KR920008849A - 반도체 장치 제조방법 - Google Patents
반도체 장치 제조방법 Download PDFInfo
- Publication number
- KR920008849A KR920008849A KR1019910017666A KR910017666A KR920008849A KR 920008849 A KR920008849 A KR 920008849A KR 1019910017666 A KR1019910017666 A KR 1019910017666A KR 910017666 A KR910017666 A KR 910017666A KR 920008849 A KR920008849 A KR 920008849A
- Authority
- KR
- South Korea
- Prior art keywords
- titanium
- film
- orientation ratio
- silicon substrate
- semiconductor device
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 4
- 238000004519 manufacturing process Methods 0.000 title claims 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 14
- 229910052719 titanium Inorganic materials 0.000 claims description 14
- 239000010936 titanium Substances 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims 4
- 229910052710 silicon Inorganic materials 0.000 claims 4
- 239000010703 silicon Substances 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 4
- 238000000151 deposition Methods 0.000 claims 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 238000000137 annealing Methods 0.000 claims 1
- 238000005546 reactive sputtering Methods 0.000 claims 1
- 239000013590 bulk material Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
- H01L21/76861—Post-treatment or after-treatment not introducing additional chemical elements into the layer
- H01L21/76864—Thermal treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
- H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/158—Sputtering
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 제1실시예를 설명하기 위한 반도체 칩의 단면도,
제2도는 제1실시예에서 사용되는 티타늄 타킷 플레이트의 절단 방법을 설명하기 위한 벌크 재질의 투시도,
제3도는 제1실시에에서 사용되는 티타늄 타킷의 구성도.
Claims (5)
- 반도체 장치 제조방법이, 실리콘 기판의 일부가 노출되게 이 실리콘 기판에 형성된 절연막에 적어도 하나의 접촉홀을 형성하는 단계; 티타늄 막과 티타늄 질화물 막을 상기 절연막과 상기 실리콘 기판의 상기 일부에 침착시키는 단계;상기 실리콘 기판을 어닐링하는 단계;및 알루미늄 막, 상기 티타늄 질화물막 및 상기 티타늄 막으로된 3층 구조를 갖는 전극 와이어링층이 형성되게 상기 티타늄 질화막을 침착시키는 단계를 포함하며, 상기 티타늄 질화물 막은 70%이하의 (001)면의 배향비를 갖고 있는 티타늄 타킷을 이용하여 반응성 스퍼터링에 의해 형성되는 반도체 장치 제조방법.
- 제1항에 있어서, 상기 티타늄 타켓은 (001)면의 높은 배향비를 갖고 있는 적어도 하나의 티타늄판관 (001)면의 낮은 배향비를 갖고 있는 적어도 하나의 티타늄으로 구성되는 반도체 장치 제조방법.
- 제2항에 있어서, 각각의 상기 티타늄판의 모양의 3각형인 반도체 장치 제조방법.
- 제1항에 있어서, 상기 티타늄 타킷은 높은 배향비를 갖고 있는 복수의 상기 티타늄판과 낮은 배향비를 갖고 있는 복수의 상기 티타늄판으로 구성되며, 상기 티타늄 타킷의 모양은 다각형인 반도체 장치 제조방법.
- 제1항에 있어서, 상기 티타늄 타킷은 어닐되는 반도체 장치 제조방법.※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP90-271042 | 1990-10-09 | ||
JP27104290 | 1990-10-09 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR920008849A true KR920008849A (ko) | 1992-05-28 |
KR950009278B1 KR950009278B1 (ko) | 1995-08-18 |
Family
ID=17494595
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019910017666A KR950009278B1 (ko) | 1990-10-09 | 1991-10-09 | 반도체장치 제조방법 |
Country Status (4)
Country | Link |
---|---|
US (1) | US5155063A (ko) |
EP (1) | EP0480409B1 (ko) |
KR (1) | KR950009278B1 (ko) |
DE (1) | DE69102851T2 (ko) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5446620A (en) * | 1990-08-01 | 1995-08-29 | Staktek Corporation | Ultra high density integrated circuit packages |
AU8519891A (en) * | 1990-08-01 | 1992-03-02 | Staktek Corporation | Ultra high density integrated circuit packages, method and apparatus |
US5377077A (en) * | 1990-08-01 | 1994-12-27 | Staktek Corporation | Ultra high density integrated circuit packages method and apparatus |
US5858868A (en) * | 1992-05-08 | 1999-01-12 | Yamaha Corporation | Method of manufacturing a laminated wiring structure preventing impurity diffusion therein from N+ and P+ regions in CMOS device with ohmic contact |
JP3587537B2 (ja) | 1992-12-09 | 2004-11-10 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US5801437A (en) * | 1993-03-29 | 1998-09-01 | Staktek Corporation | Three-dimensional warp-resistant integrated circuit module method and apparatus |
US5369056A (en) * | 1993-03-29 | 1994-11-29 | Staktek Corporation | Warp-resistent ultra-thin integrated circuit package fabrication method |
US5772860A (en) * | 1993-09-27 | 1998-06-30 | Japan Energy Corporation | High purity titanium sputtering targets |
US5358615A (en) * | 1993-10-04 | 1994-10-25 | Motorola, Inc. | Process for forming a sputter deposited metal film |
