BR0117103A - Célula de memória - Google Patents

Célula de memória

Info

Publication number
BR0117103A
BR0117103A BR0117103-8A BR0117103A BR0117103A BR 0117103 A BR0117103 A BR 0117103A BR 0117103 A BR0117103 A BR 0117103A BR 0117103 A BR0117103 A BR 0117103A
Authority
BR
Brazil
Prior art keywords
memory
memory cell
development
electrical resistance
functional zone
Prior art date
Application number
BR0117103-8A
Other languages
English (en)
Inventor
Juri Heinrich Krieger
Nikolay Fedorovich Yudanov
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of BR0117103A publication Critical patent/BR0117103A/pt

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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/202—Integrated devices comprising a common active layer
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0064—Verifying circuits or methods
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5664—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using organic memory material storage elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G11C13/0016—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material comprising polymers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • H—ELECTRICITY
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    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
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    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
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    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H10N70/023—Formation of switching materials, e.g. deposition of layers by chemical vapor deposition, e.g. MOCVD, ALD
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    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
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    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
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    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
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    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
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    • H10N70/841—Electrodes
    • H10N70/8416—Electrodes adapted for supplying ionic species
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    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
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    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
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    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8825—Selenides, e.g. GeSe
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    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
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    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
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    • H10N70/883—Oxides or nitrides
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    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
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    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx
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    • H10N70/883—Oxides or nitrides
    • H10N70/8836—Complex metal oxides, e.g. perovskites, spinels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/10—Resistive cells; Technology aspects
    • G11C2213/11—Metal ion trapping, i.e. using memory material including cavities, pores or spaces in form of tunnels or channels wherein metal ions can be trapped but do not react and form an electro-deposit creating filaments or dendrites
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/10—Resistive cells; Technology aspects
    • G11C2213/15—Current-voltage curve
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/30—Resistive cell, memory material aspects
    • G11C2213/34—Material includes an oxide or a nitride
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
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    • G11C2213/35—Material including carbon, e.g. graphite, grapheme
    • G—PHYSICS
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/50—Resistive cell structure aspects
    • G11C2213/56—Structure including two electrodes, a memory active layer and a so called passive or source or reservoir layer which is NOT an electrode, wherein the passive or source or reservoir layer is a source of ions which migrate afterwards in the memory active layer to be only trapped there, to form conductive filaments there or to react with the material of the memory active layer in redox way
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/71—Three dimensional array
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    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
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    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
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    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Nitrogen And Oxygen Or Sulfur-Condensed Heterocyclic Ring Systems (AREA)
  • Read Only Memory (AREA)

Abstract

"CéLULA DE MEMóRIA". A invenção é no campo da engenharia de computação e pode ser utilizada em dispositivos de memória para vários computadores, especificamente no desenvolvimento de um sistema de memória universal com altas velocidades de leitura e de gravação de dados juntamente com capacidades para o armazenamento a longo prazo e alta densidade de informação, bem como no desenvolvimento de equipamento de vídeo e de áudio de uma nova geração, no desenvolvimento de sistemas de memória associativa, e na criação de sinapses (elementos de circuito elétrico provido de uma resistência elétrica programável) para redes neurais. A falta de tal elemento atrasa o desenvolvimento de verdadeiros computadores neuronais. A invenção tem por base a tarefa de criar um tipo essencialmente novo de célula de memória que permita armazenar vários bits de dados, tenha rápida comutação de resistência e exija baixa voltagem operacional mas, ao mesmo tempo, permita combinar sua tecnologia de fabricação com a tecnologia moderna de fabricação de semicondutores. A Figura 6 mostra uma opção de implementação da célula de memória reivindicada contendo dois eletrodos de alumínio contínuos 1 e 2 entre os quais há uma zona funcional multicamada que consiste de uma camada ativa 3, uma camada de barreira 4 e uma camada passiva 5. Esta estrutura da zona funcional permite mudar a resistência elétrica da zona ativa e/ou formar áreas altamente condutores ou linhas com condução metálica na zona ativa sob a influência do campo elétrico externo e/ou sua emissão de luz na célula de memória e reter sua resistência elétrica por longos períodos de tempo sem aplicar campos elétricos externos. A célula de memória é vantajosamente distintiva dos elementos de memória de um único bit utilizados atualmente, pois ele pode armazenar vários bits de informação. O tempo de armazenamento dos dados depende da estrutura da célula de memória, do material utilizado para a zona funcional e do modo de gravação. Ele pode variar de vários segundos (pode ser utilizado para construir memória dinâmica) a vários anos (pode ser utilizado para construir memória de longo prazo, como a memória flash). é possível criar uma memória universal que pode funcionar tanto nos modos dinâmico como no de longo prazo, dependendo do modo de gravação dos dados.
BR0117103-8A 2001-08-13 2001-08-13 Célula de memória BR0117103A (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/RU2001/000334 WO2003017282A1 (fr) 2001-08-13 2001-08-13 Cellule de memoire

Publications (1)

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BR0117103A true BR0117103A (pt) 2004-08-10

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BR0117103-8A BR0117103A (pt) 2001-08-13 2001-08-13 Célula de memória

Country Status (8)

Country Link
US (5) US6992323B2 (pt)
EP (1) EP1434232B1 (pt)
JP (1) JP2005500682A (pt)
KR (1) KR100860134B1 (pt)
CN (1) CN100419906C (pt)
BR (1) BR0117103A (pt)
DE (1) DE60130586T2 (pt)
WO (1) WO2003017282A1 (pt)

Families Citing this family (255)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2002340793A1 (en) 2001-05-07 2002-11-18 Coatue Corporation Molecular memory device
KR100895901B1 (ko) 2001-05-07 2009-05-04 어드밴스드 마이크로 디바이시즈, 인코포레이티드 메모리 효과를 갖는 스위치 요소
US6806526B2 (en) 2001-08-13 2004-10-19 Advanced Micro Devices, Inc. Memory device
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US6992323B2 (en) 2006-01-31
KR20040035734A (ko) 2004-04-29
DE60130586D1 (de) 2007-10-31
US20030053350A1 (en) 2003-03-20
US7254053B2 (en) 2007-08-07
WO2003017282A1 (fr) 2003-02-27
EP1434232B1 (en) 2007-09-19
EP1434232A1 (en) 2004-06-30
EP1434232A4 (en) 2005-09-07
CN1543652A (zh) 2004-11-03
US6815286B2 (en) 2004-11-09
JP2005500682A (ja) 2005-01-06
US7026702B2 (en) 2006-04-11
KR100860134B1 (ko) 2008-09-25
DE60130586T2 (de) 2008-06-19
CN100419906C (zh) 2008-09-17
US20040246768A1 (en) 2004-12-09
US20040160801A1 (en) 2004-08-19
US20030179633A1 (en) 2003-09-25
US6864522B2 (en) 2005-03-08
US20040159835A1 (en) 2004-08-19

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