WO2014107890A1 - 彩色滤光片基板及其制造方法和液晶面板 - Google Patents

彩色滤光片基板及其制造方法和液晶面板 Download PDF

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WO2014107890A1
WO2014107890A1 PCT/CN2013/070384 CN2013070384W WO2014107890A1 WO 2014107890 A1 WO2014107890 A1 WO 2014107890A1 CN 2013070384 W CN2013070384 W CN 2013070384W WO 2014107890 A1 WO2014107890 A1 WO 2014107890A1
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color resist
resist layer
layer
substrate
stud
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PCT/CN2013/070384
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English (en)
French (fr)
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伍浚铭
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深圳市华星光电技术有限公司
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Priority to US13/811,688 priority Critical patent/US9116297B2/en
Publication of WO2014107890A1 publication Critical patent/WO2014107890A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G02F1/133516—Methods for their manufacture, e.g. printing, electro-deposition or photolithography
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/201—Filters in the form of arrays

Definitions

  • the present invention relates to the field of liquid crystal display technology, and in particular to a color filter substrate, a method of manufacturing the same, and a liquid crystal panel.
  • liquid crystal display devices generally use VA (Vertical Alignment, vertical adjustment) panel with wide viewing angle technology, VA including PVA (Patterned Vertical Alignment, image vertical adjustment technology) and MVA (Multi-domain Vertical Alignment, multi-quadrant vertical alignment technology).
  • VA Vertical Alignment, vertical adjustment
  • VA Powerned Vertical Alignment, image vertical adjustment technology
  • MVA Multi-domain Vertical Alignment, multi-quadrant vertical alignment technology
  • the difference between the two is mainly the use of transparent indium tin oxide (Indium Tin) for PVA technology.
  • the Oxide, ITO) electrode layer replaces the liquid crystal layer protrusion in the MVA technology, and the transparent ITO electrode layer can minimize the waste of the backlight, thereby not only replacing the latter, but also making the liquid crystal panel have a high aperture ratio and a large luminance ratio.
  • Advantages, and the overall quality of LCD panels using PVA technology far exceeds that of LCD panels using MVA technology, so PVA technology has become the mainstream in VA panel technology.
  • BM Black
  • Matrix, Black Matrix) Process R (Red) Process
  • G Green
  • B Blue
  • PS Photo Spacer, interstitial particle process, in which the main function of forming interstitial particles in the PS process is to support the two-layer glass substrate and control the gully during the liquid crystal-to-cassette process. Since the steps of photoresist coating, baking, exposure, development, cleaning and drying are required in the above five yellow light processes, the process of the panel is complicated, takes a long time, and the production cost is high.
  • the present invention provides a color filter substrate, a method of manufacturing the same, and a liquid crystal panel to solve the above problems.
  • the technical problem to be solved by the present invention is to provide a color filter substrate, a manufacturing method thereof and a liquid crystal panel, which can reduce the number of required yellow light processes, simplify the process of the color filter substrate and the liquid crystal panel, and reduce the production cost.
  • a technical solution adopted by the present invention is to provide a method for manufacturing a color filter substrate, comprising: providing a substrate; coating a first photoresist on the substrate; and exposing the first photoresist Developing to form a black matrix layer surrounding a plurality of spaced regions; applying a second photoresist, a third photoresist, and a fourth photoresist sequentially on the substrate, and respectively performing exposure development to form in the spacer region RGB color resist layer, and forming at least one stud on the black matrix layer, wherein the stud is formed by at least one of three exposure development; forming a common electrode layer on the substrate, the common electrode layer covering the RGB color resist layer, and the stud Above the top surface of the common electrode layer.
  • the step of forming a pillar includes: coating a second photoresist on the substrate, and performing exposure development on the second photoresist to form a first red color resist layer in the spacer region of the substrate, and forming at least one on the black matrix layer a second red color resist layer; coating a third photoresist on the substrate, and performing exposure development on the third photoresist to form a first green color resist layer in the spacer region and forming a second color resist layer on the second red resist layer a second green color resist layer; coating a fourth photoresist on the substrate; and exposing and developing the fourth photoresist to form a first blue color resist layer in the spacer region and a second layer on the second green color resist layer a blue color resist layer, wherein the second red color resist layer, the second
  • the common electrode layer is formed on the substrate, the common electrode layer covers the RGB color resist layer, and the step of the protrusion being higher than the top surface of the common electrode layer comprises: coating the common electrode layer on the substrate; patterning the common electrode layer The process is such that the studs are raised above the top surface of the common electrode layer and the top surface of the black matrix layer without the studs is exposed.
