WO2016078133A1 - 液晶显示面板及其彩膜阵列基板 - Google Patents

液晶显示面板及其彩膜阵列基板 Download PDF

Info

Publication number
WO2016078133A1
WO2016078133A1 PCT/CN2014/092774 CN2014092774W WO2016078133A1 WO 2016078133 A1 WO2016078133 A1 WO 2016078133A1 CN 2014092774 W CN2014092774 W CN 2014092774W WO 2016078133 A1 WO2016078133 A1 WO 2016078133A1
Authority
WO
WIPO (PCT)
Prior art keywords
color filter
substrate
region
black matrix
thin film
Prior art date
Application number
PCT/CN2014/092774
Other languages
English (en)
French (fr)
Inventor
许勇
Original Assignee
深圳市华星光电技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 深圳市华星光电技术有限公司 filed Critical 深圳市华星光电技术有限公司
Priority to RU2017121355A priority Critical patent/RU2678778C2/ru
Priority to KR1020177013747A priority patent/KR101963058B1/ko
Priority to JP2017525617A priority patent/JP6441479B2/ja
Priority to DE112014007074.2T priority patent/DE112014007074T5/de
Priority to US14/408,286 priority patent/US20160349582A1/en
Priority to GB1705938.7A priority patent/GB2546664B/en
Publication of WO2016078133A1 publication Critical patent/WO2016078133A1/zh

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136222—Colour filters incorporated in the active matrix substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel

Definitions

  • the present invention relates to the field of liquid crystal display technology, and in particular to a color film array substrate and a liquid crystal display panel having the color film array substrate.
  • a color filter film, a pixel electrode and a black matrix are sequentially laminated on the thin film transistor array, and a via hole (CF) is formed on the color filter film. Open) to achieve electrical connection between the pixel electrode and the signal line of the metal material.
  • CF via hole
  • the technical problem to be solved by the embodiments of the present invention is to provide a liquid crystal display panel and a color film array substrate thereof, which can improve the pixel aperture ratio and ensure a good display effect while ensuring the accuracy of the box.
  • a technical solution adopted by the present invention is to provide a color film array substrate including a substrate substrate and a black matrix, a thin film transistor array, a color filter film, and a pixel electrode formed on the substrate substrate.
  • the pixel electrode is stacked on the color filter film
  • the thin film transistor array is stacked on the black matrix and connected to the pixel electrode.
  • the color filter film includes a first region and a second region, and the color filter of the first region
  • the film is disposed adjacent to the black matrix on the substrate substrate, and the color filter film of the second region is disposed on the thin film transistor array, the thickness of the black matrix is smaller than the thickness of the color filter film of the first region, and is larger than the thickness of the second region
  • the thickness of the color filter film; the color filter array substrate further includes an insulating layer and a common electrode, the insulating layer is disposed on the pixel electrode, and the common electrode is stacked on the insulating layer.
  • the color filter array substrate further includes a passivation layer stacked on the thin film transistor array, and the pixel electrode is correspondingly connected to the drain electrode of the thin film transistor array through the color filter film penetrating the second region and the via hole of the passivation layer.
  • the channel holes are formed by dry etching.
  • the difference between the thickness of the black matrix and the color filter film of the second region is 0.5 ⁇ m.
  • another technical solution adopted by the present invention is to provide a color film array substrate including a substrate substrate and a black matrix, a thin film transistor array, a color filter film, and a pixel electrode formed on the substrate substrate.
  • the pixel electrode is stacked on the color filter film
  • the thin film transistor array is stacked on the black matrix and connected to the pixel electrode.
  • the color filter film includes a first region and a second region.
  • the color filter film of the first region is disposed adjacent to the black matrix on the substrate substrate, and the color filter film of the second region is disposed on the thin film transistor array.
  • the thickness of the black matrix is smaller than the thickness of the color filter film of the first region and larger than the thickness of the color filter film of the second region.
  • the color filter array substrate further includes a passivation layer stacked on the thin film transistor array, and the pixel electrode is correspondingly connected to the drain electrode of the thin film transistor array through the color filter film penetrating the second region and the via hole of the passivation layer.
  • the channel holes are formed by dry etching.
  • the difference between the thickness of the black matrix and the color filter film of the second region is 0.5 ⁇ m.
  • the color filter film is disposed on the substrate base adjacent to the black matrix, and the thickness of the black matrix is the same as the thickness of the color filter film.
  • the color filter array substrate further includes a passivation layer stacked on the thin film transistor array, and the pixel electrode is connected to the drain electrode of the thin film transistor array through a via hole penetrating the passivation layer.
  • the color film array substrate further includes an insulating layer and a common electrode, and the insulating layer is disposed on the pixel electrode, and the common electrode is stacked on the insulating layer.
  • a liquid crystal display panel comprising a color filter array substrate and a common substrate of the pair of boxes, and a liquid crystal layer sandwiched between the two, the color film array substrate
  • the substrate comprises a substrate, a black matrix formed on the substrate substrate, a thin film transistor array, a color filter film, and a pixel electrode.
  • the pixel electrode is stacked on the color filter film, and the thin film transistor array is stacked on the black matrix and matched with the pixel.
  • the electrodes are connected.
  • the common substrate is provided with a common electrode on the surface of the color filter array substrate.
  • the color filter film includes a first region and a second region.
  • the color filter film of the first region is disposed adjacent to the black matrix on the substrate substrate, and the color filter film of the second region is disposed on the thin film transistor array.
  • the thickness of the black matrix is smaller than the thickness of the color filter film of the first region and larger than the thickness of the color filter film of the second region.
  • the color filter array substrate further includes a passivation layer stacked on the thin film transistor array, and the pixel electrode is correspondingly connected to the drain electrode of the thin film transistor array through the color filter film penetrating the second region and the via hole of the passivation layer.
  • the channel holes are formed by dry etching.
  • the difference between the thickness of the black matrix and the color filter film of the second region is 0.5 ⁇ m.
  • the color filter film is disposed on the substrate base adjacent to the black matrix, and the thickness of the black matrix is the same as the thickness of the color filter film.
  • the color filter array substrate further includes a passivation layer stacked on the thin film transistor array, and the pixel electrode is connected to the drain electrode of the thin film transistor array through a via hole penetrating the passivation layer.
  • a thin film transistor array of a color film array substrate is stacked on a black matrix and connected to a pixel electrode, and the black matrix pad is used to form a thin film transistor array.
  • the height of the pixel electrode disposed on the color filter film is similar, so that no hole is formed in the color filter film, and the gas contained in the via hole is prevented from leaking to the liquid crystal layer to generate bubbles, thereby ensuring good display effect. And can also improve the accuracy of the box and increase the pixel aperture rate.
