CN105785676B - 阵列基板及液晶显示装置 - Google Patents

阵列基板及液晶显示装置 Download PDF

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CN105785676B
CN105785676B CN201610281287.9A CN201610281287A CN105785676B CN 105785676 B CN105785676 B CN 105785676B CN 201610281287 A CN201610281287 A CN 201610281287A CN 105785676 B CN105785676 B CN 105785676B
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insulating layer
metal layer
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CN105785676A (zh
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王聪
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Wuhan China Star Optoelectronics Technology Co Ltd
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Wuhan China Star Optoelectronics Technology Co Ltd
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Abstract

本发明提供一种阵列基板及液晶显示装置，该阵列基板包括：一玻璃基板；遮光金属层，其设置于所述玻璃基板上，该遮光金属层具有第一区域以及第二区域；第一绝缘层，其设置于所述玻璃基板以及所述遮光金属层上；薄膜晶体管，其设置于所述第一绝缘层上，该薄膜晶体管具有源极、漏极、栅极以及半导体层；像素电极层，其与所述漏极电连接；公共电极层，其与所述遮光金属层电连接，所述像素电极层与所述公共电极层之间形成第一存储电容；所述遮光金属层的第一区域用于遮光，所述遮光金属层的第二区域与所述漏极正对以在该遮光金属层的第二区域与所述漏极之间形成第二存储电容。本发明具有提高液晶显示装置的存储电容，进而提高显示性能的有益效果。

Description

阵列基板及液晶显示装置
技术领域
本发明涉及液晶显示领域，特别是涉及一种阵列基板及液晶显示装置。
背景技术
传统的LTPS面板画素结构设计中，往往是通过上下两层ITO之间来形成存储电容Cst，用来提升面板的稳定性。
在实际面板设计中，由于画素的尺寸较小，一般面板的Cst都比较小，尤其当开口率PPI(Pixel per Inch)越高时，面板形成的存储电容会更小，影响到面板的稳定性，面板l很容易出现串扰、晃动等现象，降低了面板的显示性能。
现有技术存在缺陷，急需改进。
发明内容
本发明的目的在于提供一种阵列基板及液晶显示装置；以解决现有技术中阵列基板的存储电容较小从而影响显示性能的技术问题。
为解决上述问题，本发明提供的技术方案如下：
本发明实施例提供一种阵列基板，包括：
一玻璃基板；
遮光金属层，其设置于所述玻璃基板上，该遮光金属层具有第一区域以及第二区域；
第一绝缘层，其设置于所述玻璃基板以及所述遮光金属层上；
薄膜晶体管，其设置于所述第一绝缘层上，该薄膜晶体管具有源极、漏极、栅极以及半导体层；
像素电极层，其与所述漏极电连接；
公共电极层，其与所述遮光金属层电连接，所述像素电极层与所述公共电极层之间形成第一存储电容；
所述遮光金属层的第一区域用于遮光，所述遮光金属层的第二区域与所述漏极正对以在该遮光金属层的第二区域与所述漏极之间形成第二存储电容。
在本发明所述的阵列基板中，所述薄膜晶体管上设置有平坦层，所述公共电极层设置于所述平坦层上，所述公共电极层上设置有第三绝缘层，所述像素电极层设置于所述第三绝缘层上。
