WO2017185428A1 - 阵列基板及液晶显示装置 - Google Patents

阵列基板及液晶显示装置 Download PDF

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Publication number
WO2017185428A1
WO2017185428A1 PCT/CN2016/082284 CN2016082284W WO2017185428A1 WO 2017185428 A1 WO2017185428 A1 WO 2017185428A1 CN 2016082284 W CN2016082284 W CN 2016082284W WO 2017185428 A1 WO2017185428 A1 WO 2017185428A1
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Prior art keywords
layer
disposed
insulating layer
metal layer
drain
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PCT/CN2016/082284
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English (en)
French (fr)
Inventor
王聪
Original Assignee
武汉华星光电技术有限公司
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Application filed by 武汉华星光电技术有限公司 filed Critical 武汉华星光电技术有限公司
Priority to US15/122,933 priority Critical patent/US10180608B2/en
Publication of WO2017185428A1 publication Critical patent/WO2017185428A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G02F1/13685—Top gates

Definitions

  • the present invention relates to the field of liquid crystal display, and in particular to an array substrate and a liquid crystal display device.
  • the storage capacitor Cst is often formed by the upper and lower layers of ITO to improve the stability of the panel.
  • the Cst of the general panel is relatively small, especially when the aperture ratio PPI (Pixel per The higher the Inch), the smaller the storage capacitor formed by the panel, which affects the stability of the panel.
  • PPI Pixel per The higher the Inch
  • the panel 1 is prone to crosstalk and sway, which reduces the display performance of the panel.
  • An embodiment of the present invention provides an array substrate, including:
  • the light shielding metal layer disposed on the glass substrate, the light shielding metal layer having a first region and a second region;
  • a first insulating layer disposed on the glass substrate and the light shielding metal layer
  • the thin film transistor disposed on the first insulating layer, the thin film transistor having a source, a drain, a gate, and a semiconductor layer;
  • a pixel electrode layer electrically connected to the drain
  • a common electrode layer electrically connected to the light shielding metal layer, and a first storage capacitor is formed between the pixel electrode layer and the common electrode layer;
  • a first region of the light-shielding metal layer is used for light shielding, and a second region of the light-shielding metal layer is opposite to the drain to form a second storage between the second region of the light-shielding metal layer and the drain capacitance.
  • the thin film transistor is provided with a flat layer, the common electrode layer is disposed on the flat layer, and the common electrode layer is provided with a third insulating layer, the pixel electrode A layer is disposed on the third insulating layer.
  • the thin film transistor further includes a second insulating layer and an interlayer dielectric layer, the semiconductor layer is disposed on the first insulating layer, and the second insulating layer is disposed on the On the semiconductor layer, the gate is disposed on the second insulating layer, the interlayer dielectric layer is disposed on the second insulating layer and the gate, and the source and the drain are disposed on On the interlayer dielectric layer, the planarization layer is on the source, the drain, and the interlayer dielectric layer.
  • the source is in contact with the semiconductor layer by sequentially penetrating through the interlayer dielectric layer and the first via hole of the second insulating layer, and the drain passes through the The interlayer dielectric layer and the second via of the second insulating layer are in contact with the semiconductor layer.
  • the second insulating layer is provided with a second metal layer, the second metal layer having a source region, a drain region and a connection region which are insulated from each other;
  • the source is disposed in a source region of the second metal layer
  • the drain is disposed in a drain region of the second metal layer
  • the planar layer is provided with a fourth through hole
  • the common electrode passes
  • the fourth via hole is in contact with and electrically connected to the connection region of the second metal layer, and the connection region of the second metal layer is electrically connected to the light shielding metal layer.
  • the second insulating layer and the first insulating layer are sequentially penetrated to form a third via hole, and the connection region of the second metal layer passes through the third via hole and the light shielding layer
  • the metal layers are in contact and electrically connected.
