold in memory sensing circuit |
US7180770B2 (en) * | 2005-03-24 | 2007-02-20 | Hewlett-Packard Development Company, L.P. | Series diode thermally assisted MRAM |
US7307321B1 (en) * | 2005-03-25 | 2007-12-11 | Spansion Llc | Memory device with improved data retention |
CN101615623B (zh) * | 2005-03-25 | 2012-07-04 | 株式会社半导体能源研究所 | 存储器电路 |
US7830015B2 (en) * | 2005-03-25 | 2010-11-09 | Spansion Llc | Memory device with improved data retention |
US8098521B2 (en) * | 2005-03-31 | 2012-01-17 | Spansion Llc | Method of providing an erase activation energy of a memory device |
US7344913B1 (en) | 2005-04-06 | 2008-03-18 | Spansion Llc | Spin on memory cell active layer doped with metal ions |
US7776682B1 (en) * | 2005-04-20 | 2010-08-17 | Spansion Llc | Ordered porosity to direct memory element formation |
CN101167189B (zh) * | 2005-04-27 | 2013-09-18 | 株式会社半导体能源研究所 | 半导体器件的制造方法 |
US20060245235A1 (en) * | 2005-05-02 | 2006-11-02 | Advanced Micro Devices, Inc. | Design and operation of a resistance switching memory cell with diode |
US7812404B2 (en) * | 2005-05-09 | 2010-10-12 | Sandisk 3D Llc | Nonvolatile memory cell comprising a diode and a resistance-switching material |
US20060256608A1 (en) * | 2005-05-11 | 2006-11-16 | Spansion Llc | Resistive memory device with improved data retention and reduced power |
JP4552752B2 (ja) * | 2005-05-16 | 2010-09-29 | ソニー株式会社 | 記憶素子の製造方法、記憶装置の製造方法 |
NO324539B1 (no) * | 2005-06-14 | 2007-11-19 | Thin Film Electronics Asa | Fremgangsmate i fabrikasjonen av en ferroelektrisk minneinnretning |
US7286388B1 (en) * | 2005-06-23 | 2007-10-23 | Spansion Llc | Resistive memory device with improved data retention |
US7361586B2 (en) * | 2005-07-01 | 2008-04-22 | Spansion Llc | Preamorphization to minimize void formation |
US20070009821A1 (en) * | 2005-07-08 | 2007-01-11 | Charlotte Cutler | Devices containing multi-bit data |
US7746533B2 (en) * | 2005-07-11 | 2010-06-29 | The University Of Connecticut | Electrochromic devices utilizing very low band gap conjugated counter electrodes: preparation and use |
US7935957B2 (en) * | 2005-08-12 | 2011-05-03 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and a semiconductor device |
US7582893B2 (en) * | 2005-09-15 | 2009-09-01 | Spansion Llc | Semiconductor memory device comprising one or more injecting bilayer electrodes |
US7307280B1 (en) * | 2005-09-16 | 2007-12-11 | Spansion Llc | Memory devices with active and passive doped sol-gel layers |
US7633129B1 (en) * | 2005-09-16 | 2009-12-15 | Spansion Llc | Memory devices with active and passive layers having multiple self-assembled sublayers |
US7268364B2 (en) * | 2005-09-23 | 2007-09-11 | Aculon, Inc. | Hybrid devices |
US7632706B2 (en) * | 2005-10-21 | 2009-12-15 | Spansion Llc | System and method for processing an organic memory cell |
US7741638B2 (en) * | 2005-11-23 | 2010-06-22 | Hewlett-Packard Development Company, L.P. | Control layer for a nanoscale electronic switching device |
US8173995B2 (en) * | 2005-12-23 | 2012-05-08 | E. I. Du Pont De Nemours And Company | Electronic device including an organic active layer and process for forming the electronic device |
FR2895531B1 (fr) * | 2005-12-23 | 2008-05-09 | Commissariat Energie Atomique | Procede ameliore de realisation de cellules memoires de type pmc |
KR20070075812A (ko) * | 2006-01-16 | 2007-07-24 | 삼성전자주식회사 | 스토리지 노드에 비정질 고체 전해질층을 포함하는 저항성메모리 소자 |
KR101206605B1 (ko) * | 2006-02-02 | 2012-11-29 | 삼성전자주식회사 | 유기 메모리 소자 및 그의 제조방법 |
US8089110B1 (en) * | 2006-02-09 | 2012-01-03 | Spansion Llc | Switchable memory diodes based on ferroelectric/conjugated polymer heterostructures and/or their composites |
JP5417709B2 (ja) * | 2006-02-09 | 2014-02-19 | 日本電気株式会社 | スイッチング素子、書き換え可能な論理集積回路、およびメモリ素子 |
US7605410B2 (en) * | 2006-02-23 | 2009-10-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
CN101401209B (zh) * | 2006-03-10 | 2011-05-25 | 株式会社半导体能源研究所 | 存储元件以及半导体器件 |
US7875871B2 (en) | 2006-03-31 | 2011-01-25 | Sandisk 3D Llc | Heterojunction device comprising a semiconductor and a resistivity-switching oxide or nitride |
US8502198B2 (en) * | 2006-04-28 | 2013-08-06 | Hewlett-Packard Development Company, L.P. | Switching device and methods for controlling electron tunneling therein |
US7719001B2 (en) * | 2006-06-28 | 2010-05-18 | Semiconductor Energy Laboratory Co., Ltd | Semiconductor device with metal oxides and an organic compound |
US8115282B2 (en) * | 2006-07-25 | 2012-02-14 | Adesto Technology Corporation | Memory cell device and method of manufacture |
EP1883109B1 (de) | 2006-07-28 | 2013-05-15 | Semiconductor Energy Laboratory Co., Ltd. | Speicherelement und Verfahren zu dessen Hertsellung |
FR2905028B1 (fr) * | 2006-08-21 | 2008-12-19 | Commissariat Energie Atomique | Dispositif de memoire electrochimique |
KR100836759B1 (ko) * | 2006-10-04 | 2008-06-10 | 삼성전자주식회사 | 유기 메모리 소자 및 그 형성 방법 |
US8790819B1 (en) * | 2006-10-06 | 2014-07-29 | Greatbatch Ltd. | Implantable medical assembly |
US10134985B2 (en) | 2006-10-20 | 2018-11-20 | The Regents Of The University Of Michigan | Non-volatile solid state resistive switching devices |
KR101249117B1 (ko) * | 2006-11-13 | 2013-03-29 | 삼성전자주식회사 | 메탈로센 덴드리머, 이를 이용한 유기 메모리 소자 및 그의제조방법 |
US7988057B2 (en) | 2006-11-28 | 2011-08-02 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and semiconductor device |
US7902086B2 (en) * | 2006-12-08 | 2011-03-08 | Spansion Llc | Prevention of oxidation of carrier ions to improve memory retention properties of polymer memory cell |
US7449742B2 (en) * | 2006-12-20 | 2008-11-11 | Spansion Llc | Memory device with active layer of dendrimeric material |
US7930257B2 (en) | 2007-01-05 | 2011-04-19 | Knowm Tech, Llc | Hierarchical temporal memory utilizing nanotechnology |
KR101313784B1 (ko) * | 2007-01-12 | 2013-10-01 | 삼성전자주식회사 | 저항성 메모리 소자 및 그 제조방법 |
US7667220B2 (en) * | 2007-01-19 | 2010-02-23 | Macronix International Co., Ltd. | Multilevel-cell memory structures employing multi-memory with tungsten oxides and manufacturing method |
US8373148B2 (en) * | 2007-04-26 | 2013-02-12 | Spansion Llc | Memory device with improved performance |
US20090104756A1 (en) * | 2007-06-29 | 2009-04-23 | Tanmay Kumar | Method to form a rewriteable memory cell comprising a diode and a resistivity-switching grown oxide |
US7902537B2 (en) | 2007-06-29 | 2011-03-08 | Sandisk 3D Llc | Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same |
US8233308B2 (en) * | 2007-06-29 | 2012-07-31 | Sandisk 3D Llc | Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same |
US7824956B2 (en) | 2007-06-29 | 2010-11-02 | Sandisk 3D Llc | Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same |
JP5227544B2 (ja) * | 2007-07-12 | 2013-07-03 | 株式会社日立製作所 | 半導体装置 |
US8946020B2 (en) * | 2007-09-06 | 2015-02-03 | Spansion, Llc | Method of forming controllably conductive oxide |
FR2922368A1 (fr) * | 2007-10-16 | 2009-04-17 | Commissariat Energie Atomique | Procede de fabrication d'une memoire cbram ayant une fiabilite amelioree |
US7558101B1 (en) * | 2007-12-14 | 2009-07-07 | Spansion Llc | Scan sensing method that improves sensing margins |
FR2928768B1 (fr) | 2008-03-13 | 2010-04-09 | Commissariat Energie Atomique | Dispositif de memoire electrochimique non-volatile |
US8133793B2 (en) | 2008-05-16 | 2012-03-13 | Sandisk 3D Llc | Carbon nano-film reversible resistance-switchable elements and methods of forming the same |
KR101435517B1 (ko) * | 2008-05-28 | 2014-08-29 | 삼성전자주식회사 | 광검출 분자를 이용한 이미지 센서 및 그 구동방법 |
US8569730B2 (en) * | 2008-07-08 | 2013-10-29 | Sandisk 3D Llc | Carbon-based interface layer for a memory device and methods of forming the same |
US8466044B2 (en) * | 2008-08-07 | 2013-06-18 | Sandisk 3D Llc | Memory cell that includes a carbon-based memory element and methods forming the same |
US8071972B2 (en) | 2008-10-20 | 2011-12-06 | The Regents Of The University Of Michigan | Silicon based nanoscale crossbar memory |
US20100108976A1 (en) * | 2008-10-30 | 2010-05-06 | Sandisk 3D Llc | Electronic devices including carbon-based films, and methods of forming such devices |
US8835892B2 (en) * | 2008-10-30 | 2014-09-16 | Sandisk 3D Llc | Electronic devices including carbon nano-tube films having boron nitride-based liners, and methods of forming the same |
US8421050B2 (en) * | 2008-10-30 | 2013-04-16 | Sandisk 3D Llc | Electronic devices including carbon nano-tube films having carbon-based liners, and methods of forming the same |
US8183121B2 (en) | 2009-03-31 | 2012-05-22 | Sandisk 3D Llc | Carbon-based films, and methods of forming the same, having dielectric filler material and exhibiting reduced thermal resistance |
US8519372B2 (en) | 2009-07-30 | 2013-08-27 | Hewlett-Packard Development Company, L.P. | Electroforming-free nanoscale switching device |
WO2011041772A2 (en) * | 2009-10-02 | 2011-04-07 | The University Of Memphis Research Foundation | Memory devices, methods of storing and reading data, smm junctions, and methods of preparing alumina substrates |
US8481396B2 (en) * | 2009-10-23 | 2013-07-09 | Sandisk 3D Llc | Memory cell that includes a carbon-based reversible resistance switching element compatible with a steering element, and methods of forming the same |
US8551855B2 (en) * | 2009-10-23 | 2013-10-08 | Sandisk 3D Llc | Memory cell that includes a carbon-based reversible resistance switching element compatible with a steering element, and methods of forming the same |
US20110156012A1 (en) * | 2009-11-12 | 2011-06-30 | Sony Corporation | Double layer hardmask for organic devices |
US8279665B2 (en) * | 2009-11-23 | 2012-10-02 | International Business Machines Corporation | Memory cell and select element |
US8551850B2 (en) * | 2009-12-07 | 2013-10-08 | Sandisk 3D Llc | Methods of forming a reversible resistance-switching metal-insulator-metal structure |
WO2011093887A1 (en) * | 2010-01-29 | 2011-08-04 | Hewlett-Packard Development Company, L.P. | Controlled switching memristor |
US8389375B2 (en) * | 2010-02-11 | 2013-03-05 | Sandisk 3D Llc | Memory cell formed using a recess and methods for forming the same |
US8416609B2 (en) | 2010-02-15 | 2013-04-09 | Micron Technology, Inc. | Cross-point memory cells, non-volatile memory arrays, methods of reading a memory cell, methods of programming a memory cell, methods of writing to and reading from a memory cell, and computer systems |
US8437174B2 (en) | 2010-02-15 | 2013-05-07 | Micron Technology, Inc. | Memcapacitor devices, field effect transistor devices, non-volatile memory arrays, and methods of programming |
US8237146B2 (en) * | 2010-02-24 | 2012-08-07 | Sandisk 3D Llc | Memory cell with silicon-containing carbon switching layer and methods for forming the same |
CN101807669A (zh) * | 2010-03-29 | 2010-08-18 | 南京大学 | 有机存储器 |
US8471360B2 (en) | 2010-04-14 | 2013-06-25 | Sandisk 3D Llc | Memory cell with carbon switching material having a reduced cross-sectional area and methods for forming the same |
