WO2018006479A1 - 阵列基板及其制作方法、以及液晶显示面板 - Google Patents

阵列基板及其制作方法、以及液晶显示面板 Download PDF

Info

Publication number
WO2018006479A1
WO2018006479A1 PCT/CN2016/095966 CN2016095966W WO2018006479A1 WO 2018006479 A1 WO2018006479 A1 WO 2018006479A1 CN 2016095966 W CN2016095966 W CN 2016095966W WO 2018006479 A1 WO2018006479 A1 WO 2018006479A1
Authority
WO
WIPO (PCT)
Prior art keywords
dielectric layer
disposed
electrode
layer
touch signal
Prior art date
Application number
PCT/CN2016/095966
Other languages
English (en)
French (fr)
Inventor
彭香艺
陈归
李亚锋
Original Assignee
武汉华星光电技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 武汉华星光电技术有限公司 filed Critical 武汉华星光电技术有限公司
Priority to US15/127,389 priority Critical patent/US20180188581A1/en
Publication of WO2018006479A1 publication Critical patent/WO2018006479A1/zh

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/13338—Input devices, e.g. touch panels
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133345—Insulating layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13394—Gaskets; Spacers; Sealing of cells spacers regularly patterned on the cell subtrate, e.g. walls, pillars
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412—Digitisers structurally integrated in a display
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13396—Spacers having different sizes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134372—Electrodes characterised by their geometrical arrangement for fringe field switching [FFS] where the common electrode is not patterned
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/13606—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit having means for reducing parasitic capacitance
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136231—Active matrix addressed cells for reducing the number of lithographic steps
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/136295—Materials; Compositions; Manufacture processes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G02F1/13685—Top gates