在本发明所述的阵列基板中，所述薄膜晶体管还包括第二绝缘层以及层间介质层，所述半导体层设置于所述第一绝缘层上，所述第二绝缘层设置于所述半导体层上，所述栅极设置于所述第二绝缘层上，所述层间介质层设置于所述第二绝缘层以及所述栅极上，所述源极以及所述漏极设置于所述层间介质层上，所述平坦层位于所述源极、所述漏极以及所述层间介质层上。
在本发明所述的阵列基板中，所述源极通过依次贯穿所述层间介质层以及所述第二绝缘层第一通孔与所述半导体层接触，所述漏极通过依次贯穿所述层间介质层以及所述第二绝缘层的第二通孔与所述半导体层接触。
在本发明所述的阵列基板中，所述第二绝缘层上设置有第二金属层，所述第二金属层具有相互绝缘开的源极区域、漏极区域以及连接区域；
所述源极设置于所述第二金属层的源极区域，所述漏极设置于所述第二金属层的漏极区域，所述平坦层开设有第四通孔，所述公共电极通过所述第四通孔与所述第二金属层的连接区域接触并电连接，所述第二金属层的连接区域与所述遮光金属层电连接。
在本发明所述的阵列基板中，该第二绝缘层以及该第一绝缘层依次被贯穿从而形成第三通孔，所述第二金属层的连接区域通过该第三通孔与所述遮光金属层接触并电连接。
在本发明所述的阵列基板中，所述薄膜晶体管还包括第二绝缘层以及层间介质层，所述半导体层设置于所述第一绝缘层上，所述源极设置于所述第一绝缘层以及所述半导体层上，所述漏极设置于所述第一绝缘层以及所述半导体层上，第二绝缘层设置于所述源极、漏极、所述半导体层以及所述第一绝缘层上，所述栅极设置于所述第二绝缘层上，所述层间介质层设置于所述栅极以及所述第二绝缘层上，所述平坦层设置于所述层间介质层上。
在本发明所述的阵列基板中，所述第一绝缘层以及所述半导体层上设置有第二金属层，所述第二金属层具有相互绝缘的源极区域、漏极区域以及连接区域，所述源极设置于所述第二金属层的源极区域，所示漏极设置于所述第二金属层的漏极区域；所述平坦层、所述层间介质层以及所述第二绝缘层依次被贯穿而形成一第五通孔，所述公共电极层通过该第五通孔与该第二金属层的连接区域接触并电连接，该第二金属层的连接区域与所述遮光金属层电连接。
在本发明所述的阵列基板中，所述第一绝缘层上开设有第三通孔，所述第二金属层的连接区域通过所述第三通孔与所述遮光金属层接触并电连接。
本发明还提供了一种液晶显示装置，包括上述任一项所述的阵列基板。
相对于现有技术，在本发明中，由于该公共电极层与该遮光金属层电连接，因此该遮光金属层具有与公共电极层相同的电位，该像素电极层与漏极电连接，从而该像素电极层与该漏极具有相同的电位，该遮光金属层的第二区域与该漏极正对的从而形成第二存储电容，通过该第二存储电容来提高阵列基板的存储电容，从而提高显示性能，并且不会影响开口率。
附图说明
图1为本发明第一优选实施例中的阵列基板的结构示意图；
图2为图1所示实施例中的阵列基板的另一角度的局部结构示意图；
图3为本发明第二优选实施例中的阵列基板的结构示意图；
图4为图3所示实施例中的阵列基板的另一角度的局部结构示意图；
具体实施方式
以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。
在图中，结构相似的单元是以相同标号表示。
请参照图1，图1为本发明的阵列基板的第一优选实施例的结构示意图。本优选实施例的一种阵列基板，包括：玻璃基板10、遮光金属层20、第一绝缘层30、薄膜晶体管40、平坦层50、公共电极层60、第三绝缘层70以及像素电极层80。其中，该薄膜晶体管40包括半导体层41、第二绝缘层42、栅极43、层间介质层44、源极45以及漏极46。
其中，遮光金属层20设置于玻璃基板10上，该遮光金属层20具有第一区域(未标号)以及第二区域(未标号)；其中，该第一区域与半导体层41对应，主要用于遮光。该第二区域与漏极43对应并正对，主要用于与该漏极43形成第二存储电容。
第一绝缘层30设置于玻璃基板10以及遮光金属层20上，其采用氮化硅/和或二氧化硅采用化学气相沉淀制成。
