CN106842744B - 一种阵列基板及其制作方法 - Google Patents

一种阵列基板及其制作方法 Download PDF

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CN106842744B
CN106842744B CN201710078596.0A CN201710078596A CN106842744B CN 106842744 B CN106842744 B CN 106842744B CN 201710078596 A CN201710078596 A CN 201710078596A CN 106842744 B CN106842744 B CN 106842744B
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CN106842744A (zh
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衣志光
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TCL Huaxing Photoelectric Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to EP17896891.3A priority patent/EP3584838A4/en
Priority to KR1020197026136A priority patent/KR102316172B1/ko
Priority to US16/485,654 priority patent/US10859881B2/en
Priority to JP2019543211A priority patent/JP6829773B2/ja
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Abstract

本发明提供一种阵列基板及其制作方法，其中该阵列基板包括衬底基板、栅极层、栅极绝缘层、源漏极层、第一钝化层、色阻层与第二钝化层，其中，所述源漏极层对应上方设有钝化层过孔，所述钝化层过孔贯穿所述第二钝化层、所述色阻层与所述第一钝化层，其底部与所述源漏极层的表面接触，所述钝化层过孔的第一侧面与所述第二钝化层和所述第一钝化层相通，所述钝化层过孔的第二侧面与所述第二钝化层、所述色阻层和所述第一钝化层相通，所述色阻层内的气体从所述第二侧面上的所述色阻层的表面析出。本发明实现了在成盒制程前，将色阻层内的气体被全部排出的目的。

Description

一种阵列基板及其制作方法
【技术领域】
本发明涉及液晶显示领域，特别涉及一种阵列基板及其制作方法。
【背景技术】
目前的COA(color filter on array)产品在撞击时容易产生气泡，其原因主要有两个，一个是局部位置CF(彩膜基板)过孔与TFT(薄膜晶体管)过孔重叠，重叠位置PV(钝化层)被干蚀刻掉，导致色阻层中气体在成盒后从重叠位置析出形成空气气泡，改善对策是扩大色阻层过孔大小，使其不与钝化层过孔重叠，这样会降低穿透率。第二个是在震动过程中PV会裂开导致色阻层中气体析出，形成气泡。目前有一个对策是在色阻层上开一个小孔，这样可以提前释放气体，但是色阻层的蚀刻率比PV的时刻率低，这样容易因蚀刻深度不够导致气体无法提前析出。
最初开发的COA产品钝化层过孔与CF过孔，是在CF色阻层过孔内开一个钝化层过孔，COA制程流程是将色阻层做在阵列基板上，色阻层整体厚度较厚一般都是2.5～3um，而PV干蚀刻的栅极层、栅极绝缘层和源漏基层加起来的厚度一共只有0.7um左右，如果色阻层不开孔会导致整体蚀刻时间会太长，且色阻层都是物理性蚀刻，蚀刻出的过孔会是基本垂直的，不利于ITO电极层覆盖，有断裂风险，所以目前都是采用色阻层开孔方式，然后钝化层过孔套在色阻层内。如出现色阻层过孔与钝化层过孔有交叠，交叠部分会形成一个色阻层内气体流出的通道，由于这种交叠是局部位置，气体析出应是持续进行，所以在面板成盒后还有气体析出，即会形成空气气泡。为改善此问题，一个做法是色阻层过孔做的比较大，这样即不会出现色阻层过孔与钝化层过孔交叠问题，但是这个改善对策会降低开口率。还有一种做法，是在色阻层上开孔，让气体提前析出，但因色阻层蚀刻率与PV蚀刻率相差较大，导致蚀刻深度不足，导致无法到达气体释放位置。
【发明内容】
本发明的目的在于提供一种阵列基板及显示装置，以实现在成盒制程前，将色阻层内的气体被全部排出的目的。
本发明的技术方案如下：
一种阵列基板，其包括：
衬底基板；
栅极层，设于所述衬底基板上；
栅极绝缘层，设于所述衬底基板上，并覆盖所述栅极层；
源漏极层，设于所述栅极绝缘层上；
第一钝化层，其覆盖部分所述源漏基层及所述栅极绝缘层；
色阻层，设于所述第一钝化层上；
第二钝化层，设于所述色阻层上；
其中，所述源漏极层对应上方设有钝化层过孔，所述钝化层过孔贯穿所述第二钝化层、所述色阻层与所述第一钝化层并延伸至所述源漏极层的表面，所述钝化层过孔的一侧裸露出所述色阻层以供色阻层内的气体逸出。
优选地，其中，所述钝化层过孔的第一侧面与所述第二钝化层和所述第一钝化层相通，所述钝化层过孔的第二侧面与所述第二钝化层、所述色阻层和所述第一钝化层相通，所述色阻层内的气体从所述第二侧面上的所述色阻层的表面析出。
优选地，所述阵列基板还包括ITO电极层，所述ITO电极层覆盖部分所述第二钝化层、所述第一侧面及部分所述钝化层过孔的底部。
优选地，与所述钝化层过孔的底部对应接触的所述源漏极层的表面为一凹面，所述凹面的底部为所述钝化层过孔的底部。
优选地，所述色阻层底部设有多个出气孔，所述多个出气孔互相连通，并与所述第二侧面上的所述色阻层的表面互相连通。
优选地，所述色阻层与所述第二钝化层的接触面设有气体通道，所述气体通道与所述第二侧面上的所述色阻层的表面互相连通。
优选地，所述第一侧面上的所述第二钝化层与所述第一钝化层的表面均为斜面。
优选地，所述第二侧面上部的截面呈直角形状，且该直角的水平边位于所述色阻层，其通过湿蚀刻形成。
一种如上述任一项所述的阵列基板的制作方法，其包括以下步骤：
在衬底基板上从下到上依次形成所述栅极层、所述栅极绝缘层、所述源漏极层、所述第一钝化层及所述色阻层；在所述色阻层上形成色阻过孔，所述色阻过孔贯穿所述色阻层和所述第一钝化层以延伸至所述源漏极层；在所述色阻层及所述色阻过孔上形成所述第二钝化层，且所述第二钝化层覆盖所述色阻层及所述色阻过孔；在所述第二钝化层上形成光阻层，并通过曝光显影去除与所述色阻过孔的底面及其一侧面相对的所述光阻层，以使对应位置的所述第二钝化层裸露；对裸露部分的所述第二钝化层进行蚀刻，使与其对应的所述源漏极层和所述色阻层裸露，以形成所述钝化层过孔。
优选地，形成所述钝化层过孔后，还包括：在所述钝化层过孔的底面及覆盖有所述第二钝化层的一侧面上形成ITO电极层。
本发明的有益效果：
本发明的一种阵列基板及其制作方法，通过在源漏极层对应上方设置钝化层过孔，该钝化层过孔贯穿第二钝化层、色阻层与第一钝化层，该钝化层过孔的底部与源漏极层的表面接触，钝化层过孔的第一侧面与第二钝化层和第一钝化层相通，钝化层过孔的第二侧面与第二钝化层、色阻层和第一钝化层相通，形成了有效气体析出路径，将色阻层内的气体提前从第二侧面上的色阻层的表面析出，降低了液晶面板发生气泡的风险。
【附图说明】
图1为本发明实施例的一种阵列基板的整体结构的剖面示意图；
图2为发明实施例的一种阵列基板的除去ITO电极层的整体结构的剖面示意图；
图3为发明实施例的一种阵列基板的制作方法的实施步骤流程图；
图4为发明实施例的一种阵列基板的制作方法的实施步骤流程图中，去除第二过孔的底面及其一侧面的光阻层，使对应位置的第二钝化层裸露后的示意图。
【具体实施方式】
以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是以相同标号表示。
实施例一
请参考图1，图1为本实施例的一种阵列基板的整体结构的剖面示意图。从图1可以看到，本发明的一种阵列基板，其包括：
