KR960001843A - 액정표시장치 및 그 제조방법 - Google Patents

액정표시장치 및 그 제조방법 Download PDF

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KR960001843A
KR960001843A KR1019940013785A KR19940013785A KR960001843A KR 960001843 A KR960001843 A KR 960001843A KR 1019940013785 A KR1019940013785 A KR 1019940013785A KR 19940013785 A KR19940013785 A KR 19940013785A KR 960001843 A KR960001843 A KR 960001843A
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South Korea
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insulating
electrode
insulating layer
storage electrode
layer
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KR1019940013785A
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English (en)
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KR0141774B1 (ko
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장석필
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이헌조
엘지전자 주식회사
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Priority to KR1019940013785A priority Critical patent/KR0141774B1/ko
Priority to JP16937495A priority patent/JPH0854649A/ja
Priority to US08/490,059 priority patent/US5734449A/en
Publication of KR960001843A publication Critical patent/KR960001843A/ko
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Publication of KR0141774B1 publication Critical patent/KR0141774B1/ko

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    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136213Storage capacitors associated with the pixel electrode
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136209Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1343Electrodes
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136227Through-hole connection of the pixel electrode to the active element through an insulation layer
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/1368Active matrix addressed cells in which the switching element is a three-electrode device
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509Filters, e.g. light shielding masks
    • G02F1/133512Light shielding layers, e.g. black matrix

Abstract

본 발명은 액정표시장치의 제조방법에 관한 것으로, 절연기판 위에 형성된 하부 스토리지 전극과, 상기 하부 스토리지 전극을 상부 스토리지 전극과 절연시키기 위한 제1절연막 및 제2절연막과, 상기 제2절연막위에 증착된 도전물질을 패터닝한 상부 스토리지 전극과, 상기 상부 스토리지 전극을 상부 구조물과 절연시키기 위한 제3절연막과, 상기 제3절연막 상부의 화소전극으로 구성된 스토리지 캐패시터부를 포함하여 구성되도록 함으로써 스토리지 전극을 상,하 이중으로 하여 동일한 셀에서 차지하는 스토리지 캐패시터부의 면적을 줄이면서도 필요한 케패시턴스를 제공할 수 있기 때문에 액정표시장치의 화면 밝기를 향상시키고 동일한 화면 밝기로 화소수를 증가시킴으로써 화질을 개선할 수 있는 효과가 있다.

Description

액정표시장치 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 종래의 기술에 의한 액정표시장치의 단면도,
제2도는 종래의 기술에 의한 픽셀부의 등가회로도,
제3도는 본 발명에 의한 액정표시장치의 단면도,
제4도는 본 발명에 의한 픽셀부의 등가회로도,
제5도는 본 발명에 의한 액정표시장치의 제조방법을 도시한 공정순서도.

Claims (4)

  1. 절연기판 위의 순차적으로 적층된 블랙매트릭스 및 제1절연막과, 상기 제1절연막 상부에 증착된 반도체를 패터닝한 활성층과, 상기 활성층과 게이트 전극을 절연시키기 위한 제2절연막과, 상기 제2절연막 위에 증착된 도전물질을 패터닝한 게이트 전극과, 상기 게이트 전극을 상부구조물과 절연시키기 위한 제3절연막과, 상기 제2 및 제3절연막의 식각된 부분을 통하여 상기 활성층과 접하는 소스/드레인 전극으로 구성된 박막트랜지스터부와, 상기와 동일한 기판 위에 형성된 하부 스토리지 전극과, 상기 하부 스토리지 전극을 상부 스토리지 전극과 절연시키기 위한 제1절연막 및 제2절연막과, 상기 제2절연막 위에 증착된 도전물질을 패터닝한 상부 스토리지 전극과, 상기 상부 스토리지 전극을 상부 구조물과 절연시키기 위한 제3절연막과, 상기 제3절연막 상부의 화소전극으로 구성된 스토리지 캐패시터부를 포함하여 구성된 것을 특징으로 하는 액정표시장치.
  2. 절연기판 위에 빛을 차단하며 도전성이 있는 물질을 증착시켜 박마트랜지스터부의 블랙매트릭스와 스토리지 캐패시터부의 하부 스토리지 전극을 동시에 형성하는 과정과, 상기 블랙매트릭스와 하부 스토리지 전극 위에 제1절연막을 형성하는 과정과, 상기 제1절연막 위에 반도체 물질을 증착시킨후 패터닝하여 박막트랜지스터부에 활성층을 형성하는 과정과, 상기 활성층 형성 후 겨로가물 전면에 제2절연막을 형성하는 과정과, 상기 제2절연막 위에 도전물질을 증착시킨 후 패터닝하여 박막트랜지스터부의 게이트 전극과 스토리지 캐패시터부의 상부 스토리지 전극을 형성한 후 게이트 전극을 마스크로하여 N형 또는 P형의 도펀트를 주입시키고 활성화시켜 소스/드레인 영역을 형성하는 과정과, 상기 게이트 전극 및 상부 스토리지 전극 형성 후 결과물 전면에 제3절연막을 형성하는 과정과, 상기 스토리지 캐패시터부의 제3절연막 위에 화소전극을 형성하는 과정과, 상기 제2 및 제3절연막을 선택적으로 식각하여 활성층과 하부 스토리지전극을 노출시켜 콘택홀을 형성한 후 결과물 전면에 도전물질을 증착시키고 패터닝하여 상기 하부 스토리지 전극과 화소전극을 연결함과 동시에 상기 콘택홀을 통하여 상기 활성층과 접하는 소스/드레인 전극을 형성하는 과정을 포함하여 구성된 것을 특징으로 하는 액정표시장치의 제조방법.
  3. 제2항에 있어서, 상기 활성층 형성시 제1절연막의 상부영역을 과도식각하는 과정을 포함하여 구성된 것을 특징으로 하는 액정표시장치의 제조방법.
  4. 제2항에 있어서, 상기 게이트 전극 및 상부 스토리지 전극 형성시 상기 제2절연막의 상부영역을 과도식각하는 과정을 포함하여 구성된 것을 특징으로 하는 액정표시장치의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940013785A 1994-06-17 1994-06-17 액정표시장치 및 그 제조방법 KR0141774B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1019940013785A KR0141774B1 (ko) 1994-06-17 1994-06-17 액정표시장치 및 그 제조방법
JP16937495A JPH0854649A (ja) 1994-06-17 1995-06-13 液晶表示装置及びその製造方法
US08/490,059 US5734449A (en) 1994-06-17 1995-06-13 Liquid crystal display apparatus having an opaque conductive capacitor electrode and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940013785A KR0141774B1 (ko) 1994-06-17 1994-06-17 액정표시장치 및 그 제조방법

Publications (2)

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KR960001843A true KR960001843A (ko) 1996-01-25
KR0141774B1 KR0141774B1 (ko) 1998-06-15

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US (1) US5734449A (ko)
JP (1) JPH0854649A (ko)
KR (1) KR0141774B1 (ko)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100249222B1 (ko) * 1997-04-11 2000-03-15 구자홍 액정표시장치및그제조방법
KR100265567B1 (ko) * 1997-12-29 2000-09-15 김영환 액정표시소자및그의제조방법
KR100419086B1 (ko) * 1996-04-12 2004-05-20 삼성전자주식회사 박막트랜지스터액정표시장치

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3433779B2 (ja) * 1996-06-19 2003-08-04 シャープ株式会社 アクティブマトリクス基板およびその製造方法
KR100226494B1 (ko) * 1997-02-20 1999-10-15 김영환 액정표시장치 및 그 제조방법
KR20000038298A (ko) * 1998-12-05 2000-07-05 구본준 이미지소자, 센서박막트랜지스터와 그 제조방법.
GB9928353D0 (en) * 1999-12-01 2000-01-26 Koninkl Philips Electronics Nv Liquid crystal display and method of manufacture
KR100654159B1 (ko) * 2000-02-10 2006-12-05 엘지.필립스 엘시디 주식회사 반사형 액정 표시장치 및 그 제조방법
KR100635042B1 (ko) * 2001-12-14 2006-10-17 삼성에스디아이 주식회사 전면전극을 구비한 평판표시장치 및 그의 제조방법
US6853052B2 (en) * 2002-03-26 2005-02-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a buffer layer against stress
KR100480310B1 (ko) * 2002-09-24 2005-04-07 한국전자통신연구원 2 층 충전기를 갖는 디스플레이 픽셀 및 그 제조방법
TWI262344B (en) * 2004-02-27 2006-09-21 Au Optronics Corp Pixel structure and fabricating method thereof
KR101112539B1 (ko) * 2004-07-27 2012-02-15 삼성전자주식회사 다중 도메인 액정 표시 장치 및 그에 사용되는 표시판
KR101112543B1 (ko) * 2004-11-04 2012-03-13 삼성전자주식회사 다중 도메인 박막 트랜지스터 표시판
KR101112549B1 (ko) 2005-01-31 2012-06-12 삼성전자주식회사 박막 트랜지스터 표시판
KR20060111265A (ko) * 2005-04-22 2006-10-26 삼성전자주식회사 박막 트랜지스터 기판, 이의 제조 방법 및 이를 갖는 표시장치
US7286192B2 (en) * 2005-06-07 2007-10-23 Au Optronics Corporation Transflective liquid crystal display
TWI316763B (en) * 2006-12-01 2009-11-01 Au Optronics Corp Lcd pixel array structure and fabrication method thereof
TWI329909B (en) * 2007-03-16 2010-09-01 Au Optronics Corp Pixel structure of lcd and fabrication method thereof
TWI351764B (en) * 2007-04-03 2011-11-01 Au Optronics Corp Pixel structure and method for forming the same
TWI354377B (en) * 2007-05-30 2011-12-11 Au Optronics Corp Pixel structure of lcd and fabrication method ther
CN105679765A (zh) * 2016-01-12 2016-06-15 武汉华星光电技术有限公司 Tft阵列基板结构

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6045219A (ja) * 1983-08-23 1985-03-11 Toshiba Corp アクテイブマトリクス型表示装置
US5012274A (en) * 1987-12-31 1991-04-30 Eugene Dolgoff Active matrix LCD image projection system
JPH0814669B2 (ja) * 1988-04-20 1996-02-14 シャープ株式会社 マトリクス型表示装置
JP2616160B2 (ja) * 1990-06-25 1997-06-04 日本電気株式会社 薄膜電界効果型トランジスタ素子アレイ
US5245450A (en) * 1990-07-23 1993-09-14 Hosiden Corporation Liquid crystal display device with control capacitors for gray-scale
EP0592063A3 (en) * 1992-09-14 1994-07-13 Toshiba Kk Active matrix liquid crystal display device
US5657101A (en) * 1995-12-15 1997-08-12 Industrial Technology Research Institute LCD having a thin film capacitor with two lower capacitor electrodes and a pixel electrode serving as an upper electrode

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100419086B1 (ko) * 1996-04-12 2004-05-20 삼성전자주식회사 박막트랜지스터액정표시장치
KR100249222B1 (ko) * 1997-04-11 2000-03-15 구자홍 액정표시장치및그제조방법
KR100265567B1 (ko) * 1997-12-29 2000-09-15 김영환 액정표시소자및그의제조방법

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KR0141774B1 (ko) 1998-06-15
US5734449A (en) 1998-03-31

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