WO2011136806A1 (en) * | 2010-04-30 | 2011-11-03 | Hewlett-Packard Development Company, L.P. | Ionic devices with interacting species |
CN105336365A (zh) * | 2010-05-11 | 2016-02-17 | 耶达研究及发展有限公司 | 固体多态分子随机访问存储器(ram) |
US8946046B1 (en) | 2012-05-02 | 2015-02-03 | Crossbar, Inc. | Guided path for forming a conductive filament in RRAM |
US9601692B1 (en) | 2010-07-13 | 2017-03-21 | Crossbar, Inc. | Hetero-switching layer in a RRAM device and method |
US9570678B1 (en) | 2010-06-08 | 2017-02-14 | Crossbar, Inc. | Resistive RAM with preferental filament formation region and methods |
US9012307B2 (en) | 2010-07-13 | 2015-04-21 | Crossbar, Inc. | Two terminal resistive switching device structure and method of fabricating |
CN103081093B (zh) | 2010-06-11 | 2015-06-03 | 科洛斯巴股份有限公司 | 存储器件的柱结构以及方法 |
US8441835B2 (en) | 2010-06-11 | 2013-05-14 | Crossbar, Inc. | Interface control for improved switching in RRAM |
US8374018B2 (en) | 2010-07-09 | 2013-02-12 | Crossbar, Inc. | Resistive memory using SiGe material |
US8884261B2 (en) | 2010-08-23 | 2014-11-11 | Crossbar, Inc. | Device switching using layered device structure |
US8168506B2 (en) | 2010-07-13 | 2012-05-01 | Crossbar, Inc. | On/off ratio for non-volatile memory device and method |
US8947908B2 (en) | 2010-11-04 | 2015-02-03 | Crossbar, Inc. | Hetero-switching layer in a RRAM device and method |
US8569172B1 (en) | 2012-08-14 | 2013-10-29 | Crossbar, Inc. | Noble metal/non-noble metal electrode for RRAM applications |
US8467227B1 (en) | 2010-11-04 | 2013-06-18 | Crossbar, Inc. | Hetero resistive switching material layer in RRAM device and method |
US8634224B2 (en) | 2010-08-12 | 2014-01-21 | Micron Technology, Inc. | Memory cells, non-volatile memory arrays, methods of operating memory cells, methods of writing to and reading from a memory cell, and methods of programming a memory cell |
EP2606530B1 (de) | 2010-08-20 | 2017-04-26 | Rhodia Operations | Polymerzusammensetzungen, polymerfilme, polymergele, polymerschaumstoffe und elektronische vorrichtungen mit solchen filmen; gelen und schaumstoffen |
US9401475B1 (en) | 2010-08-23 | 2016-07-26 | Crossbar, Inc. | Method for silver deposition for a non-volatile memory device |
US8492195B2 (en) | 2010-08-23 | 2013-07-23 | Crossbar, Inc. | Method for forming stackable non-volatile resistive switching memory devices |
US8404553B2 (en) | 2010-08-23 | 2013-03-26 | Crossbar, Inc. | Disturb-resistant non-volatile memory device and method |
US8889521B1 (en) | 2012-09-14 | 2014-11-18 | Crossbar, Inc. | Method for silver deposition for a non-volatile memory device |
US8391049B2 (en) | 2010-09-29 | 2013-03-05 | Crossbar, Inc. | Resistor structure for a non-volatile memory device and method |
US8558212B2 (en) | 2010-09-29 | 2013-10-15 | Crossbar, Inc. | Conductive path in switching material in a resistive random access memory device and control |
US8502185B2 (en) | 2011-05-31 | 2013-08-06 | Crossbar, Inc. | Switching device having a non-linear element |
USRE46335E1 (en) | 2010-11-04 | 2017-03-07 | Crossbar, Inc. | Switching device having a non-linear element |
US8088688B1 (en) | 2010-11-05 | 2012-01-03 | Crossbar, Inc. | p+ polysilicon material on aluminum for non-volatile memory device and method |
CN102130295A (zh) * | 2010-12-17 | 2011-07-20 | 天津理工大学 | 一种基于氧化钒薄膜的阻变存储器及其制备方法 |
US8930174B2 (en) | 2010-12-28 | 2015-01-06 | Crossbar, Inc. | Modeling technique for resistive random access memory (RRAM) cells |
US8815696B1 (en) | 2010-12-31 | 2014-08-26 | Crossbar, Inc. | Disturb-resistant non-volatile memory device using via-fill and etchback technique |
US8791010B1 (en) | 2010-12-31 | 2014-07-29 | Crossbar, Inc. | Silver interconnects for stacked non-volatile memory device and method |
US9153623B1 (en) | 2010-12-31 | 2015-10-06 | Crossbar, Inc. | Thin film transistor steering element for a non-volatile memory device |
GB2488583A (en) * | 2011-03-03 | 2012-09-05 | Nds Ltd | Preventing unauthorized access to data stored in non-volatile memories |
US8361651B2 (en) | 2011-04-29 | 2013-01-29 | Toyota Motor Engineering & Manufacturing North America, Inc. | Active material for rechargeable battery |
US8450710B2 (en) | 2011-05-27 | 2013-05-28 | Crossbar, Inc. | Low temperature p+ silicon junction material for a non-volatile memory device |
US9620206B2 (en) | 2011-05-31 | 2017-04-11 | Crossbar, Inc. | Memory array architecture with two-terminal memory cells |
US8394670B2 (en) | 2011-05-31 | 2013-03-12 | Crossbar, Inc. | Vertical diodes for non-volatile memory device |
US8619459B1 (en) | 2011-06-23 | 2013-12-31 | Crossbar, Inc. | High operating speed resistive random access memory |
US9627443B2 (en) | 2011-06-30 | 2017-04-18 | Crossbar, Inc. | Three-dimensional oblique two-terminal memory with enhanced electric field |
US8659929B2 (en) | 2011-06-30 | 2014-02-25 | Crossbar, Inc. | Amorphous silicon RRAM with non-linear device and operation |
US9166163B2 (en) | 2011-06-30 | 2015-10-20 | Crossbar, Inc. | Sub-oxide interface layer for two-terminal memory |
US9564587B1 (en) | 2011-06-30 | 2017-02-07 | Crossbar, Inc. | Three-dimensional two-terminal memory with enhanced electric field and segmented interconnects |
US8946669B1 (en) | 2012-04-05 | 2015-02-03 | Crossbar, Inc. | Resistive memory device and fabrication methods |
CN103828047A (zh) | 2011-07-22 | 2014-05-28 | 科洛斯巴股份有限公司 | 用于非易失性存储器装置的p+硅锗材料的种子层及方法 |
US10056907B1 (en) | 2011-07-29 | 2018-08-21 | Crossbar, Inc. | Field programmable gate array utilizing two-terminal non-volatile memory |