  • the thin film transistor further includes a second insulating layer and an interlayer dielectric layer
  • the semiconductor layer is disposed on the first insulating layer
  • the source is disposed on the first On the insulating layer and the semiconductor layer
  • the drain is disposed on the first insulating layer and the semiconductor layer
  • the second insulating layer is disposed on the source, the drain, the semiconductor layer, and the On an insulating layer
  • the gate is disposed on the second insulating layer
  • the interlayer dielectric layer is disposed on the gate and the second insulating layer
  • the planar layer is disposed between the layers On the dielectric layer.
  • a second metal layer is disposed on the first insulating layer and the semiconductor layer, and the second metal layer has a source region, a drain region, and a connection region that are insulated from each other.
  • the source is disposed in a source region of the second metal layer, and the drain is disposed in a drain region of the second metal layer; the planar layer, the interlayer dielectric layer, and the second
  • the insulating layer is sequentially formed to form a fifth via hole, and the common electrode layer is in contact with and electrically connected to the connection region of the second metal layer through the fifth via hole, and the connection region of the second metal layer and the light shielding layer
  • the metal layer is electrically connected.
  • a third via hole is formed in the first insulating layer, and a connection region of the second metal layer is in contact with and electrically connected to the light shielding metal layer through the third via hole.
  • the present invention also provides a liquid crystal display device comprising the array substrate according to any of the above.
  • the common electrode layer is electrically connected to the light shielding metal layer
  • the light shielding metal layer has the same potential as the common electrode layer
  • the pixel electrode layer is electrically connected to the drain, so that The pixel electrode layer and the drain have the same potential
  • the second region of the light-shielding metal layer is opposite to the drain to form a second storage capacitor
  • the second storage capacitor is used to increase the storage capacitance of the array substrate, thereby improving Display performance without affecting aperture ratio.
  • FIG. 1 is a schematic structural view of an array substrate in a first preferred embodiment of the present invention
  • FIG. 2 is a partial structural schematic view showing another angle of the array substrate in the embodiment shown in FIG. 1;
  • FIG. 3 is a schematic structural view of an array substrate in a second preferred embodiment of the present invention.
  • FIG. 4 is a partial structural schematic view showing another angle of the array substrate in the embodiment shown in FIG.
  • FIG. 1 is a schematic structural view of a first preferred embodiment of an array substrate according to the present invention.
  • An array substrate of the preferred embodiment includes: a glass substrate 10, a light shielding metal layer 20, a first insulating layer 30, a thin film transistor 40, a flat layer 50, a common electrode layer 60, a third insulating layer 70, and a pixel electrode layer 80.
  • the thin film transistor 40 includes a semiconductor layer 41, a second insulating layer 42, a gate electrode 43, an interlayer dielectric layer 44, a source electrode 45, and a drain electrode 46.
  • the light shielding metal layer 20 is disposed on the glass substrate 10, and the light shielding metal layer 20 has a first region (not labeled) and a second region (not labeled); wherein the first region corresponds to the semiconductor layer 41, and is mainly used for Shading.
  • the second region is corresponding to and facing the drain 43 and is mainly used to form a second storage capacitor with the drain 43.
  • the first insulating layer 30 is disposed on the glass substrate 10 and the light-shielding metal layer 20, which is formed by chemical vapor deposition using silicon nitride/and or silicon dioxide.
  • the thin film transistor 40 is disposed on the first insulating layer 30.
  • the semiconductor layer 41 is disposed on the first insulating layer 30, the second insulating layer 42 is disposed on the semiconductor layer 41, and the gate 43 is disposed on the second insulating layer 42, the interlayer dielectric layer 44.
  • the source 45 and the drain 46 are disposed on the interlayer dielectric layer 44.
  • the source electrode 45 is in contact with the semiconductor layer 41 by sequentially penetrating through the interlayer dielectric layer 44 and the first via hole of the second insulating layer 42.
  • the drain electrode 46 passes through the interlayer dielectric layer 44 in sequence.
  • the second via hole of the second insulating layer 42 is in contact with the semiconductor 41 layer.