薄膜晶体管40设置于第一绝缘层30上。具体地，该半导体层41设置于第一绝缘层30上，第二绝缘层42设置于半导体层41上，该栅极43设置于所述第二绝缘层42上，所述层间介质层44设置于所述第二绝缘层42以及所述栅极43上，所述源极45以及所述漏极46设置于所述层间介质层44上。所述源极45通过依次贯穿所述层间介质层44以及所述第二绝缘层42第一通孔与所述半导体层41接触，所述漏极46通过依次贯穿所述层间介质层44以及所述第二绝缘层42的第二通孔与所述半导体41层接触。
该平坦层50设置于该源极45、漏极46以及层间介质层44上。该公共电极层60设置于该平坦层50上，该第三绝缘层70设置于该公共电极层60上，该像素电极层80设置于该第三绝缘层70上。该平坦层50以及该第三绝缘层70开设依次贯穿该平坦层50以及该第三绝缘层70的漏极通孔51，该像素电极层80通过该漏极通孔51与该漏极46接触并电连接。
具体地，同时参照图2所示，该阵列基板还包括设置于该第二绝缘层2上的第二金属层(未标号)，第二金属层具有相互绝缘开的源极区域、漏极区域以及连接区域456；源极45设置于所述第二金属层的源极区域，所述漏极46设置于所述第二金属层的漏极区域，所述平坦层50开设有第四通孔61，所述公共电极层60通过所述第四通孔61与所述第二金属层的连接区域456接触并电连接，所述第二金属层的连接区域456与所述遮光金属层20电连接。该第二绝缘层42以及该第一绝缘层30开设有依次贯穿该第二绝缘层42以及该第一绝缘层30的第三通孔200，所述第二金属层的连接区域456通过该第三通孔200与所述遮光金属层20接触并电连接。
该公共电极层60与该像素电极层80之间形成第一存储电容，并且由于该公共电极层60与该遮光金属层20电连接，因此该遮光金属层20具有与公共电极层60相同的电位，该像素电极层80与漏极46电连接，从而该像素电极层80与该漏极46具有相同的电位，该遮光金属层20的第二区域与该漏极46正对的从而形成第二存储电容，通过该第二存储电容来提高阵列基板的存储电容，从而提高显示性能，并且不会影响开口率。
请参照图3，图3为本发明的阵列基板的第二优选实施例的结构示意图。本优选实施例的一种阵列基板包括包括：玻璃基板10、遮光金属层20、第一绝缘层30、薄膜晶体管40、平坦层50、公共电极层60、第三绝缘层70以及像素电极层80。其中，该薄膜晶体管40包括半导体层41、第二绝缘层42、栅极43、层间介质层44、源极45以及漏极46。
其中，遮光金属层20设置于玻璃基板10上，该遮光金属层20具有第一区域(未标号)以及第二区域(未标号)；其中，该第一区域与半导体层41对应，主要用于遮光。该第二区域与漏极43对应并正对，主要用于与该漏极43形成第二存储电容。
第一绝缘层30设置于玻璃基板10以及遮光金属层20上，其采用氮化硅/和或二氧化硅采用化学气相沉淀制成。
薄膜晶体管40设置于第一绝缘层30上。具体地，该半导体层41设置于第一绝缘层30上，该源极45设置于所述第一绝缘层30以及所述半导体层41上，所述漏极46设置于所述第一绝缘层30以及所述半导体层上41上。第二绝缘层42设置于源极45、漏极46、半导体层41以及第一绝缘层30上。栅极43设置于第二绝缘层42上，层间介质层44设置于栅极43以及第二绝缘层42上。
该平坦层50设置于层间介质层44上。该公共电极层60设置于平坦层50上，该第三绝缘层70设置于该公共电极层60上，该像素电极层80设置于该第三绝缘层70上。该第三绝缘层70、该平坦层50依次被贯穿，从而形成一漏极通孔51，该像素电极层80通过该漏极通孔51与该漏极接触并电连接。
同时参照图4，具体地，在本实施例中，该阵列基板还包括设置于第一绝缘30以及所述半导体层41上的第二金属层(未标号)，所述第二金属层具有相互绝缘的源极区域、漏极区域以及连接区域456，所述源极45设置于所述第二金属层的源极区域，漏极46设置于该第二金属层的漏极区域；所述平坦层50、所述层间介质层44以及所述第二绝缘层42依次被贯穿而形成一第五通孔61，所述公共电极层60通过该第五通孔61与该第二金属层的连接区域456接触并电连接，该第二金属层的连接区域456与所述遮光金属层20电连接。所述第一绝缘层30上开设有第六通孔200，所述第二金属层的连接区域456通过所述第三通孔200与所述遮光金属层20接触并电连接。
