KR101036975B1 - 스위칭 윈도우를 조정하는 저항부를 포함하는 저항 변화형메모리 소자 - Google Patents
스위칭 윈도우를 조정하는 저항부를 포함하는 저항 변화형메모리 소자 Download PDFInfo
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- KR101036975B1 KR101036975B1 KR1020050076228A KR20050076228A KR101036975B1 KR 101036975 B1 KR101036975 B1 KR 101036975B1 KR 1020050076228 A KR1020050076228 A KR 1020050076228A KR 20050076228 A KR20050076228 A KR 20050076228A KR 101036975 B1 KR101036975 B1 KR 101036975B1
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- memory device
- resistance
- switching window
- adjusting
- change type
- Prior art date
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- 230000015654 memory Effects 0.000 claims abstract description 51
- 239000004065 semiconductor Substances 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 229920000642 polymer Polymers 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 4
- 229920001940 conductive polymer Polymers 0.000 claims description 4
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- 238000012360 testing method Methods 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 230000001939 inductive effect Effects 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000002207 thermal evaporation Methods 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- SKJCKYVIQGBWTN-UHFFFAOYSA-N (4-hydroxyphenyl) methanesulfonate Chemical compound CS(=O)(=O)OC1=CC=C(O)C=C1 SKJCKYVIQGBWTN-UHFFFAOYSA-N 0.000 description 2
- VUTWBSJIBAPTLY-UHFFFAOYSA-N 1-tert-butyl-2-(2-phenylethynyl)benzene Chemical group C(C)(C)(C)C1=C(C=CC=C1)C#CC1=CC=CC=C1 VUTWBSJIBAPTLY-UHFFFAOYSA-N 0.000 description 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 2
- QZBGOTVBHYKUDS-UHFFFAOYSA-N 5-amino-1,2-dihydropyrazol-3-one Chemical compound NC1=CC(=O)NN1 QZBGOTVBHYKUDS-UHFFFAOYSA-N 0.000 description 2
- UJOBWOGCFQCDNV-UHFFFAOYSA-N 9H-carbazole Chemical compound C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 229920000767 polyaniline Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- MLOXIXGLIZLPDP-UHFFFAOYSA-N 2-amino-1h-imidazole-4,5-dicarbonitrile Chemical compound NC1=NC(C#N)=C(C#N)N1 MLOXIXGLIZLPDP-UHFFFAOYSA-N 0.000 description 1
- IOPDYTCCKSYLJG-UHFFFAOYSA-N 3,3,3-trifluoroprop-1-ynylbenzene Chemical group FC(F)(F)C#CC1=CC=CC=C1 IOPDYTCCKSYLJG-UHFFFAOYSA-N 0.000 description 1
- FASNPPWZLHQZAJ-UHFFFAOYSA-N 3,3-dimethylbut-1-ynylbenzene Chemical group CC(C)(C)C#CC1=CC=CC=C1 FASNPPWZLHQZAJ-UHFFFAOYSA-N 0.000 description 1