  • the planarization layer 50 is disposed on the source 45, the drain 46, and the interlayer dielectric layer 44.
  • the common electrode layer 60 is disposed on the flat layer 50.
  • the third insulating layer 70 is disposed on the common electrode layer 60.
  • the pixel electrode layer 80 is disposed on the third insulating layer 70.
  • the flat layer 50 and the third insulating layer 70 extend through the flat via 50 and the drain via 51 of the third insulating layer 70.
  • the pixel electrode layer 80 is in contact with the drain 46 through the drain via 51. And electrically connected.
  • the array substrate further includes a second metal layer (not labeled) disposed on the second insulating layer 2, the second metal layer having a source region and a drain region insulated from each other. And a connection region 456; a source 45 is disposed in the source region of the second metal layer, the drain 46 is disposed in a drain region of the second metal layer, and the planar layer 50 is provided with a fourth via 61.
  • the common electrode layer 60 is in contact with and electrically connected to the connection region 456 of the second metal layer through the fourth via hole 61, and the connection region 456 of the second metal layer and the light shielding metal layer 20 are electrically connected. connection.
  • the second insulating layer 42 and the first insulating layer 30 are provided with a third through hole 200 extending through the second insulating layer 42 and the first insulating layer 30, and the connection region 456 of the second metal layer passes through the first
  • the three-via hole 200 is in contact with and electrically connected to the light-shielding metal layer 20.
  • a first storage capacitor is formed between the common electrode layer 60 and the pixel electrode layer 80, and since the common electrode layer 60 is electrically connected to the light shielding metal layer 20, the light shielding metal layer 20 has the same potential as the common electrode layer 60.
  • the pixel electrode layer 80 is electrically connected to the drain electrode 46 such that the pixel electrode layer 80 has the same potential as the drain electrode 46.
  • the second region of the light shielding metal layer 20 is opposite to the drain electrode 46 to form a second surface.
  • the storage capacitor increases the storage capacitance of the array substrate through the second storage capacitor, thereby improving display performance without affecting the aperture ratio.
  • FIG. 3 is a schematic structural view of a second preferred embodiment of the array substrate of the present invention.
  • An array substrate of the preferred embodiment includes: a glass substrate 10, a light shielding metal layer 20, a first insulating layer 30, a thin film transistor 40, a flat layer 50, a common electrode layer 60, a third insulating layer 70, and a pixel electrode layer 80.
  • the thin film transistor 40 includes a semiconductor layer 41, a second insulating layer 42, a gate electrode 43, an interlayer dielectric layer 44, a source electrode 45, and a drain electrode 46.
  • the light shielding metal layer 20 is disposed on the glass substrate 10, and the light shielding metal layer 20 has a first region (not labeled) and a second region (not labeled); wherein the first region corresponds to the semiconductor layer 41, and is mainly used for Shading.
  • the second region is corresponding to and facing the drain 43 and is mainly used to form a second storage capacitor with the drain 43.
  • the first insulating layer 30 is disposed on the glass substrate 10 and the light-shielding metal layer 20, which is formed by chemical vapor deposition using silicon nitride/and or silicon dioxide.
  • the thin film transistor 40 is disposed on the first insulating layer 30.
  • the semiconductor layer 41 is disposed on the first insulating layer 30, the source 45 is disposed on the first insulating layer 30 and the semiconductor layer 41, and the drain 46 is disposed on the first insulating layer. 30 and on the semiconductor layer 41.
  • the second insulating layer 42 is disposed on the source 45, the drain 46, the semiconductor layer 41, and the first insulating layer 30.
  • the gate electrode 43 is disposed on the second insulating layer 42
  • the interlayer dielectric layer 44 is disposed on the gate electrode 43 and the second insulating layer 42 .
  • the flat layer 50 is disposed on the interlayer dielectric layer 44.
  • the common electrode layer 60 is disposed on the flat layer 50.
  • the third insulating layer 70 is disposed on the common electrode layer 60.
  • the pixel electrode layer 80 is disposed on the third insulating layer 70.