US5705429A (en) * | 1993-10-04 | 1998-01-06 | Yamaha Corporation | Method of manufacturing aluminum wiring at a substrate temperature from 100 to 150 degrees celsius |
EP0690503A1 (en) * | 1994-05-31 | 1996-01-03 | Advanced Micro Devices, Inc. | Improved interconnect line structure and process therefor |
JP3280803B2 (ja) * | 1994-08-18 | 2002-05-13 | 沖電気工業株式会社 | 半導体装置及びその製造方法 |
US5580823A (en) * | 1994-12-15 | 1996-12-03 | Motorola, Inc. | Process for fabricating a collimated metal layer and contact structure in a semiconductor device |
JPH08176823A (ja) * | 1994-12-26 | 1996-07-09 | Sony Corp | 高融点金属薄膜の成膜方法 |
JP2689931B2 (ja) * | 1994-12-29 | 1997-12-10 | 日本電気株式会社 | スパッタ方法 |
JP2754176B2 (ja) * | 1995-03-13 | 1998-05-20 | エルジイ・セミコン・カンパニイ・リミテッド | 緻密なチタン窒化膜及び緻密なチタン窒化膜/薄膜のチタンシリサイドの形成方法及びこれを用いた半導体素子の製造方法 |
TW290731B (ko) * | 1995-03-30 | 1996-11-11 | Siemens Ag | |
US5776831A (en) * | 1995-12-27 | 1998-07-07 | Lsi Logic Corporation | Method of forming a high electromigration resistant metallization system |
US5919342A (en) * | 1997-02-26 | 1999-07-06 | Applied Materials, Inc. | Method for depositing golden titanium nitride |
KR100241506B1 (ko) * | 1997-06-23 | 2000-03-02 | 김영환 | 반도체 소자의 금속 배선 형성 방법 |
EP1022352A3 (en) * | 1998-12-28 | 2002-01-02 | Infineon Technologies North America Corp. | Method for forming metal interconnects with increased electromigration lifetime |
WO2004066384A1 (de) * | 2003-01-23 | 2004-08-05 | Fraunhofer Ges Forschung | Programmierbare schaltungsstruktur und verfahren zur herstellung derselben |
US7550066B2 (en) * | 2004-07-09 | 2009-06-23 | Applied Materials, Inc. | Staggered target tiles |
KR100714269B1 (ko) * | 2004-10-14 | 2007-05-02 | 삼성전자주식회사 | 반도체 소자 제조에 사용되는 금속층 형성방법 |
KR101645834B1 (ko) * | 2012-01-12 | 2016-08-04 | 제이엑스금속주식회사 | 고순도 구리 스퍼터링 타깃 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2040315B (en) * | 1978-12-13 | 1983-05-11 | Glyco Metall Werke | Laminar material or element and a process for its manufacture |
JPS58101454A (ja) * | 1981-12-12 | 1983-06-16 | Nippon Telegr & Teleph Corp <Ntt> | 半導体装置の電極 |
JPS6066425A (ja) * | 1983-09-22 | 1985-04-16 | Nippon Telegr & Teleph Corp <Ntt> | Lsi電極用の高純度モリブデンタ−ゲツトならびに高純度モリブデンシリサイドタ−ゲツトおよびその製造方法 |
AT383758B (de) * | 1985-12-23 | 1987-08-25 | Plansee Metallwerk | Verfahren zur herstellung eines sputter-targets |
JPS62284069A (ja) * | 1986-06-02 | 1987-12-09 | Sumitomo Special Metals Co Ltd | スパッタリング用タ−ゲット |
JPS63111666A (ja) * | 1986-10-30 | 1988-05-16 | Mitsubishi Electric Corp | 半導体装置 |
JPS63161163A (ja) * | 1986-12-25 | 1988-07-04 | Toshiba Corp | スパツタタ−ゲツトの固定治具 |
US4960732A (en) * | 1987-02-19 | 1990-10-02 | Advanced Micro Devices, Inc. | Contact plug and interconnect employing a barrier lining and a backfilled conductor material |
GB2208390B (en) * | 1987-08-06 | 1991-03-27 | Plessey Co Plc | Thin film deposition process |
DE3731621A1 (de) * | 1987-09-19 | 1989-03-30 | Texas Instruments Deutschland | Verfahren zum herstellen einer elektrisch programmierbaren integrierten schaltung |
JPH0719841B2 (ja) * | 1987-10-02 | 1995-03-06 | 株式会社東芝 | 半導体装置 |
JP2776826B2 (ja) * | 1988-04-15 | 1998-07-16 | 株式会社日立製作所 | 半導体装置およびその製造方法 |
JP2671397B2 (ja) * | 1988-07-01 | 1997-10-29 | 住友化学工業株式会社 | マグネトロンスパッタリング用ターゲット |
US4829024A (en) * | 1988-09-02 | 1989-05-09 | Motorola, Inc. | Method of forming layered polysilicon filled contact by doping sensitive endpoint etching |
-
1991
- 1991-10-09 DE DE69102851T patent/DE69102851T2/de not_active Expired - Fee Related
- 1991-10-09 KR KR1019910017666A patent/KR950009278B1/ko not_active IP Right Cessation
- 1991-10-09 EP EP91117237A patent/EP0480409B1/en not_active Expired - Lifetime
- 1991-10-09 US US07/773,420 patent/US5155063A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE69102851D1 (de) | 1994-08-18 |
DE69102851T2 (de) | 1995-02-16 |
KR950009278B1 (ko) | 1995-08-18 |
EP0480409B1 (en) | 1994-07-13 |
EP0480409A1 (en) | 1992-04-15 |
US5155063A (en) | 1992-10-13 |
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Payment date: 20030807 Year of fee payment: 9 |
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