US9729155B2 (en) | 2011-07-29 | 2017-08-08 | Crossbar, Inc. | Field programmable gate array utilizing two-terminal non-volatile memory |
US8674724B2 (en) | 2011-07-29 | 2014-03-18 | Crossbar, Inc. | Field programmable gate array utilizing two-terminal non-volatile memory |
KR20130022819A (ko) * | 2011-08-26 | 2013-03-07 | 한양대학교 산학협력단 | 버퍼층을 포함하는 비휘발성 고분자 기억 소자 및 그의 제조 방법 |
CN103208514B (zh) * | 2012-01-14 | 2017-05-17 | 盛况 | 一种含有金属的半导体装置及其制备方法 |
US9653159B2 (en) * | 2012-01-18 | 2017-05-16 | Xerox Corporation | Memory device based on conductance switching in polymer/electrolyte junctions |
US8716098B1 (en) | 2012-03-09 | 2014-05-06 | Crossbar, Inc. | Selective removal method and structure of silver in resistive switching device for a non-volatile memory device |
US9087576B1 (en) | 2012-03-29 | 2015-07-21 | Crossbar, Inc. | Low temperature fabrication method for a three-dimensional memory device and structure |
US9685608B2 (en) | 2012-04-13 | 2017-06-20 | Crossbar, Inc. | Reduced diffusion in metal electrode for two-terminal memory |
US8658476B1 (en) | 2012-04-20 | 2014-02-25 | Crossbar, Inc. | Low temperature P+ polycrystalline silicon material for non-volatile memory device |
US8796658B1 (en) | 2012-05-07 | 2014-08-05 | Crossbar, Inc. | Filamentary based non-volatile resistive memory device and method |
US8765566B2 (en) | 2012-05-10 | 2014-07-01 | Crossbar, Inc. | Line and space architecture for a non-volatile memory device |
US8673493B2 (en) | 2012-05-29 | 2014-03-18 | Toyota Motor Engineering & Manufacturing North America, Inc. | Indium-tin binary anodes for rechargeable magnesium-ion batteries |
US8647770B2 (en) | 2012-05-30 | 2014-02-11 | Toyota Motor Engineering & Manufacturing North America, Inc. | Bismuth-tin binary anodes for rechargeable magnesium-ion batteries |
WO2014009952A2 (en) | 2012-07-09 | 2014-01-16 | Yeda Research And Development Co. Ltd | Logic circuits with plug and play solid-state molecular chips |
US9583701B1 (en) | 2012-08-14 | 2017-02-28 | Crossbar, Inc. | Methods for fabricating resistive memory device switching material using ion implantation |
US10096653B2 (en) | 2012-08-14 | 2018-10-09 | Crossbar, Inc. | Monolithically integrated resistive memory using integrated-circuit foundry compatible processes |
US8946673B1 (en) | 2012-08-24 | 2015-02-03 | Crossbar, Inc. | Resistive switching device structure with improved data retention for non-volatile memory device and method |
US9312483B2 (en) | 2012-09-24 | 2016-04-12 | Crossbar, Inc. | Electrode structure for a non-volatile memory device and method |
US9576616B2 (en) | 2012-10-10 | 2017-02-21 | Crossbar, Inc. | Non-volatile memory with overwrite capability and low write amplification |
US11068620B2 (en) | 2012-11-09 | 2021-07-20 | Crossbar, Inc. | Secure circuit integrated with memory layer |
US8982647B2 (en) | 2012-11-14 | 2015-03-17 | Crossbar, Inc. | Resistive random access memory equalization and sensing |
US9412790B1 (en) | 2012-12-04 | 2016-08-09 | Crossbar, Inc. | Scalable RRAM device architecture for a non-volatile memory device and method |
US9406379B2 (en) | 2013-01-03 | 2016-08-02 | Crossbar, Inc. | Resistive random access memory with non-linear current-voltage relationship |
CN103078055B (zh) * | 2013-01-04 | 2015-06-03 | 华中科技大学 | 一种模拟生物神经突触的单元、装置及方法 |
US9324942B1 (en) | 2013-01-31 | 2016-04-26 | Crossbar, Inc. | Resistive memory cell with solid state diode |
US9112145B1 (en) | 2013-01-31 | 2015-08-18 | Crossbar, Inc. | Rectified switching of two-terminal memory via real time filament formation |
US8934280B1 (en) | 2013-02-06 | 2015-01-13 | Crossbar, Inc. | Capacitive discharge programming for two-terminal memory cells |
US9130157B2 (en) | 2013-07-26 | 2015-09-08 | Micron Technology, Inc. | Memory cells having a number of conductive diffusion barrier materials and manufacturing methods |
CN104518083B (zh) * | 2013-09-26 | 2017-03-15 | 中国科学院宁波材料技术与工程研究所 | 一种电阻型随机存储器的存储单元及其制备方法 |
IL229525A0 (en) | 2013-11-20 | 2014-01-30 | Yeda Res & Dev | Metal complexes of tris-bipyridyl and their uses in electrochromic applications |
US10290801B2 (en) | 2014-02-07 | 2019-05-14 | Crossbar, Inc. | Scalable silicon based resistive memory device |
US20170047513A1 (en) * | 2014-04-21 | 2017-02-16 | University Of Washington | Proton resistive memory devices and methods |
DE102015000120A1 (de) * | 2015-01-07 | 2016-07-07 | Merck Patent Gmbh | Elektronisches Bauelement |
WO2016152492A1 (ja) * | 2015-03-26 | 2016-09-29 | 富士フイルム株式会社 | マトリクス装置およびマトリクス装置の製造方法 |
CN104894530B (zh) * | 2015-06-09 | 2018-02-02 | 国家纳米科学中心 | 一种二维过渡金属硫族化物薄膜及其制备方法和应用 |
US10483462B1 (en) * | 2015-06-17 | 2019-11-19 | Crossbar, Inc. | Formation of structurally robust nanoscale Ag-based conductive structure |
WO2017052546A1 (en) * | 2015-09-24 | 2017-03-30 | Hewlett Packard Enterprise Development Lp | Selector with porous oxide layer |
DE102016003461A1 (de) * | 2016-03-23 | 2017-09-28 | Forschungszentrum Jülich GmbH | Verfahren zur Herstellung eines Speichers, Speicher, sowie Verwendung des Speichers |
CN105932154B (zh) * | 2016-05-17 | 2018-10-09 | 浙江师范大学 | 具有稳定阈值电阻转变特性的材料以及动态随机存储器件 |
WO2018053707A1 (en) * | 2016-09-21 | 2018-03-29 | Boe Technology Group Co., Ltd. | Thin film transistor, display substrate and display panel having the same, and fabricating method thereof |
US10352971B2 (en) * | 2016-09-30 | 2019-07-16 | Arm Ltd. | Voltage detection with correlated electron switch |