- CKJRIVCXNKBSQQ-UHFFFAOYSA-N 9h-carbazole;2-phenylethynylbenzene Chemical group C1=CC=C2C3=CC=CC=C3NC2=C1.C1=CC=CC=C1C#CC1=CC=CC=C1 CKJRIVCXNKBSQQ-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- NLZUEZXRPGMBCV-UHFFFAOYSA-N Butylhydroxytoluene Chemical compound CC1=CC(C(C)(C)C)=C(O)C(C(C)(C)C)=C1 NLZUEZXRPGMBCV-UHFFFAOYSA-N 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910000618 GeSbTe Inorganic materials 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- JRXXLCKWQFKACW-UHFFFAOYSA-N biphenylacetylene Chemical group C1=CC=CC=C1C#CC1=CC=CC=C1 JRXXLCKWQFKACW-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 150000004770 chalcogenides Chemical class 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229920000547 conjugated polymer Polymers 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- WBCLXFIDEDJGCC-UHFFFAOYSA-N hexafluoro-2-butyne Chemical group FC(F)(F)C#CC(F)(F)F WBCLXFIDEDJGCC-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 229910052981 lead sulfide Inorganic materials 0.000 description 1
- 229940056932 lead sulfide Drugs 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- -1 oxides Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229920001197 polyacetylene Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000015 polydiacetylene Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920006324 polyoxymethylene Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 150000004763 sulfides Chemical class 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
- PCCVSPMFGIFTHU-UHFFFAOYSA-N tetracyanoquinodimethane Chemical compound N#CC(C#N)=C1C=CC(=C(C#N)C#N)C=C1 PCCVSPMFGIFTHU-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- UZIXCCMXZQWTPB-UHFFFAOYSA-N trimethyl(2-phenylethynyl)silane Chemical group C[Si](C)(C)C#CC1=CC=CC=C1 UZIXCCMXZQWTPB-UHFFFAOYSA-N 0.000 description 1
- CCGULKCUSSEENW-UHFFFAOYSA-N trimethyl-[2-(2-phenylethynyl)phenyl]silane Chemical group C[Si](C)(C)C1=CC=CC=C1C#CC1=CC=CC=C1 CCGULKCUSSEENW-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Shaping switching materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (11)
- 저항 변화형 메모리 소자에 있어서, 스위칭 윈도우를 조정하는 저항부를 포함하는 것을 특징으로 하는 저항 변화형 메모리 소자.
- 제 1항에 있어서, 상기 스위칭 윈도우를 조정하는 저항부가 메모리 소자 외부에 직렬로 연결된 것을 특징으로 하는 스위칭 윈도우를 조정하는 저항부를 포함하는 저항 변화형 메모리 소자.
- 제 1항에 있어서, 상기 스위칭 윈도우를 조정하는 저항부가 메모리 소자 내부에 장착된 것을 특징으로 하는 스위칭 윈도우를 조정하는 저항부를 포함하는 저항 변화형 메모리 소자.
- 제 3항에 있어서, 상기 메모리 소자가 하부 전극, 스위칭 윈도우를 조정하는 저항부, 저항 메모리층(resistive memory part) 및 상부 전극이 차례로 형성된 구조를 갖는 것을 특징으로 하는 스위칭 윈도우를 조정하는 저항부를 포함하는 저항 변화형 메모리 소자.
- 제 4항에 있어서, 상기 메모리 소자가 스위칭 윈도우를 조정하는 저항부와 저항 메모리층 사이에 금속층을 추가로 포함하는 것을 특징으로 하는 스위칭 윈도우 를 조정하는 저항부를 포함하는 저항 변화형 메모리 소자.
- 제 2항에 있어서, 상기 스위칭 윈도우를 조정하는 저항부가 금속 배선인 것을 특징으로 하는 스위칭 윈도우를 조정하는 저항부를 포함하는 저항 변화형 메모리 소자.
- 제 1항에 있어서, 상기 스위칭 윈도우를 조정하는 저항부는 유기 반도체 재료 또는 무기 반도체 재료로 구성되는 것을 특징으로 하는 스위칭 윈도우를 조정하는 저항부를 포함하는 저항 변화형 메모리 소자.
- 제 7항에 있어서, 상기 유기 반도체 재료가 전도성 폴리머 또는 전도성 부분(conducting moiety)에 의해 도핑된 절연 폴리머임을 특징으로 하는 스위칭 윈도우를 조정하는 저항부를 포함하는 저항 변화형 메모리 소자.
- 제 7항에 있어서, 상기 무기 반도체 재료가 진성 반도체, 외인성 반도체, 화합물 반도체로 구성되는 그룹으로부터 선택되는 것임을 특징으로 하는 스위칭 윈도우를 조정하는 저항부를 포함하는 저항 변화형 메모리 소자.