  • the longitudinal section of the stud is a stepped shape or a rectangle.
  • the maximum width of the stud is smaller than the width of the black matrix layer at its corresponding position.
  • a color filter substrate including a substrate, a black matrix layer, an RGB color resist layer, a common electrode layer, and at least one pillar, a black matrix layer and RGB color resist layers are formed on the same side surface of the substrate, the studs are disposed on the black matrix layer and the studs are formed by at least one of three exposure developments forming the RGB color resist layer, and the common electrode layer covers the RGB color resist layer, and The stud is raised above the top surface of the common electrode layer.
  • the RGB color resist layer includes a first color resist layer, a second color resist layer and a third color resist layer, and the stud is formed by one of the first color resist layer, the second color resist layer and the third color resist layer or by two And two or more are stacked in sequence.
  • the longitudinal section of the stud is a stepped shape or a rectangle.
  • the maximum width of the stud is smaller than the width of the black matrix layer at its corresponding position.
  • the materials of the first color resist layer, the second color resist layer and the third color resist layer are red pixel resin, green pixel resin and blue pixel resin, respectively, and the material of the common electrode layer is indium tin oxide.
  • a liquid crystal panel including a color filter substrate and an array substrate disposed oppositely, wherein the color filter substrate comprises: a substrate, a black matrix layer, and RGB.
  • a color resist layer, a common electrode layer and at least one stud, a black matrix layer and an RGB color resist layer are formed on the same side surface of the substrate, the stud is disposed on the black matrix layer and the stud is formed by the RGB color resist layer at least once Exposure development is formed, the common electrode layer covers the RGB color resist layer, and the stud is raised above the top surface of the common electrode layer.
  • the pillars are in contact with the array substrate, and the top surface of the common electrode layer is spaced apart from the array substrate.
  • the RGB color resist layer includes a first color resist layer, a second color resist layer and a third color resist layer, and the stud is formed by one of the first color resist layer, the second color resist layer and the third color resist layer or by two And two or more are stacked in sequence.
  • the materials of the first color resist layer, the second color resist layer and the third color resist layer are red pixel resin, green pixel resin and blue pixel resin, respectively, and the material of the common electrode layer is indium tin oxide.
  • the present invention has the beneficial effects that the color filter substrate of the present invention forms an RGB color resist layer in a space region surrounded by a black matrix layer, and at least one stud is formed on the black matrix layer.
  • the stud is formed by at least one of three exposure developments forming an RGB color resist layer, and the stud is raised above the top surface of the common electrode layer.
  • the present invention forms a stud in the three-exposure developing process for forming the RGB color resist layer, and replaces the gap particles by the stud, omits the PS process, thereby reducing the number of required yellow light processes, and simplifying the color filter.
  • the process of the substrate and the liquid crystal panel reduces the production cost.
  • FIG. 1 is a flow chart showing an embodiment of a method of manufacturing a color filter substrate of the present invention
  • FIG. 2 is a schematic structural view of a base of a color filter substrate of the present invention.
  • FIG. 3 is a schematic view showing the formation of a black matrix layer of the color filter substrate of the present invention.
  • FIG. 4 is a schematic view showing the formation of a first red color resist layer and a second red color resist layer of the color filter substrate of the present invention
  • FIG. 5 is a schematic view showing the formation of a first green color resist layer and a second green color resist layer of the color filter substrate of the present invention
  • FIG. 6 is a schematic view showing the formation of a first blue color resist layer and a second blue color resist layer of the color filter substrate of the present invention
  • FIG. 7 is a schematic view showing the formation of a common electrode layer of the color filter substrate of the present invention.
  • FIG. 8 is a schematic structural view of an embodiment of a color filter substrate of the present invention.
  • FIG. 9 is a schematic structural view of a stud in another embodiment of the color filter substrate of the present invention.
  • Figure 10 is a schematic view showing the structure of an embodiment of a liquid crystal panel of the present invention.
  • the present invention provides a color filter substrate, a method of manufacturing the same, and a liquid crystal panel.
  • the method of manufacturing the color filter substrate of the present invention mainly forms a stud in the three-exposure development in which the RGB color resist layer is formed, and replaces the effect of the interstitial particles by the stud, thereby omitting the PS process.
  • Step S10 providing a substrate.
  • Figure 2 is a schematic view showing the structure of the substrate of the present invention.
  • the substrate 210 may be a glass substrate, a plastic substrate or a flexible substrate, and is provided with a plurality of spaced regions D1, D2, D3, ... for selective light transmission.
  • Step S20 coating a first photoresist on the substrate, and performing exposure development on the first photoresist to form a black matrix layer surrounding the plurality of spacer regions.
  • FIG. 3 is a schematic view showing the formation of a black matrix layer in an embodiment of the present invention.
  • a first photoresist 220 having a uniform thickness is coated on the substrate 210, and then the substrate 210 coated with the first photoresist 220 is subjected to vacuum drying, edge photoresist removal, prebaking and cooling, exposure development, and the like. Bake again and eventually form a black matrix layer 230 that is spaced apart.
  • the black matrix layer 230 is disposed around the interval regions D1, D2, D3, .
  • Step S30 sequentially coating the second photoresist, the third photoresist, and the fourth photoresist on the substrate, and respectively performing three exposure developments to form an RGB color resist layer in the spacer region, and on the black matrix layer. At least one stud is formed, wherein the stud is formed by at least one of three exposure developments.
  • a second photoresist 240 is applied on the substrate 210, and then the substrate 210 coated with the second photoresist 240 is vacuum dried, the edge photoresist is removed, and the prebaking is performed. And cooling, exposure development, and re-baking, then forming a first red color resist layer 250a in the spacer region D1, and forming at least one second red color resist layer 250b on the black matrix layer 230.
  • a third photoresist 260 is applied on the substrate 210, and then the substrate 210 coated with the third photoresist 260 is vacuum dried to remove the edge photoresist. Prebaking and cooling, exposure development, and rebaking, then forming a first green color resist layer 260a in the spacer region D2, and forming a second green color resist layer 260b on the second red color resist layer 250b.
  • the fourth photoresist 270 is then coated on the substrate 210, and then the substrate 210 coated with the fourth photoresist 270 is vacuum dried to remove the edge photoresist. Prebaking and cooling, exposure development, and rebaking, then forming a first blue color resist layer 270a in the spacer region D3, and forming a second blue color resist layer 270b on the second green color resist layer 260b.
  • the second red color resist layer 250b, the second green color resist layer 260b, and the second blue color resist layer 270b are sequentially stacked to form the stud 280, and the first red color resist layer 250a and the first green color
  • the resist layer 260a and the first blue color resist layer 270a are respectively located in different adjacent two adjacent spaced regions D1, D2, D3, ... to form an RGB color resist layer L of the color filter substrate.
  • the thickness of the second red color resist layer 250b, the second green color resist layer 260b, and the second blue color resist layer 270b may be set according to the requirements of the liquid crystal panel design. The same as shown in Figure 6, may also be different.
  • the first red color resist layer 250a and the second red color resist layer 250b, the first green color resist layer 260a and the second green color resist layer 260b are formed, first The blue color resist layer 270a and the second green color resist layer 260b have the same thickness.
  • a three-time half exposure technique can also be utilized. Tone) forming a first red color resist layer 250a and a second red color resist layer 250b, a first green color resist layer 260a and a second green color resist layer 260b, and a first blue color resist layer having different thicknesses on the black matrix layer 230. Layer 270a and second blue color resist layer 270b.
  • semi-exposure techniques typically involve semi-exposure using a semi-transmissive reticle, a semi-gray reticle technique.
  • the plate data is designed to form an exposure data map.
  • a mask i.e., a mask Maser
  • the photoresist is exposed in accordance with the exposure data map and using the mask.
  • one development and one etching are performed, followed by mask cleaning and ashing.
  • Step S40 forming a common electrode layer on the substrate, the common electrode layer covering the RGB color resist layer, and the stud is higher than the top surface of the common electrode layer.
  • the common electrode layer 290 is then coated on the substrate 210, and then the common electrode layer 290 is patterned to make the stud 280 rise above the top surface of the common electrode layer 290. 291, and exposing the top surface of the black matrix layer 230 where the studs 280 are not disposed.
  • the material of the common electrode layer is ITO.
  • the present embodiment forms the studs 280 by stacking correspondingly in the three-exposure development forming the RGB color resist layer, and the studs 280 are disposed above the top surface 291 of the common electrode layer 290, so that the studs 280 can be replaced.
  • the function of the gap particles omits the PS process, thereby reducing the number of required yellow light processes, simplifying the process of the color filter substrate and the liquid crystal panel, and reducing the production cost.