衬底基板1，该衬底基板1优选为玻璃基板。
栅极层2，设于所述衬底基板1上。
栅极绝缘层3，设于所述衬底基板1上，并覆盖所述栅极层2。
源漏极层4，设于所述栅极绝缘层3上。
第一钝化层5，其覆盖部分所述源漏基层及所述栅极绝缘层3。
色阻层6，设于所述第一钝化层5上，并覆盖部分所述第一钝化层5。
第二钝化层7，设于所述色阻层6上，覆盖部分所述色阻层6及所述第一钝化层5。
其中，所述源漏极层4对应上方设有钝化层过孔9，所述钝化层过孔9贯穿所述第二钝化层7、所述色阻层6与所述第一钝化层5并延伸至所述源漏极层4的表面，所述钝化层过孔9的一侧裸露出所述色阻层6以供色阻层6内的气体逸出。
其中，所述钝化层过孔9的第一侧面(即图1中钝化层过孔9的左边侧面)与所述第二钝化层7和所述第一钝化层5相通，所述钝化层过孔9的第二侧面(即图1中钝化层过孔9的右边侧面)与所述第二钝化层7、所述色阻层6和所述第一钝化层5相通，所述色阻层6内的气体从所述第二侧面上的所述色阻层6的表面析出。
在本实施例中，所述阵列基板还包括ITO电极层8，所述ITO电极层8覆盖部分所述第二钝化层7、所述第一侧面及部分所述钝化层过孔9的底部。
在本实施例中，与所述钝化层过孔9的底部对应接触的所述源漏极层4的表面为一凹面，所述凹面的底部为所述钝化层过孔9的底部。设置该凹面是为了保证将所述第一钝化层5完全蚀刻掉，保证ITO电极层8能和源漏极层4充分接触。
在本实施例中，所述色阻层6底部设有多个出气孔(图中未示出)，所述多个出气孔互相连通，并与所述第二侧面上的所述色阻层6的表面互相连通。另外，所述色阻层6与所述第二钝化层7的接触面设有气体通道(图中未示出)，所述气体通道与所述第二侧面上的所述色阻层6的表面互相连通。以上所述的出气孔和气体通道均为涂布色阻层6时，由于物理化学作用自然形成。这样就使得第一侧面对应的色阻层6内的气体也能够通过第二侧面上的色阻层6的表面析出。
在本实施例中，所述第一侧面上的所述第二钝化层7与所述第一钝化层5的表面均为斜面。这样，覆盖在所述第一侧面上的ITO电极层8就不容易发生断裂。
在本实施例中，所述第二侧面上部的截面呈直角形状，且该直角的水平边位于所述色阻层6，其通过湿蚀刻形成。
在本实施例中，第一侧面因要通过ITO电极层8桥接漏极与像素电极，所以此部分设计色阻层6与钝化层过孔9不相通。第二侧面为释放色阻层6中气体位置，设计上要求色阻层6与钝化层过孔9相通。因为第二侧面设计色阻层6和钝化层过孔9相通，所以释放路径多，在成盒制程前，色阻层6内的气体即会被全部排出。另外，第一侧面形成的第一钝化层5和第二钝化层7的坡度较为平坦，沉积在上面的ITO电极层8就不会断裂，第二侧面的色阻层6的斜坡区域没有第二钝化层7覆盖，使得色阻层6裸露出来，这样色阻层6内部的气体可以快速析出，进而改善气泡问题。
本发明的一种阵列基板，通过在源漏极层4对应上方设置钝化层过孔9，该钝化层过孔9贯穿第二钝化层7、色阻层6与第一钝化层5，该钝化层过孔9的底部与源漏极层4的表面接触，钝化层过孔9的第一侧面与第二钝化层7和第一钝化层5相通，钝化层过孔9的第二侧面与第二钝化层7、色阻层6和第一钝化层5相通，形成了有效气体析出路径，将色阻层6内的气体提前从第二侧面上的色阻层6的表面析出，降低了液晶面板发生气泡的风险。
实施例二
请参考图3，图3为发明实施例的一种阵列基板的制作方法的实施步骤流程图。
本实施提供一种实施例一所述的阵列基板的制作方法，该制作方法包括以下步骤：
步骤S101：在衬底基板1上从下到上依次形成所述栅极层2、所述栅极绝缘层3、所述源漏极层4、所述第一钝化层5及所述色阻层6。
步骤S102：在所述色阻层6上形成色阻过孔，所述色阻过孔与所述源漏极层4上方对应的所述第一钝化层5相通，即色阻过孔贯穿色阻层6和第一钝化层5以延伸至源漏极层4。
步骤S103：在所述色阻层6及所述色阻过孔上形成所述第二钝化层7，且所述第二钝化层7覆盖所述色阻层6及所述色阻过孔。
