DE69223945D1 - Leistung feldeffekt transistor mit geringer schwellspannung - Google Patents

Leistung feldeffekt transistor mit geringer schwellspannung

Info

Publication number
DE69223945D1
DE69223945D1 DE69223945T DE69223945T DE69223945D1 DE 69223945 D1 DE69223945 D1 DE 69223945D1 DE 69223945 T DE69223945 T DE 69223945T DE 69223945 T DE69223945 T DE 69223945T DE 69223945 D1 DE69223945 D1 DE 69223945D1
Authority
DE
Germany
Prior art keywords
threshold voltage
field effect
effect transistor
low threshold
performance field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69223945T
Other languages
English (en)
Other versions
DE69223945T2 (de
Inventor
John Neilson
Frederick Jones
Joseph A Yedinak
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Harris Corp
Original Assignee
Harris Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Harris Corp filed Critical Harris Corp
Application granted granted Critical
Publication of DE69223945D1 publication Critical patent/DE69223945D1/de
Publication of DE69223945T2 publication Critical patent/DE69223945T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
    • H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE69223945T 1991-11-12 1992-11-12 Leistung feldeffekt transistor mit geringer schwellspannung Expired - Fee Related DE69223945T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/789,901 US5218220A (en) 1991-11-12 1991-11-12 Power fet having reduced threshold voltage
PCT/US1992/009593 WO1993010563A1 (en) 1991-11-12 1992-11-12 Power fet having reduced threshold voltage

Publications (2)

Publication Number Publication Date
DE69223945D1 true DE69223945D1 (de) 1998-02-12
DE69223945T2 DE69223945T2 (de) 1998-08-06

Family

ID=25149041

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69223945T Expired - Fee Related DE69223945T2 (de) 1991-11-12 1992-11-12 Leistung feldeffekt transistor mit geringer schwellspannung

Country Status (5)

Country Link
US (1) US5218220A (de)
EP (1) EP0567623B1 (de)
JP (1) JP3437967B2 (de)
DE (1) DE69223945T2 (de)
WO (1) WO1993010563A1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05160407A (ja) * 1991-12-09 1993-06-25 Nippondenso Co Ltd 縦型絶縁ゲート型半導体装置およびその製造方法
EP0931353A1 (de) * 1996-10-25 1999-07-28 Siliconix Incorporated Schwellanpassung in vertikalem dmos-transistor
JP4521643B2 (ja) * 1997-05-07 2010-08-11 シリコニックス・インコーポレイテッド 側壁スペーサを用いる高密度トレンチ形ｄｍｏｓの製造
KR100486347B1 (ko) * 1997-08-20 2006-04-21 페어차일드코리아반도체 주식회사 절연게이트양극성트랜지스터
JP5166940B2 (ja) * 2008-03-31 2013-03-21 シリコニックス・インコーポレイテッド 側壁スペーサを用いる高密度トレンチ形ｄｍｏｓの製造
US8421151B2 (en) 2009-10-22 2013-04-16 Panasonic Corporation Semiconductor device and process for production thereof
JP6700648B2 (ja) 2012-10-18 2020-05-27 富士電機株式会社 半導体装置の製造方法
JP2015041644A (ja) * 2013-08-20 2015-03-02 富士電機株式会社 Ｍｏｓ型半導体装置の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6218769A (ja) * 1985-07-17 1987-01-27 Tdk Corp 縦形半導体装置及びその製造方法
EP0222326A2 (de) * 1985-11-12 1987-05-20 General Electric Company Verfahren zur Herstellung einer Halbleitervorrichtung mit einem isolierten Gatter
US4803533A (en) * 1986-09-30 1989-02-07 General Electric Company IGT and MOSFET devices having reduced channel width
JP2604777B2 (ja) * 1988-01-18 1997-04-30 松下電工株式会社 二重拡散型電界効果半導体装置の製法
JPH01283966A (ja) * 1988-05-11 1989-11-15 Fuji Electric Co Ltd 絶縁ゲート型バイポーラトランジスタの製造方法

Also Published As

Publication number Publication date
EP0567623A4 (en) 1993-12-15
JPH06504882A (ja) 1994-06-02
DE69223945T2 (de) 1998-08-06
WO1993010563A1 (en) 1993-05-27
EP0567623A1 (de) 1993-11-03
EP0567623B1 (de) 1998-01-07
US5218220A (en) 1993-06-08
JP3437967B2 (ja) 2003-08-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee