DE68926227T2 - Feldeffekthalbleiteranordnung mit Schottky-Gate - Google Patents

Feldeffekthalbleiteranordnung mit Schottky-Gate

Info

Publication number
DE68926227T2
DE68926227T2 DE68926227T DE68926227T DE68926227T2 DE 68926227 T2 DE68926227 T2 DE 68926227T2 DE 68926227 T DE68926227 T DE 68926227T DE 68926227 T DE68926227 T DE 68926227T DE 68926227 T2 DE68926227 T2 DE 68926227T2
Authority
DE
Germany
Prior art keywords
field effect
semiconductor arrangement
effect semiconductor
schottky gate
schottky
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68926227T
Other languages
English (en)
Other versions
DE68926227D1 (de
Inventor
Kizashi Intellectual P Shimada
Tatsuo Intellectual Pr Akiyama
Yutaka Intellectual Pr Koshino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE68926227D1 publication Critical patent/DE68926227D1/de
Application granted granted Critical
Publication of DE68926227T2 publication Critical patent/DE68926227T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47—Schottky barrier electrodes
    • H01L29/475—Schottky barrier electrodes on AIII-BV compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
DE68926227T 1988-12-07 1989-12-06 Feldeffekthalbleiteranordnung mit Schottky-Gate Expired - Fee Related DE68926227T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63309368A JPH02155271A (ja) 1988-12-07 1988-12-07 半導体装置

Publications (2)

Publication Number Publication Date
DE68926227D1 DE68926227D1 (de) 1996-05-15
DE68926227T2 true DE68926227T2 (de) 1996-10-02

Family

ID=17992162

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68926227T Expired - Fee Related DE68926227T2 (de) 1988-12-07 1989-12-06 Feldeffekthalbleiteranordnung mit Schottky-Gate

Country Status (5)

Country Link
US (1) US5049954A (de)
EP (1) EP0377126B1 (de)
JP (1) JPH02155271A (de)
KR (1) KR920010670B1 (de)
DE (1) DE68926227T2 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0456135A (ja) * 1990-06-21 1992-02-24 Nec Corp 積層構造の金属層を有する半導体装置の製造方法
JPH0787243B2 (ja) * 1990-10-18 1995-09-20 富士ゼロックス株式会社 半導体装置
US5254869A (en) * 1991-06-28 1993-10-19 Linear Technology Corporation Aluminum alloy/silicon chromium sandwich schottky diode
US5389564A (en) * 1992-06-22 1995-02-14 Motorola, Inc. Method of forming a GaAs FET having etched ohmic contacts
JPH0897236A (ja) * 1994-09-27 1996-04-12 Mitsubishi Electric Corp 半導体装置の電極，及びその製造方法
DE19517697A1 (de) * 1995-05-13 1996-11-14 Telefunken Microelectron Strahlungsemittierende Diode
US5652444A (en) * 1995-09-22 1997-07-29 Hughes Electronics Structure and method for making FETs and HEMTs insensitive to hydrogen gas
KR100264201B1 (ko) * 1997-05-31 2000-09-01 김영환 반도체장치의 제조방법
US6204560B1 (en) * 1998-04-20 2001-03-20 Uniphase Laser Enterprise Ag Titanium nitride diffusion barrier for use in non-silicon technologies and method
US6103607A (en) * 1998-09-15 2000-08-15 Lucent Technologies Manufacture of MOSFET devices
US6787910B2 (en) 2002-07-23 2004-09-07 National Chiao Tung University Schottky structure in GaAs semiconductor device
US7064050B2 (en) * 2003-11-28 2006-06-20 International Business Machines Corporation Metal carbide gate structure and method of fabrication
US7936040B2 (en) * 2008-10-26 2011-05-03 Koucheng Wu Schottky barrier quantum well resonant tunneling transistor

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5294773A (en) * 1976-02-05 1977-08-09 Sumitomo Electric Ind Ltd Semiconductor element and its manufacture
JPS5998553A (ja) * 1982-11-26 1984-06-06 Mitsubishi Electric Corp ＧａＡｓ半導体装置の電極構造
JPS59119867A (ja) * 1982-12-27 1984-07-11 Toshiba Corp 半導体装置
FR2550889B1 (fr) * 1983-08-17 1985-10-11 Thomson Csf Dispositif amplificateur a effet de champ, fonctionnant dans les hyperfrequences, par transfert d'electrons
JPS60219765A (ja) * 1984-04-16 1985-11-02 Mitsubishi Electric Corp シヨツトキ−障壁電極
JPS6116577A (ja) * 1984-07-03 1986-01-24 Sony Corp 半導体装置
US4956308A (en) * 1987-01-20 1990-09-11 Itt Corporation Method of making self-aligned field-effect transistor
JPS62259474A (ja) * 1986-05-06 1987-11-11 Hitachi Ltd 電界効果トランジスタ
JPS63258066A (ja) * 1987-04-15 1988-10-25 Oki Electric Ind Co Ltd 砒化ガリウム電界効果半導体装置

Also Published As

Publication number Publication date
DE68926227D1 (de) 1996-05-15
KR920010670B1 (ko) 1992-12-12
US5049954A (en) 1991-09-17
JPH02155271A (ja) 1990-06-14
EP0377126A3 (en) 1990-07-25
EP0377126A2 (de) 1990-07-11
KR900011018A (ko) 1990-07-11
EP0377126B1 (de) 1996-04-10

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee