DE69232185D1 - Tunneleffektanordnung mit drei Elektroden - Google Patents

Tunneleffektanordnung mit drei Elektroden

Info

Publication number
DE69232185D1
DE69232185D1 DE69232185T DE69232185T DE69232185D1 DE 69232185 D1 DE69232185 D1 DE 69232185D1 DE 69232185 T DE69232185 T DE 69232185T DE 69232185 T DE69232185 T DE 69232185T DE 69232185 D1 DE69232185 D1 DE 69232185D1
Authority
DE
Germany
Prior art keywords
electrodes
tunnel effect
effect arrangement
arrangement
tunnel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69232185T
Other languages
English (en)
Other versions
DE69232185T2 (de
Inventor
Toshio Baba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE69232185D1 publication Critical patent/DE69232185D1/de
Publication of DE69232185T2 publication Critical patent/DE69232185T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391—Gated diode structures
DE69232185T 1991-08-06 1992-08-06 Tunneleffektanordnung mit drei Elektroden Expired - Fee Related DE69232185T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3196321A JP2773474B2 (ja) 1991-08-06 1991-08-06 半導体装置

Publications (2)

Publication Number Publication Date
DE69232185D1 true DE69232185D1 (de) 2001-12-13
DE69232185T2 DE69232185T2 (de) 2002-07-11

Family

ID=16355878

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69232185T Expired - Fee Related DE69232185T2 (de) 1991-08-06 1992-08-06 Tunneleffektanordnung mit drei Elektroden

Country Status (4)

Country Link
US (1) US5686739A (de)
EP (1) EP0526897B1 (de)
JP (1) JP2773474B2 (de)
DE (1) DE69232185T2 (de)

