CN102608816A - 液晶显示面板以及其制造方法 - Google Patents
液晶显示面板以及其制造方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title abstract description 9
- 239000004973 liquid crystal related substance Substances 0.000 title abstract description 5
- 229910052751 metal Inorganic materials 0.000 claims description 29
- 239000002184 metal Substances 0.000 claims description 29
- 239000011521 glass Substances 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 23
- 238000005530 etching Methods 0.000 claims description 15
- 238000009413 insulation Methods 0.000 claims description 15
- 230000001681 protective effect Effects 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 7
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical group O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 5
- 230000005540 biological transmission Effects 0.000 claims description 2
- 239000003990 capacitor Substances 0.000 abstract 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 15
- 238000010586 diagram Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
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Abstract
本发明公开一种液晶显示面板和其制造方法,本发明的液晶显示面板以及其制造方法将作为存储电容的电极的下电极片设置到扫描线和控制电压线之间,而作为作为存储电容的另一电极的第一导电区以及第二导电区则采用透明导电层。因此形成存储电容的位置是位于扫描线和控制信号线之间,使得第二子像素电极有更大的布局空间,因此可以增加第二子像素电极的开口率。
Description
技术领域
本发明涉及一种液晶显示面板以及其制造方法,特别是涉及一种可以增加像素开口率但不降低存储电容值的液晶显示面板以及其制造方法。
背景技术
功能先进的显示器渐成为现今消费电子产品的重要特色,其中液晶显示器已经逐渐成为各种电子设备如电视、行动电话、个人数字助理(PDA)、数字相机、计算机屏幕或笔记型计算机屏幕所广泛应用具有高分辨率彩色屏幕的显示器。
晶体管液晶显示器由于具有高画质、空间利用效率佳、低消耗功率、无辐射等优越特性,因而已逐渐成为市场之主流。目前,市场对于液晶显示器的性能要求是朝向高对比度(High Contrast Ratio)、快速反应与大视角等特性。
但是当使用者在大视角下观看液晶面板时,画面显示的色彩会偏离其原本应该呈现出来的色彩,而使观看到的画面失真。为了解决降低色偏的影响,目前有许多种类的像素结构被开发出来。请参阅图1,图1是一种可以降低色偏的像素的设计图。像素10采用了两子像素电极11、12的设计。传统的像素10的存储电容17是设置在子像素电极12和控制电压线16之间,因此使得子像素电极12的开口率受到影响。
发明内容
因此,本发明的目的是提供一种液晶显示面板和其制造方法,将存储电容设置在扫描线和控制电压线之间,所提高开口率,以解决现有技术的问题。
根据本发明的实施例,本发明揭露一种液晶显示面板,其包含一扫描线,由一第一金属层构成且位于所述玻璃基板上,用于传输一扫描信号;一控制电压线,由所述第一金属层构成且位于所述玻璃基板上,用来传输一控制信号;一绝缘层,位于所述扫描线和所述控制电压线之上;一数据线,由一第二金属层构成且位于所述绝缘层之上,用于传输一数据信号;一第一晶体管,电性连接于所述第一子像素电极;一第二晶体管,电性连接于所述控制电压线和所述第一晶体管;一第一子像素电极以及一第二子像素电极,皆由一透明导电层形成,所述第二子像素电极包含一第一导电区;一共通电极,由所述第一金属层构成且位于所述玻璃基板上,用来传输一共通信号;一第二导电区,由所述透明导电层形成,电性连接所述共通电极;一下电极片,由所述第二金属层构成且位于所述绝缘层之上且位于所述扫描线以及所述控制电压线之间,所述下电极片电性连接第二晶体管;及一第一存储电容以及一第二存储电容,所述第一存储电容是由所述下电极片以及所述第二子像素电极的所述第一导电区组成,所述第二存储电容是由所述下电极片以及所述第二导电区组成。
根据本发明的实施例,所述液晶显示面板另包含:一保护层,位于所述第二金属层之上;一第一开孔,开设于所述保护层中且位在所述扫描线和所述控制电压线之间,使得所述第一子像素电极通过所述第一开孔与所述第一晶体管电性连接;以及一第二开孔,贯穿所述保护层和所述绝缘层,且位在所述控制电压线和所述第二子像素电极之间,使得所述共通电极通过所述第二开孔与所述第二导电区电性连接。
根据本发明的实施例,所述第一存储电容和所述第二存储电容投射于所述玻璃基板的位置,是位于所述扫描线和所述控制电压线投射于所述玻璃基板的位置之间。
根据本发明的实施例,所述透明导电层的材料是氧化铟锡。
根据本发明的实施例,所述第一晶体管、所述第二晶体管、所述扫描线和所述控制电压线位于所述第一子像素电极以及所述第二子像素电极之间。
本发明又揭示一种液晶显示面板的制造方法,所述制造方法包含:提供一玻璃基板;形成一第一金属层于所述玻璃基板上;蚀刻所述第一金属层,以形成一第一晶体管的栅极、一第二晶体管的栅极、一控制电压线、一共通电压线以及一扫描线;在所述第一晶体管的栅极、所述第二晶体管的栅极、所述控制电压线、所述共通电压线以及所述扫描线上形成一绝缘层;形成一第二金属层,并蚀刻所述第二金属层,以形成所述第一晶体管的源极和漏极、所述第二晶体管的源极和漏极、一下电极片以及一数据线,所述下电极片与所述第二晶体管的漏极电性连接,且位于所述控制电压线和所述扫描线之间;形成一保护层于所述第二金属层之上;蚀刻所述保护层以形成一第一开孔和一第二开孔;形成一透明导电层,并蚀刻所述透明导电层以形成一第一子像素电极、一第二子像素电极以及一第二导电区,所述第二子像素电极包含一第一导电区,其中所述第一子像素电极通过所述第一开孔与所述晶体管电性连接,所述共通电极通过所述第二开孔与所述第二导电区电性连接,所述下电极片以及所述第二子像素电极的所述第一导电区形成一第一存储电容,所述下电极片以及所述第二导电区形成一第二存储电容。
根据本发明的实施例,所述第一存储电容和所述第二存储电容投射于所述玻璃基板的位置,是位于所述扫描线和所述控制电压线投射于所述玻璃基板的位置之间。
根据本发明的实施例,所述透明导电层的材料是氧化铟锡。
根据本发明的实施例,所述第一晶体管、所述第二晶体管、所述扫描线和所述控制电压线位于所述第一子像素电极以及所述第二子像素电极之间。
相较于现有技术,本发明的液晶显示面板以及其制造方法将作为存储电容的电极的下电极片设置到扫描线和控制电压线之间,而作为作为存储电容的另一电极的第一导电区以及第二导电区则采用透明导电层。因此形成存储电容的位置是位于扫描线和控制信号线之间,使得第二子像素电极有更大的布局空间,因此可以增加第二子像素电极的开口率。
为让本发明的上述内容能更明显易懂,下文特举优选实施例,并配合所附图式,作详细说明如下:
附图说明
图1是一种可以降低色偏的像素的设计图。。
图2是本发明液晶显示面板的简易示意图。
图3是图2的局部放大图。
图4至图7为形成本发明平面显示面板的方法示意图。
具体实施方式
以下各实施例的说明是参考附加的图式,用以例示本发明可用以实施之特定实施例。本发明所提到的方向用语,例如“上”、“下”、“前”、“后”、“左”、“右”、“顶”、“底”、“水平”、“垂直”等,仅是参考附加图式的方向。因此,使用的方向用语是用以说明及理解本发明,而非用以限制本发明。
请参阅图2和图3,图2是本发明液晶显示面板300的简易示意图,图3是图2区域B的局部放大图。液晶显示面板300包含数条数据线、数条扫描线、数条控制电压线、数个晶体管和数个像素单元。每一像素单元包含晶体管303、323、第一子像素电极331以及第二子像素电极332。为简化图式,在以下实施例中,仅绘示一数据线302、一扫描线301、一共通电压线305及一控制电压线307。第一晶体管303的栅极耦接到扫描线301,第一晶体管303的源极则耦接至数据线302。第二晶体管323的栅极耦接到控制电压线307,第二晶体管323的源极则耦接至第一晶体管303的漏极,第二晶体管323的漏极耦接到下电极板308。此外,第一晶体管303的漏极耦接至第一子像素电极331以及第二子像素电极332。控制电压线307用来提供一控制信号。
