JPH02155271A - 半導体装置 - Google Patents
半導体装置Info
- Publication number
- JPH02155271A JPH02155271A JP63309368A JP30936888A JPH02155271A JP H02155271 A JPH02155271 A JP H02155271A JP 63309368 A JP63309368 A JP 63309368A JP 30936888 A JP30936888 A JP 30936888A JP H02155271 A JPH02155271 A JP H02155271A
- Authority
- JP
- Japan
- Prior art keywords
- film
- gate electrode
- schottky
- substrate
- gaas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 10
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 21
- 229910052751 metal Inorganic materials 0.000 claims abstract description 6
- 239000002184 metal Substances 0.000 claims abstract description 6
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 5
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 4
- 150000002739 metals Chemical class 0.000 claims abstract description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 4
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 4
- 229910052735 hafnium Inorganic materials 0.000 claims abstract description 3
- 150000004767 nitrides Chemical class 0.000 claims abstract description 3
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 3
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 3
- 229910052720 vanadium Inorganic materials 0.000 claims abstract description 3
- 229910052758 niobium Inorganic materials 0.000 claims abstract 2
- 230000008018 melting Effects 0.000 claims description 14
- 238000002844 melting Methods 0.000 claims description 14
- 230000005669 field effect Effects 0.000 claims description 5
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 abstract description 15
- 239000000463 material Substances 0.000 abstract description 10
- 239000007772 electrode material Substances 0.000 abstract description 7
- 229910008486 TiSix Inorganic materials 0.000 abstract description 2
- 229910010421 TiNx Inorganic materials 0.000 abstract 1
- 150000001247 metal acetylides Chemical class 0.000 abstract 1
- 239000010408 film Substances 0.000 description 38
- 239000010936 titanium Substances 0.000 description 18
- 230000006866 deterioration Effects 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 4
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- -1 Nb Nx Chemical class 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- WNUPENMBHHEARK-UHFFFAOYSA-N silicon tungsten Chemical compound [Si].[W] WNUPENMBHHEARK-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
- H01L29/475—Schottky barrier electrodes on AIII-BV compounds
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63309368A JPH02155271A (ja) | 1988-12-07 | 1988-12-07 | 半導体装置 |
| US07/446,467 US5049954A (en) | 1988-12-07 | 1989-12-05 | GaAs field effect semiconductor device having Schottky gate structure |
| DE68926227T DE68926227T2 (de) | 1988-12-07 | 1989-12-06 | Feldeffekthalbleiteranordnung mit Schottky-Gate |
| EP89122454A EP0377126B1 (de) | 1988-12-07 | 1989-12-06 | Feldeffekthalbleiteranordnung mit Schottky-Gate |
| KR1019890018080A KR920010670B1 (ko) | 1988-12-07 | 1989-12-07 | 반도체장치 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63309368A JPH02155271A (ja) | 1988-12-07 | 1988-12-07 | 半導体装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02155271A true JPH02155271A (ja) | 1990-06-14 |
Family
ID=17992162
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63309368A Pending JPH02155271A (ja) | 1988-12-07 | 1988-12-07 | 半導体装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5049954A (de) |
| EP (1) | EP0377126B1 (de) |
| JP (1) | JPH02155271A (de) |
| KR (1) | KR920010670B1 (de) |
| DE (1) | DE68926227T2 (de) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0456135A (ja) * | 1990-06-21 | 1992-02-24 | Nec Corp | 積層構造の金属層を有する半導体装置の製造方法 |
| US5693560A (en) * | 1994-09-27 | 1997-12-02 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device electrode |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0787243B2 (ja) * | 1990-10-18 | 1995-09-20 | 富士ゼロックス株式会社 | 半導体装置 |
| US5254869A (en) * | 1991-06-28 | 1993-10-19 | Linear Technology Corporation | Aluminum alloy/silicon chromium sandwich schottky diode |
| US5389564A (en) * | 1992-06-22 | 1995-02-14 | Motorola, Inc. | Method of forming a GaAs FET having etched ohmic contacts |
| DE19517697A1 (de) * | 1995-05-13 | 1996-11-14 | Telefunken Microelectron | Strahlungsemittierende Diode |
