JPH0235462B2 - - Google Patents
Info
- Publication number
- JPH0235462B2 JPH0235462B2 JP56036983A JP3698381A JPH0235462B2 JP H0235462 B2 JPH0235462 B2 JP H0235462B2 JP 56036983 A JP56036983 A JP 56036983A JP 3698381 A JP3698381 A JP 3698381A JP H0235462 B2 JPH0235462 B2 JP H0235462B2
- Authority
- JP
- Japan
- Prior art keywords
- metal film
- gate
- source
- metal
- implanted
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910052751 metal Inorganic materials 0.000 claims description 51
- 239000002184 metal Substances 0.000 claims description 51
- 238000000137 annealing Methods 0.000 claims description 18
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 11
- 150000002500 ions Chemical class 0.000 claims description 11
- 229910045601 alloy Inorganic materials 0.000 claims description 7
- 239000000956 alloy Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 102000004129 N-Type Calcium Channels Human genes 0.000 claims description 4
- 108090000699 N-Type Calcium Channels Proteins 0.000 claims description 4
- 230000005669 field effect Effects 0.000 claims description 4
- 150000002739 metals Chemical class 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 3
- 230000004888 barrier function Effects 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- 229910052735 hafnium Inorganic materials 0.000 claims 2
- 229910052758 niobium Inorganic materials 0.000 claims 1
- 238000005468 ion implantation Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910017401 Au—Ge Inorganic materials 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3698381A JPS57152166A (en) | 1981-03-13 | 1981-03-13 | Manufacture of schottky barrier gate field effect transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3698381A JPS57152166A (en) | 1981-03-13 | 1981-03-13 | Manufacture of schottky barrier gate field effect transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57152166A JPS57152166A (en) | 1982-09-20 |
| JPH0235462B2 true JPH0235462B2 (de) | 1990-08-10 |
Family
ID=12484979
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3698381A Granted JPS57152166A (en) | 1981-03-13 | 1981-03-13 | Manufacture of schottky barrier gate field effect transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57152166A (de) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5861693A (ja) * | 1981-10-09 | 1983-04-12 | Kokusai Denshin Denwa Co Ltd <Kdd> | 分布帰還形半導体レ−ザ |
| JPS59171164A (ja) * | 1983-03-18 | 1984-09-27 | Oki Electric Ind Co Ltd | 半導体素子の製造方法 |
| JPS6022378A (ja) * | 1983-07-18 | 1985-02-04 | Nippon Telegr & Teleph Corp <Ntt> | 電界効果トランジスタ及びその製法 |
| JPS6068662A (ja) * | 1983-09-26 | 1985-04-19 | Toshiba Corp | 半導体装置およびその製造方法 |
| JPS60145673A (ja) * | 1984-01-09 | 1985-08-01 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| JPS6143481A (ja) * | 1984-08-08 | 1986-03-03 | Oki Electric Ind Co Ltd | シヨツトキゲ−ト電界効果トランジスタの製造方法 |
| JPH0812868B2 (ja) * | 1984-08-27 | 1996-02-07 | 沖電気工業株式会社 | 化合物半導体素子の製造方法 |
| JPS61216484A (ja) * | 1985-03-22 | 1986-09-26 | Mitsubishi Electric Corp | 電界効果トランジスタの製造方法 |
| EP0220605B1 (de) * | 1985-10-21 | 1990-12-12 | Itt Industries, Inc. | Verfahren zur selbstausrichtenden Herstellung von integrierten Digitalschaltungen aus GaAs |
| JPS647570A (en) * | 1987-01-12 | 1989-01-11 | Int Standard Electric Corp | Manufacture of self-aligning field effect transistor |
| JPH01198079A (ja) * | 1988-02-02 | 1989-08-09 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| JP5667109B2 (ja) * | 2012-03-13 | 2015-02-12 | 日本電信電話株式会社 | ヘテロ接合バイポーラトランジスタおよびその製造方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5012985A (de) * | 1973-06-01 | 1975-02-10 | ||
| JPS5197984A (en) * | 1975-02-26 | 1976-08-28 | Shotsutoki baria geetodenkaikokatoranjisuta oyobi sonoseizohoho | |
| JPS57128071A (en) * | 1981-01-30 | 1982-08-09 | Fujitsu Ltd | Field-effect type semiconductor device and manufacture thereof |
-
1981
- 1981-03-13 JP JP3698381A patent/JPS57152166A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5012985A (de) * | 1973-06-01 | 1975-02-10 | ||
| JPS5197984A (en) * | 1975-02-26 | 1976-08-28 | Shotsutoki baria geetodenkaikokatoranjisuta oyobi sonoseizohoho | |
| JPS57128071A (en) * | 1981-01-30 | 1982-08-09 | Fujitsu Ltd | Field-effect type semiconductor device and manufacture thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57152166A (en) | 1982-09-20 |
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