WO2017049663A1 - 一种彩膜阵列基板及其制造方法、显示装置 - Google Patents

一种彩膜阵列基板及其制造方法、显示装置 Download PDF

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Publication number
WO2017049663A1
WO2017049663A1 PCT/CN2015/091196 CN2015091196W WO2017049663A1 WO 2017049663 A1 WO2017049663 A1 WO 2017049663A1 CN 2015091196 W CN2015091196 W CN 2015091196W WO 2017049663 A1 WO2017049663 A1 WO 2017049663A1
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WIPO (PCT)
Prior art keywords
pattern
color filter
black matrix
passivation layer
via hole
Prior art date
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PCT/CN2015/091196
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English (en)
French (fr)
Inventor
付如海
林永伦
张君恺
邱杰
叶成亮
Original Assignee
深圳市华星光电技术有限公司
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Application filed by 深圳市华星光电技术有限公司 filed Critical 深圳市华星光电技术有限公司
Priority to US14/787,064 priority Critical patent/US9933652B2/en
Publication of WO2017049663A1 publication Critical patent/WO2017049663A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133345—Insulating layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133512—Light shielding layers, e.g. black matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
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    • G02F1/133516—Methods for their manufacture, e.g. printing, electro-deposition or photolithography
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    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136222—Colour filters incorporated in the active matrix substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/136295—Materials; Compositions; Manufacture processes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/02—Materials and properties organic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a color film array substrate, a manufacturing method thereof, and a display device.
  • the accuracy requirements of the production line for the alignment of the array substrate and the color film substrate of the liquid crystal display are also higher and higher.
  • the traditional pairing process has been unable to meet the high precision requirements, and the color film array substrate technology which improves the alignment accuracy and the aperture ratio by fabricating a color filter film on the array substrate has been gradually developed.
  • the color film array substrate technology directly prepares the color filter film and the black matrix on the array substrate, so that the alignment precision of the pixel electrode is greatly reduced, thereby greatly increasing the aperture ratio of the pixel unit and achieving an increase in light transmission.
  • the purpose of the rate and contrast In the prior art, the color filter film of the color filter array substrate covers the entire pixel unit, that is, the light-transmitting region and the non-light-transmitting region (or the wiring region) of the pixel unit, and corresponds to the thin film transistor, the scan line, the data line, and the like.
  • the position of the black matrix is further laid to prevent light leakage in the non-transmissive region, but the drain of the thin film transistor needs to be electrically connected to the pixel electrodes on the black matrix and the color filter film, usually the black matrix and the color filter film are correspondingly leaked.
  • the position of the pole connection is bored to form a through hole, and the through hole is electrically connected to the pixel electrode, but since the optical density of the black matrix material is small, it is necessary to apply a thick black matrix material to effectively avoid the problem of light leakage, and black
  • the matrix material has a certain fluidity, and sometimes a part of it flows into the through hole or other lower-lying areas, such as from the display area with the color filter film of the color filter array substrate to the color filter film without the color filter film.
  • the technical problem to be solved by the present invention is to provide a color film array substrate, a manufacturing method thereof, and a display device capable of forming a thick black matrix pattern in a non-transparent area of a pixel unit to avoid light leakage.
  • a technical solution adopted by the present invention is to provide a color film array substrate, which includes a substrate, a plurality of arrayed pixel units formed on the substrate, and the pixel unit includes a light region and a non-transmissive region located at a periphery of the light-transmitting region, the pixel unit further comprising a color filter pattern and a black matrix pattern, wherein the color filter pattern covers the light-transmitting region, and the black matrix pattern is not provided with a color filter pattern below Directly cover the non-transparent area.
  • the black matrix pattern is an organic photoresist material.
  • the pixel unit further includes a thin film transistor, a scan line pattern, a data line pattern, a first passivation layer, and a pixel electrode pattern.
  • the gate pattern and the source pattern of the thin film transistor are respectively connected to the scan line pattern and the data line pattern, and the pixel electrode
  • the pattern is located on the upper portion of the first passivation layer, and the first passivation layer is provided with a first via hole, and the drain pattern of the thin film transistor is connected to the pixel electrode pattern through the first via hole, the black matrix pattern and the thin film transistor, the scan line pattern and The data line pattern is correspondingly disposed and directly contacts the first passivation layer.
  • the black matrix pattern is disposed on the first passivation layer.
  • a black matrix pattern is disposed between the first passivation layer and the substrate.
  • the black matrix pattern is also provided with a second via hole at a position of the first via hole, and the drain pattern for the thin film transistor is connected to the pixel electrode pattern through the first via hole and the second via hole.
  • the pixel unit further includes a second passivation layer between the black matrix pattern and the pixel electrode pattern, and a third via hole is disposed on the second passivation layer for passing the drain pattern of the thin film transistor
  • the first through hole, the second through hole, and the third through hole are connected to the pixel electrode pattern.
  • a black matrix pattern is disposed between the first passivation layer and the substrate.
  • a display device including a color film array substrate, the color film array substrate including a substrate, and a plurality of array arrangements formed on the substrate a pixel unit, the pixel unit includes a light transmissive area and a non-transmissive area located at a periphery of the light transmissive area, and the pixel unit further includes a color filter pattern and a black matrix pattern, wherein the color filter pattern covers the light transmissive area, and the black matrix pattern is below The non-transparent area is directly covered without setting the color filter pattern.
  • the black matrix pattern is an organic photoresist material.
  • the pixel unit further includes a thin film transistor, a scan line pattern, a data line pattern, a first passivation layer, and a pixel electrode pattern.
  • the gate pattern and the source pattern of the thin film transistor are respectively connected to the scan line pattern and the data line pattern, and the pixel electrode
  • the pattern is located on the upper portion of the first passivation layer, and the first passivation layer is provided with a first via hole, and the drain pattern of the thin film transistor is connected to the pixel electrode pattern through the first via hole, the black matrix pattern and the thin film transistor, the scan line pattern and The data line pattern is correspondingly disposed and directly contacts the first passivation layer.
  • the black matrix pattern is disposed on the first passivation layer.
  • a black matrix pattern is disposed between the first passivation layer and the substrate.
  • the black matrix pattern is also provided with a second via hole at a position of the first via hole, and the drain pattern for the thin film transistor is connected to the pixel electrode pattern through the first via hole and the second via hole.
  • the pixel unit further includes a second passivation layer between the black matrix pattern and the pixel electrode pattern, and a third via hole is disposed on the second passivation layer for passing the drain pattern of the thin film transistor
  • the first through hole, the second through hole, and the third through hole are connected to the pixel electrode pattern.
  • a black matrix pattern is disposed between the first passivation layer and the substrate.
  • another technical solution adopted by the present invention is to provide a method for manufacturing a color film array substrate, the method comprising the steps of: providing a substrate; sequentially forming a gate pattern and scanning of the thin film transistor on the substrate; a line pattern, a gate insulating layer, a semiconductor layer pattern, a source pattern and a drain pattern of the thin film transistor, and a data line pattern;
  • a black matrix pattern spaced apart from the color filter pattern is formed on the first passivation layer such that the black matrix pattern covers the non-transmissive region of the color filter array substrate.
  • the manufacturing method further comprises: forming a second passivation layer on the color filter pattern and the black matrix pattern;
  • a pixel electrode pattern is formed on the second passivation layer such that the pixel electrode pattern is electrically connected to the drain pattern through the via.
  • the present invention forms a plurality of array-arranged pixel units on a substrate of a color filter array substrate, and each of the pixel units includes a light-transmitting region and a non-transmissive region located at a periphery of the light-transmitting region.
  • the pixel unit further includes a color filter pattern and a black matrix pattern, wherein the color filter pattern covers the light transmissive region, and the black matrix pattern directly covers the non-transparent region without providing a color filter pattern below.
  • the present invention can form a thick black matrix pattern in the non-transparent area of the pixel unit to avoid light leakage problems, thereby improving subsequent display quality.
  • FIG. 1 is a schematic top plan view of an embodiment of a color filter array substrate provided by the present invention.
  • Figure 2 is a schematic cross-sectional view taken along line A-A of Figure 1;
  • Figure 3 is a schematic cross-sectional view taken along line B-B of Figure 1;
  • FIG. 4 is a schematic structural view of an embodiment of a display device according to the present invention.
  • FIG. 5 is a schematic flow chart of an embodiment of a method for manufacturing a color filter array substrate provided by the present invention.
  • FIG. 6 is a schematic diagram of a process corresponding to each step in FIG. 5.
  • FIG. 6 is a schematic diagram of a process corresponding to each step in FIG. 5.
  • FIG. 1 is a schematic top view of an embodiment of a color film array substrate provided by the present invention.
  • Figure 2 is a schematic cross-sectional view taken along line A-A of Figure 1.
  • the color filter array substrate 10 includes a substrate 11 and a plurality of array-arranged pixel units 12 formed on the substrate 11.
  • the pixel unit 12 includes a light-transmitting region I and is located in the light-transmitting region I.
  • the pixel unit 12 further includes a color filter pattern 121 and a black matrix pattern 122, wherein the color filter pattern 121 covers the light-transmitting area I, and the black matrix pattern 122 is not provided with the color filter pattern 121 below. In the case of direct coverage of the non-transparent area II.
  • the light-transmitting region I is a pixel opening region of the pixel unit 12 for displaying a color image
  • the non-light-transmitting region II is a region for providing an electronic component that drives the light-transmitting region I.
  • the area of the color filter array substrate 10 in the dotted line in FIG. 1 is a display area thereof, and a plurality of pixel units 12 arranged in an array are arranged, and a region outside the display area is a non-display area for setting a color film array.
  • an organic photoresist material is used for the black matrix pattern 122 in the color filter array substrate 10.
  • the pixel unit 12 further includes a thin film transistor, a scan line pattern 123 (not shown in FIG. 2), a data line pattern 124 (not shown in FIG. 2), and a first passivation layer. 125 (not shown in FIG. 1) and a pixel electrode pattern 126 (not shown in FIG. 1), the thin film transistor includes a gate pattern 127 sequentially disposed on the substrate 11, a gate insulating layer 128, a semiconductor pattern 129, and a source The pattern 130 and the drain pattern 131. Specifically, the first passivation layer 125 is disposed on the source pattern 130 and the drain pattern 131, and the gate pattern 127 and the source pattern 130 are respectively connected to the scan line pattern 123 and the data line pattern 124.
  • the pixel electrode pattern 126 is located on the upper portion of the first passivation layer 125.
  • the first passivation layer 125 is provided with a first via hole 132.
  • the drain pattern 131 of the thin film transistor is connected to the pixel electrode pattern 126 through the first via hole 132.
  • the black matrix pattern 122 is disposed corresponding to the thin film transistor, the scan line 123, and the data line 124, and directly contacts the first passivation layer 125.