  • the third insulating layer 70 and the flat layer 50 are sequentially penetrated to form a drain via 51.
  • the pixel electrode layer 80 is in contact with and electrically connected to the drain through the drain via 51.
  • the array substrate further includes a second metal layer (not labeled) disposed on the first insulating layer 30 and the semiconductor layer 41, and the second metal layer has mutual An insulated source region, a drain region, and a connection region 456, the source 45 is disposed in a source region of the second metal layer, and the drain 46 is disposed in a drain region of the second metal layer;
  • the layer 50, the interlayer dielectric layer 44, and the second insulating layer 42 are sequentially penetrated to form a fifth via hole 61 through which the common electrode layer 60 and the second metal layer
  • the connection region 456 is in contact with and electrically connected, and the connection region 456 of the second metal layer is electrically connected to the light shielding metal layer 20.
  • a sixth through hole 200 is defined in the first insulating layer 30, and the connection region 456 of the second metal layer is in contact with and electrically connected to the light shielding metal layer 20 through the third through hole 200.
  • the insulating layer between the drain 46 and the second region of the light shielding metal layer 20 has only the first insulating layer 30, Therefore, the second storage capacitor formed between the light shielding metal layer 20 and the drain 46 is further improved relative to the embodiment, so that the storage capacitance of the array substrate can be further improved, which is advantageous for further improving display characteristics. .