  • FIG. 1 is a cross-sectional view showing the structure of a color filter array substrate according to a first embodiment of the present invention
  • Figure 2 is a cross-sectional view showing the structure of a color filter array substrate according to a second embodiment of the present invention.
  • the color filter array substrate 10 includes a substrate substrate 11 and a black matrix 12, a thin film transistor array 13, a color filter film 14, and a pixel electrode 15 formed on the substrate substrate 11.
  • the pixel electrodes 15 are stacked.
  • the thin film transistor array 13 is stacked on the black matrix 12 and connected (electrically connected) to the pixel electrode 15. among them:
  • the color filter film 14 includes a first region A and a second region B.
  • the color filter film 14 located in the first region A is disposed adjacent to the black matrix 12 on the substrate substrate 11, and the color filter is located in the second region B.
  • the film 14 is disposed on the thin film transistor array 13.
  • the thickness of the black matrix 12 is smaller than the thickness of the color filter film 14 located in the first region A and larger than the thickness of the color filter film 14 located in the second region B.
  • the black matrix 12 and the second region B are preferably
  • the difference in thickness of the color filter film 14 is 0.5 ⁇ m, and the color filter film 14 is equal in pitch to the substrate substrate 11 at the upper surfaces of the first region A and the second region B.
  • Thin film transistor array (Thin Film Transistor (TFT) 13 includes a gate electrode 131 formed on a substrate body 11, a gate insulating layer 132 formed on the gate electrode 131, a semiconductor layer 133 formed on the gate insulating layer 132, and a contact formed on the semiconductor layer 133.
  • the color filter array substrate 10 of the present embodiment further includes a passivation layer 137 stacked on the source/drain electrode layer of the thin film transistor array 13.
  • the pixel electrode 15 is formed on the passivation layer 137 and is electrically connected corresponding to the drain electrode 136 of the thin film transistor array 13. Specifically, the pixel electrode 15 is electrically connected to the drain electrode 136 through a via hole penetrating through the color filter film 14 and the passivation layer 137 located in the second region B. Among them, the channel holes are preferably formed by dry etching.
  • the gate electrode 131 of the thin film transistor array 13 is electrically connected to the scan line formed on the color filter array substrate 10, and the source electrode 135 of the thin film transistor array 13 is electrically connected to the data line formed on the color filter array substrate 10.
  • the scan line and the data line vertically intersect to form a pixel display area in which the pixel electrode 15 is located.
  • the thin film transistor array 13 is designed to be stacked on the black matrix 12, and the thin film transistor array 13 is raised by the black matrix 12 so as to be close to the pixel electrode 15 disposed on the color filter film 14, that is, the thin film transistor array 13 is There is no large segment difference between the pixel electrode 15 and the pixel electrode 15 .
  • the thin film transistor array 13 and the pixel electrode 15 can be electrically connected without opening a hole in the color filter film 14 , thereby avoiding The gas placed in the via leaks to the liquid crystal layer to generate bubbles, which ensures a good display effect, and can also improve the accuracy of the box and increase the pixel aperture ratio.
  • FIG. 2 is a cross-sectional view showing the structure of a color filter array substrate according to a second embodiment of the present invention.
  • the color filter array substrate 20 includes a substrate substrate 21, a black matrix 22 formed on the substrate substrate 21, a thin film transistor array 23, a color filter film 24, and a pixel electrode 25.
  • the pixel electrodes 25 are stacked.
  • the thin film transistor array 23 is stacked on the black matrix 22 and connected (electrically connected) to the pixel electrode 25. among them:
  • the color filter film 24 is disposed adjacent to the black matrix 22 on the substrate body 21, and the thickness of the black matrix 22 is the same as the thickness of the color filter film 24.
  • the structure of the thin film transistor array 23 is the same as that of the thin film transistor array 13 shown in FIG.
  • the color filter array substrate 20 further includes a passivation layer 237 stacked on the thin film transistor array 23, and the pixel electrode 25 is formed on the passivation layer 237 and electrically connected to the drain electrode 236 of the thin film transistor array 23, specifically, the pixel electrode. 25 is electrically connected to the drain electrode 236 of the thin film transistor array 23 through a via hole penetrating through the passivation layer 237.
  • the difference from the first embodiment shown in FIG. 1 is that the present embodiment directly passes through the black matrix 22 so that there is no large segment difference between the thin film transistor array 23 and the pixel electrode 25, and there is no need to set the second region B.
  • the primary object of the embodiments of the present invention is to design a thin film transistor array stacked on a black matrix and connected to a pixel electrode, and the black matrix pad is used to form a thin film transistor array and the pixel disposed on the color filter film.
  • the electrodes are similar in height, so that there is no need to open a hole in the color filter film, which can prevent the gas contained in the via hole from leaking to the liquid crystal layer to generate bubbles, ensuring good display effect, and improving the precision of the box and lifting the pixel. Opening ratio.
  • a color film array substrate having other structures, for example, a color film array substrate (color film array substrate 10, 20) further includes an insulating layer and a common electrode, and the insulating layer is disposed on the pixel. On the electrodes (pixel electrodes 15, 25), the common electrode is stacked on the insulating layer. It should be noted that there is no need to provide a common electrode on the other substrate of the liquid crystal display panel having the color filter array substrate.
  • the embodiment of the invention further provides a liquid crystal display panel comprising a common substrate for the box and the color filter array substrate of the above embodiment and a liquid crystal layer interposed therebetween. It should be noted that when the common electrode is not disposed on the color filter array substrate, the common substrate is provided with a common electrode on the surface of the color filter array substrate.

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Optical Filters (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

一种液晶显示面板及其彩膜阵列基板（10）。彩膜阵列基板（10）包括形成于衬底基体（11）上的黑矩阵（12）、薄膜晶体管阵列（13）、彩色滤光膜（14）以及像素电极（15），像素电极（15）叠设于彩色滤光膜（14）上，薄膜晶体管阵列（13）叠设于黑矩阵（12）上且与像素电极（15）相连。通过上述方式，无需在彩色滤光膜上开设过孔，可避免容置于过孔的气体外泄至液晶层而产生泡影，保证良好的显示效果，并且能提高对盒精度及提升像素开口率。

Description

液晶显示面板及其彩膜阵列基板
【技术领域】
本发明涉及液晶显示技术领域，具体而言涉及一种彩膜阵列基板以及具有该彩膜阵列基板的液晶显示面板。
【背景技术】
随着业界对液晶显示面板的对盒精度要求越来越高，传统的对盒工艺已经无法满足高精度要求，基于此，通过在阵列基板上制作彩色滤光膜和黑矩阵的彩膜阵列基板逐渐发展起来。
现有的彩膜阵列基板，其薄膜晶体管阵列上依次层叠有彩色滤光膜、像素电极和黑矩阵，并且彩色滤光膜上开设有过孔（CF Open），以实现像素电极和金属材质的信号线之间的电连接。然而，若要保证良好的电连接就需要尺寸较大的过孔，这无疑会降低像素开口率，并且容置于过孔的气体在对盒制程后极易因震动而外泄，并扩散至液晶层，从而产生泡影（Bubble）并形成黑团，影响显示效果。
【发明内容】
有鉴于此，本发明实施例所要解决的技术问题是提供一种液晶显示面板及其彩膜阵列基板，能够在确保对盒精度的同时，提升像素开口率，并保证良好的显示效果。
为解决上述技术问题，本发明采用的一个技术方案是：提供一种彩膜阵列基板，包括衬底基体以及形成于衬底基体上的黑矩阵、薄膜晶体管阵列、彩色滤光膜、像素电极，其中，像素电极叠设于彩色滤光膜上，薄膜晶体管阵列叠设于黑矩阵上且与像素电极相连；其中，彩色滤光膜包括第一区域和第二区域，第一区域的彩色滤光膜与黑矩阵相邻设置于衬底基体上，第二区域的彩色滤光膜设置于薄膜晶体管阵列上，黑矩阵的厚度小于第一区域的彩色滤光膜的厚度，且大于第二区域的彩色滤光膜的厚度；彩膜阵列基板还包括绝缘层和公共电极，绝缘层叠设于像素电极上，公共电极叠设于绝缘层上。
其中，彩膜阵列基板还包括叠设于薄膜晶体管阵列上的钝化层，像素电极通过贯穿第二区域的彩色滤光膜以及钝化层的通道孔与薄膜晶体管阵列的漏电极对应相连。
其中，通过干法刻蚀的方式形成通道孔。
其中，黑矩阵与第二区域的彩色滤光膜的厚度之差为0.5微米。
为解决上述技术问题，本发明采用的另一个技术方案是：提供一种彩膜阵列基板，包括衬底基体以及形成于衬底基体上的黑矩阵、薄膜晶体管阵列、彩色滤光膜、像素电极，其中，像素电极叠设于彩色滤光膜上，薄膜晶体管阵列叠设于黑矩阵上且与像素电极相连。
其中，彩色滤光膜包括第一区域和第二区域，第一区域的彩色滤光膜与黑矩阵相邻设置于衬底基体上，第二区域的彩色滤光膜设置于薄膜晶体管阵列上，黑矩阵的厚度小于第一区域的彩色滤光膜的厚度，且大于第二区域的彩色滤光膜的厚度。
其中，彩膜阵列基板还包括叠设于薄膜晶体管阵列上的钝化层，像素电极通过贯穿第二区域的彩色滤光膜以及钝化层的通道孔与薄膜晶体管阵列的漏电极对应相连。
其中，通过干法刻蚀的方式形成通道孔。
其中，黑矩阵与第二区域的彩色滤光膜的厚度之差为0.5微米。
其中，彩色滤光膜与黑矩阵相邻设置于衬底基体上，且黑矩阵的厚度与彩色滤光膜的厚度相同。
其中，彩膜阵列基板还包括叠设于薄膜晶体管阵列上的钝化层，像素电极通过贯穿钝化层的通道孔与薄膜晶体管阵列的漏电极相连。
其中，彩膜阵列基板还包括绝缘层和公共电极，绝缘层叠设于像素电极上，公共电极叠设于绝缘层上。
为解决上述技术问题，本发明采用的又一个技术方案是：提供一种液晶显示面板，包括对盒的彩膜阵列基板和公共基板以及夹设于两者之间的液晶层，彩膜阵列基板包括衬底基体以及形成于衬底基体上的黑矩阵、薄膜晶体管阵列、彩色滤光膜、像素电极，像素电极叠设于彩色滤光膜上，薄膜晶体管阵列叠设于黑矩阵上且与像素电极相连。
其中，公共基板朝向彩膜阵列基板的表面上设置有公共电极。
其中，彩色滤光膜包括第一区域和第二区域，第一区域的彩色滤光膜与黑矩阵相邻设置于衬底基体上，第二区域的彩色滤光膜设置于薄膜晶体管阵列上，黑矩阵的厚度小于第一区域的彩色滤光膜的厚度，且大于第二区域的彩色滤光膜的厚度。
其中，彩膜阵列基板还包括叠设于薄膜晶体管阵列上的钝化层，像素电极通过贯穿第二区域的彩色滤光膜以及钝化层的通道孔与薄膜晶体管阵列的漏电极对应相连。
其中，通过干法刻蚀的方式形成通道孔。
其中，黑矩阵与第二区域的彩色滤光膜的厚度之差为0.5微米。
其中，彩色滤光膜与黑矩阵相邻设置于衬底基体上，且黑矩阵的厚度与彩色滤光膜的厚度相同。
其中，彩膜阵列基板还包括叠设于薄膜晶体管阵列上的钝化层，像素电极通过贯穿钝化层的通道孔与薄膜晶体管阵列的漏电极相连。
通过上述技术方案，本发明实施例所产生的有益效果是：本发明实施例设计彩膜阵列基板的薄膜晶体管阵列叠设于黑矩阵上且与像素电极相连，通过黑矩阵垫高薄膜晶体管阵列使之与设置于彩色滤光膜上的像素电极高度相近，从而无需在彩色滤光膜上开设过孔，可避免容置于过孔的气体外泄至液晶层而产生泡影，保证良好的显示效果，并且还能提高对盒精度以及提升像素开口率。