  • the black matrix pattern 122 is disposed corresponding to the thin film transistor, the scan line pattern 123, and the data line pattern 124, that is, the black matrix pattern 122 can be covered with the non-transparent area II, and the thin film transistor, the scan line pattern 123, and the data line pattern 124 are provided. In the non-transmissive region II, the black matrix pattern 122 can cover the region so that it cannot transmit light.
  • the black matrix pattern 122 is illustrated as being disposed on the first passivation layer 125 in FIG. 2, optionally, the black matrix pattern 22 may be disposed between the first passivation layer 125 and the substrate 11.
  • the pixel electrode pattern 126 is located on the black matrix pattern 122.
  • the black matrix pattern 122 is also provided with a second via hole 133 at the position of the first via hole 132 for the drain pattern of the thin film transistor.
  • the 131 is connected to the pixel electrode pattern 126 through the first through hole 131 and the second through hole 132. It can also be understood that the scan line pattern 123 and the data line pattern 124 in FIG.
  • the pixel unit 12 optionally further includes a common electrode pattern 133 that is insulated from the scan line pattern 123 and the data line pattern 124 for forming a storage capacitor in the pixel unit 12 (FIG. 1 and Not shown in Figure 2).
  • the pixel unit 12 further includes a second passivation layer 134.
  • the second passivation layer 134 is located between the black matrix pattern 122 and the pixel electrode pattern 126, and the second passivation layer 134 is provided with a third via hole. 135.
  • the drain pattern 131 for the thin film transistor is connected to the pixel electrode pattern 126 through the first via hole 131, the second via hole 132, and the third via hole 135.
  • the first passivation layer 125, the gate insulating layer 128, and the second passivation layer 134 have a monolithic structure and do not need to be patterned by a photomask process.
  • the black matrix pattern 122 has no black matrix material in the regions of the first through hole 131, the second through hole 132, and the third through hole 135.
  • FIG. 3 is a schematic cross-sectional view along line B-B of FIG.
  • the color filter pattern 121 is on the first passivation layer 125 of the display region I. It can be understood that the gate insulating layer 128 is sequentially below the first passivation layer 125.
  • a pixel electrode pattern 126 is also disposed on the substrate 11 and above the first passivation layer 125. Further, a second passivation layer 134 is further disposed under the pixel electrode pattern 126 and between the color filter pattern and the black matrix pattern 122.
  • the color filter pattern 121 is spaced apart from the black matrix pattern 122 (the color filter pattern 121 and the black matrix pattern 122 are disposed in complementary or approximately complementary shapes).
  • the color filter pattern 121 continuous with the display area I is not disposed, and the black matrix pattern 122 directly covers the entire non-display area II, in the first through hole 131 and the second through hole 132.
  • the third via 135 region (the relevant elements such as the drain pattern 131 under the three via regions are not shown in FIG. 3, as shown in FIG. 2), and the black matrix material may not be disposed at the through hole position. Since the color filter pattern 121 is not disposed in the non-display area II, the black matrix pattern 122 of the area can form a thick black matrix pattern compared with the prior art, which can effectively prevent light leakage in the area without affecting the display area.
  • the light transmission effect in I further reduces the dark state brightness during subsequent display and improves the contrast to improve the display quality.
  • FIG. 4 is a schematic structural diagram of an embodiment of a display device according to the present invention.
  • the display device 40 includes the color filter array substrate 10, the color filter substrate 41, and the liquid crystal layer 42 between the color filter array substrate 10 and the color filter substrate 41. Since the display device 40 includes the color filter array substrate 10 shown in FIG. 1, FIG. 2, and FIG. 3, and the color filter array substrate 10 includes the color filter pattern 121 and the black matrix pattern 122, there is no need to set the color filter substrate 41.
  • the color filter pattern and the black matrix pattern, and the black matrix pattern 122 in the color filter array substrate 10 directly covers the non-display area II of the pixel unit 12 without providing the color filter pattern 121, so that the black matrix pattern of the area Compared with the prior art, the 122 can form a thick black matrix pattern, which can effectively prevent light leakage in the region without affecting the light transmission effect in the display region I.
  • FIG. 5 is a schematic flow chart of an embodiment of a method for manufacturing a color filter array substrate provided by the present invention
  • FIG. 6 is a schematic diagram of a process corresponding to each step in FIG. 5 .
  • the color film array substrate provided by the present invention is manufactured by manufacturing the color filter array substrate 10 shown in FIG. 1, FIG. 2 and FIG. 3, and the same reference numerals are used to mark the same structural elements. As shown in FIG. 5 and FIG. 6, and in combination with FIG. 1, FIG. 2 and FIG. 3, the manufacturing method comprises the following steps:
  • a substrate 11 is provided.
  • the substrate 11 may be a glass substrate or a plastic substrate. Further, while the substrate 11 is provided, the substrate 11 is removed by impurities such as cleaning or sanding, and the substrate 11 is optionally dried by a drying process to provide a clean substrate 11.
  • S2 sequentially forming a gate pattern 127 and a scan line pattern 123 of a thin film transistor on the substrate 11 (not shown in FIG. 6, see FIG. 1), a gate insulating layer 128, a semiconductor pattern 129, and a source pattern of the thin film transistor. 130 and drain pattern 131 and data line pattern 124 (not shown in FIG. 6, see FIG. 1).
  • the gate pattern 127, the source pattern 130 and the drain pattern 131 are metal materials
  • the scan line pattern 123, the data line pattern 124 may be a metal material or a transparent conductive material
  • the gate insulating layer 128 may be silicon oxide or And a silicon nitride material
  • the semiconductor pattern 129 may alternatively be an amorphous silicon material, and in other embodiments may also be a polysilicon material.