在本实施例中，由于该漏极46以及源极45直接形成于该半导体层41上，该该漏极46与遮光金属层20的第二区域之间的绝缘层只有第一绝缘层30，因此，相对于实施例中来说，该遮光金属层20与漏极46之间形成的第二存储电容进一步被提高了，因此，可以进一步提高该阵列基板的存储电容，有利于进一步提高显示特性。
本发明还提供了一种液晶显示装置，其包括上述任一实施例中的阵列基板、液晶层以及彩膜基板，该液晶层位于彩膜基板以及阵列基板之间。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (9)

1.一种阵列基板，其特征在于，包括：
一玻璃基板；
遮光金属层，其设置于所述玻璃基板上，该遮光金属层具有第一区域以及第二区域；
第一绝缘层，其设置于所述玻璃基板以及所述遮光金属层上；薄膜晶体管，其设置于所述第一绝缘层上，该薄膜晶体管具有源极、漏极、栅极以及半导体层；
所述薄膜晶体管还包括第二绝缘层以及层间介质层，所述半导体层设置于所述第一绝缘层上，所述源极设置于所述第一绝缘层以及所述半导体层上，所述漏极设置于所述第一绝缘层以及所述半导体层上，第二绝缘层设置于所述源极、漏极、所述半导体层以及所述第一绝缘层上，所述栅极设置于所述第二绝缘层上，所述层间介质层设置于所述栅极以及所述第二绝缘层上；
像素电极层，其与所述漏极电连接；
公共电极层，其与所述遮光金属层电连接，所述像素电极层与所述公共电极层之间形成第一存储电容；
所述遮光金属层的第一区域用于遮光，所述第一区域与所述半导体层对应，所述遮光金属层的第二区域与所述漏极正对以在该遮光金属层的第二区域与所述漏极之间形成第二存储电容。
2.根据权利要求1所述的阵列基板，其特征在于，所述薄膜晶体管上设置有平坦层，所述公共电极层设置于所述平坦层上，所述公共电极层上设置有第三绝缘层，所述像素电极层设置于所述第三绝缘层上。
3.根据权利要求2所述的阵列基板，其特征在于，所述薄膜晶体管还包括第二绝缘层以及层间介质层，所述半导体层设置于所述第一绝缘层上，所述第二绝缘层设置于所述半导体层上，所述栅极设置于所述第二绝缘层上，所述层间介质层设置于所述第二绝缘层以及所述栅极上，所述源极以及所述漏极设置于所述层间介质层上，所述平坦层位于所述源极、所述漏极以及所述层间介质层上。
4.根据权利要求3所述的阵列基板，其特征在于，所述源极通过依次贯穿所述层间介质层以及所述第二绝缘层第一通孔与所述半导体层接触，所述漏极通过依次贯穿所述层间介质层以及所述第二绝缘层的第二通孔与所述半导体层接触。
5.根据权利要求3或4所述的阵列基板，其特征在于，所述第二绝缘层上设置有第二金属层，所述第二金属层具有相互绝缘开的源极区域、漏极区域以及连接区域；
所述源极设置于所述第二金属层的源极区域，所述漏极设置于所述第二金属层的漏极区域，所述平坦层开设有第四通孔，所述公共电极通过所述第四通孔与所述第二金属层的连接区域接触并电连接，所述第二金属层的连接区域与所述遮光金属层电连接。
6.根据权利要求5所述的阵列基板，其特征在于，该第二绝缘层以及该第一绝缘层依次被贯穿从而形成第三通孔，所述第二金属层的连接区域通过该第三通孔与所述遮光金属层接触并电连接。
7.根据权利要求2所述的阵列基板，其特征在于，所述第一绝缘层以及所述半导体层上设置有第二金属层，所述第二金属层具有相互绝缘的源极区域、漏极区域以及连接区域，所述源极设置于所述第二金属层的源极区域，所示漏极设置于所述第二金属层的漏极区域；
所述平坦层、所述层间介质层以及所述第二绝缘层依次被贯穿而形成一第五通孔，所述公共电极层通过该第五通孔与该第二金属层的连接区域接触并电连接，该第二金属层的连接区域与所述遮光金属层电连接。
8.根据权利要求7所述的阵列基板，其特征在于，所述第一绝缘层上开设有第三通孔，所述第二金属层的连接区域通过所述第三通孔与所述遮光金属层接触并电连接。
9.一种液晶显示装置，其特征在于，包括权利要求1-8任一项所述的阵列基板。
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