KR980003732A - 액정표시소자의 제조방법 - Google Patents

액정표시소자의 제조방법 Download PDF

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Publication number
KR980003732A
KR980003732A KR1019960020811A KR19960020811A KR980003732A KR 980003732 A KR980003732 A KR 980003732A KR 1019960020811 A KR1019960020811 A KR 1019960020811A KR 19960020811 A KR19960020811 A KR 19960020811A KR 980003732 A KR980003732 A KR 980003732A
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forming
layer
insulating layer
semiconductor layer
gate electrode
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KR1019960020811A
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KR100205373B1 (ko
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김홍규
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구자홍
Lg 전자주식회사
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Priority to KR1019960020811A priority Critical patent/KR100205373B1/ko
Priority to US08/872,198 priority patent/US6031589A/en
Priority to JP9153570A priority patent/JPH1062819A/ja
Publication of KR980003732A publication Critical patent/KR980003732A/ko
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Nonlinear Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)

Abstract

본 발명은 액정표지소자에 관한 것으로, 특히 스토리지 커패시터(Storage Capacitor) 부분을 투명하게 형성하여 개구율을 향상시키는데 적당하도록 한 액정표시소자의 제조방법에 관한 것이다.
이를 위한 본 발명의 액정표시소자의 제조방법은 기판상의 소정영역에 일정간격을 두고 복수개의 제1반도체층과 제2반도체층을 형성하는 공정; 상기 제1, 제2반도체층을 포함한 기판상에 제1절연층을 형성하고 상기 제2반도체층에만 제1불순물 이온을 주입하는 공정; 상기 제1절연층을 선택적으로 제거하여 상기 제2반도체층과 공통전극과의 전기적 연결을 위한 제1콘택홀을 형성하는 공정; 상기 제1콘택홀을 포함한 전면에 제1도전층을 형성한 후 패너닝하여 제1게이트 전극과 상기 제2반도체층과의공통전극과의 전기적 연결을 위한 전극라인을 형성하는 공정; 상기 제1게이트 전극을 마스크로 한 제2불순물 이온을 주입하여 제1반도체층에 소오스/드레인영역을 형성한 후 제1절연층을 통해 상기 드레인 영역의 제1반도체층과 연결되도록 투명한 화소전극 물질을 중착한 후 패터닝 하여 화소전극을 형성하는 공정; 상기 화소전극을 포함한 전면에 제2절연층을 형성한 후 제2절연층을 통해 상기 제1게이트 전극과 연결되도록 제2게이트 전극물질을 중착한 후 패터닝 하여 제2게이트 전극라인을 형성하는 공정; 상기 제2게이트 전극라인을 포하한 전면에 제3절연층을 형성한 후 제3절연층을 통해 상기 소오스 영역의 제1반도체층과 연결되도록 금속층을 형성하고 패터닝 하는 공정; 상기 금속층을 포함한 전면에 보호막을 증착하는 공정을 포함하여 형성됨을 특징으로 한다.

Description

액정표시소자의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도 a,b도는 본 발명의 액정표시소자의 레이아웃도 및 그에 따른 회로구성도.
제4도 a내지 h는 제3도 a의 A-A′선에 따른 공정단면도.
제4도 i내지 p는 제3도 a의 B-B′선에 따른 공정단면도.
제4도 q내지 t는 제3도 a의 C-C′선에 따른 공정단면도.

Claims (4)

  1. 기판상의 소정영역에 일정간격을 두고 복수개의 제1반도체층과 제2반도체층을 형성하는 공정; 상기 제1, 제2반도체층을 포함한 기판상에 제1절연층을 형성하고 상기 제2반도체층에만 제1불순물 이온을 주입하는 공정; 상기 제1절연층을 선택적으로 제거하여 상기 제2반도체층가 공통전극과의 전기적 연결을 위한 제1콘택홀을 형성하는 공정; 상기 제1콘택홀을 포함한 전면에 제1도전층을 형성한 후 패너닝하여 제1게이트 전극과 상기 제2반도체층과의 공통전극과의 전기적 연결을 위한 전극라인을 형성하는 공정; 상기 제1게이트 전극을 마스크로 한 제2불순물 이온을 주입하여 제1반도체층에 소오스/드레인 영역을 형성한 후 제1절연층을 통해 상기 드레인 영역의 제1반도체층과 연결되도록 투명한 화소전극 물질을 중착한 후 패터닝 하여 화소전극을 형성하는 공정; 상기 화소전극을 포함한 전면에 제2절연층을 형성한 후 제2절연층을 통해 상기 제1게이트 전극과 연결되도록 제2게이트 전극 물질을 중착한 후 패터닝 하여 제2게이트 전국라인을 형성하는 공정; 상기 제2게이트 전국라인을 포함한 전면에 제3절연층을 형성한 후 제3절연층을 통해 상기 소오스 영역의 제3반도체층과 연결되도록 금속층을 형성하고 패터닝하는 공정; 상기 금속층을 포함한 전면에 보호막을 중착하는 공정을 포함하여 형성됨을 특징으로 하는 액정표시소자의 제조방법.
  2. 제1항에 있어서, 상기 제2반도체층은 커패시터 하부전극으로 이용함을 특징으로 하는 액정표시소자의 제조방법.
  3. 제1항에 있어서, 상기 제1도전층은 B 또는 P이온이 주입된 다결정 실리콘임을 특징으로 하는 액정표시소자의 제조방법.
  4. 제1항에 있어서, 상기 제2게이트 전극물질은 알루미늄(Al) 또는 알루미늄 계통의 일반금속 물질임을 특징으로 하는 액정표시소자의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960020811A 1996-06-11 1996-06-11 액정표시소자의 제조방법 KR100205373B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1019960020811A KR100205373B1 (ko) 1996-06-11 1996-06-11 액정표시소자의 제조방법
US08/872,198 US6031589A (en) 1996-06-11 1997-06-10 Liquid crystal display device and the fabrication method thereof
JP9153570A JPH1062819A (ja) 1996-06-11 1997-06-11 液晶表示装置及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960020811A KR100205373B1 (ko) 1996-06-11 1996-06-11 액정표시소자의 제조방법

Publications (2)

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KR980003732A true KR980003732A (ko) 1998-03-30
KR100205373B1 KR100205373B1 (ko) 1999-07-01

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US (1) US6031589A (ko)
JP (1) JPH1062819A (ko)
KR (1) KR100205373B1 (ko)

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KR100437825B1 (ko) * 2001-07-06 2004-06-26 엘지.필립스 엘시디 주식회사 액정표시장치용 어레이기판
KR100485506B1 (ko) * 2000-08-11 2005-04-28 엔이씨 엘씨디 테크놀로지스, 엘티디. 액정 디스플레이 장치 및 그 제조 방법
KR100583705B1 (ko) * 2001-10-15 2006-05-26 가부시키가이샤 히타치세이사쿠쇼 액정 표시 장치, 화상 표시 장치 및 그 제조 방법

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US7023021B2 (en) 2000-02-22 2006-04-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
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JP4496600B2 (ja) * 2000-04-24 2010-07-07 セイコーエプソン株式会社 電気光学装置及びプロジェクタ
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JP2003045874A (ja) 2001-07-27 2003-02-14 Semiconductor Energy Lab Co Ltd 金属配線およびその作製方法、並びに金属配線基板およびその作製方法
KR100493380B1 (ko) * 2001-12-28 2005-06-07 엘지.필립스 엘시디 주식회사 액정표시장치의 제조방법
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KR100437825B1 (ko) * 2001-07-06 2004-06-26 엘지.필립스 엘시디 주식회사 액정표시장치용 어레이기판
KR100583705B1 (ko) * 2001-10-15 2006-05-26 가부시키가이샤 히타치세이사쿠쇼 액정 표시 장치, 화상 표시 장치 및 그 제조 방법

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