  • This step S2 is the same as the prior art, and the continuous full-surface layer material is usually patterned by a photomask process to obtain a desired pattern of each layer or each structural element, which will not be described herein.
  • step S2 may further form the common electrode pattern 133 shown in FIG.
  • the first passivation layer 125 may be formed by deposition or coating, such as deposition of material of the first passivation layer 125 by physical vapor deposition (PVD), chemical vapor deposition (CVD) equipment or a coater. Coating forms a thin layer.
  • the first passivation layer 125 can optionally be a silicon nitride material.
  • the specific implementation manner of the step S4 is: forming a color filter layer on the first passivation layer 125, and patterning the color filter layer by a photomask process to form a color filter pattern 121, in combination with FIG. 1 and As shown in FIG. 3 , the color filter pattern 121 is disposed on the transparent region I of the color filter array substrate 10 . Specifically, the color filter pattern 121 is located above the first passivation layer 125 and spreads over the entire transmission region I.
  • the color filter layer may be a red color resist material, a green color resist material or/and a blue color resist material.
  • step S5 is: forming a black matrix material layer on the first passivation layer 125 and the color filter pattern 121, and patterning the black matrix material layer by a photomask process to form black.
  • the matrix pattern 122 is such that the black matrix pattern 122 covers the non-transmissive region II of the color filter array substrate 10.
  • the black matrix pattern 122 uses an organic photoresist material.
  • the manufacturing method further comprises:
  • the second passivation layer 134 may be formed in the same manner as the first passivation layer 125. Further, the second passivation layer 134 may be a silicon nitride material. The second passivation layer 134 has an effect of enhancing the adhesion of the subsequent pixel electrode patterns 126 such that the pixel electrode patterns 126 can be stably and firmly connected to the drain patterns 131.
  • a via hole is formed at a position of the second passivation layer 134, the black matrix pattern 122, and the corresponding drain pattern 131 of the first passivation layer 125.
  • the step S7 is specifically to form a through hole at a position corresponding to the drain pattern 131 by using a mask process.
  • the through hole is a first through hole 132 in the first passivation layer 125.
  • the second via hole 132 is in the black matrix pattern 122 and the third via hole 135 in the second passivation layer 134.
  • the regions of the first through hole 131, the second through hole 132 and the third through hole 135 are not covered with the black matrix material.
  • the pixel electrode pattern 126 is optionally a transparent conductive material.
  • the pixel electrode pattern 126 is disposed in the transparent region I and the non-transmissive region II, and is connected to the drain pattern 131 in the non-transmissive region II, and covers the entire light transmission in the transparent region I.
  • the region is applied to the liquid crystal layer 43 of FIG. 4 to apply a suitable display gray scale voltage.
  • the present invention forms a plurality of array-arranged pixel units on a substrate of a color film array substrate, and each pixel unit includes a light-transmitting region and a non-transmissive region located at a periphery of the light-transmitting region, and the pixel
  • the unit further includes a color filter pattern and a black matrix pattern, wherein the color filter pattern covers the light transmissive area, and the black matrix pattern directly covers the non-transparent area without providing a color filter pattern below.
  • the present invention can form a thick black matrix pattern in the non-transparent area of the pixel unit, avoiding light leakage in the area, thereby reducing dark state brightness during subsequent display, improving contrast, and improving display quality. .

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Abstract

一种彩膜阵列基板及其制造方法、显示装置。彩膜阵列基板（10）的基板（11）上形成多个阵列式排布的像素单元（12），像素单元（12）包括透光区域（I）及位于透光区域（I）外围的非透光区域（II）。像素单元（12）进一步包括彩色滤光图案（121）和黑矩阵图案（122），彩色滤光图案（121）覆盖透光区域（I），黑矩阵图案（122）在下方不设置彩色滤光图案（121）的情况下直接覆盖非透光区域（II）。从而，在像素单元（12）的非透光区域（II）形成较厚的黑矩阵图案（122），以避免漏光问题。

Description

一种彩膜阵列基板及其制造方法、显示装置
【技术领域】
本发明涉及显示技术领域，尤其涉及一种彩膜阵列基板及其制造方法、显示装置。
【背景技术】
随着人们对液晶显示产品高、精、细品质的要求越来越高，产线对液晶显示屏的阵列基板和彩膜基板的对位压盒精度要求也越来越高。传统的对盒工艺已经无法满足高精度要求，而通过在阵列基板上制作彩色滤光膜来提高对位精度和提升开口率的彩膜阵列基板技术逐渐开展起来。
彩膜阵列基板技术直接在阵列基板上制备彩色滤光膜和黑矩阵，使其与像素电极的对位精度要求大幅度减少，从而使得像素单元的开口率大幅度提高，实现增大光透过率和对比度的目的。现有技术中彩膜阵列基板的彩色滤光膜铺满整个像素单元即铺满像素单元的透光区域和非透光区域（或布线区域），在与薄膜晶体管、扫描线、数据线等对应的位置再铺设黑矩阵以防止非透光区域的漏光，但是薄膜晶体管的漏极需要与黑矩阵和彩色滤光膜上的像素电极实现电连接，通常是将黑矩阵和彩色滤光膜对应漏极连接的位置进行挖孔形成通孔，通过该通孔与像素电极电连接，但是由于黑矩阵材料的光密度较小，需要涂布很厚的黑矩阵材料才能有效避免漏光的问题，而且黑矩阵材料具有一定的流动性，常常会有一部分流入通孔中，或其他地势较低的区域，如从彩膜阵列基板的带有彩色滤光膜的显示区域流到不含有彩色滤光膜的位于彩膜阵列基板边沿的非显示区域，进而使得非透光区域的彩色滤光膜上的黑矩阵变薄，进而引起漏光问题，以最终影响显示品质。
综上，现有技术在像素单元的非透光区域存在黑矩阵变薄而引起漏光的问题，对后续显示品质有不良影响。
【发明内容】
本发明主要解决的技术问题是提供一种彩膜阵列基板及其制造方法、显示装置，能够在像素单元的非透光区域形成较厚的黑矩阵图案，以避免漏光问题。
为解决上述技术问题，本发明采用的一个技术方案是：提供一种彩膜阵列基板，该彩膜阵列基板包括基板、形成在基板上的多个阵列式排布的像素单元，像素单元包括透光区域及位于透光区域外围的非透光区域，像素单元进一步包括彩色滤光图案和黑矩阵图案，其中彩色滤光图案覆盖透光区域，黑矩阵图案在下方不设置彩色滤光图案的情况下直接覆盖非透光区域。