- 제 1항에 있어서, 상기 저항 변화형 메모리 소자가 유기 메모리, 금속 산화물 저항 메모리, 또는 상변화 메모리 (PRAM)인 것을 특징으로 하는 스위칭 윈도우를 조정하는 저항부를 포함하는 저항 변화형 메모리 소자.
- 제 1항에 있어서, 상기 메모리 소자가 WORM 타입 메모리 소자임을 특징으로 하는 스위칭 윈도우를 조정하는 저항부를 포함하는 저항 변화형 메모리 소자.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/353,006 US7656696B2 (en) | 2005-02-14 | 2006-02-14 | Resistive memory device having resistor part for controlling switching window |
JP2006036235A JP2006229227A (ja) | 2005-02-14 | 2006-02-14 | 抵抗変化型メモリ素子 |
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KR20050011958 | 2005-02-14 | ||
KR1020050011958 | 2005-02-14 |
Publications (2)
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KR20060091221A KR20060091221A (ko) | 2006-08-18 |
KR101036975B1 true KR101036975B1 (ko) | 2011-05-25 |
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KR1020050076228A KR101036975B1 (ko) | 2005-02-14 | 2005-08-19 | 스위칭 윈도우를 조정하는 저항부를 포함하는 저항 변화형메모리 소자 |
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KR (1) | KR101036975B1 (ko) |
CN (1) | CN1828962A (ko) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2014058858A1 (en) * | 2012-10-09 | 2014-04-17 | Saudi Basic Industries Corporation | Resistive memory device fabricated from single polymer material |
CN103427021B (zh) * | 2013-08-09 | 2015-11-18 | 中国科学院上海硅酸盐研究所 | 低功耗电阻式随机存储器的存储单元及其制备方法 |
KR101450093B1 (ko) * | 2013-10-22 | 2014-10-15 | 한국과학기술연구원 | 이종접합 산화막 구조를 이용한 저항변화 메모리소자 및 그 제조방법 |
WO2015186975A1 (ko) * | 2014-06-03 | 2015-12-10 | 제주대학교 산학협력단 | 멤리스터를 이용한 메모리 셀 |
KR101577532B1 (ko) * | 2014-06-03 | 2015-12-16 | 제주대학교 산학협력단 | 멤리스터를 이용한 메모리 셀 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0621531A (ja) * | 1992-07-01 | 1994-01-28 | Rohm Co Ltd | ニューロ素子 |
KR20040035734A (ko) * | 2001-08-13 | 2004-04-29 | 어드밴스드 마이크로 디바이시즈, 인코포레이티드 | 메모리 셀 |
JP2004513513A (ja) | 2000-10-31 | 2004-04-30 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | 有機物双安定デバイス及び有機物メモリセル |
KR20050058931A (ko) * | 2003-12-13 | 2005-06-17 | 주식회사 하이닉스반도체 | 상 변화 저항 셀, 이를 이용한 불휘발성 메모리 장치 및그 제어 방법 |
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2005
- 2005-08-19 KR KR1020050076228A patent/KR101036975B1/ko active IP Right Grant
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2006
- 2006-02-14 CN CNA2006100070279A patent/CN1828962A/zh active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0621531A (ja) * | 1992-07-01 | 1994-01-28 | Rohm Co Ltd | ニューロ素子 |
JP2004513513A (ja) | 2000-10-31 | 2004-04-30 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | 有機物双安定デバイス及び有機物メモリセル |
KR20040035734A (ko) * | 2001-08-13 | 2004-04-29 | 어드밴스드 마이크로 디바이시즈, 인코포레이티드 | 메모리 셀 |
KR20050058931A (ko) * | 2003-12-13 | 2005-06-17 | 주식회사 하이닉스반도체 | 상 변화 저항 셀, 이를 이용한 불휘발성 메모리 장치 및그 제어 방법 |
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KR20060091221A (ko) | 2006-08-18 |
CN1828962A (zh) | 2006-09-06 |
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