【附图说明】
图1是本发明第一实施例的彩膜阵列基板的结构剖视图；
图2是本发明第二实施例的彩膜阵列基板的结构剖视图。
【具体实施方式】
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，本发明以下所描述的实施例仅仅是本发明的一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其它实施例，都属于本发明保护的范围。
图1是本发明第一实施例的彩膜阵列基板的结构剖视图。请参阅图1所示，彩膜阵列基板10包括衬底基体11以及形成于衬底基体11上的黑矩阵12、薄膜晶体管阵列13、彩色滤光膜14以及像素电极15，像素电极15叠设于彩色滤光膜14上，薄膜晶体管阵列13叠设于黑矩阵12上且与像素电极15相连（电连接）。其中：
彩色滤光膜14包括第一区域A和第二区域B，位于第一区域A的彩色滤光膜14与黑矩阵12相邻设置于衬底基体11上，位于第二区域B的彩色滤光膜14设置于薄膜晶体管阵列13上。黑矩阵12的厚度小于位于第一区域A的彩色滤光膜14的厚度，且大于位于第二区域B的彩色滤光膜14的厚度，本实施例优选黑矩阵12与位于第二区域B的彩色滤光膜14的厚度之差为0.5微米，彩色滤光膜14在第一区域A和第二区域B的上表面与衬底基体11的间距相等。
薄膜晶体管阵列（Thin Film Transistor，TFT）13包括形成于衬底基体11上的栅电极131、形成于栅电极131上的栅绝缘层132、形成于栅绝缘层132上的半导体层133、形成于半导体层133上的接触层134、形成于接触层134上的且由源电极135和漏电极136组成的源漏电极层。进一步地，本实施例的彩膜阵列基板10还包括叠设于薄膜晶体管阵列13的源漏电极层上的钝化层137。
像素电极15形成于钝化层137上且与薄膜晶体管阵列13的漏电极136对应电连接。具体地，像素电极15通过贯穿位于第二区域B的彩色滤光膜14以及钝化层137的通道孔与漏电极136对应电连接。其中，优选通过干法刻蚀的方式形成通道孔。
另外，薄膜晶体管阵列13的栅电极131与形成于彩膜阵列基板10上的扫描线对应电连接，薄膜晶体管阵列13的源电极135与形成于彩膜阵列基板10上的数据线对应电连接，扫描线和数据线垂直交叉形成像素电极15所在的像素显示区域。
本实施例设计薄膜晶体管阵列13叠设于黑矩阵12上，通过黑矩阵12垫高薄膜晶体管阵列13使之与设置于彩色滤光膜14上的像素电极15高度相近，即使得薄膜晶体管阵列13与像素电极15之间不存在较大的段位差，相较于现有技术，无需在彩色滤光膜14上开设过孔，即可实现薄膜晶体管阵列13与像素电极15电连接，从而可避免容置于过孔的气体外泄至液晶层而产生泡影，保证良好的显示效果，并且还能提高对盒精度以及提升像素开口率。
图2是本发明第二实施例的彩膜阵列基板的结构剖视图。请参阅图2所示，彩膜阵列基板20包括衬底基体21以及形成于衬底基体21上的黑矩阵22、薄膜晶体管阵列23、彩色滤光膜24以及像素电极25，像素电极25叠设于彩色滤光膜24上，薄膜晶体管阵列23叠设于黑矩阵22上且与像素电极25相连（电连接）。其中：
彩色滤光膜24与黑矩阵22相邻设置于衬底基体21上，且黑矩阵22的厚度与彩色滤光膜24的厚度相同。
薄膜晶体管阵列23的结构与图1所示薄膜晶体管阵列13的结构相同。彩膜阵列基板20还包括叠设于薄膜晶体管阵列23上的钝化层237，像素电极25形成于钝化层237上且与薄膜晶体管阵列23的漏电极236对应电连接，具体地，像素电极25通过贯穿钝化层237的通道孔与薄膜晶体管阵列23的漏电极236对应电连接。
与图1所示第一实施例的不同之处在于，本实施例直接通过黑矩阵22使得薄膜晶体管阵列23与像素电极25之间不存在较大的段位差，而无需设置第二区域B的彩色滤光膜14。
承上所述，本发明实施例的首要目的是：设计薄膜晶体管阵列叠设于黑矩阵上且与像素电极相连，通过黑矩阵垫高薄膜晶体管阵列使之与设置于彩色滤光膜上的像素电极高度相近，从而无需在彩色滤光膜上开设过孔，可避免容置于过孔的气体外泄至液晶层而产生泡影，保证良好的显示效果，并且还能提高对盒精度以及提升像素开口率。
基于上述首要发明目的，本发明的其它实施例可以设置彩膜阵列基板具有其他结构，例如：彩膜阵列基板（彩膜阵列基板10、20）还包括绝缘层和公共电极，绝缘层叠设于像素电极（像素电极15、25）上，公共电极叠设于绝缘层上，需要说明的是，此时具有该彩膜阵列基板的液晶显示面板的另一基板上无需设置公共电极。
本发明实施例还提供一种液晶显示面板，包括对盒的公共基板以及上述实施例的彩膜阵列基板以及夹设于两者之间的液晶层。需要指出的是，当彩膜阵列基板上未设置公共电极时，公共基板朝向彩膜阵列基板的表面上设置有公共电极。
再次说明，以上所述仅为本发明的实施例，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，例如各实施例之间技术特征的相互结合，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (20)