其中，黑矩阵图案是有机光阻材料。
其中，像素单元进一步包括薄膜晶体管、扫描线图案、数据线图案、第一钝化层和像素电极图案，薄膜晶体管的栅极图案和源极图案分别与扫描线图案和数据线图案连接，像素电极图案位于第一钝化层上部，第一钝化层上设有第一通孔，薄膜晶体管的漏极图案通过第一通孔与像素电极图案连接，黑矩阵图案与薄膜晶体管、扫描线图案和数据线图案对应设置，且直接接触第一钝化层。
其中，黑矩阵图案设置在第一钝化层上。
可选的，黑矩阵图案设置在第一钝化层与基板之间。
其中，黑矩阵图案在第一通孔的位置也设有第二通孔，用于薄膜晶体管的漏极图案通过第一通孔、第二通孔与像素电极图案连接。
其中，像素单元进一步包括第二钝化层，第二钝化层位于黑矩阵图案和像素电极图案之间，第二钝化层上设有第三通孔，用于薄膜晶体管的漏极图案通过第一通孔、第二通孔和第三通孔与像素电极图案连接。
可选的，黑矩阵图案设置在第一钝化层与基板之间。
为解决上述技术问题，本发明采用的另一个技术方案是：提供一种显示装置，该显示装置包括彩膜阵列基板，该彩膜阵列基板包括基板、形成在基板上的多个阵列式排布的像素单元，像素单元包括透光区域及位于透光区域外围的非透光区域，像素单元进一步包括彩色滤光图案和黑矩阵图案，其中彩色滤光图案覆盖透光区域，黑矩阵图案在下方不设置彩色滤光图案的情况下直接覆盖非透光区域。
其中，黑矩阵图案是有机光阻材料。
其中，像素单元进一步包括薄膜晶体管、扫描线图案、数据线图案、第一钝化层和像素电极图案，薄膜晶体管的栅极图案和源极图案分别与扫描线图案和数据线图案连接，像素电极图案位于第一钝化层上部，第一钝化层上设有第一通孔，薄膜晶体管的漏极图案通过第一通孔与像素电极图案连接，黑矩阵图案与薄膜晶体管、扫描线图案和数据线图案对应设置，且直接接触第一钝化层。
其中，黑矩阵图案设置在第一钝化层上。
可选的，黑矩阵图案设置在第一钝化层与基板之间。
其中，黑矩阵图案在第一通孔的位置也设有第二通孔，用于薄膜晶体管的漏极图案通过第一通孔、第二通孔与像素电极图案连接。
其中，像素单元进一步包括第二钝化层，第二钝化层位于黑矩阵图案和像素电极图案之间，第二钝化层上设有第三通孔，用于薄膜晶体管的漏极图案通过第一通孔、第二通孔和第三通孔与像素电极图案连接。
可选的，黑矩阵图案设置在第一钝化层与基板之间。
为解决上述技术问题，本发明采用的又一个技术方案是：提供一种彩膜阵列基板的制造方法，该方法包括以下步骤：提供一基板；在基板上依次形成薄膜晶体管的栅极图案和扫描线图案、栅极绝缘层、半导体层图案、薄膜晶体管的源极图案和漏极图案及数据线图案；
在薄膜晶体管的源极图案和漏极图案及数据线图案上形成第一钝化层；
在第一钝化层上形成彩色滤光图案，使得彩色滤光图案覆盖彩膜阵列基板的透光区域；
在第一钝化层上形成与彩色滤光图案间隔设置的黑矩阵图案，使得黑矩阵图案覆盖彩膜阵列基板的非透光区域。
其中，该制造方法进一步包括：在彩色滤光图案和黑矩阵图案上形成第二钝化层；
在第二钝化层、黑矩阵图案和第一钝化层的对应漏极图案的位置形成通孔；
在第二钝化层上形成像素电极图案，使得像素电极图案通过通孔与漏极图案电连接。
本发明的有益效果是：本发明通过在彩膜阵列基板的基板上形成多个阵列式排布的像素单元，且每个像素单元包括透光区域及位于透光区域外围的非透光区域，像素单元进一步包括彩色滤光图案和黑矩阵图案，其中彩色滤光图案覆盖透光区域，黑矩阵图案在下方不设置彩色滤光图案的情况下直接覆盖非透光区域。与现有技术相比，本发明能够在像素单元的非透光区域形成较厚的黑矩阵图案，以避免漏光问题，进而改善后续显示品质。
【附图说明】
图1是本发明提供的一种彩膜阵列基板一实施方式的俯视示意图；
图2是图1中沿A-A的截面示意图；
图3是图1中沿B-B的截面示意图；
图4是本发明提供的一种显示装置一实施方式的结构示意图；
图5是本发明提供的一种彩膜阵列基板的制造方法一实施方式的流程示意图；
图6是图5中每个步骤对应的制程示意图。
【具体实施方式】
请参阅图1和图2，图1是本发明提供的一种彩膜阵列基板一实施方式的俯视示意图。图2是图1中沿A-A的截面示意图。结合图1和图2所示，该彩膜阵列基板10包括基板11，形成在基板11上的多个阵列式排布的像素单元12，像素单元12包括透光区域I及位于透光区域I外围的非透光区域II，像素单元12进一步包括彩色滤光图案121和黑矩阵图案122，其中彩色滤光图案121覆盖透光区域I，黑矩阵图案122在下方不设置彩色滤光图案121的情况下直接覆盖非透光区域II。
其中，透光区域I为像素单元12的像素开口区域，用于显示彩色图像，非透光区域II为设置驱动透光区域I的电子元器件的区域。
其中，图1中彩膜阵列基板10在虚线内的区域为其显示区域，设有多个阵列式排布的像素单元12，在显示区域外围的区域为非显示区域，用于设置彩膜阵列基板10的驱动电路或与外接驱动电路的布线结构。
其中，在彩膜阵列基板10中黑矩阵图案122使用的是有机光阻材料。
请继续参阅图1和图2所示，像素单元12进一步包括薄膜晶体管、扫描线图案123（图2中未示出）、数据线图案124（图2中未示出）、第一钝化层125（图1中未示出）和像素电极图案126（图1中未示出），薄膜晶体管包括依次设置在基板11上的栅极图案127，栅极绝缘层128、半导体图案129，源极图案130和漏极图案131，具体的，第一钝化层125设于源极图案130和漏极图案131上，栅极图案127和源极图案130分别与扫描线图案123和数据线图案124连接，像素电极图案126位于第一钝化层125上部，第一钝化层125上设有第一通孔132，薄膜晶体管的漏极图案131通过第一通孔132与像素电极图案126连接，黑矩阵图案122与薄膜晶体管、扫描线123和数据线124对应设置，且直接接触第一钝化层125。
其中，黑矩阵图案122与薄膜晶体管、扫描线图案123和数据线图案124对应设置是指黑矩阵图案122能够铺满非透光区域II，而薄膜晶体管、扫描线图案123和数据线图案124设于非透光区域II中，黑矩阵图案122能够遮盖该区域使之不能透光。