US9947379B1 (en) | 2016-10-06 | 2018-04-17 | National Technology & Engineering Solutions Of Sandia, Llc | Device and methods for writing and erasing analog information in small memory units via voltage pulses |
GB201620835D0 (en) | 2016-12-07 | 2017-01-18 | Australian Advanced Mat Pty Ltd | Resistive switching memory |
US10164179B2 (en) * | 2017-01-13 | 2018-12-25 | International Business Machines Corporation | Memristive device based on alkali-doping of transitional metal oxides |
US10429343B1 (en) | 2017-02-09 | 2019-10-01 | National Technology & Engineering Solutions Of Sandia, Llc | Tunable ionic electronic transistor |
US10229736B2 (en) * | 2017-06-22 | 2019-03-12 | International Business Machines Corporation | Memristive device based on reversible intercalated ion transfer between two meta-stable phases |
CN109957194A (zh) * | 2017-12-14 | 2019-07-02 | 中国科学院深圳先进技术研究院 | 一种复合薄膜及其制作方法 |
US10586591B2 (en) | 2018-01-08 | 2020-03-10 | International Business Machines Corporation | High speed thin film two terminal resistive memory |
US10777267B2 (en) | 2018-01-08 | 2020-09-15 | International Business Machines Corporation | High speed thin film two terminal resistive memory |
US10700093B1 (en) | 2018-12-20 | 2020-06-30 | Sandisk Technologies Llc | Ferroelectric memory devices employing conductivity modulation of a thin semiconductor material or a two-dimensional charge carrier gas and methods of operating the same |
US11177284B2 (en) | 2018-12-20 | 2021-11-16 | Sandisk Technologies Llc | Ferroelectric memory devices containing a two-dimensional charge carrier gas channel and methods of making the same |
US11455521B2 (en) | 2019-03-01 | 2022-09-27 | International Business Machines Corporation | Neuromorphic device driven by copper ion intercalation |
CN110224064B (zh) * | 2019-06-26 | 2020-10-27 | 西安交通大学 | 一种基于BN(Al)薄膜的电阻开关及制备方法 |
US11222920B2 (en) | 2020-02-04 | 2022-01-11 | Western Digital Technologies, Inc. | Magnetic device including multiferroic regions and methods of forming the same |
US11107516B1 (en) | 2020-02-24 | 2021-08-31 | Sandisk Technologies Llc | Ferroelectric memory devices containing a two-dimensional charge carrier gas channel and methods of making the same |
US11264562B1 (en) | 2020-08-27 | 2022-03-01 | Western Digital Technologies, Inc. | Multiferroic-assisted voltage controlled magnetic anisotropy memory device and methods of manufacturing the same |
US11276446B1 (en) | 2020-08-27 | 2022-03-15 | Western Digital Technologies, Inc. | Multiferroic-assisted voltage controlled magnetic anisotropy memory device and methods of manufacturing the same |
TWI775427B (zh) | 2021-05-07 | 2022-08-21 | 財團法人工業技術研究院 | 鐵電記憶體 |
JP2023081627A (ja) * | 2021-12-01 | 2023-06-13 | キオクシア株式会社 | 有機分子メモリ |
Family Cites Families (136)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5012598B1 (de) | 1970-04-02 | 1975-05-13 | ||
US3810127A (en) | 1970-06-23 | 1974-05-07 | Intel Corp | Programmable circuit {13 {11 the method of programming thereof and the devices so programmed |
US4146876A (en) * | 1977-06-29 | 1979-03-27 | International Business Machines Corporation | Matrix addressed electrochromic display |
JPS5589980A (en) | 1978-11-27 | 1980-07-08 | Nec Corp | Semiconductor memory unit |
US4267558A (en) | 1979-01-05 | 1981-05-12 | Texas Instruments Incorporated | Electrically erasable memory with self-limiting erase |
US4371883A (en) | 1980-03-14 | 1983-02-01 | The Johns Hopkins University | Current controlled bistable electrical organic thin film switching device |
US4652894A (en) * | 1980-03-14 | 1987-03-24 | The Johns Hopkins University | Electrical organic thin film switching device switching between detectably different oxidation states |
JPS5864068A (ja) | 1981-10-14 | 1983-04-16 | Agency Of Ind Science & Technol | 不揮発性半導体メモリの書き込み方法 |
US4677742A (en) | 1983-01-18 | 1987-07-07 | Energy Conversion Devices, Inc. | Electronic matrix arrays and method for making the same |
US4663270A (en) * | 1984-04-25 | 1987-05-05 | The Johns Hopkins University | Multistate optical switching and memory using an amphoteric organic charge transfer material |
GB2160049B (en) | 1984-05-28 | 1987-06-03 | Suwa Seikosha Kk | A non-volatile memory circuit |
US5034192A (en) * | 1984-11-23 | 1991-07-23 | Massachusetts Institute Of Technology | Molecule-based microelectronic devices |
US4631562A (en) | 1985-05-31 | 1986-12-23 | Rca Corporation | Zener diode structure |
DE3602887A1 (de) | 1986-01-31 | 1987-08-06 | Bayer Ag | Nichtfluechtiger elektronischer speicher |
US4727514A (en) | 1986-02-11 | 1988-02-23 | Texas Instruments Incorporated | Programmable memory with memory cells programmed by addressing |
US4834911A (en) | 1986-08-25 | 1989-05-30 | Electro-Organic Company | Intrinsically conductive and semiconductive polymers, products formed with such polymers and methods of forming same |
DE3751376T2 (de) | 1986-10-13 | 1995-11-16 | Canon Kk | Schaltungselement. |
FR2618570B1 (fr) * | 1987-07-24 | 1990-10-19 | Warszawski Bernard | Procede de modulation de la lumiere |
JPH01100788A (ja) | 1987-10-13 | 1989-04-19 | Hitachi Ltd | 半導体集積回路装置 |
JPH01103137A (ja) * | 1987-10-15 | 1989-04-20 | Mitsubishi Electric Corp | 電動機 |
US4839700A (en) | 1987-12-16 | 1989-06-13 | California Institute Of Technology | Solid-state non-volatile electronically programmable reversible variable resistance device |