  1. 一种彩膜阵列基板，其中，所述彩膜阵列基板包括衬底基体以及形成于所述衬底基体上的黑矩阵、薄膜晶体管阵列、彩色滤光膜、像素电极，其中，所述像素电极叠设于所述彩色滤光膜上，所述薄膜晶体管阵列叠设于所述黑矩阵上且与所述像素电极相连；
    其中，所述彩色滤光膜包括第一区域和第二区域，所述第一区域的彩色滤光膜与所述黑矩阵相邻设置于所述衬底基体上，所述第二区域的彩色滤光膜设置于所述薄膜晶体管阵列上，所述黑矩阵的厚度小于所述第一区域的彩色滤光膜的厚度，且大于所述第二区域的彩色滤光膜的厚度；
    所述彩膜阵列基板还包括绝缘层和公共电极，所述绝缘层叠设于所述像素电极上，所述公共电极叠设于所述绝缘层上。
  2. 根据权利要求1所述的彩膜阵列基板，其中，所述彩膜阵列基板还包括叠设于所述薄膜晶体管阵列上的钝化层，所述像素电极通过贯穿所述第二区域的彩色滤光膜以及所述钝化层的通道孔与所述薄膜晶体管阵列的漏电极对应相连。
  3. 根据权利要求2所述的彩膜阵列基板，其中，通过干法刻蚀的方式形成所述通道孔。
  4. 根据权利要求1所述的彩膜阵列基板，其中，所述黑矩阵与所述第二区域的彩色滤光膜的厚度之差为0.5微米。
  5. 一种彩膜阵列基板，其中，所述彩膜阵列基板包括衬底基体以及形成于所述衬底基体上的黑矩阵、薄膜晶体管阵列、彩色滤光膜、像素电极，其中，所述像素电极叠设于所述彩色滤光膜上，所述薄膜晶体管阵列叠设于所述黑矩阵上且与所述像素电极相连。
  6. 根据权利要求5所述的彩膜阵列基板，其中，所述彩色滤光膜包括第一区域和第二区域，所述第一区域的彩色滤光膜与所述黑矩阵相邻设置于所述衬底基体上，所述第二区域的彩色滤光膜设置于所述薄膜晶体管阵列上，所述黑矩阵的厚度小于所述第一区域的彩色滤光膜的厚度，且大于所述第二区域的彩色滤光膜的厚度。
  7. 根据权利要求6所述的彩膜阵列基板，其中，所述彩膜阵列基板还包括叠设于所述薄膜晶体管阵列上的钝化层，所述像素电极通过贯穿所述第二区域的彩色滤光膜以及所述钝化层的通道孔与所述薄膜晶体管阵列的漏电极对应相连。
  8. 根据权利要求7所述的彩膜阵列基板，其中，通过干法刻蚀的方式形成所述通道孔。
  9. 根据权利要求6所述的彩膜阵列基板，其中，所述黑矩阵与所述第二区域的彩色滤光膜的厚度之差为0.5微米。
  10. 根据权利要求5所述的彩膜阵列基板，其中，所述彩色滤光膜与所述黑矩阵相邻设置于所述衬底基体上，且所述黑矩阵的厚度与所述彩色滤光膜的厚度相同。
  11. 根据权利要求10所述的彩膜阵列基板，其中，所述彩膜阵列基板还包括叠设于所述薄膜晶体管阵列上的钝化层，所述像素电极通过贯穿所述钝化层的通道孔与所述薄膜晶体管阵列的漏电极相连。
  12. 根据权利要求5所述的彩膜阵列基板，其中，所述彩膜阵列基板还包括绝缘层和公共电极，所述绝缘层叠设于所述像素电极上，所述公共电极叠设于所述绝缘层上。
  13. 一种液晶显示面板，包括对盒的彩膜阵列基板和公共基板以及夹设于两者之间的液晶层，其中，所述彩膜阵列基板包括衬底基体以及形成于所述衬底基体上的黑矩阵、薄膜晶体管阵列、彩色滤光膜、像素电极，其中，所述像素电极叠设于所述彩色滤光膜上，所述薄膜晶体管阵列叠设于所述黑矩阵上且与所述像素电极相连。
  14. 根据权利要求13所述的液晶显示面板，其中，所述公共基板朝向所述彩膜阵列基板的表面上设置有公共电极。
  15. 根据权利要求13所述的液晶显示面板，其中，所述彩色滤光膜包括第一区域和第二区域，所述第一区域的彩色滤光膜与所述黑矩阵相邻设置于所述衬底基体上，所述第二区域的彩色滤光膜设置于所述薄膜晶体管阵列上，所述黑矩阵的厚度小于所述第一区域的彩色滤光膜的厚度，且大于所述第二区域的彩色滤光膜的厚度。
  16. 根据权利要求15所述的液晶显示面板，其中，所述彩膜阵列基板还包括叠设于所述薄膜晶体管阵列上的钝化层，所述像素电极通过贯穿所述第二区域的彩色滤光膜以及所述钝化层的通道孔与所述薄膜晶体管阵列的漏电极对应相连。
  17. 根据权利要求16所述的液晶显示面板，其中，通过干法刻蚀的方式形成所述通道孔。
  18. 根据权利要求15所述的液晶显示面板，其中，所述黑矩阵与所述第二区域的彩色滤光膜的厚度之差为0.5微米。
  19. 根据权利要求14所述的液晶显示面板，其中，所述彩色滤光膜与所述黑矩阵相邻设置于所述衬底基体上，且所述黑矩阵的厚度与所述彩色滤光膜的厚度相同。
  20. 根据权利要求19所述的液晶显示面板，其中，所述彩膜阵列基板还包括叠设于所述薄膜晶体管阵列上的钝化层，所述像素电极通过贯穿所述钝化层的通道孔与所述薄膜晶体管阵列的漏电极相连。
PCT/CN2014/092774 2014-11-21 2014-12-02 液晶显示面板及其彩膜阵列基板 WO2016078133A1 (zh)