  • the order of forming the RGB color resist layer L and the corresponding stack forming the pillars 280 may be changed, that is, when forming the strip RGB color resist layer L, the matrix may be first
  • the second photoresist 240 is coated on the 210 to form the first blue color resist layer 270a and the second blue color resist layer 270b, and then the first red color resist layer 250a and the second red color resist layer 250b are sequentially formed, and finally formed.
  • the first green color resist layer 260a and the second green color resist layer 260b may be changed, that is, when forming the strip RGB color resist layer L, the matrix may be first
  • the second photoresist 240 is coated on the 210 to form the first blue color resist layer 270a and the second blue color resist layer 270b, and then the first red color resist layer 250a and the second red color resist layer 250b are sequentially formed, and finally formed.
  • the first green color resist layer 260a and the second green color resist layer 260b may be changed, that is, when forming
  • the shape of the color resist layer stack is formed on the black matrix layer by the reticle exposure control, and finally The purpose of controlling the height of the stud is achieved by using the number of stacked layers of the color resist layer.
  • Fig. 8 is a schematic view showing the structure of an embodiment of a color filter substrate of the present invention.
  • the color filter substrate 800 of the present embodiment includes a substrate 810, a black matrix layer 820, an RGB color resist layer 830, a common electrode layer 840, and a stud 850.
  • the black matrix layer 820 and the RGB color resist layer 830 are formed on the same side surface of the base 810.
  • the RGB color resist layer 830 includes a first color resist layer 831, a second color resist layer 832, and a third color resist layer 833.
  • the stud 850 includes a first stud 851 and a second stud 852.
  • the studs 850 are disposed on the black matrix layer 820 and the studs 850 are formed by at least one exposure development in a three-exposure development forming the RGB color resist layer 830. That is, the stud 850 is formed of one of the first color resist layer 831, the second color resist layer 832, and the third color resist layer 833 or is formed by sequentially stacking two or more.
  • the longitudinal section of the stud 850 is a forward step type (shown in FIG. 9) or a rectangle, or other shapes satisfying the design requirements.
  • the maximum set width of the stud 850 is smaller than the set width of the black matrix layer 820 at its corresponding position. It should be noted that, in other embodiments of the present invention, the number of the protrusions 850 is not limited to two as shown in FIG. 8, and one or more may be provided as needed.
  • the common electrode layer 840 covers the RGB color resist layer 830, and the stud 850 is higher than the top surface 841 of the common electrode layer 840.
  • the materials of the first color resist layer 831, the second color resist layer 832, and the third color resist layer 833 are red pixel resin, green pixel resin, and blue pixel resin, respectively, and the material of the common electrode layer is oxidized. Indium tin.
  • the manufacturing method of the color filter substrate 800 of this embodiment is the same as that of the above embodiment, and details are not described herein again.
  • FIG. 10 is a schematic view showing the structure of an embodiment of a liquid crystal panel of the present invention.
  • the liquid crystal panel 100 of the present embodiment includes a color filter substrate 110 and an array substrate 120 disposed opposite to each other.
  • the color filter substrate 110 includes a substrate 111, a black matrix layer 112, and an RGB color resist layer. 113.
  • the structure of the color filter substrate 110 is the same as that of the color filter substrate shown in the above embodiment of FIG. 9, and details are not described herein again.
  • the stud 115 is in contact with the array substrate 120, and the top surface 114a of the common electrode layer 114 is spaced apart from the array substrate 120.
  • the color filter substrate of the present invention forms at least one stud on the black matrix layer while forming the RGB color resist layer in the interval region surrounded by the black matrix layer, wherein the stud is formed by RGB color resist At least one of the three exposure developments of the layer is formed and the studs are raised above the top surface of the common electrode layer.
  • the present invention forms a stud in the three-exposure developing process for forming the RGB color resist layer, and replaces the gap particles by the stud, omits the PS process, thereby reducing the number of required yellow light processes, and simplifying the color filter.
  • the process of the substrate and the liquid crystal panel reduces the production cost.

