KR900011018A - 반도체장치 - Google Patents
반도체장치 Download PDFInfo
- Publication number
- KR900011018A KR900011018A KR1019890018080A KR890018080A KR900011018A KR 900011018 A KR900011018 A KR 900011018A KR 1019890018080 A KR1019890018080 A KR 1019890018080A KR 890018080 A KR890018080 A KR 890018080A KR 900011018 A KR900011018 A KR 900011018A
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor device
- film
- thickness
- tisi
- wsi
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 1
- 229910008484 TiSi Inorganic materials 0.000 claims 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 230000005669 field effect Effects 0.000 claims 1
- 229910052735 hafnium Inorganic materials 0.000 claims 1
- 230000008018 melting Effects 0.000 claims 1
- 238000002844 melting Methods 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 150000002739 metals Chemical class 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 claims 1
- 229910021332 silicide Inorganic materials 0.000 claims 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 229910052720 vanadium Inorganic materials 0.000 claims 1
- 229910052726 zirconium Inorganic materials 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
- H01L29/475—Schottky barrier electrodes on AIII-BV compounds
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 1실시예에 따른 반도체장치의 단면도, 제2도는 제1도에 도시된 반도체장치의 제조공정을 나타낸 단면도, 제3도는 본 발명의 반도체장치에 있어서 Ti막의 두께와 인장 강도간의 관계를 나타낸 도면.
Claims (1)
- GaAs반도체기판(1)상에 밀착형성되며 그 두께가 25nm를 넘지 않는 Ti막(14)과, 이 Ti막(14)상에 적층된 W, Mo, Cr, Ta,V, Hf, Zr, Ti, 또는 이들 금속의 질화물, 규화물, 탄화물, 혹은 WSiXNy, TiNX, TiSiX중의 어느 하나로 이루어진 고융점 전극막(15)을 갖춘 게이트전극(15)을 구비하여 구성된 것을 특징으로 하는 GaAs-전계효과형 반도체장치.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63-309368 | 1988-12-07 | ||
| JP88-309368 | 1988-12-07 | ||
| JP63309368A JPH02155271A (ja) | 1988-12-07 | 1988-12-07 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR900011018A true KR900011018A (ko) | 1990-07-11 |
| KR920010670B1 KR920010670B1 (ko) | 1992-12-12 |
Family
ID=17992162
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019890018080A KR920010670B1 (ko) | 1988-12-07 | 1989-12-07 | 반도체장치 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5049954A (ko) |
| EP (1) | EP0377126B1 (ko) |
| JP (1) | JPH02155271A (ko) |
| KR (1) | KR920010670B1 (ko) |
| DE (1) | DE68926227T2 (ko) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100264201B1 (ko) * | 1997-05-31 | 2000-09-01 | 김영환 | 반도체장치의 제조방법 |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0456135A (ja) * | 1990-06-21 | 1992-02-24 | Nec Corp | 積層構造の金属層を有する半導体装置の製造方法 |
| JPH0787243B2 (ja) * | 1990-10-18 | 1995-09-20 | 富士ゼロックス株式会社 | 半導体装置 |
| US5254869A (en) * | 1991-06-28 | 1993-10-19 | Linear Technology Corporation | Aluminum alloy/silicon chromium sandwich schottky diode |
| US5389564A (en) * | 1992-06-22 | 1995-02-14 | Motorola, Inc. | Method of forming a GaAs FET having etched ohmic contacts |
| JPH0897236A (ja) * | 1994-09-27 | 1996-04-12 | Mitsubishi Electric Corp | 半導体装置の電極，及びその製造方法 |
| DE19517697A1 (de) * | 1995-05-13 | 1996-11-14 | Telefunken Microelectron | Strahlungsemittierende Diode |
| US5652444A (en) * | 1995-09-22 | 1997-07-29 | Hughes Electronics | Structure and method for making FETs and HEMTs insensitive to hydrogen gas |
| US6204560B1 (en) * | 1998-04-20 | 2001-03-20 | Uniphase Laser Enterprise Ag | Titanium nitride diffusion barrier for use in non-silicon technologies and method |
| US6103607A (en) * | 1998-09-15 | 2000-08-15 | Lucent Technologies | Manufacture of MOSFET devices |