液晶显示面板300的驱动方式如下所述:栅极驱动器(图未示)输出的扫描信号通过扫描线301输入,使得连接扫描线301的第一晶体管303依序开启,同时源极驱动器(未图示)则输出对应的数据信号,通过数据线302输入至第一晶体管303,而第一晶体管303则将数据信号传递至第一子像素电极331以及第二子像素电极332,使其充电到所需的电压。而第一子像素电极331以及第二子像素电极332上方的液晶就是依据该数据信号和共通电压线305的共通电压的电压差扭转(twist),进而显示出不同的灰阶。栅极驱动器会通过数条扫描线一行接一行地输出扫描信号以将每一行的第一晶体管303打开,再由源极驱动器对每一行的第一子像素电极331以及第二子像素电极332进行充放电。如此依序下去,便可完成液晶显示面板300的完整显示。
在以下的揭露之中,将解说本发明平面显示面板300的制程方式。在此请参阅图4至图7,图4至图7为形成本发明平面显示面板300的方法示意图。图4至图7也是图3所示的平面显示面板300沿线段A-A’和线段C-C’的剖面图。
在此请先参阅图4,首先提供一个玻璃基板350当作下基板,接着进行一金属薄膜沉积制程,以于玻璃基板350表面形成一第一金属层(未显示),并利用一第一掩膜来进行第一微影蚀刻,以蚀刻得到第一晶体管303的栅极371、共通电压线305、控制电压线307以及扫描线301。虽然图4并未标示出扫描线301,但本领域的技术人员可以了解栅极371实质上是扫描线301的一部分。
接着请参阅图3和图5,接着沉积以氮化硅(SiNx)为材质的绝缘层351而覆盖栅极371、共通电压线305、控制电压线307以及扫描线301。于绝缘层351上连续沉积非晶硅(a-Si,Amorphous Si)层以及一高电子掺杂浓度的N+非晶硅层。再于非晶硅层以及一高电子掺杂浓度的N+非晶硅层上覆盖第二金属层(未绘示于图中)。接着利用第二掩膜以蚀刻非晶硅层以及N+非晶硅层以构成半导体层372,同时蚀刻该第二金属层以形成薄膜晶体管303的源极373、漏极374、下电极板308以及数据线302。半导体层372包含作为晶体管303通道的非晶硅层372a以及用来降低阻抗的欧姆接触层(Ohmic contactlayer)372b。虽然图5并未标示出数据线302,但本领域的技术人员可以了解源极373实质上是数据线302的一部分。
除此之外,在本实施例中,图5的结构是用第二掩膜同时蚀刻非晶硅层、N+非晶硅层和第二金属层。另一实施例中,可以先形成非晶硅层、N+非晶硅层于绝缘层351之上,先以第二掩膜蚀刻非晶硅层、N+非晶硅层以形成半导体层372;之后,形成第二金属层于半导体层372和绝缘层351之上,以另一掩膜蚀刻该第二金属层以形成薄膜晶体管303的源极373、漏极374以及数据线302。
请参阅图3和图6,接着沉积以氮化硅为材质的保护层(passivationlayer)375,再利用第三掩膜来进行第三微影蚀刻用以去除漏极374上方的部份保护层375,直至漏极374表面,以形成第一开孔(Via)531、第二开孔532和第三开孔533。第一开孔531投射于玻璃基板350上的位置,是位于扫描线301/控制电压线307投射于玻璃基板350的位置之间。第二开孔532贯穿保护层375和绝缘层351,且位在控制电压线307和第二子像素电极332之间,
另外,图4至图6虽然并未所绘示晶体管323,但是本领域的技术人员可以了解晶体管303和晶体管323的形成次序是相同的,在此不另赘述。
请参阅图3和图7,图7也是图3所示的平面显示面板300沿线段A-A’和线段C-C’的剖面图。在保护层375上形成以氧化铟锡物(Indium tin oxide,ITO)为材质的透明导电层,接着利用第四掩膜蚀刻该透明导电层以形成第一子像素电极331、第二子像素电极332和第二导电区334。第一子像素电极331通过第一开孔531与晶体管303的漏极374电性连接。第二子像素电极332通过第三开孔533与晶体管303的漏极374电性连接。共通电极305通过第二开孔532与第二导电区334电性连接。第二子像素电极332包含一第一导电区332a,第一导电区332a跨过控制信号线306。第一导电区332a与第二导电区334皆位于下电极片308的上方,而形成第一存储电容Cs1和第二存储电容Cs2。
如图2所示,由下电极片308和第二子像素电极332的第一导电区332a以及第二导电区334形成的第一存储电容Cs1和第二存储电容Cs2是位在扫描线301和控制电压线306之间,所以第二子像素电极332的布局区域可以增大。相较于图1,本发明的第二子像素电极332的开口率可以由67.17%增加到69.9%。
综上所述,虽然本发明已以优选实施例揭露如上,但上述优选实施例并非用以限制本发明,本领域的普通技术人员,在不脱离本发明的精神和范围内,均可作各种更动与润饰,因此本发明的保护范围以权利要求界定的范围为准。
Claims (9)
1.一种液晶显示面板,所述液晶显示面板包括一玻璃基板,其特征在于,所述液晶显示面板另包含:
一扫描线,由一第一金属层构成且位于所述玻璃基板上,用于传输一扫描信号;
一控制电压线,由所述第一金属层构成且位于所述玻璃基板上,用来传输一控制信号;
一绝缘层,位于所述扫描线和所述控制电压线之上;
一数据线,由一第二金属层构成且位于所述绝缘层之上,用于传输一数据信号;
一第一晶体管,电性连接于所述第一子像素电极;
一第二晶体管,电性连接于所述控制电压线和所述第一晶体管;
一第一子像素电极以及一第二子像素电极,皆由一透明导电层形成,所述第二子像素电极包含一第一导电区;
一共通电极,由所述第一金属层构成且位于所述玻璃基板上,用来传输一共通信号;
一第二导电区,由所述透明导电层形成,电性连接所述共通电极;
一下电极片,由所述第二金属层构成且位于所述绝缘层之上且位于所述扫描线以及所述控制电压线之间,所述下电极片电性连接第二晶体管;及
一第一存储电容以及一第二存储电容,所述第一存储电容是由所述下电极片以及所述第二子像素电极的所述第一导电区组成,所述第二存储电容是由所述下电极片以及所述第二导电区组成。
2.根据权利要求1所述的液晶显示面板,其特征在于,所述液晶显示面板另包含:
一保护层,位于所述第二金属层之上;
一第一开孔,开设于所述保护层中且位在所述扫描线和所述控制电压线之间,使得所述第一子像素电极通过所述第一开孔与所述第一晶体管电性连接;以及
一第二开孔,贯穿所述保护层和所述绝缘层,且位在所述控制电压线和所述第二子像素电极之间,使得所述共通电极通过所述第二开孔与所述第二导电区电性连接。
3.根据权利要求2所述的液晶显示面板,其特征在于:所述第一存储电容和所述第二存储电容投射于所述玻璃基板的位置,是位于所述扫描线和所述控制电压线投射于所述玻璃基板的位置之间。
4.根据权利要求1所述的液晶显示面板,其特征在于:所述透明导电层的材料是氧化铟锡。
5.根据权利要求1所述的液晶显示面板,其特征在于:所述第一晶体管、所述第二晶体管、所述扫描线和所述控制电压线位于所述第一子像素电极以及所述第二子像素电极之间。
6.一种液晶显示面板的制造方法,其特征在于,所述制造方法包含:
提供一玻璃基板;
形成一第一金属层于所述玻璃基板上;
蚀刻所述第一金属层,以形成一晶体管的栅极、一控制电压线、一共通电压线以及一扫描线;
在所述晶体管的栅极、所述控制电压线、所述共通电压线以及所述扫描线上形成一绝缘层;
形成一第二金属层,并蚀刻所述第二金属层,以形成所述晶体管的源极和漏极、一下电极片以及一数据线,所述下电极片位于所述控制电压线和所述扫描线之间;
形成一保护层于所述第二金属层之上;
蚀刻所述保护层以形成一第一开孔和一第二开孔;
形成一透明导电层,并蚀刻所述透明导电层以形成一第一子像素电极、一第二子像素电极以及一第二导电区,所述第二子像素电极包含一第一导电区,其中所述第一子像素电极通过所述第一开孔与所述晶体管电性连接,所述共通电极通过所述第二开孔与所述第二导电区电性连接,所述下电极片以及所述第二子像素电极的所述第一导电区形成一第一存储电容,所述下电极片以及所述第二导电区形成一第二存储电容。
7.根据权利要求6所述的制造方法,其特征在于:所述第一存储电容和所述第二存储电容投射于所述玻璃基板的位置,是位于所述扫描线和所述控制电压线投射于所述玻璃基板的位置之间。
8.根据权利要求6所述的制造方法,其特征在于:所述透明导电层的材料是氧化铟锡。
9.根据权利要求6所述的制造方法,其特征在于:所述晶体管、所述扫描线和所述控制电压线位于所述第一子像素电极以及所述第二子像素电极之间。
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DE112012006096.2T DE112012006096B4 (de) | 2012-03-26 | 2012-03-27 | LCD-Panel und Verfahren zur Herstellung desselben |
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CN104181739A (zh) * | 2013-05-24 | 2014-12-03 | 乐金显示有限公司 | 液晶显示装置及其制造方法 |
CN104181739B (zh) * | 2013-05-24 | 2017-06-23 | 乐金显示有限公司 | 液晶显示装置及其制造方法 |
CN105159002A (zh) * | 2015-09-18 | 2015-12-16 | 友达光电股份有限公司 | 像素结构 |
CN105159002B (zh) * | 2015-09-18 | 2019-03-08 | 友达光电股份有限公司 | 像素结构 |
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US20150009446A1 (en) | 2015-01-08 |
WO2013143064A1 (zh) | 2013-10-03 |
DE112012006096T5 (de) | 2015-01-22 |
DE112012006096B4 (de) | 2020-08-13 |
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