可以理解的是，虽然图2中示例为黑矩阵图案122设置在第一钝化层125上，可选的，黑矩阵图案22也可设置在第一钝化层125与基板11之间。如图2所示，进一步的，像素电极图案126位于黑矩阵图案122之上，黑矩阵图案122在第一通孔132的位置也设有第二通孔133，用于薄膜晶体管的漏极图案131通过第一通孔131、第二通孔132与像素电极图案126连接。同样可以理解的是，图1中扫描线图案123和数据线图案124可选位于黑矩阵图案122的上方或下方，但其尺寸小于或等于黑矩阵图案122。在其他实施方式中，像素单元12可选还包括公共电极图案133，该公共电极图案133与扫描线图案123和数据线图案124绝缘设置，用于形成像素单元12中的存储电容（图1和图2中未示出）。
请继续参阅图2，像素单元12进一步包括第二钝化层134，第二钝化层134位于黑矩阵图案122和像素电极图案126之间，第二钝化层134上设有第三通孔135，用于薄膜晶体管的漏极图案131通过第一通孔131、所第二通孔132和第三通孔135与像素电极图案126连接。
其中，第一钝化层125、栅极绝缘层128和第二钝化层134为整面结构，不需要通过光罩工序进行图案化。
其中，为了连接像素电极图案126的需要，可选第一通孔131、第二通孔132和第三通孔135区域没有覆盖黑矩阵材料。即黑矩阵图案122在第一通孔131、第二通孔132和第三通孔135区域无黑矩阵材料。
请参阅图3，图3是图1中沿B-B的截面示意图。结合图3和图1、图2所示，彩色滤光图案121在显示区域I的第一钝化层125上，可以理解的是，第一钝化层125的下方依次是栅极绝缘层128和基板11，第一钝化层125的上方也设有像素电极图案126，进一步的，在像素电极图案126下方与彩色滤光图案和黑矩阵图案122之间还设有第二钝化层134，彩色滤光图案121与黑矩阵图案122间隔设置（彩色滤光图案121与黑矩阵图案122以互补或近似互补的形状设置）。在像素单元12的非显示区域II内，不设置与显示区域I内连续的彩色滤光图案121，黑矩阵图案122直接覆盖整个非显示区域II，在第一通孔131、第二通孔132和第三通孔135区域（图3中未示出该三个通孔区域下方的漏极图案131等相关元件，请参阅图2所示）等通孔位置处可选不设置黑矩阵材料，由于在非显示区域II内并未设置彩色滤光图案121，使得该区域的黑矩阵图案122较现有技术能够形成较厚的黑矩阵图案，能够有效防止该区域的漏光，同时不影响显示区域I内的透光效果，进而降低了后续显示时的暗态亮度，提高对比度，以改善显示品质。
请参阅图4，图4是本发明提供的一种显示装置一实施方式的结构示意图。如图4所示，该显示装置40包括上述实施方式中的彩膜阵列基板10、彩膜基板41和位于彩膜阵列基板10与彩膜基板41之间的液晶层42。由于显示装置40包括图1、图2和图3中所示的彩膜阵列基板10，而彩膜阵列基板10包括了彩色滤光图案121和黑矩阵图案122，因此彩膜基板41上无需设置彩色滤光图案和黑矩阵图案，且彩膜阵列基板10中黑矩阵图案122在下方不设置彩色滤光图案121的情况下直接覆盖像素单元12的非显示区域II，使得该区域的黑矩阵图案122较现有技术能够形成较厚的黑矩阵图案，能够有效防止该区域的漏光，同时不影响显示区域I内的透光效果。
请参阅图5和图6，其中图5是本发明提供的一种彩膜阵列基板的制造方法一实施方式的流程示意图；图6是图5中每个步骤对应的制程示意图。其中本发明提供的一种彩膜阵列基板的制造方式是制造上述图1、图2和图3中所示的彩膜阵列基板10，本说明书使用相同的标识来标记同样的结构元件。如图5和图6所示，并结合图1、图2和图3所示，该制造方法包括以下步骤：
S1：提供一基板11。
其中，基板11可选为玻璃基板或塑料基板。进一步的，在提供基板11的同时，将基板11通过清洗或和磨砂等操作去除基板11表面的杂质，可选再通过烘干工序将基板11烘干，以提供一干净的基板11。
S2：在基板11上依次形成薄膜晶体管的栅极图案127和扫描线图案123（图6中未示出，可参阅图1）、栅极绝缘层128、半导体图案129、薄膜晶体管的源极图案130和漏极图案131及数据线图案124（图6中未示出，可参阅图1）。
其中，栅极图案127、源极图案130和漏极图案131是金属材料，扫描线图案123、数据线图案124可选是金属材料或透明导电材料，栅极绝缘层128可选是氧化硅或/和氮化硅材料，半导体图案129可选是非晶硅材料，在其他实施方式中也可选是多晶硅材料。该步骤S2与现有技术相同，通常采用光罩工序对连续的整面层材料进行图案化以获得需要的各层或各结构元件的图案，此处不再赘述。
进一步的，在形成栅极图案127时，步骤S2可选进一步形成图1所示的公共电极图案133。
S3：在薄膜晶体管的源极图案130和漏极图案121及数据线图案124上形成第一钝化层125。
其中，第一钝化层125可选采用沉积或涂布的方式形成，如采用物理气相沉积（PVD）、化学气相沉积（CVD）设备或涂布机将第一钝化层125的材料沉积或涂布形成一薄层。第一钝化层125可选是氮化硅材料。
S4：在第一钝化层125上形成彩色滤光图案121，使得彩色滤光图案121覆盖彩膜阵列基板10的透光区域I。
其中，该步骤S4的具体实现方式是：在第一钝化层125上形成彩色滤光层，通过光罩工序将该彩色滤光层进行图案化以形成彩色滤光图案121，结合图1和图3所示，使得彩色滤光图案121覆盖彩膜阵列基板10的透光区域I，具体是彩色滤光图案121位于第一钝化层125之上且铺满整个透过区域I。
其中彩色滤光层可选是红色色阻材料、绿色色阻材料或/和蓝色色阻材料。
S5：在第一钝化层125上形成与彩色滤光图案121间隔设置的黑矩阵图案122，使得黑矩阵图案122覆盖彩膜阵列基板10的非透光区域II。
可以理解的是，该步骤S5的具体实施方式是：在第一钝化层125和彩色滤光图案121上形成黑矩阵材料层，通过光罩工序将该黑矩阵材料层进行图案化以形成黑矩阵图案122，使得黑矩阵图案122覆盖彩膜阵列基板10的非透光区域II。
其中，黑矩阵图案122使用的是有机光阻材料。
其中，该制造方法进一步包括：
S6：在彩色滤光图案121和黑矩阵图案122上形成第二钝化层134。
其中，第二钝化层134可选与第一钝化层125的形成方式相同，进一步的，第二钝化层134可选是氮化硅材料。其中第二钝化层134具有增强后续像素电极图案126附着力的作用，使得像素电极图案126能够稳定、牢固地与漏极图案131连接。