Definitions

  • the present invention relates to the field of liquid crystal display technology, and in particular, to an array substrate, a method for fabricating the same, and a liquid crystal display panel.
  • Touch has become the most mainstream function of mobile phones since its inception. It can be said that if a mobile phone does not have touch function, it cannot be called a mobile phone.
  • Touch technology is classified as a single glass process (One Glass Solution, ogs), embeds the touch panel function between the color filter substrate and the polarizer (on cell) and embeds the touch panel function into the liquid crystal pixel (in Cell), etc., now developed in cell
  • the Touch technology divides the common electrode (Com) of the AA area into a cell block as a touch electrode, and each touch electrode has a pin (Pin) that receives a (Rx) signal line and is connected to an output end of the chip (IC).
  • the Com electrode com is divided into a cell block as a touch electrode and a metal layer M3 as an Rx signal line.
  • two insulating layers are required between the pixel electrode pixel and the Com electrode com, that is, An insulating layer PV1 between the Com electrode com and the metal layer M3, and an insulating layer PV2 between the metal layer M3 and the pixel electrode pixel.
  • Embodiments of the present invention provide an array substrate, a method for fabricating the same, and a liquid crystal display panel, which can increase a storage capacitor, so that the pixel can be fully charged at a high resolution, and the coupling between the touch electrode and the Rx signal line is reduced. capacitance.
  • the invention provides an array substrate, comprising: a transparent substrate; a gate line, the gate line is disposed on the transparent substrate; the touch signal line, the touch signal line and the gate line are disposed on the transparent substrate; the dielectric layer, The dielectric layer covers the gate line and the touch signal line and is provided with a first through hole.
  • the touch electrode is disposed on the dielectric layer and electrically connected to the touch signal line via the first through hole.
  • the touch electrode is one or a combination of a common electrode and a pixel electrode.
  • the dielectric layer is respectively provided with a first through hole on both sides of the same gate line, so that the common electrode bridges the touch signal lines on both sides of the gate line through the first through hole.
  • the array substrate further includes a connection electrode disposed in the same layer as the pixel electrode, and the dielectric layer is further provided with a second via hole on both sides of the same gate line, so that the connection electrode bridges the two sides of the gate line through the second via hole. Touch signal line.
  • the layer where the pixel electrode is located is between the layer where the gate line and the touch signal line are located and the layer where the common electrode is located.
  • the array substrate further includes a semiconductor pattern layer, a first dielectric layer, a second dielectric layer, a drain, a source, a third dielectric layer, and a fourth dielectric layer, wherein the first dielectric layer covers the semiconductor pattern layer, the gate lines and The touch signal line is disposed on the first dielectric layer, the second dielectric layer further covers the gate line and the touch signal line, and the drain and the source are disposed on the second dielectric layer and respectively disposed on the first dielectric layer and
  • the third via hole on the two dielectric layers is electrically connected to both ends of the semiconductor pattern layer, the third dielectric layer covers the source and the drain, and the pixel electrode is disposed on the third dielectric layer and passes through the third dielectric layer
  • the four via holes are electrically connected to one of the source and the drain, the fourth dielectric layer covers the pixel electrode, and the common electrode is disposed on the fourth dielectric layer.
  • the present invention also provides a method for fabricating an array substrate, comprising: providing a gate line and a touch signal line on a transparent substrate, wherein the touch signal line and the gate line are disposed on the transparent substrate; and the cover gate line is disposed And a dielectric layer of the touch signal line, and a first through hole is disposed on the dielectric layer; a touch electrode is disposed on the dielectric layer, and the touch electrode is electrically connected to the touch signal line through the first through hole.
  • the touch electrode is one or a combination of a common electrode and a pixel electrode.
  • the touch electrode is disposed on the dielectric layer
  • the step of electrically connecting the touch electrode to the touch signal line via the first through hole comprises: setting the connection electrode and the pixel electrode in the same layer; and on both sides of the same gate line on the dielectric layer
  • the second through holes are respectively disposed, so that the connection electrodes bridge the touch signal lines on both sides of the gate lines via the second through holes.
  • the present invention also provides a liquid crystal display panel, comprising a color film substrate, an array substrate, and a liquid crystal layer disposed between the color film substrate and the array substrate, the array substrate comprising: a transparent substrate; a gate line, the gate line being disposed on the transparent substrate
  • the touch signal line, the touch signal line and the gate line are disposed on the transparent substrate in the same layer; the dielectric layer covers the gate line and the touch signal line and is provided with the first through hole; the touch electrode touches
  • the control electrode is disposed on the dielectric layer and electrically connected to the touch signal line via the first through hole.
  • the touch electrode is one or a combination of a common electrode and a pixel electrode.
  • the dielectric layer is respectively provided with a first through hole on both sides of the same gate line, so that the common electrode bridges the touch signal lines on both sides of the gate line through the first through hole.
  • the array substrate further includes a connection electrode disposed in the same layer as the pixel electrode, and the dielectric layer is further provided with a second via hole on both sides of the same gate line, so that the connection electrode bridges the two sides of the gate line through the second via hole. Touch signal line.
  • the layer where the pixel electrode is located is between the layer where the gate line and the touch signal line are located and the layer where the common electrode is located.