| US5652444A (en) * | 1995-09-22 | 1997-07-29 | Hughes Electronics | Structure and method for making FETs and HEMTs insensitive to hydrogen gas |
| KR100264201B1 (ko) * | 1997-05-31 | 2000-09-01 | 김영환 | 반도체장치의 제조방법 |
| US6204560B1 (en) * | 1998-04-20 | 2001-03-20 | Uniphase Laser Enterprise Ag | Titanium nitride diffusion barrier for use in non-silicon technologies and method |
| US6103607A (en) * | 1998-09-15 | 2000-08-15 | Lucent Technologies | Manufacture of MOSFET devices |
| US6787910B2 (en) | 2002-07-23 | 2004-09-07 | National Chiao Tung University | Schottky structure in GaAs semiconductor device |
| US7064050B2 (en) * | 2003-11-28 | 2006-06-20 | International Business Machines Corporation | Metal carbide gate structure and method of fabrication |
| US7936040B2 (en) * | 2008-10-26 | 2011-05-03 | Koucheng Wu | Schottky barrier quantum well resonant tunneling transistor |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5294773A (en) * | 1976-02-05 | 1977-08-09 | Sumitomo Electric Ind Ltd | Semiconductor element and its manufacture |
| JPS60219765A (ja) * | 1984-04-16 | 1985-11-02 | Mitsubishi Electric Corp | シヨツトキ−障壁電極 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5998553A (ja) * | 1982-11-26 | 1984-06-06 | Mitsubishi Electric Corp | ＧａＡｓ半導体装置の電極構造 |
| JPS59119867A (ja) * | 1982-12-27 | 1984-07-11 | Toshiba Corp | 半導体装置 |
| FR2550889B1 (fr) * | 1983-08-17 | 1985-10-11 | Thomson Csf | Dispositif amplificateur a effet de champ, fonctionnant dans les hyperfrequences, par transfert d'electrons |
| JPS6116577A (ja) * | 1984-07-03 | 1986-01-24 | Sony Corp | 半導体装置 |
| US4956308A (en) * | 1987-01-20 | 1990-09-11 | Itt Corporation | Method of making self-aligned field-effect transistor |
| JPS62259474A (ja) * | 1986-05-06 | 1987-11-11 | Hitachi Ltd | 電界効果トランジスタ |
| JPS63258066A (ja) * | 1987-04-15 | 1988-10-25 | Oki Electric Ind Co Ltd | 砒化ガリウム電界効果半導体装置 |
-
1988
- 1988-12-07 JP JP63309368A patent/JPH02155271A/ja active Pending
-
1989
- 1989-12-05 US US07/446,467 patent/US5049954A/en not_active Expired - Lifetime
- 1989-12-06 EP EP89122454A patent/EP0377126B1/de not_active Expired - Lifetime
- 1989-12-06 DE DE68926227T patent/DE68926227T2/de not_active Expired - Fee Related
- 1989-12-07 KR KR1019890018080A patent/KR920010670B1/ko not_active IP Right Cessation
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5294773A (en) * | 1976-02-05 | 1977-08-09 | Sumitomo Electric Ind Ltd | Semiconductor element and its manufacture |
| JPS60219765A (ja) * | 1984-04-16 | 1985-11-02 | Mitsubishi Electric Corp | シヨツトキ−障壁電極 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0456135A (ja) * | 1990-06-21 | 1992-02-24 | Nec Corp | 積層構造の金属層を有する半導体装置の製造方法 |
| US5693560A (en) * | 1994-09-27 | 1997-12-02 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device electrode |
Also Published As
| Publication number | Publication date |
|---|---|
| EP0377126A3 (en) | 1990-07-25 |
| KR900011018A (ko) | 1990-07-11 |
| DE68926227T2 (de) | 1996-10-02 |
| DE68926227D1 (de) | 1996-05-15 |
| KR920010670B1 (ko) | 1992-12-12 |
| EP0377126B1 (de) | 1996-04-10 |
| US5049954A (en) | 1991-09-17 |
| EP0377126A2 (de) | 1990-07-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH02155271A (ja) | 半導体装置 | |
| US20170047228A1 (en) | Method of Fabricating an Electrical Contact for Use on a Semiconductor Device | |
| JPH0235462B2 (de) | ||
| US6617660B2 (en) | Field effect transistor semiconductor and method for manufacturing the same | |
| JPH08298267A (ja) | 半導体装置及びその製造方法 | |
| JPS6257255A (ja) | 化合物半導体装置の製造方法 | |
| JP2601814B2 (ja) | 化合物半導体装置 | |
| JPS5832513B2 (ja) | 電界効果トランジスタの製造方法 | |
| JP3220624B2 (ja) | 化合物半導体装置及びその製造方法 | |
| JPS59232464A (ja) | 化合物半導体装置 | |
| JPH05335348A (ja) | 半導体装置 | |
| JPH039566A (ja) | 半導体装置 | |
| JPS58103175A (ja) | 半導体装置およびその製造方法 | |
| JPH01194468A (ja) | オーミック電極構造 | |
| JPH05167063A (ja) | オーミック電極とその形成方法及び半導体装置 | |
| JPH03114269A (ja) | 半導体装置およびその製造方法 | |
| JPH0462937A (ja) | 化合物半導体素子の電極製造方法 | |
| JPH05182989A (ja) | 半導体装置 | |
| JPH0581068B2 (de) | ||
| JPS6143443A (ja) | 半導体装置の製造方法 | |
| JPH0554269B2 (de) | ||
| JPH03108325A (ja) | オーム性電極の製造方法 | |
| JPH0332062A (ja) | 電極構造およびその電極構造を用いた半導体素子 | |
| JPH0472385B2 (de) | ||
| JPS63169064A (ja) | 半導体装置 |