Priority Applications (6)

Application Number Priority Date Filing Date Title
RU2017121355A RU2678778C2 (ru) 2014-11-21 2014-12-02 Панель жидкокристаллического дисплея и его подложка цветной пленки
KR1020177013747A KR101963058B1 (ko) 2014-11-21 2014-12-02 액정 표시패널 및 그 컬러 필름 어레이 기판
JP2017525617A JP6441479B2 (ja) 2014-11-21 2014-12-02 液晶表示パネル及びそのカラーフィルタ配列基板
DE112014007074.2T DE112014007074T5 (de) 2014-11-21 2014-12-02 Flüssigkristallanzeigefeld und dessen Farbfilm-Array-Substrat
US14/408,286 US20160349582A1 (en) 2014-11-21 2014-12-02 Liquid Crystal Display Panel and Color Film Substrate thereof
GB1705938.7A GB2546664B (en) 2014-11-21 2014-12-02 Liquid crystal display panel and color film substrate thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201410677401.0 2014-11-21
CN201410677401.0A CN104375344B (zh) 2014-11-21 2014-11-21 液晶显示面板及其彩膜阵列基板

Publications (1)

Publication Number Publication Date
WO2016078133A1 true WO2016078133A1 (zh) 2016-05-26

Family

ID=52554362

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2014/092774 WO2016078133A1 (zh) 2014-11-21 2014-12-02 液晶显示面板及其彩膜阵列基板

Country Status (8)

Country Link
US (1) US20160349582A1 (zh)
JP (1) JP6441479B2 (zh)
KR (1) KR101963058B1 (zh)
CN (1) CN104375344B (zh)
DE (1) DE112014007074T5 (zh)
GB (1) GB2546664B (zh)
RU (1) RU2678778C2 (zh)
WO (1) WO2016078133A1 (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104765186A (zh) * 2015-03-24 2015-07-08 深圳市华星光电技术有限公司 显示面板及显示装置
CN104965366B (zh) * 2015-07-15 2018-11-20 深圳市华星光电技术有限公司 阵列彩膜集成式液晶显示面板的制作方法及其结构
CN106597769A (zh) * 2016-12-28 2017-04-26 深圳市华星光电技术有限公司 一种阵列基板及其制造方法
CN106842744B (zh) * 2017-02-14 2019-10-25 深圳市华星光电技术有限公司 一种阵列基板及其制作方法
CN106773271A (zh) * 2017-03-02 2017-05-31 武汉华星光电技术有限公司 Coa阵列基板以及液晶显示面板
CN110412803A (zh) * 2018-04-28 2019-11-05 咸阳彩虹光电科技有限公司 一种coa阵列基板及其制备方法和液晶显示面板
CN108873517B (zh) * 2018-06-25 2023-10-20 厦门天马微电子有限公司 一种阵列基板、显示面板以及显示装置
CN109755285B (zh) 2019-02-01 2022-12-06 合肥鑫晟光电科技有限公司 显示面板及其制造方法和显示装置
JP7226156B2 (ja) 2019-07-11 2023-02-21 オムロン株式会社 無人搬送車
CN111048559B (zh) * 2019-11-25 2022-11-22 信利（惠州）智能显示有限公司 显示屏、盖板及盖板的制作方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101149546A (zh) * 2006-09-22 2008-03-26 北京京东方光电科技有限公司 一种薄膜晶体管在彩膜之上的液晶显示器件及其制造方法
JP2012150323A (ja) * 2011-01-20 2012-08-09 Toppan Printing Co Ltd カラーフィルタの欠陥修正方法及びカラーフィルタ基板
CN103353683A (zh) * 2013-06-26 2013-10-16 京东方科技集团股份有限公司 一种阵列基板以及包括该阵列基板的显示装置