US5440518A (en) | 1991-06-12 | 1995-08-08 | Hazani; Emanuel | Non-volatile memory circuits, architecture and methods |
US5136212A (en) | 1988-02-18 | 1992-08-04 | Canon Kabushiki Kaisha | Electron emitting device, electron generator employing said electron emitting device, and method for driving said generator |
JP3153537B2 (ja) * | 1988-03-29 | 2001-04-09 | 株式会社東芝 | 有機薄模素子 |
JPH0260166A (ja) * | 1988-08-26 | 1990-02-28 | Nippon Telegr & Teleph Corp <Ntt> | フルバレン類薄膜を用いたメモリー素子 |
US5196912A (en) | 1988-10-28 | 1993-03-23 | Casio Computer Co., Ltd. | Thin film transistor having memory function and method for using thin film transistor as memory element |
US5892244A (en) * | 1989-01-10 | 1999-04-06 | Mitsubishi Denki Kabushiki Kaisha | Field effect transistor including πconjugate polymer and liquid crystal display including the field effect transistor |
JP2636035B2 (ja) | 1989-02-27 | 1997-07-30 | 松下電器産業株式会社 | 強誘電性液晶組成物および強誘電性液晶表示装置 |
EP0418504B1 (de) | 1989-07-25 | 1995-04-05 | Matsushita Electric Industrial Co., Ltd. | Speicherbauelement aus organischem Halbleiter mit einer MISFET-Struktur und sein Kontrollverfahren |
JPH03104281A (ja) * | 1989-09-19 | 1991-05-01 | Toshiba Corp | 有機薄膜素子 |
US5206525A (en) | 1989-12-27 | 1993-04-27 | Nippon Petrochemicals Co., Ltd. | Electric element capable of controlling the electric conductivity of π-conjugated macromolecular materials |
JP3169618B2 (ja) * | 1989-12-27 | 2001-05-28 | 日本石油化学株式会社 | 電気素子 |
US5272101A (en) | 1990-04-12 | 1993-12-21 | Actel Corporation | Electrically programmable antifuse and fabrication processes |
US5552627A (en) | 1990-04-12 | 1996-09-03 | Actel Corporation | Electrically programmable antifuse incorporating dielectric and amorphous silicon interlayers |
US5130380A (en) | 1990-05-29 | 1992-07-14 | Carew Evan B | Conductive polymers |
JPH0770731B2 (ja) | 1990-11-22 | 1995-07-31 | 松下電器産業株式会社 | 電気可塑性素子 |
US5245543A (en) | 1990-12-21 | 1993-09-14 | Texas Instruments Incorporated | Method and apparatus for integrated circuit design |
US5296716A (en) | 1991-01-18 | 1994-03-22 | Energy Conversion Devices, Inc. | Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom |
FR2672158B1 (fr) | 1991-01-24 | 1993-04-09 | Commissariat Energie Atomique | Capteur pour la detection d'especes chimiques ou de photons utilisant un transistor a effet de champ. |
JP3224829B2 (ja) | 1991-08-15 | 2001-11-05 | 株式会社東芝 | 有機電界効果型素子 |
GB9117680D0 (en) | 1991-08-16 | 1991-10-02 | Philips Electronic Associated | Electronic matrix array devices |
EP0601068B1 (de) | 1991-08-19 | 2002-10-16 | Energy Conversion Devices, Inc. | Elektronisch löschbare, direkt überschreibbare multibit-einzelzellen-speicherelemente und aus diesen hergestellte anordnungen |
US5563081A (en) | 1992-03-23 | 1996-10-08 | Rohm Co., Inc. | Method for making a nonvolatile memory device utilizing a field effect transistor having a ferroelectric gate film |
US6320200B1 (en) * | 1992-06-01 | 2001-11-20 | Yale University | Sub-nanoscale electronic devices and processes |
US5475341A (en) * | 1992-06-01 | 1995-12-12 | Yale University | Sub-nanoscale electronic systems and devices |
JP2822791B2 (ja) | 1992-06-30 | 1998-11-11 | 日本電気株式会社 | 半導体装置 |
JPH0628841A (ja) * | 1992-07-08 | 1994-02-04 | Makoto Yano | 化学反応を利用した記憶素子 |
RU2071126C1 (ru) | 1992-08-27 | 1996-12-27 | Кригер Юрий Генрихович | Запоминающий элемент |
US5579199A (en) | 1992-11-26 | 1996-11-26 | Sharp Kabushiki Kaisha | Non-volatile memory device and a method for producing the same |
US5581111A (en) | 1993-07-07 | 1996-12-03 | Actel Corporation | Dielectric-polysilicon-dielectric antifuse for field programmable logic applications |
US5818749A (en) | 1993-08-20 | 1998-10-06 | Micron Technology, Inc. | Integrated circuit memory device |
JPH07106440A (ja) | 1993-10-04 | 1995-04-21 | Hitachi Ltd | 不揮発性半導体記憶装置及びそれを用いた応用システム |
JP3467858B2 (ja) | 1993-11-02 | 2003-11-17 | ソニー株式会社 | 光電変換素子 |
JP2692591B2 (ja) * | 1994-06-30 | 1997-12-17 | 株式会社日立製作所 | 光メモリ素子及びそれを用いた光回路 |
JP4278721B2 (ja) | 1994-09-30 | 2009-06-17 | テキサス インスツルメンツ インコーポレイテツド | 高い逆降伏電圧を有するツェナーダイオード |
JPH08222648A (ja) | 1995-02-14 | 1996-08-30 | Canon Inc | 記憶装置 |
US5572472A (en) | 1995-04-14 | 1996-11-05 | Delco Electronics Corporation | Integrated zener-zap nonvolatile memory cell with programming and pretest capability |
NO952545D0 (no) | 1995-06-23 | 1995-06-23 | Opticon As | Fremgangsmåte til skriving av data i et optisk minne |
US5691935A (en) | 1995-07-13 | 1997-11-25 | Douglass; Barry G. | Memory element and method of operation thereof |
US5849403A (en) * | 1995-09-13 | 1998-12-15 | Kabushiki Kaisha Toshiba | Organic thin film device |
DE69515876T2 (de) | 1995-11-06 | 2000-08-17 | St Microelectronics Srl | Leistungsbauelement in MOS-Technologie mit niedrigem Ausgangswiderstand und geringer Kapazität und dessen Herstellungsverfahren |
DE69723625T2 (de) * | 1996-02-16 | 2004-04-22 | Koninklijke Philips Electronics N.V. | Einmal beschreibbares, mehrmals lesbares elektrisches speicherelement aus konjugiertem polymer oder oligomer |
JPH09232526A (ja) * | 1996-02-27 | 1997-09-05 | Mitsubishi Chem Corp | 光情報処理素子 |
US5841180A (en) * | 1996-03-27 | 1998-11-24 | Canon Kabushiki Kaisha | Photoelectric conversion device, method of driving photoelectric conversion device, and system having the device |
US5761115A (en) | 1996-05-30 | 1998-06-02 | Axon Technologies Corporation | Programmable metallization cell structure and method of making same |