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US5961350A (en) * 1997-07-31 1999-10-05 The Whitaker Corporation Modular side-by-side connectors
JP3475851B2 (ja) 1999-04-28 2003-12-10 日本電気株式会社 フリップフロップ回路
US6594193B2 (en) 2000-06-22 2003-07-15 Progressent Technologies, Inc. Charge pump for negative differential resistance transistor
US6596617B1 (en) 2000-06-22 2003-07-22 Progressant Technologies, Inc. CMOS compatible process for making a tunable negative differential resistance (NDR) device
US6559470B2 (en) 2000-06-22 2003-05-06 Progressed Technologies, Inc. Negative differential resistance field effect transistor (NDR-FET) and circuits using the same
US6479862B1 (en) 2000-06-22 2002-11-12 Progressant Technologies, Inc. Charge trapping device and method for implementing a transistor having a negative differential resistance mode
US6518589B2 (en) 2000-06-22 2003-02-11 Progressant Technologies, Inc. Dual mode FET & logic circuit having negative differential resistance mode
US6754104B2 (en) 2000-06-22 2004-06-22 Progressant Technologies, Inc. Insulated-gate field-effect transistor integrated with negative differential resistance (NDR) FET
US6724655B2 (en) 2000-06-22 2004-04-20 Progressant Technologies, Inc. Memory cell using negative differential resistance field effect transistors
US6512274B1 (en) 2000-06-22 2003-01-28 Progressant Technologies, Inc. CMOS-process compatible, tunable NDR (negative differential resistance) device and method of operating same
US6416358B1 (en) 2001-04-23 2002-07-09 Molex Incorporated Shielded electrical connector for mounting on a printed circuit board
US6693317B2 (en) * 2001-07-13 2004-02-17 Taiwan Semiconductor Manufacturing Company Optical sensor by using tunneling diode
JP4889889B2 (ja) * 2001-08-30 2012-03-07 スパンション エルエルシー 不揮発データ保持機能付きスタティック・ランダム・アクセス・メモリ及びその動作方法
US7453083B2 (en) 2001-12-21 2008-11-18 Synopsys, Inc. Negative differential resistance field effect transistor for implementing a pull up element in a memory cell
US6956262B1 (en) 2001-12-21 2005-10-18 Synopsys Inc. Charge trapping pull up element
DE10202903B4 (de) 2002-01-25 2009-01-22 Qimonda Ag Magnetoresistive Speicherzelle mit polaritätsabhängigem Widerstand und Speicherzelle
US20060113612A1 (en) * 2002-06-19 2006-06-01 Kailash Gopalakrishnan Insulated-gate semiconductor device and approach involving junction-induced intermediate region
US6617643B1 (en) 2002-06-28 2003-09-09 Mcnc Low power tunneling metal-oxide-semiconductor (MOS) device
US6864104B2 (en) 2002-06-28 2005-03-08 Progressant Technologies, Inc. Silicon on insulator (SOI) negative differential resistance (NDR) based memory device with reduced body effects
US6912151B2 (en) 2002-06-28 2005-06-28 Synopsys, Inc. Negative differential resistance (NDR) based memory device with reduced body effects
US6795337B2 (en) 2002-06-28 2004-09-21 Progressant Technologies, Inc. Negative differential resistance (NDR) elements and memory device using the same
US6847562B2 (en) 2002-06-28 2005-01-25 Progressant Technologies, Inc. Enhanced read and write methods for negative differential resistance (NDR) based memory device
US6853035B1 (en) 2002-06-28 2005-02-08 Synopsys, Inc. Negative differential resistance (NDR) memory device with reduced soft error rate
US6567292B1 (en) 2002-06-28 2003-05-20 Progressant Technologies, Inc. Negative differential resistance (NDR) element and memory with reduced soft error rate
US6917078B2 (en) * 2002-08-30 2005-07-12 Micron Technology Inc. One transistor SOI non-volatile random access memory cell
US7042027B2 (en) * 2002-08-30 2006-05-09 Micron Technology, Inc. Gated lateral thyristor-based random access memory cell (GLTRAM)
US6812084B2 (en) 2002-12-09 2004-11-02 Progressant Technologies, Inc. Adaptive negative differential resistance device
US7012833B2 (en) 2002-12-09 2006-03-14 Progressant Technologies, Inc. Integrated circuit having negative differential resistance (NDR) devices with varied peak-to-valley ratios (PVRs)
US6980467B2 (en) 2002-12-09 2005-12-27 Progressant Technologies, Inc. Method of forming a negative differential resistance device
US6849483B2 (en) 2002-12-09 2005-02-01 Progressant Technologies, Inc. Charge trapping device and method of forming the same
US6979580B2 (en) 2002-12-09 2005-12-27 Progressant Technologies, Inc. Process for controlling performance characteristics of a negative differential resistance (NDR) device
US6806117B2 (en) 2002-12-09 2004-10-19 Progressant Technologies, Inc. Methods of testing/stressing a charge trapping device
US7005711B2 (en) 2002-12-20 2006-02-28 Progressant Technologies, Inc. N-channel pull-up element and logic circuit
US8125003B2 (en) * 2003-07-02 2012-02-28 Micron Technology, Inc. High-performance one-transistor memory cell
US7180107B2 (en) * 2004-05-25 2007-02-20 International Business Machines Corporation Method of fabricating a tunneling nanotube field effect transistor
DE102004039424A1 (de) * 2004-08-13 2006-03-23 Infineon Technologies Ag Halbleiterbauelement mit einem MOS-Transistor
US7145186B2 (en) 2004-08-24 2006-12-05 Micron Technology, Inc. Memory cell with trenched gated thyristor
DE102005007822B4 (de) 2005-02-21 2014-05-22 Infineon Technologies Ag Integrierte Schaltungsanordnung mit Tunnel-Feldeffekttransistor
US7847315B2 (en) * 2007-03-09 2010-12-07 Diodes Fabtech Inc. High efficiency rectifier
US7812370B2 (en) * 2007-07-25 2010-10-12 Taiwan Semiconductor Manufacturing Company, Ltd. Tunnel field-effect transistor with narrow band-gap channel and strong gate coupling
US7683364B2 (en) * 2007-09-04 2010-03-23 Texas Instruments Incorporated Gated quantum resonant tunneling diode using CMOS transistor with modified pocket and LDD implants
DE102008010514A1 (de) * 2008-02-22 2009-09-10 Ketek Gmbh Transistor und Verfahren zum Betreiben eines Transistors
US7834345B2 (en) * 2008-09-05 2010-11-16 Taiwan Semiconductor Manufacturing Company, Ltd. Tunnel field-effect transistors with superlattice channels
US8587075B2 (en) * 2008-11-18 2013-11-19 Taiwan Semiconductor Manufacturing Company, Ltd. Tunnel field-effect transistor with metal source
US8384180B2 (en) * 2009-01-22 2013-02-26 Palo Alto Research Center Incorporated Gated co-planar poly-silicon thin film diode
US20110027973A1 (en) * 2009-07-31 2011-02-03 Applied Materials, Inc. Method of forming led structures
US20110104843A1 (en) * 2009-07-31 2011-05-05 Applied Materials, Inc. Method of reducing degradation of multi quantum well (mqw) light emitting diodes
US20110076400A1 (en) * 2009-09-30 2011-03-31 Applied Materials, Inc. Nanocrystalline diamond-structured carbon coating of silicon carbide
JP5383732B2 (ja) * 2011-03-09 2014-01-08 株式会社東芝 半導体装置
WO2013035100A1 (en) * 2011-09-08 2013-03-14 Yeda Research And Development Co. Ltd. At The Weizmann Institute Of Science Efficiency-enhanced thermoelectric devices
EP2754187B1 (de) * 2011-09-08 2020-10-21 Yeda Research and Development Co. Ltd Verfahren zur verwendung von thermoelektrischen vorrichtungen mit erhöhter effizienz
JP5717706B2 (ja) * 2012-09-27 2015-05-13 株式会社東芝 半導体装置及びその製造方法
JP5677394B2 (ja) * 2012-09-28 2015-02-25 株式会社東芝 パスゲート及び半導体記憶装置
JP6323114B2 (ja) * 2014-03-27 2018-05-16 富士通株式会社 電子デバイス及びその製造方法
CN109417032A (zh) * 2016-11-16 2019-03-01 华为技术有限公司 一种隧穿场效应晶体管及其制作方法

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Publication number Priority date Publication date Assignee Title
DE1250514B (de) * 1965-06-28 1900-01-01
US4173763A (en) * 1977-06-09 1979-11-06 International Business Machines Corporation Heterojunction tunneling base transistor
US4198644A (en) * 1978-06-09 1980-04-15 The United States Of America As Represented By The Secretary Of The Army Tunnel diode
JPS5754370A (en) * 1980-09-19 1982-03-31 Nippon Telegr & Teleph Corp <Ntt> Insulating gate type transistor
JPH0612821B2 (ja) * 1981-12-03 1994-02-16 日本電気株式会社 半導体装置
DE3334167A1 (de) * 1983-09-21 1985-04-04 Siemens AG, 1000 Berlin und 8000 München Halbleiterdiode
JPS6080279A (ja) * 1983-10-08 1985-05-08 Nippon Telegr & Teleph Corp <Ntt> 絶縁ゲ−ト形トランジスタ
JPH0783108B2 (ja) * 1986-07-25 1995-09-06 株式会社日立製作所 半導体装置
FR2607630B1 (fr) * 1986-11-28 1989-03-10 Rosencher Emmanuel Jonction tunnel controlee par la surface
NL8800847A (nl) * 1988-04-05 1989-11-01 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting met een soi-struktuur.
JP2743376B2 (ja) * 1988-04-28 1998-04-22 セイコーエプソン株式会社 薄膜集積回路の製造方法
JPH02246160A (ja) * 1989-03-17 1990-10-01 Matsushita Electron Corp 半導体装置
JPH06103757B2 (ja) * 1989-06-22 1994-12-14 株式会社半導体エネルギー研究所 ダイヤモンド電子装置
JP2813023B2 (ja) * 1990-03-13 1998-10-22 株式会社神戸製鋼所 Ｍｉｓ型ダイヤモンド電界効果トランジスタ
JPH0425175A (ja) * 1990-05-21 1992-01-28 Canon Inc ダイオード
US5105247A (en) * 1990-08-03 1992-04-14 Cavanaugh Marion E Quantum field effect device with source extension region formed under a gate and between the source and drain regions

Also Published As

Publication number Publication date
EP0526897A3 (en) 1993-08-11
JP2773474B2 (ja) 1998-07-09
DE69232185T2 (de) 2002-07-11
US5686739A (en) 1997-11-11
EP0526897B1 (de) 2001-11-07
JPH0541520A (ja) 1993-02-19
EP0526897A2 (de) 1993-02-10

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee