AU2002227138A1 - Three-terminal field-controlled molecular devices - Google Patents

Three-terminal field-controlled molecular devices

Info

Publication number
AU2002227138A1
AU2002227138A1 AU2002227138A AU2713802A AU2002227138A1 AU 2002227138 A1 AU2002227138 A1 AU 2002227138A1 AU 2002227138 A AU2002227138 A AU 2002227138A AU 2713802 A AU2713802 A AU 2713802A AU 2002227138 A1 AU2002227138 A1 AU 2002227138A1
Authority
AU
Australia
Prior art keywords
molecular devices
controlled molecular
terminal field
terminal
controlled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002227138A
Inventor
Theresa Mayer
James M Tour
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Molecular Electronics Corp
Original Assignee
Molecular Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Molecular Electronics Corp filed Critical Molecular Electronics Corp
Publication of AU2002227138A1 publication Critical patent/AU2002227138A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G11C13/0016—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material comprising polymers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/701—Organic molecular electronic devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/202—Integrated devices comprising a common active layer
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/10—Resistive cells; Technology aspects
    • G11C2213/14—Use of different molecule structures as storage states, e.g. part of molecule being rotated
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/81—Array wherein the array conductors, e.g. word lines, bit lines, are made of nanowires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
AU2002227138A 2000-10-24 2001-10-24 Three-terminal field-controlled molecular devices Abandoned AU2002227138A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US24286500P 2000-10-24 2000-10-24
US60/242,865 2000-10-24
PCT/US2001/045588 WO2002035580A2 (en) 2000-10-24 2001-10-24 Three-terminal field-controlled molecular devices

Publications (1)

Publication Number Publication Date
AU2002227138A1 true AU2002227138A1 (en) 2002-05-06

Family

ID=22916458

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002227138A Abandoned AU2002227138A1 (en) 2000-10-24 2001-10-24 Three-terminal field-controlled molecular devices

Country Status (3)

Country Link
US (1) US20050101063A1 (en)
AU (1) AU2002227138A1 (en)
WO (1) WO2002035580A2 (en)

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US6627944B2 (en) 2001-05-07 2003-09-30 Advanced Micro Devices, Inc. Floating gate memory device using composite molecular material
EP1388179A1 (en) 2001-05-07 2004-02-11 Advanced Micro Devices, Inc. Switching element having memory effect
US6781868B2 (en) 2001-05-07 2004-08-24 Advanced Micro Devices, Inc. Molecular memory device
US6844608B2 (en) 2001-05-07 2005-01-18 Advanced Micro Devices, Inc. Reversible field-programmable electric interconnects
US6768157B2 (en) 2001-08-13 2004-07-27 Advanced Micro Devices, Inc. Memory device
US6806526B2 (en) 2001-08-13 2004-10-19 Advanced Micro Devices, Inc. Memory device
EP1434232B1 (en) 2001-08-13 2007-09-19 Advanced Micro Devices, Inc. Memory cell
US6674121B2 (en) * 2001-12-14 2004-01-06 The Regents Of The University Of California Method and system for molecular charge storage field effect transistor
US6949206B2 (en) * 2002-09-05 2005-09-27 Nanosys, Inc. Organic species that facilitate charge transfer to or from nanostructures
US20040138467A1 (en) * 2002-11-26 2004-07-15 French Roger Harquail Aromatic and aromatic/heteroaromatic molecular structures with controllable electron conducting properties
WO2004050231A2 (en) * 2002-11-29 2004-06-17 Aarhus Universitet (bio) organic oligomers for the preparation of macromolecules
JP4755827B2 (en) * 2002-12-18 2011-08-24 インターナショナル・ビジネス・マシーンズ・コーポレーション Circuits and self-organized structures
JP2004302845A (en) * 2003-03-31 2004-10-28 Canon Inc Illegal access preventing method
DE10324388A1 (en) * 2003-05-28 2004-12-30 Infineon Technologies Ag Circuit element with a first layer of an electrically insulating substrate material and method for producing a circuit element
DE10329247A1 (en) * 2003-06-24 2005-01-27 Infineon Technologies Ag A compound for forming a self-assembling monolayer, a layered structure, a semiconductor device and a method for producing a layered structure
US6989290B2 (en) * 2003-11-15 2006-01-24 Ari Aviram Electrical contacts for molecular electronic transistors
PL1748767T3 (en) 2004-05-28 2012-08-31 Unigen Inc 1-(3-methyl-2,4-dimethoxyphenyl)-3-(2',4'-dihydroxyphenyl)-propane as a potent tyrosinase inhibitor
CA2567930A1 (en) * 2004-06-08 2005-12-22 Nanosys, Inc. Methods and devices for forming nanostructure monolayers and devices including such monolayers
US7776758B2 (en) * 2004-06-08 2010-08-17 Nanosys, Inc. Methods and devices for forming nanostructure monolayers and devices including such monolayers
US7968273B2 (en) 2004-06-08 2011-06-28 Nanosys, Inc. Methods and devices for forming nanostructure monolayers and devices including such monolayers
US8563133B2 (en) * 2004-06-08 2013-10-22 Sandisk Corporation Compositions and methods for modulation of nanostructure energy levels
JP4901137B2 (en) 2004-06-24 2012-03-21 ソニー株式会社 Functional molecular device and functional molecular device
WO2006000064A2 (en) * 2004-06-28 2006-01-05 Interuniversitair Microelektronica Centrum Vzw Device for controlling the flow of charged carriers through a nanopore in a mebmrane and method for the fabrication of such a device
EP1630881B1 (en) 2004-08-31 2011-11-16 STMicroelectronics Srl Hosting structure of nanometric elements and corresponding manufacturing method
EP1630882B1 (en) 2004-08-31 2012-05-02 STMicroelectronics S.r.l. Nanometric structure and corresponding manufacturing method
DE602004016496D1 (en) 2004-08-31 2008-10-23 St Microelectronics Srl Process for the preparation of a host structure for nanometer-sized elements
US20060068401A1 (en) * 2004-09-30 2006-03-30 Flory Curt A Biopolymer resonant tunneling with a gate voltage source
US8563237B2 (en) 2004-09-30 2013-10-22 Agilent Technologies, Inc. Biopolymer resonant tunneling with a gate voltage source
US20060086626A1 (en) * 2004-10-22 2006-04-27 Joyce Timothy H Nanostructure resonant tunneling with a gate voltage source
DE102005003475A1 (en) * 2005-01-25 2006-08-03 Infineon Technologies Ag Novel connection of organic molecules to a silicon surface for the production of storage elements with organic components
US8076668B2 (en) * 2005-03-08 2011-12-13 The Governers Of The University Of Alberta Electrostatically regulated atomic scale electroconductivity device
US7786472B2 (en) * 2006-03-20 2010-08-31 Arizona Board of Regents/Behalf of University of Arizona Quantum interference effect transistor (QuIET)
US7615779B2 (en) * 2006-03-23 2009-11-10 Alcatel-Lucent Usa Inc. Forming electrodes to small electronic devices having self-assembled organic layers
KR20090077779A (en) * 2006-10-12 2009-07-15 이데미쓰 고산 가부시키가이샤 Organic thin film transistor device and organic thin film light-emitting transistor
KR102397221B1 (en) 2008-07-21 2022-05-12 유니젠, 인크. Series of skin-whitening (lightening) compounds
JP5181962B2 (en) * 2008-09-19 2013-04-10 ソニー株式会社 Molecular device, manufacturing method thereof, integrated circuit device, manufacturing method thereof, three-dimensional integrated circuit device, and manufacturing method thereof
US20120112830A1 (en) * 2010-11-04 2012-05-10 Ludwig Lester F Towards the very smallest electronic circuits and systems: transduction, signal processing, and digital logic in molecular fused-rings via mesh ring-currents
KR102113823B1 (en) 2011-03-24 2020-05-21 유니젠, 인크. Compounds and methods for preparation of diarylpropanes
US10370247B2 (en) 2016-08-29 2019-08-06 International Business Machines Corporation Contacting molecular components
US20200142309A1 (en) * 2018-11-02 2020-05-07 Rohm And Haas Electronic Materials Llc Aromatic underlayer
CN112582541B (en) * 2020-12-06 2022-07-29 南开大学 Vertical monomolecular film field effect transistor based on two-dimensional laminated heterostructure and preparation method thereof
JP2023081627A (en) * 2021-12-01 2023-06-13 キオクシア株式会社 organic molecular memory
CN115745833A (en) * 2022-11-02 2023-03-07 宁夏中星显示材料有限公司 Preparation method of 4-alkyl-4' -cyanobiphenyl
CN116217573A (en) * 2023-02-24 2023-06-06 南开大学 Vertical monomolecular film field effect control switch and preparation method thereof

Family Cites Families (1)

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Publication number Priority date Publication date Assignee Title
US6121642A (en) * 1998-07-20 2000-09-19 International Business Machines Corporation Junction mott transition field effect transistor (JMTFET) and switch for logic and memory applications

Also Published As

Publication number Publication date
WO2002035580A2 (en) 2002-05-02
WO2002035580A3 (en) 2003-07-03
US20050101063A1 (en) 2005-05-12

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