CN109417032A - 一种隧穿场效应晶体管及其制作方法 - Google Patents
一种隧穿场效应晶体管及其制作方法 Download PDFInfo
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- CN109417032A CN109417032A CN201680087095.2A CN201680087095A CN109417032A CN 109417032 A CN109417032 A CN 109417032A CN 201680087095 A CN201680087095 A CN 201680087095A CN 109417032 A CN109417032 A CN 109417032A
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- 229910052581 Si3N4 Inorganic materials 0.000 claims description 39
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 39
- 238000004519 manufacturing process Methods 0.000 claims description 18
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 17
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Abstract
一种隧穿场效应晶体管及其制作方法，在该方法中，在衬底上分别形成第一掺杂类型的源区、第二掺杂类型的漏区以及沟道区；形成覆盖所述沟道区的假栅区；形成所述假栅区的侧壁，所述侧壁在所述源区一侧的宽度依据栅区与所述源区之间的重叠区域制作，所述侧壁在所述漏区一侧的宽度依据栅区与所述漏区之间的重叠区域制作；移除所述假栅区和所述假栅区的侧壁，并在移除所述假栅区和所述假栅区的侧壁后得到的空留区域内形成栅区，进而可通过假栅区侧壁来控制栅区与源区的重叠区域，以及栅区与漏区之间的重叠区域。
Description
PCT国内申请，说明书已公开。
Claims (9)
- PCT国内申请，权利要求书已公开。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2016/106157 WO2018090260A1 (zh) | 2016-11-16 | 2016-11-16 | 一种隧穿场效应晶体管及其制作方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109417032A true CN109417032A (zh) | 2019-03-01 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201680087095.2A Pending CN109417032A (zh) | 2016-11-16 | 2016-11-16 | 一种隧穿场效应晶体管及其制作方法 |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN109417032A (zh) |
| WO (1) | WO2018090260A1 (zh) |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5686739A (en) * | 1991-08-06 | 1997-11-11 | Nec Corporation | Three terminal tunnel device |
| US20020074579A1 (en) * | 2000-12-20 | 2002-06-20 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and manufacturing method thereof |
| CN102412302A (zh) * | 2011-10-13 | 2012-04-11 | 北京大学 | 一种抑制双极效应的隧穿场效应晶体管及其制备方法 |
| CN102956458A (zh) * | 2011-08-23 | 2013-03-06 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件结构及其制作方法 |
| CN103117306A (zh) * | 2011-11-16 | 2013-05-22 | 台湾积体电路制造股份有限公司 | 隧道fet及其形成方法 |
| US20140288898A1 (en) * | 2013-03-25 | 2014-09-25 | National Institute Of Advanced Industrial Science And Technology | Device simulation method and device simulation system for tunnel fet, and compact model design method and compact model for tunnel fet |
| US20150060766A1 (en) * | 2013-08-30 | 2015-03-05 | Samsung Electronics Co., Ltd. | Tunneling field effect transistors |
| US20160020335A1 (en) * | 2014-07-18 | 2016-01-21 | Globalfoundries Inc. | Transistors comprising doped region-gap-doped region structures and methods of fabrication |
| CN105845577A (zh) * | 2015-01-16 | 2016-08-10 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件结构及其制作方法 |
| CN106062967A (zh) * | 2014-03-27 | 2016-10-26 | 英特尔公司 | 具有袋状部的p隧穿场效应晶体管器件 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7834345B2 (en) * | 2008-09-05 | 2010-11-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Tunnel field-effect transistors with superlattice channels |
| JP5058277B2 (ja) * | 2010-02-26 | 2012-10-24 | 株式会社東芝 | 半導体装置及びその製造方法 |
| CN102683210B (zh) * | 2011-03-18 | 2020-01-24 | 中国科学院微电子研究所 | 一种半导体结构及其制造方法 |
| CN103560153B (zh) * | 2013-11-15 | 2016-07-13 | 中国科学院上海微系统与信息技术研究所 | 一种隧穿场效应晶体管及其制备方法 |
-
2016
- 2016-11-16 WO PCT/CN2016/106157 patent/WO2018090260A1/zh active Application Filing
- 2016-11-16 CN CN201680087095.2A patent/CN109417032A/zh active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5686739A (en) * | 1991-08-06 | 1997-11-11 | Nec Corporation | Three terminal tunnel device |
| US20020074579A1 (en) * | 2000-12-20 | 2002-06-20 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and manufacturing method thereof |
| CN102956458A (zh) * | 2011-08-23 | 2013-03-06 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件结构及其制作方法 |
| CN102412302A (zh) * | 2011-10-13 | 2012-04-11 | 北京大学 | 一种抑制双极效应的隧穿场效应晶体管及其制备方法 |
| CN103117306A (zh) * | 2011-11-16 | 2013-05-22 | 台湾积体电路制造股份有限公司 | 隧道fet及其形成方法 |
| US20140288898A1 (en) * | 2013-03-25 | 2014-09-25 | National Institute Of Advanced Industrial Science And Technology | Device simulation method and device simulation system for tunnel fet, and compact model design method and compact model for tunnel fet |
| US20150060766A1 (en) * | 2013-08-30 | 2015-03-05 | Samsung Electronics Co., Ltd. | Tunneling field effect transistors |
| CN106062967A (zh) * | 2014-03-27 | 2016-10-26 | 英特尔公司 | 具有袋状部的p隧穿场效应晶体管器件 |
| US20160020335A1 (en) * | 2014-07-18 | 2016-01-21 | Globalfoundries Inc. | Transistors comprising doped region-gap-doped region structures and methods of fabrication |
| CN105845577A (zh) * | 2015-01-16 | 2016-08-10 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件结构及其制作方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2018090260A1 (zh) | 2018-05-24 |
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