  • the present invention also provides a liquid crystal display device comprising the array substrate, the liquid crystal layer and the color filter substrate in any of the above embodiments, the liquid crystal layer being located between the color filter substrate and the array substrate.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Nonlinear Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Liquid Crystal (AREA)
  • Geometry (AREA)
  • Thin Film Transistor (AREA)

Abstract

一种阵列基板及液晶显示装置，该阵列基板包括：一玻璃基板（10）；遮光金属层（20），该遮光金属层（20）具有第一区域以及第二区域；第一绝缘层（30）；薄膜晶体管（40）；像素电极层（80）；公共电极层（60），其与所述遮光金属层（20）电连接；第二区域与所述漏极（46）之间形成第二存储电容。具有提高液晶显示装置的存储电容，进而提高显示性能的有益效果。

Description

阵列基板及液晶显示装置 技术领域
本发明涉及液晶显示领域，特别是涉及一种阵列基板及液晶显示装置。
 背景技术
传统的LTPS面板画素结构设计中，往往是通过上下两层ITO之间来形成存储电容Cst，用来提升面板的稳定性。
在实际面板设计中，由于画素的尺寸较小，一般面板的Cst都比较小，尤其当开口率PPI（Pixel per Inch）越高时，面板形成的存储电容会更小，影响到面板的稳定性，面板l很容易出现串扰、晃动等现象，降低了面板的显示性能。
现有技术存在缺陷，急需改进。
 技术问题
本发明的目的在于提供一种阵列基板及液晶显示装置；以解决现有技术中阵列基板的存储电容较小从而影响显示性能的技术问题。
 技术解决方案
为解决上述问题，本发明提供的技术方案如下：
本发明实施例提供一种阵列基板，包括：
一玻璃基板；
遮光金属层，其设置于所述玻璃基板上，该遮光金属层具有第一区域以及第二区域；
第一绝缘层，其设置于所述玻璃基板以及所述遮光金属层上；
薄膜晶体管，其设置于所述第一绝缘层上，该薄膜晶体管具有源极、漏极、栅极以及半导体层；
像素电极层，其与所述漏极电连接；
公共电极层，其与所述遮光金属层电连接，所述像素电极层与所述公共电极层之间形成第一存储电容；
所述遮光金属层的第一区域用于遮光，所述遮光金属层的第二区域与所述漏极正对以在该遮光金属层的第二区域与所述漏极之间形成第二存储电容。
在本发明所述的阵列基板中，所述薄膜晶体管上设置有平坦层，所述公共电极层设置于所述平坦层上，所述公共电极层上设置有第三绝缘层，所述像素电极层设置于所述第三绝缘层上。
在本发明所述的阵列基板中，所述薄膜晶体管还包括第二绝缘层以及层间介质层，所述半导体层设置于所述第一绝缘层上，所述第二绝缘层设置于所述半导体层上，所述栅极设置于所述第二绝缘层上，所述层间介质层设置于所述第二绝缘层以及所述栅极上，所述源极以及所述漏极设置于所述层间介质层上，所述平坦层位于所述源极、所述漏极以及所述层间介质层上。
在本发明所述的阵列基板中，所述源极通过依次贯穿所述层间介质层以及所述第二绝缘层第一通孔与所述半导体层接触，所述漏极通过依次贯穿所述层间介质层以及所述第二绝缘层的第二通孔与所述半导体层接触。
在本发明所述的阵列基板中，所述第二绝缘层上设置有第二金属层，所述第二金属层具有相互绝缘开的源极区域、漏极区域以及连接区域；
所述源极设置于所述第二金属层的源极区域，所述漏极设置于所述第二金属层的漏极区域，所述平坦层开设有第四通孔，所述公共电极通过所述第四通孔与所述第二金属层的连接区域接触并电连接，所述第二金属层的连接区域与所述遮光金属层电连接。
在本发明所述的阵列基板中，该第二绝缘层以及该第一绝缘层依次被贯穿从而形成第三通孔，所述第二金属层的连接区域通过该第三通孔与所述遮光金属层接触并电连接。
