JPS5012985A - - Google Patents

Info

Publication number
JPS5012985A
JPS5012985A JP6079373A JP6079373A JPS5012985A JP S5012985 A JPS5012985 A JP S5012985A JP 6079373 A JP6079373 A JP 6079373A JP 6079373 A JP6079373 A JP 6079373A JP S5012985 A JPS5012985 A JP S5012985A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6079373A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP6079373A priority Critical patent/JPS5012985A/ja
Publication of JPS5012985A publication Critical patent/JPS5012985A/ja
Pending legal-status Critical Current

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Landscapes

  • Junction Field-Effect Transistors (AREA)
JP6079373A 1973-06-01 1973-06-01 Pending JPS5012985A (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6079373A JPS5012985A (de) 1973-06-01 1973-06-01

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6079373A JPS5012985A (de) 1973-06-01 1973-06-01

Publications (1)

Publication Number Publication Date
JPS5012985A true JPS5012985A (de) 1975-02-10

Family

ID=13152529

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6079373A Pending JPS5012985A (de) 1973-06-01 1973-06-01

Country Status (1)

Country Link
JP (1) JPS5012985A (de)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53139283U (de) * 1977-04-08 1978-11-04
JPS5425171A (en) * 1977-07-27 1979-02-24 Fujitsu Ltd Manufacture of field effect semiconductor device
JPS57152166A (en) * 1981-03-13 1982-09-20 Nec Corp Manufacture of schottky barrier gate field effect transistor
JPS57152167A (en) * 1981-03-13 1982-09-20 Nec Corp Manufacture of schottky barrier gate field effect transistor
JPS57177572A (en) * 1981-04-24 1982-11-01 Sumitomo Electric Ind Ltd Field effect transistor and manufacture thereof
JPS57197870A (en) * 1981-05-29 1982-12-04 Nec Corp Schottky barrier gate type field-effect transistor and manufacture thereof
JPS5834980A (ja) * 1981-08-25 1983-03-01 Sumitomo Electric Ind Ltd シヨツトキゲ−ト電界効果トランジスタ
JPS5844769A (ja) * 1981-09-10 1983-03-15 Fujitsu Ltd 半導体装置
JPS58115867A (ja) * 1981-12-28 1983-07-09 Fujitsu Ltd 電界効果型半導体装置
JPS58132977A (ja) * 1982-02-02 1983-08-08 Toshiba Corp シヨツトキ−ゲ−ト型ＧａＡｓ電界効果トランジスタの製造方法
JPS59161879A (ja) * 1983-03-04 1984-09-12 Sumitomo Electric Ind Ltd シヨツトキゲ−ト電界効果トランジスタ
JPS6046075A (ja) * 1983-08-24 1985-03-12 Toshiba Corp 電界効果トランジスタ
JPS60115268A (ja) * 1983-11-28 1985-06-21 Fujitsu Ltd 半導体装置の製造方法
JPS61177781A (ja) * 1985-02-02 1986-08-09 Sony Corp 電界効果トランジスタの製造方法
JPH0249438A (ja) * 1989-03-18 1990-02-19 Fujitsu Ltd 半導体装置の製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4946874A (de) * 1972-09-11 1974-05-07

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4946874A (de) * 1972-09-11 1974-05-07

Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53139283U (de) * 1977-04-08 1978-11-04
JPS5425171A (en) * 1977-07-27 1979-02-24 Fujitsu Ltd Manufacture of field effect semiconductor device
JPS5751985B2 (de) * 1977-07-27 1982-11-05
JPS57152166A (en) * 1981-03-13 1982-09-20 Nec Corp Manufacture of schottky barrier gate field effect transistor
JPS57152167A (en) * 1981-03-13 1982-09-20 Nec Corp Manufacture of schottky barrier gate field effect transistor
JPH0235462B2 (de) * 1981-03-13 1990-08-10 Nippon Electric Co
JPH0235463B2 (de) * 1981-03-13 1990-08-10 Nippon Electric Co
JPS57177572A (en) * 1981-04-24 1982-11-01 Sumitomo Electric Ind Ltd Field effect transistor and manufacture thereof
JPH024137B2 (de) * 1981-04-24 1990-01-26 Sumitomo Electric Industries
JPS57197870A (en) * 1981-05-29 1982-12-04 Nec Corp Schottky barrier gate type field-effect transistor and manufacture thereof
JPS5834980A (ja) * 1981-08-25 1983-03-01 Sumitomo Electric Ind Ltd シヨツトキゲ−ト電界効果トランジスタ
JPS5844769A (ja) * 1981-09-10 1983-03-15 Fujitsu Ltd 半導体装置
JPH023548B2 (de) * 1981-09-10 1990-01-24 Fujitsu Ltd
JPS58115867A (ja) * 1981-12-28 1983-07-09 Fujitsu Ltd 電界効果型半導体装置
JPH044751B2 (de) * 1981-12-28 1992-01-29
JPS58132977A (ja) * 1982-02-02 1983-08-08 Toshiba Corp シヨツトキ−ゲ−ト型ＧａＡｓ電界効果トランジスタの製造方法
JPS6312391B2 (de) * 1982-02-02 1988-03-18 Tokyo Shibaura Electric Co
JPS59161879A (ja) * 1983-03-04 1984-09-12 Sumitomo Electric Ind Ltd シヨツトキゲ−ト電界効果トランジスタ
JPS6046075A (ja) * 1983-08-24 1985-03-12 Toshiba Corp 電界効果トランジスタ
JPH0213929B2 (de) * 1983-11-28 1990-04-05 Fujitsu Ltd
JPS60115268A (ja) * 1983-11-28 1985-06-21 Fujitsu Ltd 半導体装置の製造方法
JPS61177781A (ja) * 1985-02-02 1986-08-09 Sony Corp 電界効果トランジスタの製造方法
JPH0249438A (ja) * 1989-03-18 1990-02-19 Fujitsu Ltd 半導体装置の製造方法

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