步骤S104：在所述第二钝化层7上形成光阻层10，并通过曝光显影去除所述色阻过孔的底面及其一侧面上的所述光阻层10，以使对应位置的所述第二钝化层7裸露，其中裸露部分的所述第二钝化层7竖直下方对应有所述色阻层6。此步骤如图4所示。
步骤S105：对裸露部分的所述第二钝化层7进行蚀刻，使与其对应的所述源漏极层4与所述色阻层裸露，以形成所述钝化层过孔9。
在本实施例中，在形成所述钝化层过孔9后，还包括：在所述钝化层过孔9的底面及覆盖有所述第二钝化层7的一侧面上形成ITO电极层8。
在本实施例中，优选采用电浆轰击的方式进行蚀刻。
本发明的一种阵列基板的制作方法，通过在源漏极层4对应上方设置钝化层过孔9，该钝化层过孔9贯穿第二钝化层7、色阻层6与第一钝化层5，该钝化层过孔9的底部与源漏极层4的表面接触，钝化层过孔9的第一侧面与第二钝化层7和第一钝化层5相通，钝化层过孔9的第二侧面与第二钝化层7、色阻层6和第一钝化层5相通，形成了有效气体析出路径，将色阻层6内的气体提前从第二侧面上的色阻层6的表面析出，降低了液晶面板发生气泡的风险。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (10)

1.一种阵列基板，其特征在于，其包括：
衬底基板；
栅极层，设于所述衬底基板上；
栅极绝缘层，设于所述衬底基板上，并覆盖所述栅极层；
源漏极层，设于所述栅极绝缘层上；
第一钝化层，其覆盖部分所述源漏极层及所述栅极绝缘层；
色阻层，设于所述第一钝化层上；
第二钝化层，设于所述色阻层上；
其中，所述源漏极层对应上方设有钝化层过孔，所述钝化层过孔贯穿所述第二钝化层、所述色阻层与所述第一钝化层并延伸至所述源漏极层的表面，所述钝化层过孔的一侧裸露出所述色阻层以供色阻层内的气体逸出。
2.根据权利要求1所述的阵列基板，其特征在于，其中，所述钝化层过孔的第一侧面与所述第二钝化层和所述第一钝化层相通，所述钝化层过孔的第二侧面与所述第二钝化层、所述色阻层和所述第一钝化层相通，所述色阻层内的气体从所述第二侧面上的所述色阻层的表面析出。
3.根据权利要求2所述的阵列基板，其特征在于，所述阵列基板还包括ITO电极层，所述ITO电极层覆盖部分所述第二钝化层、所述第一侧面及部分所述钝化层过孔的底部。
4.根据权利要求1所述的阵列基板，其特征在于，与所述钝化层过孔的底部对应接触的所述源漏极层的表面为一凹面，所述凹面的底部为所述钝化层过孔的底部。
5.根据权利要求2所述的阵列基板，其特征在于，所述色阻层底部设有多个出气孔，所述多个出气孔互相连通，并与所述第二侧面上的所述色阻层的表面互相连通。
6.根据权利要求2所述的阵列基板，其特征在于，所述色阻层与所述第二钝化层的接触面设有气体通道，所述气体通道与所述第二侧面上的所述色阻层的表面互相连通。
7.根据权利要求2所述的阵列基板，其特征在于，所述第一侧面上的所述第二钝化层与所述第一钝化层的表面均为斜面。
8.根据权利要求2所述的阵列基板，其特征在于，所述第二侧面上部的截面呈直角形状，且该直角的水平边位于所述色阻层，其通过湿蚀刻形成。
9.一种如权利要求1至8任一项所述的阵列基板的制作方法，其特征在于，其包括以下步骤：
在衬底基板上从下到上依次形成所述栅极层、所述栅极绝缘层、所述源漏极层、所述第一钝化层及所述色阻层；
在所述色阻层上形成色阻过孔，所述色阻过孔贯穿所述色阻层和所述第一钝化层以延伸至所述源漏极层；
在所述色阻层及所述色阻过孔上形成所述第二钝化层，且所述第二钝化层覆盖所述色阻层及所述色阻过孔；
在所述第二钝化层上形成光阻层，并通过曝光显影去除与所述色阻过孔的底面及其一侧面相对的所述光阻层，以使对应位置的所述第二钝化层裸露；
对裸露部分的所述第二钝化层进行蚀刻，使与其对应的所述源漏极层和所述色阻层裸露，以形成所述钝化层过孔。
10.根据权利要求9所述的制作方法，其特征在于，形成所述钝化层过孔后，还包括：
在所述钝化层过孔的底面及覆盖有所述第二钝化层的一侧面上形成ITO电极层。
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