DE69218893T2 - Tunneleffekttransistor - Google Patents

Tunneleffekttransistor

Info

Publication number
DE69218893T2
DE69218893T2 DE69218893T DE69218893T DE69218893T2 DE 69218893 T2 DE69218893 T2 DE 69218893T2 DE 69218893 T DE69218893 T DE 69218893T DE 69218893 T DE69218893 T DE 69218893T DE 69218893 T2 DE69218893 T2 DE 69218893T2
Authority
DE
Germany
Prior art keywords
effect transistor
tunnel effect
tunnel
transistor
effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69218893T
Other languages
English (en)
Other versions
DE69218893D1 (de
Inventor
Tetsuya Uemura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE69218893D1 publication Critical patent/DE69218893D1/de
Publication of DE69218893T2 publication Critical patent/DE69218893T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391—Gated diode structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors
    • H01L29/7376—Resonant tunnelling transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Bipolar Transistors (AREA)
DE69218893T 1991-12-02 1992-12-02 Tunneleffekttransistor Expired - Fee Related DE69218893T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3318174A JP2734260B2 (ja) 1991-12-02 1991-12-02 トンネルトランジスタ

Publications (2)

Publication Number Publication Date
DE69218893D1 DE69218893D1 (de) 1997-05-15
DE69218893T2 true DE69218893T2 (de) 1997-09-04

Family

ID=18096295

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69218893T Expired - Fee Related DE69218893T2 (de) 1991-12-02 1992-12-02 Tunneleffekttransistor

Country Status (4)

Country Link
US (1) US5349202A (de)
EP (1) EP0545381B1 (de)
JP (1) JP2734260B2 (de)
DE (1) DE69218893T2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5489785A (en) * 1994-03-11 1996-02-06 Motorola Band-to-band resonant tunneling transistor
JP3388090B2 (ja) * 1996-04-26 2003-03-17 富士通株式会社 電流駆動される半導体装置および高移動度トランジスタ
JP4213776B2 (ja) * 1997-11-28 2009-01-21 光照 木村 Ｍｏｓゲートショットキートンネルトランジスタおよびこれを用いた集積回路
US7026642B2 (en) * 2003-08-27 2006-04-11 Micron Technology, Inc. Vertical tunneling transistor
US7224041B1 (en) * 2003-09-30 2007-05-29 The Regents Of The University Of California Design and fabrication of 6.1-Å family semiconductor devices using semi-insulating A1Sb substrate
US20160211393A1 (en) * 2015-01-16 2016-07-21 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Tunnel Diode With Broken-Gap Quantum Well

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4326208A (en) * 1980-03-26 1982-04-20 International Business Machines Corporation Semiconductor inversion layer transistor
US4538165A (en) * 1982-03-08 1985-08-27 International Business Machines Corporation FET With heterojunction induced channel
US4849799A (en) * 1986-07-31 1989-07-18 American Telephone And Telegraph Company At&T Bell Laboratories Resonant tunneling transistor
JPH0658913B2 (ja) * 1987-01-13 1994-08-03 日本電気株式会社 バイポ−ラトランジスタ
JPS63281464A (ja) * 1987-05-13 1988-11-17 Nec Corp 共鳴トンネルトランジスタ
US5113231A (en) * 1989-09-07 1992-05-12 California Institute Of Technology Quantum-effect semiconductor devices
US5079601A (en) * 1989-12-20 1992-01-07 International Business Machines Corporation Optoelectronic devices based on intraband transitions in combinations of type i and type ii tunnel junctions

Also Published As

Publication number Publication date
US5349202A (en) 1994-09-20
EP0545381A2 (de) 1993-06-09
EP0545381B1 (de) 1997-04-09
EP0545381A3 (de) 1994-02-02
DE69218893D1 (de) 1997-05-15
JP2734260B2 (ja) 1998-03-30
JPH05206152A (ja) 1993-08-13

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee