JPS5012985A - - Google Patents

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Publication number
JPS5012985A
JPS5012985A JP6079373A JP6079373A JPS5012985A JP S5012985 A JPS5012985 A JP S5012985A JP 6079373 A JP6079373 A JP 6079373A JP 6079373 A JP6079373 A JP 6079373A JP S5012985 A JPS5012985 A JP S5012985A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6079373A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP6079373A priority Critical patent/JPS5012985A/ja
Publication of JPS5012985A publication Critical patent/JPS5012985A/ja
Pending legal-status Critical Current

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  • Junction Field-Effect Transistors (AREA)
JP6079373A 1973-06-01 1973-06-01 Pending JPS5012985A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6079373A JPS5012985A (ja) 1973-06-01 1973-06-01

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6079373A JPS5012985A (ja) 1973-06-01 1973-06-01

Publications (1)

Publication Number Publication Date
JPS5012985A true JPS5012985A (ja) 1975-02-10

Family

ID=13152529

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6079373A Pending JPS5012985A (ja) 1973-06-01 1973-06-01

Country Status (1)

Country Link
JP (1) JPS5012985A (ja)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53139283U (ja) * 1977-04-08 1978-11-04
JPS5425171A (en) * 1977-07-27 1979-02-24 Fujitsu Ltd Manufacture of field effect semiconductor device
JPS57152167A (en) * 1981-03-13 1982-09-20 Nec Corp Manufacture of schottky barrier gate field effect transistor
JPS57152166A (en) * 1981-03-13 1982-09-20 Nec Corp Manufacture of schottky barrier gate field effect transistor
JPS57177572A (en) * 1981-04-24 1982-11-01 Sumitomo Electric Ind Ltd Field effect transistor and manufacture thereof
JPS57197870A (en) * 1981-05-29 1982-12-04 Nec Corp Schottky barrier gate type field-effect transistor and manufacture thereof
JPS5834980A (ja) * 1981-08-25 1983-03-01 Sumitomo Electric Ind Ltd シヨツトキゲ−ト電界効果トランジスタ
JPS5844769A (ja) * 1981-09-10 1983-03-15 Fujitsu Ltd 半導体装置
JPS58115867A (ja) * 1981-12-28 1983-07-09 Fujitsu Ltd 電界効果型半導体装置
JPS58132977A (ja) * 1982-02-02 1983-08-08 Toshiba Corp シヨツトキ−ゲ−ト型ＧａＡｓ電界効果トランジスタの製造方法
JPS59161879A (ja) * 1983-03-04 1984-09-12 Sumitomo Electric Ind Ltd シヨツトキゲ−ト電界効果トランジスタ
JPS6046075A (ja) * 1983-08-24 1985-03-12 Toshiba Corp 電界効果トランジスタ
JPS60115268A (ja) * 1983-11-28 1985-06-21 Fujitsu Ltd 半導体装置の製造方法
JPS61177781A (ja) * 1985-02-02 1986-08-09 Sony Corp 電界効果トランジスタの製造方法
JPH0249438A (ja) * 1989-03-18 1990-02-19 Fujitsu Ltd 半導体装置の製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4946874A (ja) * 1972-09-11 1974-05-07

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4946874A (ja) * 1972-09-11 1974-05-07

Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53139283U (ja) * 1977-04-08 1978-11-04
JPS5425171A (en) * 1977-07-27 1979-02-24 Fujitsu Ltd Manufacture of field effect semiconductor device
JPS5751985B2 (ja) * 1977-07-27 1982-11-05
JPS57152167A (en) * 1981-03-13 1982-09-20 Nec Corp Manufacture of schottky barrier gate field effect transistor
JPS57152166A (en) * 1981-03-13 1982-09-20 Nec Corp Manufacture of schottky barrier gate field effect transistor
JPH0235463B2 (ja) * 1981-03-13 1990-08-10 Nippon Electric Co
JPH0235462B2 (ja) * 1981-03-13 1990-08-10 Nippon Electric Co
JPS57177572A (en) * 1981-04-24 1982-11-01 Sumitomo Electric Ind Ltd Field effect transistor and manufacture thereof
JPH024137B2 (ja) * 1981-04-24 1990-01-26 Sumitomo Electric Industries
JPS57197870A (en) * 1981-05-29 1982-12-04 Nec Corp Schottky barrier gate type field-effect transistor and manufacture thereof
JPS5834980A (ja) * 1981-08-25 1983-03-01 Sumitomo Electric Ind Ltd シヨツトキゲ−ト電界効果トランジスタ
JPS5844769A (ja) * 1981-09-10 1983-03-15 Fujitsu Ltd 半導体装置
JPH023548B2 (ja) * 1981-09-10 1990-01-24 Fujitsu Ltd
JPS58115867A (ja) * 1981-12-28 1983-07-09 Fujitsu Ltd 電界効果型半導体装置
JPH044751B2 (ja) * 1981-12-28 1992-01-29
JPS58132977A (ja) * 1982-02-02 1983-08-08 Toshiba Corp シヨツトキ−ゲ−ト型ＧａＡｓ電界効果トランジスタの製造方法
JPS6312391B2 (ja) * 1982-02-02 1988-03-18 Tokyo Shibaura Electric Co
JPS59161879A (ja) * 1983-03-04 1984-09-12 Sumitomo Electric Ind Ltd シヨツトキゲ−ト電界効果トランジスタ
JPS6046075A (ja) * 1983-08-24 1985-03-12 Toshiba Corp 電界効果トランジスタ
JPH0213929B2 (ja) * 1983-11-28 1990-04-05 Fujitsu Ltd
JPS60115268A (ja) * 1983-11-28 1985-06-21 Fujitsu Ltd 半導体装置の製造方法
JPS61177781A (ja) * 1985-02-02 1986-08-09 Sony Corp 電界効果トランジスタの製造方法
JPH0249438A (ja) * 1989-03-18 1990-02-19 Fujitsu Ltd 半導体装置の製造方法

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