在本发明所述的阵列基板中，所述薄膜晶体管还包括第二绝缘层以及层间介质层，所述半导体层设置于所述第一绝缘层上，所述源极设置于所述第一绝缘层以及所述半导体层上，所述漏极设置于所述第一绝缘层以及所述半导体层上，第二绝缘层设置于所述源极、漏极、所述半导体层以及所述第一绝缘层上，所述栅极设置于所述第二绝缘层上，所述层间介质层设置于所述栅极以及所述第二绝缘层上，所述平坦层设置于所述层间介质层上。
在本发明所述的阵列基板中，所述第一绝缘层以及所述半导体层上设置有第二金属层，所述第二金属层具有相互绝缘的源极区域、漏极区域以及连接区域，所述源极设置于所述第二金属层的源极区域，所示漏极设置于所述第二金属层的漏极区域；所述平坦层、所述层间介质层以及所述第二绝缘层依次被贯穿而形成一第五通孔，所述公共电极层通过该第五通孔与该第二金属层的连接区域接触并电连接，该第二金属层的连接区域与所述遮光金属层电连接。
在本发明所述的阵列基板中，所述第一绝缘层上开设有第三通孔，所述第二金属层的连接区域通过所述第三通孔与所述遮光金属层接触并电连接。
本发明还提供了一种液晶显示装置，包括上述任一项所述的阵列基板。
 有益效果
相对于现有技术，在本发明中，由于该公共电极层与该遮光金属层电连接，因此该遮光金属层具有与公共电极层相同的电位，该像素电极层与漏极电连接，从而该像素电极层与该漏极具有相同的电位，该遮光金属层的第二区域与该漏极正对的从而形成第二存储电容，通过该第二存储电容来提高阵列基板的存储电容，从而提高显示性能，并且不会影响开口率。
 附图说明
图1为本发明第一优选实施例中的阵列基板的结构示意图；
图2为图1所示实施例中的阵列基板的另一角度的局部结构示意图；
图3为本发明第二优选实施例中的阵列基板的结构示意图；
图4为图3所示实施例中的阵列基板的另一角度的局部结构示意图。
 本发明的最佳实施方式
以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。
在图中，结构相似的单元是以相同标号表示。
请参照图1，图1为本发明的阵列基板的第一优选实施例的结构示意图。本优选实施例的一种阵列基板，包括：玻璃基板10、遮光金属层20、第一绝缘层30、薄膜晶体管40、平坦层50、公共电极层60、第三绝缘层70以及像素电极层80。其中，该薄膜晶体管40包括半导体层41、第二绝缘层42、栅极43、层间介质层44、源极45以及漏极46。
其中，遮光金属层20设置于玻璃基板10上，该遮光金属层20具有第一区域(未标号)以及第二区域（未标号）；其中，该第一区域与半导体层41对应，主要用于遮光。该第二区域与漏极43对应并正对，主要用于与该漏极43形成第二存储电容。
第一绝缘层30设置于玻璃基板10以及遮光金属层20上，其采用氮化硅/和或二氧化硅采用化学气相沉淀制成。
薄膜晶体管40设置于第一绝缘层30上。具体地，该半导体层41设置于第一绝缘层30上，第二绝缘层42设置于半导体层41上，该栅极43设置于所述第二绝缘层42上，所述层间介质层44设置于所述第二绝缘层42以及所述栅极43上，所述源极45以及所述漏极46设置于所述层间介质层44上。所述源极45通过依次贯穿所述层间介质层44以及所述第二绝缘层42第一通孔与所述半导体层41接触，所述漏极46通过依次贯穿所述层间介质层44以及所述第二绝缘层42的第二通孔与所述半导体41层接触。
该平坦层50设置于该源极45、漏极46以及层间介质层44上。该公共电极层60设置于该平坦层50上，该第三绝缘层70设置于该公共电极层60上，该像素电极层80设置于该第三绝缘层70上。该平坦层50以及该第三绝缘层70开设依次贯穿该平坦层50以及该第三绝缘层70的漏极通孔51，该像素电极层80通过该漏极通孔51与该漏极46接触并电连接。
具体地，同时参照图2所示，该阵列基板还包括设置于该第二绝缘层2上的第二金属层（未标号），第二金属层具有相互绝缘开的源极区域、漏极区域以及连接区域456；源极45设置于所述第二金属层的源极区域，所述漏极46设置于所述第二金属层的漏极区域，所述平坦层50开设有第四通孔61，所述公共电极层60通过所述第四通孔61与所述第二金属层的连接区域456接触并电连接，所述第二金属层的连接区域456与所述遮光金属层20电连接。该第二绝缘层42以及该第一绝缘层30开设有依次贯穿该第二绝缘层42以及该第一绝缘层30的第三通孔200，所述第二金属层的连接区域456通过该第三通孔200与所述遮光金属层20接触并电连接。
该公共电极层60与该像素电极层80之间形成第一存储电容，并且由于该公共电极层60与该遮光金属层20电连接，因此该遮光金属层20具有与公共电极层60相同的电位，该像素电极层80与漏极46电连接，从而该像素电极层80与该漏极46具有相同的电位，该遮光金属层20的第二区域与该漏极46正对的从而形成第二存储电容，通过该第二存储电容来提高阵列基板的存储电容，从而提高显示性能，并且不会影响开口率。
请参照图3，图3为本发明的阵列基板的第二优选实施例的结构示意图。本优选实施例的一种阵列基板包括包括：玻璃基板10、遮光金属层20、第一绝缘层30、薄膜晶体管40、平坦层50、公共电极层60、第三绝缘层70以及像素电极层80。其中，该薄膜晶体管40包括半导体层41、第二绝缘层42、栅极43、层间介质层44、源极45以及漏极46。
其中，遮光金属层20设置于玻璃基板10上，该遮光金属层20具有第一区域(未标号)以及第二区域（未标号）；其中，该第一区域与半导体层41对应，主要用于遮光。该第二区域与漏极43对应并正对，主要用于与该漏极43形成第二存储电容。
第一绝缘层30设置于玻璃基板10以及遮光金属层20上，其采用氮化硅/和或二氧化硅采用化学气相沉淀制成。
薄膜晶体管40设置于第一绝缘层30上。具体地，该半导体层41设置于第一绝缘层30上，该源极45设置于所述第一绝缘层30以及所述半导体层41上，所述漏极46设置于所述第一绝缘层30以及所述半导体层上41上。第二绝缘层42设置于源极45、漏极46、半导体层41以及第一绝缘层30上。栅极43设置于第二绝缘层42上，层间介质层44设置于栅极43以及第二绝缘层42上。
该平坦层50设置于层间介质层44上。该公共电极层60设置于平坦层50上，该第三绝缘层70设置于该公共电极层60上，该像素电极层80设置于该第三绝缘层70上。该第三绝缘层70、该平坦层50依次被贯穿，从而形成一漏极通孔51，该像素电极层80通过该漏极通孔51与该漏极接触并电连接。
同时参照图4，具体地，在本实施例中，该阵列基板还包括设置于第一绝缘30以及所述半导体层41上的第二金属层（未标号），所述第二金属层具有相互绝缘的源极区域、漏极区域以及连接区域456，所述源极45设置于所述第二金属层的源极区域，漏极46设置于该第二金属层的漏极区域；所述平坦层50、所述层间介质层44以及所述第二绝缘层42依次被贯穿而形成一第五通孔61，所述公共电极层60通过该第五通孔61与该第二金属层的连接区域456接触并电连接，该第二金属层的连接区域456与所述遮光金属层20电连接。所述第一绝缘层30上开设有第六通孔200，所述第二金属层的连接区域456通过所述第三通孔200与所述遮光金属层20接触并电连接。
在本实施例中，由于该漏极46以及源极45直接形成于该半导体层41上，该该漏极46与遮光金属层20的第二区域之间的绝缘层只有第一绝缘层30，因此，相对于实施例中来说，该遮光金属层20与漏极46之间形成的第二存储电容进一步被提高了，因此，可以进一步提高该阵列基板的存储电容，有利于进一步提高显示特性。
本发明还提供了一种液晶显示装置，其包括上述任一实施例中的阵列基板、液晶层以及彩膜基板，该液晶层位于彩膜基板以及阵列基板之间。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (11)

  1. 一种阵列基板，其包括：
    一玻璃基板；
    遮光金属层，其设置于所述玻璃基板上，该遮光金属层具有第一区域以及第二区域；
    第一绝缘层，其设置于所述玻璃基板以及所述遮光金属层上；
    薄膜晶体管，其设置于所述第一绝缘层上，该薄膜晶体管具有源极、漏极、栅极以及半导体层；
    像素电极层，其与所述漏极电连接；
    公共电极层，其与所述遮光金属层电连接，所述像素电极层与所述公共电极层之间形成第一存储电容；
    所述遮光金属层的第一区域用于遮光，所述遮光金属层的第二区域与所述漏极正对以在该遮光金属层的第二区域与所述漏极之间形成第二存储电容。
  2. 根据权利要求1所述的阵列基板，其中，所述薄膜晶体管上设置有平坦层，所述公共电极层设置于所述平坦层上，所述公共电极层上设置有第三绝缘层，所述像素电极层设置于所述第三绝缘层上。
  3. 根据权利要求2所述的阵列基板，其中，所述薄膜晶体管还包括第二绝缘层以及层间介质层，所述半导体层设置于所述第一绝缘层上，所述第二绝缘层设置于所述半导体层上，所述栅极设置于所述第二绝缘层上，所述层间介质层设置于所述第二绝缘层以及所述栅极上，所述源极以及所述漏极设置于所述层间介质层上，所述平坦层位于所述源极、所述漏极以及所述层间介质层上。
  4. 根据权利要求3所述的阵列基板，其中，所述源极通过依次贯穿所述层间介质层以及所述第二绝缘层第一通孔与所述半导体层接触，所述漏极通过依次贯穿所述层间介质层以及所述第二绝缘层的第二通孔与所述半导体层接触。
  5. 根据权利要求3所述的阵列基板，其中，所述第二绝缘层上设置有第二金属层，所述第二金属层具有相互绝缘开的源极区域、漏极区域以及连接区域；
    所述源极设置于所述第二金属层的源极区域，所述漏极设置于所述第二金属层的漏极区域，所述平坦层开设有第四通孔，所述公共电极通过所述第四通孔与所述第二金属层的连接区域接触并电连接，所述第二金属层的连接区域与所述遮光金属层电连接。
  6. 根据权利要求5所述的阵列基板，其中，该第二绝缘层以及该第一绝缘层依次被贯穿从而形成第三通孔，所述第二金属层的连接区域通过该第三通孔与所述遮光金属层接触并电连接。
  7. 根据权利要求2所述的阵列基板，其中，所述薄膜晶体管还包括第二绝缘层以及层间介质层，所述半导体层设置于所述第一绝缘层上，所述源极设置于所述第一绝缘层以及所述半导体层上，所述漏极设置于所述第一绝缘层以及所述半导体层上，第二绝缘层设置于所述源极、漏极、所述半导体层以及所述第一绝缘层上，所述栅极设置于所述第二绝缘层上，所述层间介质层设置于所述栅极以及所述第二绝缘层上，所述平坦层设置于所述层间介质层上。
  8. 根据权利要求7所述的阵列基板，其中，所述第一绝缘层以及所述半导体层上设置有第二金属层，所述第二金属层具有相互绝缘的源极区域、漏极区域以及连接区域，所述源极设置于所述第二金属层的源极区域，所示漏极设置于所述第二金属层的漏极区域；所述平坦层、所述层间介质层以及所述第二绝缘层依次被贯穿而形成一第五通孔，所述公共电极层通过该第五通孔与该第二金属层的连接区域接触并电连接，该第二金属层的连接区域与所述遮光金属层电连接。
  9. 根据权利要求8所述的阵列基板，其中，所述第一绝缘层上开设有第三通孔，所述第二金属层的连接区域通过所述第三通孔与所述遮光金属层接触并电连接。
  10. 一种阵列基板，其包括一玻璃基板；
    遮光金属层，其设置于所述玻璃基板上，该遮光金属层具有第一区域以及第二区域；
    第一绝缘层，其设置于所述玻璃基板以及所述遮光金属层上；
    薄膜晶体管，其设置于所述第一绝缘层上，该薄膜晶体管具有源极、漏极、栅极以及半导体层；
    像素电极层，其与所述漏极电连接；
    公共电极层，其与所述遮光金属层电连接，所述像素电极层与所述公共电极层之间形成第一存储电容；
    所述遮光金属层的第一区域用于遮光，所述遮光金属层的第二区域与所述漏极正对以在该遮光金属层的第二区域与所述漏极之间形成第二存储电容；
    所述公共电极层设置于所述平坦层上，所述公共电极层上设置有第三绝缘层，所述像素电极层设置于所述第三绝缘层上；
    所述薄膜晶体管还包括第二绝缘层以及层间介质层，所述半导体层设置于所述第一绝缘层上，所述第二绝缘层设置于所述半导体层上，所述栅极设置于所述第二绝缘层上，所述层间介质层设置于所述第二绝缘层以及所述栅极上，所述源极以及所述漏极设置于所述层间介质层上，所述平坦层位于所述源极、所述漏极以及所述层间介质层上；
    所述源极通过依次贯穿所述层间介质层以及所述第二绝缘层第一通孔与所述半导体层接触，所述漏极通过依次贯穿所述层间介质层以及所述第二绝缘层的第二通孔与所述半导体层接触。
    所述第二绝缘层上设置有第二金属层，所述第二金属层具有相互绝缘开的源极区域、漏极区域以及连接区域；
    所述源极设置于所述第二金属层的源极区域，所述漏极设置于所述第二金属层的漏极区域，所述平坦层开设有第四通孔，所述公共电极通过所述第四通孔与所述第二金属层的连接区域接触并电连接，所述第二金属层的连接区域与所述遮光金属层电连接；
    该第二绝缘层以及该第一绝缘层依次被贯穿从而形成第三通孔，所述第二金属层的连接区域通过该第三通孔与所述遮光金属层接触并电连接。
  11. 一种液晶显示装置，其包括权利要求1所述的阵列基板。
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