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0775931B1 (en) * 1995-11-21 2005-10-05 Samsung Electronics Co., Ltd. Method of manufacturing a liquid crystal display
JP3566028B2 (ja) * 1997-05-15 2004-09-15 シャープ株式会社 液晶表示装置及びその製造方法
US6759281B1 (en) * 1999-04-26 2004-07-06 Samsung Electronics Co., Ltd. Method of making a display switch having a contact hole through a passivation layer and a color filter
JP3576871B2 (ja) * 1999-06-04 2004-10-13 日本電気株式会社 アクティブマトリクス型液晶表示装置
KR100808466B1 (ko) * 2001-07-30 2008-03-03 엘지.필립스 엘시디 주식회사 액정 표시 장치용 어레이 기판 및 그의 제조 방법
TWI230292B (en) * 2002-12-09 2005-04-01 Lg Philips Lcd Co Ltd Array substrate having color filter on thin film transistor structure for LCD device and method of fabricating the same
KR100752950B1 (ko) * 2004-04-30 2007-08-30 엘지.필립스 엘시디 주식회사 씨오티구조 액정표시장치 및 그 제조방법
GB2421833B (en) * 2004-12-31 2007-04-04 Lg Philips Lcd Co Ltd Liquid crystal display device and method for fabricating the same
KR20070001505A (ko) * 2005-06-29 2007-01-04 엘지.필립스 엘시디 주식회사 액정패널 및 그 제조방법
CN100582899C (zh) * 2006-09-22 2010-01-20 北京京东方光电科技有限公司 一种彩色滤光层在薄膜晶体管之上的液晶显示器件及其制造方法
CN100514609C (zh) * 2006-10-19 2009-07-15 中华映管股份有限公司 彩色滤光片及其制造方法
JP5245801B2 (ja) * 2008-01-10 2013-07-24 大日本印刷株式会社 カラーフィルタ
KR101615926B1 (ko) * 2009-07-28 2016-04-28 삼성디스플레이 주식회사 액정표시장치 및 이의 제조방법
CN102023435B (zh) * 2009-09-23 2013-01-02 北京京东方光电科技有限公司 液晶显示器及其制造方法
KR101607636B1 (ko) * 2009-11-23 2016-04-12 삼성디스플레이 주식회사 액정 표시 장치
KR101951725B1 (ko) * 2012-01-04 2019-02-27 삼성디스플레이 주식회사 표시 기판, 이의 제조 방법 및 이를 포함하는 표시 장치
CN102681276B (zh) * 2012-02-28 2014-07-09 京东方科技集团股份有限公司 阵列基板及其制造方法以及包括该阵列基板的显示装置
JP6037753B2 (ja) * 2012-10-02 2016-12-07 株式会社ジャパンディスプレイ 液晶表示装置
US9201276B2 (en) * 2012-10-17 2015-12-01 Apple Inc. Process architecture for color filter array in active matrix liquid crystal display
CN103309081B (zh) * 2013-05-30 2016-12-28 京东方科技集团股份有限公司 阵列基板及其制造方法、显示装置
US20150116640A1 (en) * 2013-10-30 2015-04-30 Shenzhen China Star Optoelectronics Technology Co., Ltd. Liquid crystal component, method for fabricating the same, and liquid crystal display having the same
KR102150033B1 (ko) * 2014-01-14 2020-10-15 삼성디스플레이 주식회사 표시 패널 및 이의 제조 방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101149546A (zh) * 2006-09-22 2008-03-26 北京京东方光电科技有限公司 一种薄膜晶体管在彩膜之上的液晶显示器件及其制造方法
JP2012150323A (ja) * 2011-01-20 2012-08-09 Toppan Printing Co Ltd カラーフィルタの欠陥修正方法及びカラーフィルタ基板
CN103353683A (zh) * 2013-06-26 2013-10-16 京东方科技集团股份有限公司 一种阵列基板以及包括该阵列基板的显示装置

Also Published As

Publication number Publication date
GB2546664A (en) 2017-07-26
RU2017121355A3 (zh) 2018-12-19
GB2546664B (en) 2021-07-07
US20160349582A1 (en) 2016-12-01
GB201705938D0 (en) 2017-05-31
CN104375344A (zh) 2015-02-25
JP2017538154A (ja) 2017-12-21
KR101963058B1 (ko) 2019-03-27
RU2017121355A (ru) 2018-12-19
RU2678778C2 (ru) 2019-02-01
DE112014007074T5 (de) 2017-08-24
JP6441479B2 (ja) 2018-12-19
CN104375344B (zh) 2017-09-15
KR20170072304A (ko) 2017-06-26

Similar Documents

Publication Publication Date Title
WO2016078133A1 (zh) 液晶显示面板及其彩膜阵列基板
WO2016155100A1 (zh) 液晶显示装置及其液晶显示面板
WO2014036730A1 (zh) 一种显示面板及液晶显示装置
WO2017197693A1 (zh) 3t像素结构及液晶显示装置
WO2018006479A1 (zh) 阵列基板及其制作方法、以及液晶显示面板
WO2018032551A1 (zh) 液晶显示面板及液晶显示装置
WO2013170540A1 (zh) 一种液晶显示面板
WO2015006959A1 (zh) 显示面板及显示装置
WO2016078101A1 (zh) 显示面板及其制造方法
WO2017015993A1 (zh) 液晶显示器及其液晶面板
WO2017185428A1 (zh) 阵列基板及液晶显示装置
WO2019041553A1 (zh) 像素结构垂直沟道有机薄膜晶体管及其制作方法
WO2019041476A1 (zh) 一种阵列基板及其制作方法、显示面板
WO2018040468A1 (zh) 显示器及其显示面板
WO2022156010A1 (zh) 阵列基板及显示面板
WO2017101161A1 (zh) 基于hsd结构的显示面板和显示装置
WO2019015077A1 (zh) 一种阵列基板及其制造方法、液晶显示装置
WO2016173021A1 (zh) 显示面板及显示装置
WO2016145684A1 (zh) 显示面板及显示装置
WO2016041216A1 (zh) 一种液晶显示面板
WO2018214210A1 (zh) 一种阵列基板及其制作方法
WO2016078110A1 (zh) 显示面板及显示装置
WO2017117827A1 (zh) 液晶显示面板、tft基板及其制造方法
WO2017128459A1 (zh) 一种阵列基板及触摸屏
WO2018000483A1 (zh) 彩膜基板及其制造方法

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 14408286

Country of ref document: US

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 14906607

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 201705938

Country of ref document: GB

Kind code of ref document: A

Free format text: PCT FILING DATE = 20141202

ENP Entry into the national phase

Ref document number: 2017525617

Country of ref document: JP

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 112014007074

Country of ref document: DE

ENP Entry into the national phase

Ref document number: 20177013747

Country of ref document: KR

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

ENP Entry into the national phase

Ref document number: 2017121355

Country of ref document: RU

Kind code of ref document: A

122 Ep: pct application non-entry in european phase

Ref document number: 14906607

Country of ref document: EP

Kind code of ref document: A1