CN105679765A - Tft阵列基板结构 - Google Patents

Tft阵列基板结构 Download PDF

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CN105679765A
CN105679765A CN201610019481.XA CN201610019481A CN105679765A CN 105679765 A CN105679765 A CN 105679765A CN 201610019481 A CN201610019481 A CN 201610019481A CN 105679765 A CN105679765 A CN 105679765A
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layer
electrode
tft
metal light
array substrate
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赵瑜
张占东
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Wuhan China Star Optoelectronics Technology Co Ltd
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Wuhan China Star Optoelectronics Technology Co Ltd
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Priority to US15/084,497 priority patent/US9647009B1/en
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Abstract

本发明提供一种TFT阵列基板结构，其图案化的金属遮光层(100)包括数个呈阵列式排布的金属遮光块(101)、及连接相邻两金属遮光块(101)的金属窄条(102)，并将金属遮光层(100)与公共电极(60)均接入公共电压信号(COM)；针对每一TFT(90)，由于像素电极(80)与TFT(90)的漏极(92)相接触，像素电极(80)与公共电极(60)相对重叠的部分构成第一存储电容(Cst1)，金属遮光层(100)与漏极(92)及像素电极(80)相对重叠的部分构成第二存储电容(Cst2)，所述第一存储电容(Cst1)与第二存储电容(Cst2)形成并联关系，能够增加存储电容的容量；且金属遮光层(100)本身就位于遮光区域，对金属遮光层(100)的改进不会影响开口率。

Description

TFT阵列基板结构
技术领域
本发明涉及显示技术领域，尤其涉及一种TFT阵列基板结构。
背景技术
液晶显示器(LiquidCrystalDisplay，LCD)具有机身薄、省电、无辐射等众多优点，得到了广泛的应用，如：液晶电视、移动电话、个人数字助理(PDA)、数字相机、计算机屏幕或笔记本电脑屏幕等，在平板显示领域中占主导地位。
现有市场上的液晶显示器大部分为背光型液晶显示器，其包括液晶显示面板及背光模组(backlightmodule)。液晶显示面板的工作原理是在薄膜晶体管阵列基板(ThinFilmTransistorArraySubstrate，TFTArraySubstrate)与彩色滤光片基板(ColorFilter，CF)之间灌入液晶分子，并在两片基板上施加驱动电压来控制液晶分子的旋转方向，以将背光模组的光线折射出来产生画面。
TFT阵列基板包括多条栅极线和数据线，相互垂直的多条栅极线和多条数据线形成了多个像素单元，且每个像素单元内均设置有薄膜晶体管(ThinFilmTransistor，TFT)、像素电极及存储电容等。TFT包括一栅极连接至栅极线，源极连接至数据线，漏极连接至像素电极。当栅极线被驱动时，TFT处于导通状态，对应的数据线送入灰阶电压信号并将其加载至像素电极，从而使得像素电极与公共电极之间产生相应的电场，液晶层中的液晶分子则在电场的作用下发生取向变化，因此可以实现不同的图像显示。
存储电容在TFT阵列基板中起到保持电位、及降低耦合电容分压等重要作用。现有的TFT阵列基板通常通过公共电极与像素电极的重叠部分来构成存储电容，存储电容的存储容量较小，无法满足高品质的显示面板的需求，通过增大公共电极与像素电极的重叠部分的面积的方式来增大存储电容容量，则会降低面板的开口率。
另外，现有的TFT阵列基板中设置有多个各自独立的块状遮光层，仅起到遮挡TFT的半导体层的沟道区域，防止因光电效应导致沟道区域产生光生载流子造成TFT性能下降的作用。
发明内容
本发明的目的在于提供一种TFT阵列基板结构，能够在不降低开口率的前提下，增加存储电容的容量，提升显示器性能，提高产品竞争力。
为实现上述目的，本发明提供了一种TFT阵列基板结构，包括：衬底基板、设于所述衬底基板上图案化的金属遮光层、覆盖所述图案化的金属遮光层的第一绝缘层、设于所述第一绝缘层上的数个呈阵列式排布的TFT、覆盖所述TFT的平坦层、设于所述平坦层上的公共电极、覆盖所述公共电极的保护层、及设于所述保护层上的图案化的像素电极；
所述TFT包括：设于所述第一绝缘层上的半导体层、覆盖所述半导体层的栅极绝缘层、于所述半导体层上方设于所述栅极绝缘层上的栅极、设于所述栅极与栅极绝缘层上的层间介电层、以及设于所述层间介电层上的源极和漏极；
所述图案化的金属遮光层包括数个呈阵列式排布的金属遮光块、及连接相邻两金属遮光块的金属窄条；一金属遮光块对应设置于一半导体层的下方；
所述金属遮光层与所述公共电极均接入公共电压信号，所述像素电极与所述TFT的漏极相接触；
针对每一TFT，所述像素电极与所述公共电极相对重叠的部分构成第一存储电容，所述金属遮光层与所述漏极及像素电极相对重叠的部分构成第二存储电容，所述第一存储电容与第二存储电容并联。
所述半导体层包括位于中间的多晶硅沟道区和位于两端的接触区，以及夹在多晶硅沟道区与接触区之间的轻掺杂区。
一金属遮光块对应遮挡一多晶硅沟道区。
所述源极和漏极分别通过贯穿层间介电层及栅极绝缘层的过孔与所述半导体层两端的接触区相接触。
所述像素电极通过贯穿所述保护层、公共电极、及平坦层的过孔与所述漏极相接触。
所述金属遮光层的材料为钼或钛。
所述第一绝缘层包括自下而上层叠设置的第一氮化硅层、及第一氧化硅层。
所述层间介电层包括自下而上层叠设置的第二氧化硅层、及第二氮化硅层。
所述保护层的材料为氮化硅；
所述栅极的材料为钼，所述源极和漏极的材料为两层钼夹一层铝。
所述像素电极与公共电极的材料均为ITO。
所述衬底基板为玻璃基板。
本发明的有益效果：本发明提供的一种TFT阵列基板结构，其图案化的金属遮光层包括数个呈阵列式排布的金属遮光块、及连接相邻两金属遮光块的金属窄条，并将金属遮光层与公共电极均接入公共电压信号；针对每一TFT，由于像素电极与TFT的漏极相接触，所述像素电极与所述公共电极相对重叠的部分构成第一存储电容，所述金属遮光层与所述漏极及像素电极相对重叠的部分构成第二存储电容，所述第一存储电容与第二存储电容形成并联关系，能够增加存储电容的容量；且由于金属遮光层本来就是为遮光设计，本身就位于应遮光的区域，对金属遮光层的改进不会影响开口率，从而实现了在不降低开口率的前提下增加存储电容的容量，提升显示面板的性能，提高产品竞争力。
附图说明
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图中，
图1为本发明的TFT阵列基板结构的剖视示意图；
图2为本发明的TFT阵列基板结构中金属遮光层的俯视示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请同时参阅图1与图2，本发明提供一种TFT阵列基板结构，包括：衬底基板10、设于所述衬底基板10上图案化的金属遮光层100、覆盖所述图案化的金属遮光层100的第一绝缘层20、设于所述第一绝缘层20上的数个呈阵列式排布的TFT90、覆盖所述TFT90的平坦层50、设于所述平坦层50上的公共电极60、覆盖所述公共电极60的保护层70、及设于所述保护层70上的图案化的像素电极80。
所述TFT90包括：设于所述第一绝缘层20上的半导体层94、覆盖所述半导体层94的栅极绝缘层30、于所述半导体层94上方设于所述栅极绝缘层30上的栅极93、设于所述栅极93与栅极绝缘层30上的层间介电层40、以及设于所述层间介电层40上的源极91和漏极92。
所述图案化的金属遮光层100包括数个呈阵列式排布的金属遮光块101、及连接相邻两金属遮光块101的金属窄条102，一金属遮光块101对应设置于一半导体层94的下方。所述图案化的金属遮光层100通过对钼或钛等金属膜层进行蚀刻形成。
所述金属遮光层100与所述公共电极60均接入公共电压信号COM，所述像素电极80与所述TFT90的漏极92相接触，形成电性连接。
针对每一TFT90，所述像素电极80与所述公共电极60相对重叠的部分构成第一存储电容Cst1，所述金属遮光层100与所述漏极92及像素电极80相对重叠的部分构成第二存储电容Cst2。由于所述像素电极80与所述TFT90的漏极92形成电性连接，第一存储电容Cst1与第二存储电容Cst2形成并联关系。
所述第一存储电容Cst1与第二存储电容Cst2并联构成TFT阵列基板的存储电容，该存储电容的容量等于第一存储电容Cst1与第二存储电容Cst2的容量之和，相比于现有技术，增加了第二存储电容Cst2，大大增加了存储电容的容量，且由于金属遮光层100本来就是为遮光设计，本身就位于应遮光的区域，对金属遮光层100的改进不会影响开口率，从而实现了在不降低开口率的前提下增加存储电容的容量，提升显示面板的性能，提高产品竞争力。
具体地，所述半导体层94包括位于中间的多晶硅沟道区和位于两端的接触区，以及夹在多晶硅沟道区与接触区之间的轻掺杂区。一金属遮光块101对应遮挡一多晶硅沟道区，所述栅极93位于所述多晶硅沟道区的正上方。
所述源极91和漏极92分别通过贯穿层间介电层40及栅极绝缘层30的过孔与所述半导体层94两端的接触区相接触。
所述像素电极80通过贯穿所述保护层70、公共电极60、及平坦层50的过孔81与所述漏极92相接触。
进一步地，所述衬底基板10为玻璃基板；所述金属遮光层100的材料为钼(Mo)或钛(Ti)；所述第一绝缘层20包括自下而上层叠设置的第一氮化硅(SiNx)层21、及第一氧化硅(SiOx)层22；所述层间介电层40包括自下而上层叠设置的第二氧化硅层41、及第二氮化硅层42；所述保护层70的材料为氮化硅；所述栅极94的材料为钼，所述源极91和漏极92的材料为两层钼夹一层铝(Al)；所述像素电极80与公共电极60的材料均为氧化铟锡(IndiumTinOxide，ITO)透明导电薄膜。
综上所述，本发明的TFT阵列基板结构，其图案化的金属遮光层包括数个呈阵列式排布的金属遮光块、及连接相邻两金属遮光块的金属窄条，并将金属遮光层与公共电极均接入公共电压信号；针对每一TFT，由于像素电极与TFT的漏极相接触，所述像素电极与所述公共电极相对重叠的部分构成第一存储电容，所述金属遮光层与所述漏极及像素电极相对重叠的部分构成第二存储电容，所述第一存储电容与第二存储电容形成并联关系，能够增加存储电容的容量；且由于金属遮光层本来就是为遮光设计，本身就位于应遮光的区域，对金属遮光层的改进不会影响开口率，从而实现了在不降低开口率的前提下增加存储电容的容量，提升显示面板的性能，提高产品竞争力。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (10)

1.一种TFT阵列基板结构，其特征在于，包括：衬底基板(10)、设于所述衬底基板(10)上图案化的金属遮光层(100)、覆盖所述图案化的金属遮光层(100)的第一绝缘层(20)、设于所述第一绝缘层(20)上的数个呈阵列式排布的TFT(90)、覆盖所述TFT(90)的平坦层(50)、设于所述平坦层(50)上的公共电极(60)、覆盖所述公共电极(60)的保护层(70)、及设于所述保护层(70)上的图案化的像素电极(80)；
所述TFT(90)包括：设于所述第一绝缘层(20)上的半导体层(94)、覆盖所述半导体层(94)的栅极绝缘层(30)、于所述半导体层(94)上方设于所述栅极绝缘层(30)上的栅极(93)、设于所述栅极(93)与栅极绝缘层(30)上的层间介电层(40)、以及设于所述层间介电层(40)上的源极(91)和漏极(92)；
所述图案化的金属遮光层(100)包括数个呈阵列式排布的金属遮光块(101)、及连接相邻两金属遮光块(101)的金属窄条(102)；一金属遮光块(101)对应设置于一半导体层(94)的下方；
所述金属遮光层(100)与所述公共电极(60)均接入公共电压信号(COM)，所述像素电极(80)与所述TFT(90)的漏极(92)相接触；
针对每一TFT(90)，所述像素电极(80)与所述公共电极(60)相对重叠的部分构成第一存储电容(Cst1)，所述金属遮光层(100)与所述漏极(92)及像素电极(80)相对重叠的部分构成第二存储电容(Cst2)，所述第一存储电容(Cst1)与第二存储电容(Cst2)并联。
2.如权利要求1所述的TFT阵列基板结构，其特征在于，所述半导体层(94)包括位于中间的多晶硅沟道区和位于两端的接触区，以及夹在多晶硅沟道区与接触区之间的轻掺杂区。
3.如权利要求2所述的TFT阵列基板结构，其特征在于，一金属遮光块(101)对应遮挡一多晶硅沟道区。
4.如权利要求2所述的TFT阵列基板结构，其特征在于，所述源极(91)和漏极(92)分别通过贯穿层间介电层(40)及栅极绝缘层(30)的过孔与所述半导体层(94)两端的接触区相接触。
5.如权利要求1所述的TFT阵列基板结构，其特征在于，所述像素电极(80)通过贯穿所述保护层(70)、公共电极(60)、及平坦层(50)的过孔(81)与所述漏极(92)相接触。
6.如权利要求1所述的TFT阵列基板结构，其特征在于，所述金属遮光层(100)的材料为钼或钛。
7.如权利要求1所述的TFT阵列基板结构，其特征在于，所述第一绝缘层(20)包括自下而上层叠设置的第一氮化硅层(21)、及第一氧化硅层(22)；
所述层间介电层(40)包括自下而上层叠设置的第二氧化硅层(41)、及第二氮化硅层(42)。
8.如权利要求1所述的TFT阵列基板结构，其特征在于，所述保护层(70)的材料为氮化硅；
所述栅极(94)的材料为钼，所述源极(91)和漏极(92)的材料为两层钼夹一层铝。
9.如权利要求1所述的TFT阵列基板结构，其特征在于，所述像素电极(80)与公共电极(60)的材料均为ITO。
10.如权利要求1所述的TFT阵列基板结构，其特征在于，所述衬底基板(10)为玻璃基板。
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