  • the array substrate further includes a semiconductor pattern layer, a first dielectric layer, a second dielectric layer, a drain, a source, a third dielectric layer, and a fourth dielectric layer, wherein the first dielectric layer covers the semiconductor pattern layer, the gate lines and The touch signal line is disposed on the first dielectric layer, the second dielectric layer further covers the gate line and the touch signal line, and the drain and the source are disposed on the second dielectric layer and respectively disposed on the first dielectric layer and
  • the third via hole on the two dielectric layers is electrically connected to both ends of the semiconductor pattern layer, the third dielectric layer covers the source and the drain, and the pixel electrode is disposed on the third dielectric layer and passes through the third dielectric layer
  • the four via holes are electrically connected to one of the source and the drain, the fourth dielectric layer covers the pixel electrode, and the common electrode is disposed on the fourth dielectric layer.
  • the present invention has the beneficial effects that the touch signal line and the gate line are disposed on the transparent substrate in the same layer; the dielectric layer covers the gate line and the touch signal line and is provided with the first through hole; The touch electrode is disposed on the dielectric layer and electrically connected to the touch signal line through the first through hole, so that the storage capacitor can be increased, so that the pixel can be fully charged at a high resolution, and the touch electrode and the Rx signal line are reduced. Coupling capacitor.
  • FIG. 1 is a schematic structural view of a liquid crystal display device of the prior art
  • FIG. 2 is a schematic structural view of a liquid crystal display panel according to a first embodiment of the present invention
  • FIG. 3 is a schematic structural view of an array substrate according to a first embodiment of the present invention.
  • FIG. 4 is a schematic structural view of a liquid crystal display panel according to a second embodiment of the present invention.
  • FIG. 5 is a schematic structural view of an array substrate according to a second embodiment of the present invention.
  • FIG. 6 is a schematic flow chart of a method of fabricating an array substrate according to an embodiment of the invention.
  • the liquid crystal display panel 10 includes an array substrate 11 , a color filter substrate 12 , and a liquid crystal layer 13 disposed between the color filter substrate 12 and the array substrate 11 .
  • the color filter substrate 12 includes a glass substrate 120, a black matrix 121 disposed on the glass substrate 120, and a filter film including a red filter film 123, a green filter film 124, and a blue filter film 125.
  • the color filter substrate 12 is also provided with a column spacer, including a main column spacer (Main Post Spacer, Main PS) 126 and auxiliary column spacers (Sub Post Spacer, Sub PS) 127.
  • the columnar spacer prevents light leakage and can also support the liquid crystal layer 13.
  • the array substrate 11 includes a transparent substrate 1100 , a gate line 1101 disposed on the transparent substrate 1100 , and a touch signal line 1102 and a cover gate disposed on the transparent substrate 1100 in the same layer as the gate line 1101 .
  • the touch electrode 1104 is a common electrode.
  • the array substrate 11 further includes a semiconductor pattern layer 1104, a first dielectric layer 1105, a second dielectric layer 1106, a drain 1107, a source 1108, a third dielectric layer 1109, and a fourth dielectric layer 1110.
  • the first dielectric layer 1105 covers the semiconductor pattern layer 1104, the gate line 1101 and the touch signal line 1102 are disposed on the first dielectric layer 1105, and the second dielectric layer 1106 further covers the gate line 1101 and the touch signal line 1102.
  • the pole 1107 and the source 1108 are disposed on the second dielectric layer 1106 and electrically connected to the two ends of the semiconductor pattern layer 1104 via the third via holes 1111 disposed on the first dielectric layer 1105 and the second dielectric layer 1106, respectively.
  • the dielectric layer 1109 covers the source 1108 and the drain 1107.
  • the pixel electrode 1112 is disposed on the third dielectric layer 1109 and passes through the fourth via 1113 disposed on the third dielectric layer 1109 and one of the source 1108 and the drain 1107. Electrically connected, the fourth dielectric layer 1110 covers the pixel electrode 1112, and the common electrode 1114 is disposed on the fourth dielectric layer 1110.
  • a light shielding metal layer 1115 and a fifth dielectric layer 1116 are further disposed between the transparent substrate 1100 and the semiconductor pattern layer 1104.
  • the gate line 1101 and the touch signal line 1102 are both fabricated by a first metal (M1) process.
  • the source 1108 and the drain 1107 are fabricated by a second metal (M2) process.
  • the touch signal line 1102 is an Rx signal line. Since the touch electrode 1104 is a common electrode, the corresponding dielectric layer includes a second dielectric layer 1106, a third dielectric layer 1109, and a fourth dielectric layer 1110. The thickness of the dielectric layer between the touch electrode and the Rx signal line is increased, thereby reducing the coupling capacitance between the touch electrode and the Rx signal line.
  • the first through holes 1103 are respectively disposed on the two sides of the same gate line 1101 , and the common electrodes 1114 are bridged to the touch signal lines 1102 on both sides of the gate lines 1101 via the first through holes 1103 . Therefore, it is not necessary to separately fabricate the third metal (M3) to serve as the touch signal line, thereby saving a reticle, and thus only one dielectric layer, that is, the fourth dielectric layer 1110, is required between the pixel electrode 1112 and the common electrode 1114.
  • the storage capacitor can be increased so that the pixel can be fully charged at a high resolution while reducing the coupling capacitance between the touch electrode and the Rx signal line.
  • the liquid crystal display panel 20 includes an array substrate 21, a color filter substrate 22, and a liquid crystal layer 23 disposed between the color filter substrate 22 and the array substrate 21.
  • the structure of the color filter substrate 22 is the same as that of FIG. 2 and will not be described herein.
  • the structure of the array substrate 21 is as shown in FIG. 4 and FIG. 5 .
  • the array substrate 21 includes a transparent substrate 2100 , a gate line 2101 disposed on the transparent substrate 2100 , and a touch signal disposed on the transparent substrate 2100 in the same layer as the gate line 2101 .
  • the touch electrode 2104 is a pixel electrode.
  • the dielectric layer includes: a second dielectric layer 2106 and a third dielectric layer 2109, which increases the thickness of the dielectric layer between the touch electrode and the Rx signal line, thereby reducing the coupling capacitance between the touch electrode and the Rx signal line. .
  • the pixel electrode 2112 is located between the layer where the gate line 2101 and the touch signal line 2102 are located and the layer where the common electrode 2114 is located, and passes through the fourth via 2113 and the source 2108 disposed on the third dielectric layer 2109. One of the drains 2107 is electrically connected.
  • the array substrate 21 further includes a connection electrode 2104 disposed in the same layer as the pixel electrode 2112.
  • the dielectric layer is further provided with a second via hole 2103 on both sides of the same gate line 2101, so that the connection electrode 2104 is bridged through the second via hole 2103.
  • the touch signal line 2102 on both sides of the gate line 2101.
  • the third metal (M3) it is not necessary to separately fabricate the third metal (M3) to serve as the touch signal line, thereby saving a reticle, and thus only one dielectric layer, that is, the fourth dielectric layer 2110 is required between the pixel electrode 2112 and the common electrode 2114, and further
  • the storage capacitor can be increased so that the pixel can be fully charged at a high resolution while reducing the coupling capacitance between the touch electrode and the Rx signal line.
  • the touch electrode may be one or a combination of a common electrode and a pixel electrode. That is, the touch electrode may be a common electrode (see FIGS. 2 and 3), or a pixel electrode (see FIGS. 4 and 5), or a part of the touch electrode is a common electrode, and a part is a pixel electrode.
  • FIG. 6 is a schematic flow chart of a method of fabricating an array substrate according to an embodiment of the invention. See Figure 2 or Figure 4 for the structure of the array substrate. As shown in FIG. 6, the manufacturing method of the array substrate includes:
  • Step S10 The gate line and the touch signal line are disposed on the transparent substrate, wherein the touch signal line and the gate line are disposed on the transparent substrate in the same layer.
  • the gate line and the touch signal line are both fabricated by the first metal (M1) process.
  • the gate line serves as the gate of the thin film transistor, and the touch signal line serves as the Rx signal line of the touch electrode.
  • a light shielding metal layer is further provided on the transparent substrate.
  • a fifth dielectric layer is disposed on the light shielding metal layer, and the semiconductor pattern layer is disposed on the fifth dielectric layer.
  • a first dielectric layer is disposed on the semiconductor pattern layer, and the gate lines and the touch signal lines are disposed on the first dielectric layer.
  • the gate line is disposed directly above the light shielding metal layer, and no light shielding metal layer is disposed directly under the touch signal line.
  • Step S11 A dielectric layer covering the gate line and the touch signal line is disposed, and a first via hole is disposed on the dielectric layer.
  • a second dielectric layer is disposed on the gate line and the touch signal line, and a drain and a source are disposed on the second dielectric layer, and are respectively disposed on the first dielectric layer and the second dielectric layer.
  • the third via is electrically connected to both ends of the semiconductor pattern layer.
  • a third dielectric layer is provided to cover the source and drain.
  • Step S12 The touch electrode is disposed on the dielectric layer, and the touch electrode is electrically connected to the touch signal line via the first through hole.
  • the touch electrode is one or a combination of a common electrode and a pixel electrode.
  • the dielectric layer includes a second dielectric layer and a third dielectric layer.
  • a pixel electrode that is, a touch electrode, is disposed on the third dielectric layer.
  • the pixel electrode is electrically connected to one of the source and the drain through a fourth via disposed on the third dielectric layer, and the touch electrode is electrically connected to the touch signal line via the first via.
  • the first via hole thus passes through the second dielectric layer and the third dielectric layer.
  • a fourth dielectric layer is disposed on the pixel electrode, and a common electrode is disposed on the fourth dielectric layer to complete fabrication of the array substrate.
  • the dielectric layer between the touch electrode and the touch signal line is at least the second dielectric layer and the third dielectric layer, regardless of whether the touch electrode is a common electrode or a pixel electrode, or a combination of the two.
  • the dielectric layer between the common electrode and the pixel electrode is a fourth dielectric layer.
  • the embodiment of the present invention increases the thickness of the dielectric layer between the touch electrode and the Rx signal line, thereby reducing the coupling capacitance between the touch electrode and the Rx signal line. Since the Rx signal line is directly implemented through the touch signal line disposed in the same layer as the gate line, there is no need to separately fabricate the third metal (M3) to serve as the touch signal line, thereby saving a mask. And a dielectric layer is reduced between the pixel electrode and the common electrode, thereby increasing the storage capacitance so that the pixel can be fully charged at high resolution.
  • M3 third metal
  • the dielectric layer includes a second dielectric layer, a third dielectric layer, and a fourth dielectric layer, which further increases the thickness of the dielectric layer between the touch electrode and the Rx signal line, thereby reducing the touch electrode and Coupling capacitance between Rx signal lines.
  • the pixel electrode is further disposed on the third dielectric layer, and is electrically connected to one of the source and the drain through the fourth via provided on the third dielectric layer.
  • a fourth dielectric layer is further disposed to cover the pixel electrode.
  • the touch electrode and the common electrode are disposed on the fourth dielectric layer. The touch electrode is electrically connected to the touch signal line via the first through hole. The first via hole thus passes through the second dielectric layer, the third dielectric layer, and the fourth dielectric layer.
  • the connection electrode and the pixel electrode may be disposed in the same layer; the second via hole is respectively disposed on both sides of the same gate line on the dielectric layer, thereby further connecting the electrode through the first electrode
  • the two through holes bridge the touch signal lines on both sides of the gate line.
  • the second via hole passes through the second dielectric layer and the third dielectric layer.
  • the present invention is disposed on the transparent substrate by the same layer of the touch signal line and the gate line; the dielectric layer covers the gate line and the touch signal line and is provided with the first through hole; the touch electrode is disposed on the medium
  • the layer is electrically connected to the touch signal line through the first through hole, so that the storage capacitor can be increased, so that the pixel can be fully charged at a high resolution, and the coupling capacitance between the touch electrode and the Rx signal line is reduced.

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Human Computer Interaction (AREA)
  • Geometry (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Position Input By Displaying (AREA)

Abstract

一种阵列基板及其制作方法、以及液晶显示面板。阵列基板(11)包括：透明基板(1100)；栅极线(1101)，栅极线(1101)设置于透明基板(1100)上；触控信号线(1102)，触控信号线(1102)与栅极线(1101)同层设置于透明基板(1100)上；介质层，介质层覆盖栅极线(1101)和触控信号线(1102)且设置有第一通孔(1103)；触控电极(1104)，触控电极(1104)设置于介质层且经第一通孔(1103)与触控信号线(1102)电连接。通过以上方式，能够增加存储电容，使得在高分辨率下像素能充足电，同时降低了触控电极与触控信号线之间的耦合电容。

Description

阵列基板及其制作方法、以及液晶显示面板
【技术领域】
本发明涉及液晶显示技术领域，特别是涉及一种阵列基板及其制作方法、以及液晶显示面板。
【背景技术】
触控（Touch）自问世以来已经成为当前手机最主流的功能，可以毫不客气的说，如果一个手机不具备touch功能，就不能称之为手机。Touch技术的分类有单片玻璃制程（One Glass Solution，ogs），将触摸面板功能嵌入到彩色滤光片基板和偏光板之间（on cell）及将触控面板功能嵌入到液晶像素中（in cell）等，现在开发的In cell Touch技术是将AA区的公共电极（Com）分成小区块作为触控电极，每个触控电极都有接收（Rx）信号线连接到芯片（IC）输出端的引脚（Pin）。这就需要有一层金属充当Rx信号线的功能，将IC输出的信号传输到每个触控电极。而且传统的低温多晶硅技术 (Low Temperature Poly-silicon，LTPS)+ 触控面板（touch panel ，TP）的液晶显示面板的In Cell像素薄膜晶体管(Thin Film Transistor，TFT)处截面图结构参见图1，Com电极com分成小区块作为触控电极，金属层M3作为Rx信号线，如此，像素电极pixel和Com电极com之间需要存在两层绝缘层，即位于Com电极com和金属层M3之间的绝缘层PV1，以及位于金属层M3和像素电极pixel之间的绝缘层PV2。
【发明内容】
本发明实施例提供了一种阵列基板及其制作方法、以及液晶显示面板，能够增加存储电容，使得在高分辨率下像素能充足电，同时降低了触控电极与Rx信号线之间的耦合电容。
本发明提供一种阵列基板，包括：透明基板；栅极线，栅极线设置于透明基板上；触控信号线，触控信号线与栅极线同层设置于透明基板上；介质层，介质层覆盖栅极线和触控信号线且设置有第一通孔；触控电极，触控电极设置于介质层且经第一通孔与触控信号线电连接。
其中，触控电极为公共电极和像素电极中的一者或组合。
其中，介质层在同一栅极线的两侧分别设置有第一通孔，进而使得公共电极经第一通孔桥接栅极线两侧的触控信号线。
其中，阵列基板进一步包括与像素电极同层设置的连接电极，介质层在同一栅极线的两侧进一步分别设置有第二通孔，进而使得连接电极经第二通孔桥接栅极线两侧的触控信号线。
其中，像素电极的所在层介于栅极线和触控信号线的所在层与公共电极的所在层之间。
其中，阵列基板进一步包括半导体图案层、第一介质层、第二介质层、漏极、源极、第三介质层和第四介质层，其中第一介质层覆盖半导体图案层，栅极线和触控信号线设置于第一介质层上，第二介质层进一步覆盖栅极线和触控信号线，漏极和源极设置于第二介质层上且分别经设置于第一介质层和第二介质层上的第三通孔与半导体图案层的两端电连接，第三介质层覆盖源极和漏极，像素电极设置于第三介质层上且通过设置于第三介质层上的第四通孔与源极和漏极中的一个电连接，第四介质层覆盖像素电极，公共电极设置于第四介质层上。
本发明还提供一种阵列基板的制作方法，包括：在透明基板上设置栅极线和触控信号线，其中触控信号线与栅极线同层设置于透明基板上；设置覆盖栅极线和触控信号线的介质层，且在介质层上设置有第一通孔；在介质层上设置触控电极，触控电极经第一通孔与触控信号线电连接。
其中，触控电极为公共电极和像素电极中的一者或组合。
其中，在介质层上设置触控电极，触控电极经第一通孔与触控信号线电连接的步骤包括：设置连接电极与像素电极同层；在介质层上同一栅极线的两侧分别设置第二通孔，进而使得连接电极经第二通孔桥接栅极线两侧的触控信号线。
本发明还提供一种液晶显示面板，包括彩膜基板、阵列基板以及设置于彩膜基板与阵列基板之间的液晶层，阵列基板包括：透明基板；栅极线，栅极线设置于透明基板上；触控信号线，触控信号线与栅极线同层设置于透明基板上；介质层，介质层覆盖栅极线和触控信号线且设置有第一通孔；触控电极，触控电极设置于介质层且经第一通孔与触控信号线电连接。
其中，触控电极为公共电极和像素电极中的一者或组合。
其中，介质层在同一栅极线的两侧分别设置有第一通孔，进而使得公共电极经第一通孔桥接栅极线两侧的触控信号线。
其中，阵列基板进一步包括与像素电极同层设置的连接电极，介质层在同一栅极线的两侧进一步分别设置有第二通孔，进而使得连接电极经第二通孔桥接栅极线两侧的触控信号线。
其中，像素电极的所在层介于栅极线和触控信号线的所在层与公共电极的所在层之间。
其中，阵列基板进一步包括半导体图案层、第一介质层、第二介质层、漏极、源极、第三介质层和第四介质层，其中第一介质层覆盖半导体图案层，栅极线和触控信号线设置于第一介质层上，第二介质层进一步覆盖栅极线和触控信号线，漏极和源极设置于第二介质层上且分别经设置于第一介质层和第二介质层上的第三通孔与半导体图案层的两端电连接，第三介质层覆盖源极和漏极，像素电极设置于第三介质层上且通过设置于第三介质层上的第四通孔与源极和漏极中的一个电连接，第四介质层覆盖像素电极，公共电极设置于第四介质层上。
通过上述方案，本发明的有益效果是：本发明通过将触控信号线与栅极线同层设置于透明基板上；介质层覆盖栅极线和触控信号线且设置有第一通孔；触控电极设置于介质层且经第一通孔与触控信号线电连接，能够增加存储电容，使得在高分辨率下像素能充足电，同时降低了触控电极与Rx信号线之间的耦合电容。
【附图说明】
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。其中：
图1是现有技术的液晶显示装置的结构示意图；
图2是本发明第一实施例的液晶显示面板的结构示意图；
图3是本发明第一实施例的阵列基板的结构示意图；
图4是本发明第二实施例的液晶显示面板的结构示意图；
图5是本发明第二实施例的阵列基板的结构示意图；
图6是本发明实施例的阵列基板的制作方法的流程示意图。
【具体实施方式】
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性的劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
图2是本发明第一实施例的液晶显示面板的结构示意图。如图2所示，液晶显示面板10包括阵列基板11、彩膜基板12以及设置于彩膜基板12与阵列基板11之间的液晶层13。彩膜基板12包括玻璃基板120、设置在玻璃基板120上的黑色矩阵121以及滤光膜，滤光膜包括红色滤光膜123、绿色滤光膜124以及蓝色滤光膜125。彩膜基板12还设置有柱状隔垫物，包括主要柱状隔垫物（Main Post Spacer，Main PS）126和辅助柱状隔垫物（Sub Post Spacer，Sub PS）127。柱状隔垫物防止漏光，并且还可以对液晶层13起支撑作用。
参见图2和图3，阵列基板11包括：透明基板1100、设置于透明基板1100上的栅极线1101、与栅极线1101同层设置于透明基板1100上的触控信号线1102、覆盖栅极线1101和触控信号线1102的介质层，且介质层上设置有第一通孔1103，以及设置于介质层上且经第一通孔1103与触控信号线1102电连接的触控电极1104。其中，触控电极1104为公共电极。
阵列基板11进一步包括半导体图案层1104、第一介质层1105、第二介质层1106、漏极1107、源极1108、第三介质层1109和第四介质层1110。其中第一介质层1105覆盖半导体图案层1104，栅极线1101和触控信号线1102设置于第一介质层1105上，第二介质层1106进一步覆盖栅极线1101和触控信号线1102，漏极1107和源极1108设置于第二介质层1106上且分别经设置于第一介质层1105和第二介质层1106上的第三通孔1111与半导体图案层1104的两端电连接，第三介质层1109覆盖源极1108和漏极1107，像素电极1112设置于第三介质层1109上且通过设置于第三介质层1109上的第四通孔1113与源极1108和漏极1107中的一个电连接，第四介质层1110覆盖像素电极1112，公共电极1114设置于第四介质层1110上。在透明基板1100与半导体图案层1104之间还设置有遮光金属层1115和第五介质层1116。
在本发明实施例中，栅极线1101和触控信号线1102都是由第一金属（M1）制程制作而成。源极1108和漏极1107是由第二金属（M2）制程制作而成。触控信号线1102即为Rx信号线，由于触控电极1104为公共电极，对应地介质层包括第二介质层1106、第三介质层1109以及第四介质层1110 ，增加了触控电极与Rx信号线之间的介质层厚度，进而降低了触控电极与Rx信号线之间的耦合电容。介质层在同一栅极线1101的两侧分别设置有第一通孔1103，进而使得公共电极1114经第一通孔1103桥接栅极线1101两侧的触控信号线1102。如此就不需要另外制作第三金属（M3）来充当触控信号线，节省了一道光罩，并且如此像素电极1112和公共电极1114之间只需要一个介质层，即第四介质层1110，进而能够增加存储电容，使得在高分辨率下像素能充足电，同时降低了触控电极与Rx信号线之间的耦合电容。
图4是本发明第二实施例的液晶显示面板的结构示意图。液晶显示面板20包括阵列基板21、彩膜基板22以及设置于彩膜基板22与阵列基板21之间的液晶层23。彩膜基板22的结构与图2相同，在此不再赘述。
阵列基板21的结构参见图4和图5，阵列基板21包括：透明基板2100、设置于透明基板2100上的栅极线2101、与栅极线2101同层设置于透明基板2100上的触控信号线2102、覆盖栅极线2101和触控信号线2102的介质层，且介质层上设置有第一通孔2103，以及设置于介质层上且经第一通孔2103与触控信号线2102电连接的触控电极2104。
阵列基板21与阵列基板11的区别在于：触控电极2104为像素电极。对应地，介质层包括：第二介质层2106和第三介质层2109，增加了触控电极与Rx信号线之间的介质层厚度，进而降低了触控电极与Rx信号线之间的耦合电容。
像素电极2112的所在层介于栅极线2101和触控信号线2102的所在层与公共电极2114的所在层之间，通过设置于第三介质层2109上的第四通孔2113与源极2108和漏极2107中的一个电连接。阵列基板21进一步包括与像素电极2112同层设置的连接电极2104，介质层在同一栅极线2101的两侧进一步分别设置有第二通孔2103，进而使得连接电极2104经第二通孔2103桥接栅极线2101两侧的触控信号线2102。如此就不需要另外制作第三金属（M3）来充当触控信号线，节省了一道光罩，并且如此像素电极2112和公共电极2114之间只需要一个介质层，即第四介质层2110，进而能够增加存储电容，使得在高分辨率下像素能充足电，同时降低了触控电极与Rx信号线之间的耦合电容。
在本发明实施例中，触控电极可以为公共电极和像素电极中的一者或组合。即触控电极可以为公共电极（参见图2和图3），或者为像素电极（参见图4和图5），或者触控电极一部分为公共电极，一部分为像素电极。
图6是本发明实施例的阵列基板的制作方法的流程示意图。阵列基板的结构参见图2或图4。如图6所示，阵列基板的制作方法包括：
步骤S10：在透明基板上设置栅极线和触控信号线，其中触控信号线与栅极线同层设置于透明基板上。
在本发明实施例中，栅极线和触控信号线都是由第一金属（M1）制程同时制作而成。栅极线用作薄膜晶体管的栅极，而触控信号线作为触控电极的Rx信号线。在步骤S10中，在透明基板上还设置有遮光金属层。在遮光金属层设置第五介质层，半导体图案层设置在第五介质层上。在半导体图案层上设置第一介质层，栅极线和触控信号线设置在第一介质层上。栅极线设置在遮光金属层的正上方，而触控信号线的正下方没有设置遮光金属层。
步骤S11：设置覆盖栅极线和触控信号线的介质层，且在介质层上设置有第一通孔。
在步骤S11中，在栅极线和触控信号线上设置第二介质层，在第二介质层上设置漏极和源极，且分别经设置于第一介质层和第二介质层上的第三通孔与半导体图案层的两端电连接。设置第三介质层覆盖源极和漏极。
步骤S12：在介质层上设置触控电极，触控电极经第一通孔与触控信号线电连接。
触控电极为公共电极和像素电极中的一者或组合。触控电极为像素电极时，介质层包括第二介质层和第三介质层。此时，在步骤S12中，在第三介质层上设置像素电极，亦即触控电极。像素电极通过设置于第三介质层上的第四通孔与源极和漏极中的一个电连接，触控电极经第一通孔与触控信号线电连接。因此第一通孔穿过第二介质层和第三介质层。然后设置第四介质层于像素电极上，并在第四介质层上设置公共电极，完成阵列基板的制作。
在本发明实施例中，不管触控电极为公共电极或像素电极，或两者的组合，触控电极与触控信号线之间的介质层至少为第二介质层和第三介质层，而公共电极与像素电极之间的介质层为第四介质层。也就是说，本发明实施例增加了触控电极与Rx信号线之间的介质层厚度，进而降低了触控电极与Rx信号线之间的耦合电容。由于Rx信号线直接通过与栅极线同层设置的触控信号线实现，如此就不需要另外制作第三金属（M3）来充当触控信号线，节省了一道光罩。并且在像素电极和公共电极之间减少了一个介质层，进而能够增加存储电容，使得在高分辨率下像素能充足电。
触控电极为公共电极时，介质层包括第二介质层、第三介质层以及第四介质层，进一步增加了触控电极与Rx信号线之间的介质层厚度，进而降低了触控电极与Rx信号线之间的耦合电容。此时，在步骤S11中，还在第三介质层上设置像素电极，且通过设置于第三介质层上的第四通孔与源极和漏极中的一个电连接。再设置第四介质层覆盖像素电极。在步骤S12中，触控电极和公共电极设置于第四介质层上。触控电极经第一通孔与触控信号线电连接。因此第一通孔穿过第二介质层、第三介质层以及第四介质层。
在触控电极为公共电极时，在设置像素电极时，还可以设置连接电极与像素电极同层；在介质层上同一栅极线的两侧分别设置第二通孔，进而使得连接电极经第二通孔桥接栅极线两侧的触控信号线。此时第二通孔穿过第二介质层和第三介质层。
综上所述，本发明通过将触控信号线与栅极线同层设置于透明基板上；介质层覆盖栅极线和触控信号线且设置有第一通孔；触控电极设置于介质层且经第一通孔与触控信号线电连接，能够增加存储电容，使得在高分辨率下像素能充足电，同时降低了触控电极与Rx信号线之间的耦合电容。
以上所述仅为本发明的实施例，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (15)

  1. 一种阵列基板，其中，所述阵列基板包括：
    透明基板；
    栅极线，所述栅极线设置于所述透明基板上；
    触控信号线，所述触控信号线与所述栅极线同层设置于所述透明基板上；
    介质层，所述介质层覆盖所述栅极线和所述触控信号线且设置有第一通孔；
    触控电极，所述触控电极设置于所述介质层且经所述第一通孔与所述触控信号线电连接。
  2. 根据权利要求1所述的阵列基板，其中，所述触控电极为公共电极和像素电极中的一者或组合。
  3. 根据权利要求2所述的阵列基板，其中，所述介质层在同一所述栅极线的两侧分别设置有所述第一通孔，进而使得所述公共电极经所述第一通孔桥接所述栅极线两侧的所述触控信号线。
  4. 根据权利要求2所述的阵列基板，其中，所述阵列基板进一步包括与所述像素电极同层设置的连接电极，所述介质层在同一所述栅极线的两侧进一步分别设置有第二通孔，进而使得所述连接电极经所述第二通孔桥接所述栅极线两侧的所述触控信号线。
  5. 根据权利要求2所述的阵列基板，其中，所述像素电极的所在层介于所述栅极线和所述触控信号线的所在层与所述公共电极的所在层之间。
  6. 根据权利要求2所述的阵列基板，其中，所述阵列基板进一步包括半导体图案层、第一介质层、第二介质层、漏极、源极、第三介质层和第四介质层，其中所述第一介质层覆盖所述半导体图案层，所述栅极线和所述触控信号线设置于所述第一介质层上，所述第二介质层进一步覆盖所述栅极线和所述触控信号线，所述漏极和源极设置于所述第二介质层上且分别经设置于所述第一介质层和所述第二介质层上的第三通孔与所述半导体图案层的两端电连接，所述第三介质层覆盖所述源极和漏极，所述像素电极设置于所述第三介质层上且通过设置于所述第三介质层上的第四通孔与所述源极和所述漏极中的一个电连接，所述第四介质层覆盖所述像素电极，所述公共电极设置于所述第四介质层上。
  7. 一种阵列基板的制作方法，其中，所述方法包括：
    在透明基板上设置栅极线和触控信号线，其中所述触控信号线与所述栅极线同层设置于所述透明基板上；
    设置覆盖所述栅极线和所述触控信号线的介质层，且在所述介质层上设置有第一通孔；
    在所述介质层上设置触控电极，所述触控电极经所述第一通孔与所述触控信号线电连接。
  8. 根据权利要求6所述的制作方法，其中，所述触控电极为公共电极和像素电极中的一者或组合。
  9. 根据权利要求8所述的制作方法，其中，所述在所述介质层上设置触控电极，所述触控电极经所述第一通孔与所述触控信号线电连接的步骤包括：
    设置连接电极与所述像素电极同层；
    在所述介质层上同一所述栅极线的两侧分别设置第二通孔，进而使得所述连接电极经所述第二通孔桥接所述栅极线两侧的所述触控信号线。
  10. 一种液晶显示面板，其中，所述液晶显示面板包括彩膜基板、阵列基板以及设置于所述彩膜基板与所述阵列基板之间的液晶层，所述阵列基板包括：
    透明基板；
    栅极线，所述栅极线设置于所述透明基板上；
    触控信号线，所述触控信号线与所述栅极线同层设置于所述透明基板上；
    介质层，所述介质层覆盖所述栅极线和所述触控信号线且设置有第一通孔；
    触控电极，所述触控电极设置于所述介质层且经所述第一通孔与所述触控信号线电连接。
  11. 根据权利要求10所述的液晶显示面板，其中，所述触控电极为公共电极和像素电极中的一者或组合。
  12. 根据权利要求11所述的液晶显示面板，其中，所述介质层在同一所述栅极线的两侧分别设置有所述第一通孔，进而使得所述公共电极经所述第一通孔桥接所述栅极线两侧的所述触控信号线。
  13. 根据权利要求11所述的液晶显示面板，其中，所述阵列基板进一步包括与所述像素电极同层设置的连接电极，所述介质层在同一所述栅极线的两侧进一步分别设置有第二通孔，进而使得所述连接电极经所述第二通孔桥接所述栅极线两侧的所述触控信号线。
  14. 根据权利要求11所述的液晶显示面板，其中，所述像素电极的所在层介于所述栅极线和所述触控信号线的所在层与所述公共电极的所在层之间。
  15. 根据权利要求11所述的液晶显示面板，其中，所述阵列基板进一步包括半导体图案层、第一介质层、第二介质层、漏极、源极、第三介质层和第四介质层，其中所述第一介质层覆盖所述半导体图案层，所述栅极线和所述触控信号线设置于所述第一介质层上，所述第二介质层进一步覆盖所述栅极线和所述触控信号线，所述漏极和源极设置于所述第二介质层上且分别经设置于所述第一介质层和所述第二介质层上的第三通孔与所述半导体图案层的两端电连接，所述第三介质层覆盖所述源极和漏极，所述像素电极设置于所述第三介质层上且通过设置于所述第三介质层上的第四通孔与所述源极和所述漏极中的一个电连接，所述第四介质层覆盖所述像素电极，所述公共电极设置于所述第四介质层上。
PCT/CN2016/095966 2016-07-08 2016-08-19 阵列基板及其制作方法、以及液晶显示面板 WO2018006479A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US15/127,389 US20180188581A1 (en) 2016-07-08 2016-08-19 Array substrates and the manufacturing methods thereof, and liquid crystal panels

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201610537100.7 2016-07-08
CN201610537100.7A CN106200168B (zh) 2016-07-08 2016-07-08 阵列基板及其制作方法、以及液晶显示面板

Publications (1)

Publication Number Publication Date
WO2018006479A1 true WO2018006479A1 (zh) 2018-01-11

Family

ID=57473821

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2016/095966 WO2018006479A1 (zh) 2016-07-08 2016-08-19 阵列基板及其制作方法、以及液晶显示面板

Country Status (3)

Country Link
US (1) US20180188581A1 (zh)
CN (1) CN106200168B (zh)
WO (1) WO2018006479A1 (zh)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102461634B1 (ko) * 2016-05-26 2022-10-31 티씨엘 차이나 스타 옵토일렉트로닉스 테크놀로지 컴퍼니 리미티드 액정 표시 장치 및 그 제조방법
US20200064668A1 (en) * 2016-11-17 2020-02-27 Huawei Technologies Co., Ltd. Array Board and Production Method Thereof, and Liquid Crystal Display Panel
CN106773361A (zh) * 2017-03-08 2017-05-31 深圳市华星光电技术有限公司 一种液晶显示面板及液晶显示器
US10371979B2 (en) * 2017-06-22 2019-08-06 Hannstar Display Corporation Display panel and manufacturing method thereof
CN107505793B (zh) * 2017-09-27 2020-10-16 上海天马微电子有限公司 阵列基板和显示装置
CN109725450B (zh) * 2017-10-30 2022-02-08 瀚宇彩晶股份有限公司 显示面板与其制造方法
CN110471551B (zh) * 2018-05-09 2023-05-12 瀚宇彩晶股份有限公司 触控显示器以及触控显示器的制作方法
CN108732837B (zh) * 2018-05-29 2019-10-18 武汉华星光电技术有限公司 Tft阵列基板及液晶显示面板
JP6690671B2 (ja) 2018-06-20 2020-04-28 セイコーエプソン株式会社 電気光学装置および電子機器
CN109545803B (zh) * 2018-12-29 2020-10-13 武汉华星光电技术有限公司 阵列基板及其制作方法
CN109656073A (zh) * 2019-01-03 2019-04-19 昆山龙腾光电有限公司 阵列基板及其制造方法和显示装置
TWI690838B (zh) * 2019-05-03 2020-04-11 友達光電股份有限公司 畫素陣列基板
CN110600424B (zh) * 2019-08-20 2023-08-01 武汉华星光电技术有限公司 阵列基板的制备方法及阵列基板
CN110600425B (zh) * 2019-08-20 2023-07-04 武汉华星光电技术有限公司 阵列基板的制备方法及阵列基板
CN111443511A (zh) * 2020-04-16 2020-07-24 深圳市华星光电半导体显示技术有限公司 自电容式触控显示面板及其驱动方法
CN111781777B (zh) * 2020-07-23 2022-02-22 武汉华星光电技术有限公司 阵列基板、显示面板及电子设备
CN113867564B (zh) * 2021-09-14 2023-10-13 Tcl华星光电技术有限公司 触控显示面板

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104461161A (zh) * 2014-12-29 2015-03-25 京东方科技集团股份有限公司 触控基板以及触控装置
CN104915062A (zh) * 2015-06-25 2015-09-16 厦门天马微电子有限公司 一种阵列基板及触控显示装置
CN104932163A (zh) * 2015-07-03 2015-09-23 厦门天马微电子有限公司 阵列基板、显示面板和显示装置
US20150364507A1 (en) * 2014-06-13 2015-12-17 Lg Display Co., Ltd. Display device integrated with touch screen panel and method of fabricating the same

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102439350B1 (ko) * 2015-12-31 2022-09-02 엘지디스플레이 주식회사 터치스크린 내장형 표시장치 및 그 제조방법
TWI588710B (zh) * 2016-07-05 2017-06-21 速博思股份有限公司 具有透明網格觸控電極之嵌入式觸控顯示裝置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150364507A1 (en) * 2014-06-13 2015-12-17 Lg Display Co., Ltd. Display device integrated with touch screen panel and method of fabricating the same
CN104461161A (zh) * 2014-12-29 2015-03-25 京东方科技集团股份有限公司 触控基板以及触控装置
CN104915062A (zh) * 2015-06-25 2015-09-16 厦门天马微电子有限公司 一种阵列基板及触控显示装置
CN104932163A (zh) * 2015-07-03 2015-09-23 厦门天马微电子有限公司 阵列基板、显示面板和显示装置

Also Published As

Publication number Publication date
US20180188581A1 (en) 2018-07-05
CN106200168B (zh) 2019-11-26
CN106200168A (zh) 2016-12-07

Similar Documents

Publication Publication Date Title
WO2018006479A1 (zh) 阵列基板及其制作方法、以及液晶显示面板
WO2018133134A1 (zh) Coa基板及液晶显示面板
WO2018032551A1 (zh) 液晶显示面板及液晶显示装置
WO2015000196A1 (zh) 光罩、玻璃基板及其制造方法
WO2019015020A1 (zh) 一种液晶显示面板的制作方法
WO2016201729A1 (zh) 一种阵列基板及其制作方法、液晶显示器
WO2019019316A1 (zh) 一种显示面板、阵列基板及其制造方法
WO2019015077A1 (zh) 一种阵列基板及其制造方法、液晶显示装置
WO2017008316A1 (zh) 一种阵列基板及液晶显示面板
WO2020135023A1 (zh) 显示装置、阵列基板及其工艺方法
WO2016165175A1 (zh) 液晶显示面板及液晶显示装置
WO2018152874A1 (zh) 一种阵列基板及阵列基板的制作方法
WO2019015191A1 (zh) 一种显示面板及其制程
WO2017181463A1 (zh) 阵列基板及其制造方法、液晶显示器
WO2017049663A1 (zh) 一种彩膜阵列基板及其制造方法、显示装置
WO2017128597A1 (zh) 液晶显示面板、tft基板及其制造方法
WO2016074256A1 (zh) 透明显示面板及其彩色滤光片基板
WO2016065666A1 (zh) 一种tft基板及其制造方法
WO2016123819A1 (zh) 触控显示面板的制作方法
WO2016090690A1 (zh) 一种ltps像素单元及其制造方法
WO2018214210A1 (zh) 一种阵列基板及其制作方法
WO2016078112A1 (zh) 薄膜晶体管基板的制作方法及制造设备
WO2017177537A1 (zh) 一种液晶显示面板及液晶显示器
WO2020062518A1 (zh) 彩膜基板和显示面板
WO2015085618A1 (zh) 薄膜晶体管阵列基板、制造方法及液晶显示装置

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 16907983

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 16907983

Country of ref document: EP

Kind code of ref document: A1