JPH024137B2 - - Google Patents
Info
- Publication number
- JPH024137B2 JPH024137B2 JP56063000A JP6300081A JPH024137B2 JP H024137 B2 JPH024137 B2 JP H024137B2 JP 56063000 A JP56063000 A JP 56063000A JP 6300081 A JP6300081 A JP 6300081A JP H024137 B2 JPH024137 B2 JP H024137B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- forming
- mask pattern
- pattern
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 26
- 239000002184 metal Substances 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 11
- 238000005468 ion implantation Methods 0.000 claims description 7
- 230000005669 field effect Effects 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 239000012535 impurity Substances 0.000 claims description 4
- 238000007740 vapor deposition Methods 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 2
- 239000013078 crystal Substances 0.000 description 17
- 238000000034 method Methods 0.000 description 10
- 238000002513 implantation Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 239000010409 thin film Substances 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 238000000137 annealing Methods 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
- H01L29/66856—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET with an active layer made of a group 13/15 material
- H01L29/66863—Lateral single gate transistors
- H01L29/66871—Processes wherein the final gate is made after the formation of the source and drain regions in the active layer, e.g. dummy-gate processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
- H01L29/475—Schottky barrier electrodes on AIII-BV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
- H01L29/66856—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET with an active layer made of a group 13/15 material
- H01L29/66863—Lateral single gate transistors
- H01L29/66878—Processes wherein the final gate is made before the formation, e.g. activation anneal, of the source and drain regions in the active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6300081A JPS57177572A (en) | 1981-04-24 | 1981-04-24 | Field effect transistor and manufacture thereof |
| EP82300499A EP0057605B1 (de) | 1981-01-29 | 1982-01-29 | Schottky-Gate-Feldeffekttransistor und Verfahren zu seiner Herstellung |
| DE8282300499T DE3273695D1 (en) | 1981-01-29 | 1982-01-29 | A schottky-barrier gate field effect transistor and a process for the production of the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6300081A JPS57177572A (en) | 1981-04-24 | 1981-04-24 | Field effect transistor and manufacture thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57177572A JPS57177572A (en) | 1982-11-01 |
| JPH024137B2 true JPH024137B2 (de) | 1990-01-26 |
Family
ID=13216609
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6300081A Granted JPS57177572A (en) | 1981-01-29 | 1981-04-24 | Field effect transistor and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57177572A (de) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007204913A (ja) * | 2006-02-02 | 2007-08-16 | Groz Beckert Kg | 編物システムのためのシステム構成要素とその取り扱い方法 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1816247B1 (de) | 2006-02-02 | 2008-11-26 | Groz-Beckert KG | Systemteil für ein Stricksystem und Handhabungsverfahren |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5012985A (de) * | 1973-06-01 | 1975-02-10 | ||
| JPS535581A (en) * | 1976-07-06 | 1978-01-19 | Toshiba Corp | Schottky gate type field effect transistor |
| JPS53143177A (en) * | 1977-05-20 | 1978-12-13 | Hitachi Ltd | Production of field effect transistor |
-
1981
- 1981-04-24 JP JP6300081A patent/JPS57177572A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5012985A (de) * | 1973-06-01 | 1975-02-10 | ||
| JPS535581A (en) * | 1976-07-06 | 1978-01-19 | Toshiba Corp | Schottky gate type field effect transistor |
| JPS53143177A (en) * | 1977-05-20 | 1978-12-13 | Hitachi Ltd | Production of field effect transistor |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007204913A (ja) * | 2006-02-02 | 2007-08-16 | Groz Beckert Kg | 編物システムのためのシステム構成要素とその取り扱い方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57177572A (en) | 1982-11-01 |
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