S7：在第二钝化层134、黑矩阵图案122和第一钝化层125的对应漏极图案131的位置形成通孔。
其中，本步骤S7中具体是采用光罩工序在对应漏极图案131的位置形成通孔，结合图2和图6所示，该通孔在第一钝化层125为第一通孔132，在黑矩阵图案122中为第二通孔132，在第二钝化层134中为第三通孔135。
其中，为了与后续像素电极图案126进行连接，可选第一通孔131、第二通孔132和第三通孔135区域没有覆盖黑矩阵材料。
S8：在第二钝化层134上形成像素电极图案126，使得像素电极图案126通过通孔具体是第一通孔131、第二通孔132和第三通孔135与漏极图案131电连接。
其中，像素电极图案126可选是透明导电材料。
可以理解的是，像素电极图案126设置在在透光区域I和非透光区域II，在非透光区域II中用于与漏极图案131连接，在透光区域I中铺满整个透光区域，以对图4中液晶层43进行施加合适的显示灰阶电压。
区别于现有技术，本发明通过在彩膜阵列基板的基板上形成多个阵列式排布的像素单元，且每个像素单元包括透光区域及位于透光区域外围的非透光区域，像素单元进一步包括彩色滤光图案和黑矩阵图案，其中彩色滤光图案覆盖透光区域，黑矩阵图案在下方不设置彩色滤光图案的情况下直接覆盖非透光区域。与现有技术相比，本发明能够在像素单元的非透光区域形成较厚的黑矩阵图案，避免该区域的漏光，进而降低了后续显示时的暗态亮度，提高对比度，以改善显示品质。
以上所述仅为本发明的实施例，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (16)

  1. 一种彩膜阵列基板，其中，所述彩膜阵列基板包括基板、形成在所述基板上的多个阵列式排布的像素单元，所述像素单元包括透光区域及位于所述透光区域外围的非透光区域，所述像素单元进一步包括彩色滤光图案和黑矩阵图案，其中所述彩色滤光图案覆盖所述透光区域，所述黑矩阵图案在下方不设置所述彩色滤光图案的情况下直接覆盖所述非透光区域。
  2. 根据权利要求1所述的彩膜阵列基板，其中，所述黑矩阵图案是有机光阻材料。
  3. 根据权利要求1所述的彩膜阵列基板，其中，所述像素单元进一步包括薄膜晶体管、扫描线图案、数据线图案、第一钝化层和像素电极图案，所述薄膜晶体管的栅极图案和源极图案分别与所述扫描线图案和所述数据线图案连接，所述像素电极图案位于所述第一钝化层上部，所述第一钝化层上设有第一通孔，所述薄膜晶体管的漏极图案通过所述第一通孔与所述像素电极图案连接，所述黑矩阵图案与所述薄膜晶体管、所述扫描线图案和所述数据线图案对应设置，且直接接触所述第一钝化层。
  4. 根据权利要求3所述的彩膜阵列基板，其中，所述黑矩阵图案设置在所述第一钝化层上。
  5. 根据权利要求4所述的彩膜阵列基板，其中，所述黑矩阵图案在所述第一通孔的位置也设有第二通孔，用于所述薄膜晶体管的漏极图案通过所述第一通孔、所述第二通孔与所述像素电极图案连接。
  6. 根据权利要求5所述的彩膜阵列基板，其中，所述像素单元进一步包括第二钝化层，所述第二钝化层位于所述黑矩阵图案和所述像素电极图案之间，所述第二钝化层上设有第三通孔，用于所述薄膜晶体管的漏极图案通过所述第一通孔、所述第二通孔和所述第三通孔与所述像素电极图案连接。
  7. 根据权利要求3所述的彩膜阵列基板，其中，所述黑矩阵图案设置在所述第一钝化层与所述基板之间。
  8. 一种显示装置，其中，所述显示装置包括彩膜阵列基板，所述彩膜阵列基板包括基板、形成在所述基板上的多个阵列式排布的像素单元，所述像素单元包括透光区域及位于所述透光区域外围的非透光区域，所述像素单元进一步包括彩色滤光图案和黑矩阵图案，其中所述彩色滤光图案覆盖所述透光区域，所述黑矩阵图案在下方不设置所述彩色滤光图案的情况下直接覆盖所述非透光区域。
  9. 根据权利要求8所述的显示装置，其中，所述黑矩阵图案是有机光阻材料。
  10. 根据权利要求8所述的显示装置，其中，所述像素单元进一步包括薄膜晶体管、扫描线图案、数据线图案、第一钝化层和像素电极图案，所述薄膜晶体管的栅极图案和源极图案分别与所述扫描线图案和所述数据线图案连接，所述像素电极图案位于所述第一钝化层上部，所述第一钝化层上设有第一通孔，所述薄膜晶体管的漏极图案通过所述第一通孔与所述像素电极图案连接，所述黑矩阵图案与所述薄膜晶体管、所述扫描线图案和所述数据线图案对应设置，且直接接触所述第一钝化层。
  11. 根据权利要求10所述的显示装置，其中，所述黑矩阵图案设置在所述第一钝化层上。
  12. 根据权利要求11所述的显示装置，其中，所述黑矩阵图案在所述第一通孔的位置也设有第二通孔，用于所述薄膜晶体管的漏极图案通过所述第一通孔、所述第二通孔与所述像素电极图案连接。
  13. 根据权利要求12所述的显示装置，其中，所述像素单元进一步包括第二钝化层，所述第二钝化层位于所述黑矩阵图案和所述像素电极图案之间，所述第二钝化层上设有第三通孔，用于所述薄膜晶体管的漏极图案通过所述第一通孔、所述第二通孔和所述第三通孔与所述像素电极图案连接。
  14. 根据权利要求10所述的显示装置，其中，所述黑矩阵图案设置在所述第一钝化层与所述基板之间。
  15. 一种彩膜阵列基板的制造方法，其中，所述制造方法包括以下步骤：
    提供一基板；
    在所述基板上依次形成薄膜晶体管的栅极图案和扫描线图案、栅极绝缘层、半导体层图案、所述薄膜晶体管的源极图案和漏极图案及数据线图案；
    在所述薄膜晶体管的源极图案和漏极图案及所述数据线图案上形成第一钝化层；
    在所述第一钝化层上形成彩色滤光图案，使得所述彩色滤光图案覆盖所述彩膜阵列基板的透光区域；
    在所述第一钝化层上形成与所述彩色滤光图案间隔设置的黑矩阵图案，使得所述黑矩阵图案覆盖所述彩膜阵列基板的非透光区域。
  16. 据权利要求15所述的制造方法，其中，所述制造方法进一步包括以下步骤：
    在所述彩色滤光图案和所述黑矩阵图案上形成第二钝化层；
    在所述第二钝化层、所述黑矩阵图案和所述第一钝化层的对应所述漏极图案的位置形成通孔；
    在所述第二钝化层上形成像素电极图案，使得所述像素电极图案通过所述通孔与所述漏极图案电连接。
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