US5734605A (en) | 1996-09-10 | 1998-03-31 | Motorola, Inc. | Multi-layer magnetic tunneling junction memory cells |
DE19640239A1 (de) | 1996-09-30 | 1998-04-02 | Siemens Ag | Speicherzelle mit Polymerkondensator |
US5761116A (en) * | 1996-10-07 | 1998-06-02 | Advanced Micro Devices, Inc. | Vpp only scalable EEPROM memory cell having transistors with thin tunnel gate oxide |
JP3349638B2 (ja) | 1996-11-15 | 2002-11-25 | シャープ株式会社 | 表示装置を駆動する方法および回路 |
US6461916B1 (en) | 1997-03-28 | 2002-10-08 | Hitachi, Ltd. | Non-volatile semiconductor memory and method of making same, and semiconductor device and method of making the device |
US5942775A (en) * | 1997-04-30 | 1999-08-24 | Lucent Technologies Inc. | Photosensing device with improved spectral response and low thermal leakage |
NO972803D0 (no) * | 1997-06-17 | 1997-06-17 | Opticom As | Elektrisk adresserbar logisk innretning, fremgangsmåte til elektrisk adressering av samme og anvendelse av innretning og fremgangsmåte |
IL121312A (en) | 1997-07-14 | 2001-09-13 | Technion Res & Dev Foundation | Microelectronic components, their manufacture and electronic networks containing them |
NO304956B1 (no) | 1997-07-22 | 1999-03-08 | Opticom As | Elektrodeanordning uten og med et funksjonselement, samt en elektrodeinnretning dannet av elektrodeanordninger med funksjonselement og anvendelser derav |
NO973993L (no) | 1997-09-01 | 1999-03-02 | Opticom As | Leseminne og leseminneinnretninger |
SG77608A1 (en) | 1997-10-03 | 2001-01-16 | Inst Data Storage | Improvements relating to optical memories using electron trapping material |
AU9451098A (en) | 1997-10-14 | 1999-05-03 | Patterning Technologies Limited | Method of forming an electronic device |
JP3636579B2 (ja) * | 1997-11-04 | 2005-04-06 | キヤノン株式会社 | 光電変換装置、光電変換装置の駆動方法及びその光電変換装置を有するシステム |
US6169686B1 (en) * | 1997-11-20 | 2001-01-02 | Hewlett-Packard Company | Solid-state memory with magnetic storage cells |
WO1999028914A2 (en) | 1997-12-04 | 1999-06-10 | Axon Technologies Corporation | Programmable sub-surface aggregating metallization structure and method of making same |
NO306529B1 (no) | 1998-01-16 | 1999-11-15 | Opticom As | Transistor |
EP1051741A1 (de) * | 1998-01-28 | 2000-11-15 | Opticom ASA | Herstellung und zerstörung dreidimensionaler, leitender oder halbleitender strukturen |
JPH11214640A (ja) * | 1998-01-28 | 1999-08-06 | Hitachi Ltd | 半導体記憶素子、半導体記憶装置とその制御方法 |
US6064589A (en) | 1998-02-02 | 2000-05-16 | Walker; Darryl G. | Double gate DRAM memory cell |
JPH11312393A (ja) | 1998-02-19 | 1999-11-09 | Sanyo Electric Co Ltd | 半導体メモリ装置の書き込み回路 |
US6069820A (en) * | 1998-02-20 | 2000-05-30 | Kabushiki Kaisha Toshiba | Spin dependent conduction device |
US6348700B1 (en) * | 1998-10-27 | 2002-02-19 | The Mitre Corporation | Monomolecular rectifying wire and logic based thereupon |
GB2343308B (en) | 1998-10-30 | 2000-10-11 | Nikolai Franz Gregor Schwabe | Magnetic storage device |
JP2000164361A (ja) * | 1998-11-25 | 2000-06-16 | Tdk Corp | 有機el素子 |
US6487106B1 (en) | 1999-01-12 | 2002-11-26 | Arizona Board Of Regents | Programmable microelectronic devices and method of forming and programming same |
US6232626B1 (en) * | 1999-02-01 | 2001-05-15 | Micron Technology, Inc. | Trench photosensor for a CMOS imager |
CN1175423C (zh) | 1999-02-11 | 2004-11-10 | 亚利桑那州立大学董事会 | 微电子可编程结构及其形成与编程方法 |
AU1887000A (en) | 1999-02-17 | 2000-09-04 | International Business Machines Corporation | Microelectronic device for storing information and method thereof |
JP2000268969A (ja) * | 1999-03-17 | 2000-09-29 | Tdk Corp | 有機el素子 |
JP2000268973A (ja) * | 1999-03-17 | 2000-09-29 | Tdk Corp | 有機el素子 |
US6128214A (en) | 1999-03-29 | 2000-10-03 | Hewlett-Packard | Molecular wire crossbar memory |
US6459095B1 (en) | 1999-03-29 | 2002-10-01 | Hewlett-Packard Company | Chemically synthesized and assembled electronics devices |
US6314019B1 (en) * | 1999-03-29 | 2001-11-06 | Hewlett-Packard Company | Molecular-wire crossbar interconnect (MWCI) for signal routing and communications |
FR2792761B1 (fr) | 1999-04-21 | 2003-05-23 | St Microelectronics Sa | Dispositif de programmation d'une memoire non volatile electriquement programmable |
US6208553B1 (en) * | 1999-07-01 | 2001-03-27 | The Regents Of The University Of California | High density non-volatile memory device incorporating thiol-derivatized porphyrins |
US6381169B1 (en) * | 1999-07-01 | 2002-04-30 | The Regents Of The University Of California | High density non-volatile memory device |
US6324091B1 (en) * | 2000-01-14 | 2001-11-27 | The Regents Of The University Of California | Tightly coupled porphyrin macrocycles for molecular memory storage |
JP4491870B2 (ja) | 1999-10-27 | 2010-06-30 | ソニー株式会社 | 不揮発性メモリの駆動方法 |
US6384427B1 (en) | 1999-10-29 | 2002-05-07 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device |
DE19959904C2 (de) | 1999-12-11 | 2002-03-14 | Edward William Schlag | Verfahren und Vorrichtung zum Steuern eines elektrischen Stromes durch Biomoleküle |
US6272038B1 (en) * | 2000-01-14 | 2001-08-07 | North Carolina State University | High-density non-volatile memory devices incorporating thiol-derivatized porphyrin trimers |
US6212093B1 (en) * | 2000-01-14 | 2001-04-03 | North Carolina State University | High-density non-volatile memory devices incorporating sandwich coordination compounds |
NO315728B1 (no) | 2000-03-22 | 2003-10-13 | Thin Film Electronics Asa | Multidimensjonal adresseringsarkitektur for elektroniske innretninger |
