JPS6160591B2 - - Google Patents
Info
- Publication number
- JPS6160591B2 JPS6160591B2 JP5772377A JP5772377A JPS6160591B2 JP S6160591 B2 JPS6160591 B2 JP S6160591B2 JP 5772377 A JP5772377 A JP 5772377A JP 5772377 A JP5772377 A JP 5772377A JP S6160591 B2 JPS6160591 B2 JP S6160591B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- film
- metal
- effect transistor
- field effect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052751 metal Inorganic materials 0.000 claims description 42
- 239000002184 metal Substances 0.000 claims description 42
- 238000000034 method Methods 0.000 claims description 28
- 230000005669 field effect Effects 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 238000005468 ion implantation Methods 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 8
- 230000008569 process Effects 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 48
- 230000001681 protective effect Effects 0.000 description 25
- 229920002120 photoresistant polymer Polymers 0.000 description 11
- 229910004298 SiO 2 Inorganic materials 0.000 description 10
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 8
- 150000002739 metals Chemical class 0.000 description 7
- 238000010586 diagram Methods 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910017855 NH 4 F Inorganic materials 0.000 description 1
- -1 Si 3 N 4 Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5772377A JPS53143177A (en) | 1977-05-20 | 1977-05-20 | Production of field effect transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5772377A JPS53143177A (en) | 1977-05-20 | 1977-05-20 | Production of field effect transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS53143177A JPS53143177A (en) | 1978-12-13 |
| JPS6160591B2 true JPS6160591B2 (de) | 1986-12-22 |
Family
ID=13063852
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5772377A Granted JPS53143177A (en) | 1977-05-20 | 1977-05-20 | Production of field effect transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS53143177A (de) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5834980A (ja) * | 1981-08-25 | 1983-03-01 | Sumitomo Electric Ind Ltd | シヨツトキゲ−ト電界効果トランジスタ |
| JPS57177572A (en) * | 1981-04-24 | 1982-11-01 | Sumitomo Electric Ind Ltd | Field effect transistor and manufacture thereof |
| JPS5827373A (ja) * | 1981-08-11 | 1983-02-18 | Nippon Telegr & Teleph Corp <Ntt> | 電界効果トランジスタの製法 |
| JPH0758714B2 (ja) * | 1985-06-25 | 1995-06-21 | 株式会社東芝 | ＧａＡｓ半導体装置の製造方法 |
| JPS6240781A (ja) * | 1985-08-15 | 1987-02-21 | Toshiba Corp | シヨツトキ−ゲ−ト型電界効果トランジスタの製造方法 |
-
1977
- 1977-05-20 JP JP5772377A patent/JPS53143177A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS53143177A (en) | 1978-12-13 |
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