| US6787910B2 (en) | 2002-07-23 | 2004-09-07 | National Chiao Tung University | Schottky structure in GaAs semiconductor device |
| US7064050B2 (en) * | 2003-11-28 | 2006-06-20 | International Business Machines Corporation | Metal carbide gate structure and method of fabrication |
| US7936040B2 (en) * | 2008-10-26 | 2011-05-03 | Koucheng Wu | Schottky barrier quantum well resonant tunneling transistor |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5294773A (en) * | 1976-02-05 | 1977-08-09 | Sumitomo Electric Ind Ltd | Semiconductor element and its manufacture |
| JPS5998553A (ja) * | 1982-11-26 | 1984-06-06 | Mitsubishi Electric Corp | ＧａＡｓ半導体装置の電極構造 |
| JPS59119867A (ja) * | 1982-12-27 | 1984-07-11 | Toshiba Corp | 半導体装置 |
| FR2550889B1 (fr) * | 1983-08-17 | 1985-10-11 | Thomson Csf | Dispositif amplificateur a effet de champ, fonctionnant dans les hyperfrequences, par transfert d'electrons |
| JPS60219765A (ja) * | 1984-04-16 | 1985-11-02 | Mitsubishi Electric Corp | シヨツトキ−障壁電極 |
| JPS6116577A (ja) * | 1984-07-03 | 1986-01-24 | Sony Corp | 半導体装置 |
| US4956308A (en) * | 1987-01-20 | 1990-09-11 | Itt Corporation | Method of making self-aligned field-effect transistor |
| JPS62259474A (ja) * | 1986-05-06 | 1987-11-11 | Hitachi Ltd | 電界効果トランジスタ |
| JPS63258066A (ja) * | 1987-04-15 | 1988-10-25 | Oki Electric Ind Co Ltd | 砒化ガリウム電界効果半導体装置 |
-
1988
- 1988-12-07 JP JP63309368A patent/JPH02155271A/ja active Pending
-
1989
- 1989-12-05 US US07/446,467 patent/US5049954A/en not_active Expired - Lifetime
- 1989-12-06 DE DE68926227T patent/DE68926227T2/de not_active Expired - Fee Related
- 1989-12-06 EP EP89122454A patent/EP0377126B1/en not_active Expired - Lifetime
- 1989-12-07 KR KR1019890018080A patent/KR920010670B1/ko not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100264201B1 (ko) * | 1997-05-31 | 2000-09-01 | 김영환 | 반도체장치의 제조방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP0377126A2 (en) | 1990-07-11 |
| KR920010670B1 (ko) | 1992-12-12 |
| DE68926227D1 (de) | 1996-05-15 |
| US5049954A (en) | 1991-09-17 |
| EP0377126B1 (en) | 1996-04-10 |
| DE68926227T2 (de) | 1996-10-02 |
| EP0377126A3 (en) | 1990-07-25 |
| JPH02155271A (ja) | 1990-06-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR900011018A (ko) | 반도체장치 | |
| KR850000775A (ko) | 에칭기술 | |
| KR900017136A (ko) | 반도체장치 | |
| KR920008849A (ko) | 반도체 장치 제조방법 | |
| KR890013786A (ko) | 비정질 실리콘 박막 트랜지스터 어레이 기판 및 그 제조방법 | |
| KR940010276A (ko) | 반도체소자의 금속배선 | |
| KR880014665A (ko) | 반도체장치 및 그 제조방법 | |
| KR910007159A (ko) | Mos형 반도체장치 | |
| KR910013541A (ko) | 반도체 장치의 제조방법 | |
| KR950028136A (ko) | 반도체 장치 및 그 제조방법 | |
| KR920005242A (ko) | 게이트-절연체-반도체의 구조를 가지는 트랜지스터의 제조방법 | |
| KR880002262A (ko) | 반도체장치 | |
| KR900001019A (ko) | 반도체 소자 | |
| KR910001912A (ko) | 반도체장치 | |
| KR900007107A (ko) | 반도체 소자 | |
| KR910013568A (ko) | 화합물 반도체 장치 및 그 제조방법 | |
| KR970013421A (ko) | 박막트랜지스터 제조방법 | |
| KR920005318A (ko) | 텅스텐 실리사이드 전극의 보호방법 | |
| KR960026103A (ko) | 스테퍼 정열 키의 형성방법 | |
| KR950025868A (ko) | 반도체 소자의 비트라인 형성방법 | |
| KR920015483A (ko) | 절연막의 제조방법 | |
| KR970052432A (ko) | 반도체 소자의 게이트 전극 형성 방법 | |
| KR930002857A (ko) | 액정표시장치의 금속배선방법 | |
| KR910015008A (ko) | 금속배선방법 | |
| KR980005509A (ko) | 게이트 선의 제조방법 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| G160 | Decision to publish patent application | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20081120 Year of fee payment: 17 |
|
| EXPY | Expiration of term |