US6449184B2 (en) | 2000-06-19 | 2002-09-10 | Matsushita Electric Industrial Co., Ltd. | Method for driving semiconductor memory |
US6403397B1 (en) | 2000-06-28 | 2002-06-11 | Agere Systems Guardian Corp. | Process for fabricating organic semiconductor device involving selective patterning |
US6611037B1 (en) * | 2000-08-28 | 2003-08-26 | Micron Technology, Inc. | Multi-trench region for accumulation of photo-generated charge in a CMOS imager |
AU2002227138A1 (en) | 2000-10-24 | 2002-05-06 | Molecular Electronics Corporation | Three-terminal field-controlled molecular devices |
EP1344223A4 (de) * | 2000-10-31 | 2005-05-25 | Univ California | Organisches bistabildes bauelement und organische speicherzellen |
NO20005980L (no) | 2000-11-27 | 2002-05-28 | Thin Film Electronics Ab | Ferroelektrisk minnekrets og fremgangsmåte ved dens fremstilling |
JP4667594B2 (ja) | 2000-12-25 | 2011-04-13 | ルネサスエレクトロニクス株式会社 | 薄膜磁性体記憶装置 |
US6407953B1 (en) | 2001-02-02 | 2002-06-18 | Matrix Semiconductor, Inc. | Memory array organization and related test method particularly well suited for integrated circuits having write-once memory arrays |
US6618295B2 (en) | 2001-03-21 | 2003-09-09 | Matrix Semiconductor, Inc. | Method and apparatus for biasing selected and unselected array lines when writing a memory array |
WO2002091496A2 (en) | 2001-05-07 | 2002-11-14 | Advanced Micro Devices, Inc. | Reversible field-programmable electric interconnects |
JP4731794B2 (ja) | 2001-05-07 | 2011-07-27 | アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド | メモリ効果を有するスイッチ素子及び該素子をスイッチングさせる方法 |
CN100403450C (zh) | 2001-05-07 | 2008-07-16 | 先进微装置公司 | 具有自组装聚合物薄膜的内存装置及其制造方法 |
US6781868B2 (en) * | 2001-05-07 | 2004-08-24 | Advanced Micro Devices, Inc. | Molecular memory device |
US6873540B2 (en) | 2001-05-07 | 2005-03-29 | Advanced Micro Devices, Inc. | Molecular memory cell |
DE60233486D1 (de) | 2001-05-07 | 2009-10-08 | Advanced Micro Devices Inc | Floating-gate-speicherbaustein, der zusammengesetztes molekularmaterial verwendet |
CN1507669A (zh) * | 2001-05-10 | 2004-06-23 | �����֯��ʽ���� | 非水电解液,用于聚合物凝胶电解质的组合物,聚合物凝胶电解质,二次电池,和双层电容器 |
US6838720B2 (en) * | 2001-08-13 | 2005-01-04 | Advanced Micro Devices, Inc. | Memory device with active passive layers |
US6806526B2 (en) * | 2001-08-13 | 2004-10-19 | Advanced Micro Devices, Inc. | Memory device |
US6858481B2 (en) * | 2001-08-13 | 2005-02-22 | Advanced Micro Devices, Inc. | Memory device with active and passive layers |
CN100419906C (zh) | 2001-08-13 | 2008-09-17 | 先进微装置公司 | 存储器单元 |
US6768157B2 (en) * | 2001-08-13 | 2004-07-27 | Advanced Micro Devices, Inc. | Memory device |
US6462365B1 (en) * | 2001-11-06 | 2002-10-08 | Omnivision Technologies, Inc. | Active pixel having reduced dark current in a CMOS image sensor |
US6885573B2 (en) * | 2002-03-15 | 2005-04-26 | Hewlett-Packard Development Company, L.P. | Diode for use in MRAM devices and method of manufacture |
US6900488B1 (en) * | 2002-10-31 | 2005-05-31 | Advanced Micro Devices, Inc. | Multi-cell organic memory element and methods of operating and fabricating |
US6870183B2 (en) * | 2002-11-04 | 2005-03-22 | Advanced Micro Devices, Inc. | Stacked organic memory devices and methods of operating and fabricating |
US6873543B2 (en) * | 2003-05-30 | 2005-03-29 | Hewlett-Packard Development Company, L.P. | Memory device |
US6839275B2 (en) * | 2003-06-04 | 2005-01-04 | Hewlett-Packard Development Company, L.P. | Memory system having control circuit configured to receive data, provide encoded received data to match a fault pattern in the array of memory cells |
CA2500938A1 (en) * | 2004-03-24 | 2005-09-24 | Rohm And Haas Company | Memory devices based on electric field programmable films |
-
2001
- 2001-08-13 CN CNB018235379A patent/CN100419906C/zh not_active Expired - Lifetime
- 2001-08-13 US US10/486,864 patent/US6992323B2/en not_active Expired - Lifetime
- 2001-08-13 DE DE60130586T patent/DE60130586T2/de not_active Expired - Lifetime
- 2001-08-13 JP JP2003522101A patent/JP2005500682A/ja active Pending
- 2001-08-13 KR KR1020047002228A patent/KR100860134B1/ko active IP Right Grant
- 2001-08-13 WO PCT/RU2001/000334 patent/WO2003017282A1/ru active IP Right Grant
- 2001-08-13 BR BR0117103-8A patent/BR0117103A/pt not_active Application Discontinuation
- 2001-08-13 EP EP01274446A patent/EP1434232B1/de not_active Expired - Lifetime
-
2002
- 2002-09-11 US US10/238,880 patent/US6815286B2/en not_active Expired - Lifetime
-
2003
- 2003-04-15 US US10/414,353 patent/US6864522B2/en not_active Expired - Lifetime
-
2004
- 2004-02-11 US US10/776,870 patent/US7254053B2/en not_active Expired - Fee Related
- 2004-02-11 US US10/776,850 patent/US7026702B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN1543652A (zh) | 2004-11-03 |
US20040246768A1 (en) | 2004-12-09 |
US20040160801A1 (en) | 2004-08-19 |
DE60130586T2 (de) | 2008-06-19 |
JP2005500682A (ja) | 2005-01-06 |
US20030179633A1 (en) | 2003-09-25 |
US6992323B2 (en) | 2006-01-31 |
US6864522B2 (en) | 2005-03-08 |
BR0117103A (pt) | 2004-08-10 |
US20040159835A1 (en) | 2004-08-19 |
US7026702B2 (en) | 2006-04-11 |
US20030053350A1 (en) | 2003-03-20 |
EP1434232B1 (de) | 2007-09-19 |
KR20040035734A (ko) | 2004-04-29 |
US6815286B2 (en) | 2004-11-09 |
US7254053B2 (en) | 2007-08-07 |
CN100419906C (zh) | 2008-09-17 |
EP1434232A1 (de) | 2004-06-30 |
EP1434232A4 (de) | 2005-09-07 |
KR100860134B1 (ko) | 2008-09-25 |
WO2003017282A1 (fr) | 2003-02-27 |
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