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Abstract

一种彩色滤光片基板及其制造方法和液晶面板，该制造方法包括：在设置有黑矩阵层（230，820，112）的基体（210，810，111）上依序涂布第二光阻（240）、第三光阻（260）和第四光阻（270），并分别对应进行曝光显影，以形成RGB色阻层（L，830，113），以及在黑矩阵层（230，820，112）上形成至少一凸柱（280，850，115），其中，凸柱（280，850，115）由三次曝光显影中至少一次形成；形成公共电极层（290，840，114）并覆盖RGB色阻层（L，830，113），且凸柱（280，850，115）高出公共电极层（290，840，114）的顶面，从而能够减少所需黄光制程的数目，简化彩色滤光片基板和液晶面板的制程，降低生产成本。

Description

彩色滤光片基板及其制造方法和液晶面板
【技术领域】
本发明涉及液晶显示技术领域，具体而言涉及一种彩色滤光片基板及其制造方法和液晶面板。
【背景技术】
当前，液晶显示装置一般采用VA（Vertical Alignment，垂直调整）型广视角技术的面板，VA包括PVA（Patterned Vertical Alignment，图像垂直调整技术）和MVA（Multi-domain Vertical Alignment，多象限垂直配向技术）两种。两者的差异主要是PVA技术使用透明的氧化铟锡（Indium Tin Oxide，ITO）电极层取代MVA技术中的液晶层凸起物，由于透明ITO电极层可以最大限度减少背光源的浪费，从而不仅可以取代后者使液晶面板具有开口率高、亮度比大等的优点，而且采用PVA技术的液晶面板的综合素质也远远超过采用MVA技术的液晶面板，因此PVA技术已成为VA面板技术中的主流。
现有技术中一般需要利用五道黄光制程来完成彩色滤光片基板的制作，即BM（Black Matrix，黑矩阵）制程、R（Red）制程、G（Green）制程、B（Blue）制程和PS（Photo Spacer，间隙粒子）制程，其中，PS制程中形成间隙粒子的主要作用为支撑两层玻璃基板和控制液晶对盒制程时的沟壑。由于在上述五道黄光制程中均需进行光阻涂布、烘烤、曝光、显影以及清洗再烘干等步骤，因此面板的制程复杂、花费时间很长，且生产成本较高。
综上所述，如何减少液晶面板的黄光制程，实为目前企业需要努力的目标。有鉴于此，本发明提供一种彩色滤光片基板及其制造方法和液晶面板，以解决上述问题。
【发明内容】
本发明主要解决的技术问题是提供一种彩色滤光片基板及其制造方法和液晶面板，以减少所需黄光制程的数目，简化彩色滤光片基板和液晶面板的制程，降低生产成本。
为解决上述技术问题，本发明采用的一个技术方案是：提供一种彩色滤光片基板的制造方法，包括：提供基体；在基体上涂布第一光阻，并对第一光阻进行曝光显影，以形成围设多个间隔区域的黑矩阵层；在基体上依序涂布第二光阻、第三光阻和第四光阻，并分别对应进行曝光显影，以在间隔区域中形成RGB色阻层，以及在黑矩阵层上形成至少一凸柱，其中，凸柱由三次曝光显影中至少一次形成；在基体上形成公共电极层，公共电极层覆盖RGB色阻层，且凸柱高出公共电极层的顶面。
其中，在基体上依序涂布第二光阻、第三光阻和第四光阻，并分别对应进行曝光显影，以在间隔区域中形成RGB色阻层，以及在黑矩阵层上形成至少一凸柱的步骤包括：在基体上涂布第二光阻，并对第二光阻进行曝光显影，以在基体的间隔区域形成第一红色色阻层，以及在黑矩阵层上形成至少一第二红色色阻层；在基体上涂布第三光阻，并对第三光阻进行曝光显影，以在间隔区域形成第一绿色色阻层，以及在第二红色色阻层上形成第二绿色色阻层；在基体上涂布第四光阻，并对第四光阻进行曝光显影，以在间隔区域形成第一蓝色色阻层，以及在第二绿色色阻层上形成第二蓝色色阻层，其中依次堆叠的第二红色色阻层、第二绿色色阻层、第二蓝色色阻层形成凸柱，第一红色色阻层、第一绿色色阻层、第一蓝色色阻层分别位于不同的间隔区域内。
其中，在基体上形成公共电极层，公共电极层覆盖RGB色阻层，且凸柱高出公共电极层的顶面设置的步骤包括：在基体上涂布公共电极层；对公共电极层进行图案化制程，以使凸柱高出公共电极层的顶面，以及使黑矩阵层的未设置凸柱的顶面暴露。
其中，凸柱的纵向截面呈正阶梯型或矩形。
其中，凸柱的最大宽度小于其对应位置处的黑矩阵层的宽度。
为解决上述技术问题，本发明采用的另一个技术方案是：提供一种彩色滤光片基板，包括基体、黑矩阵层、RGB色阻层、公共电极层和至少一凸柱，黑矩阵层和RGB色阻层形成于基体的同一侧表面上，凸柱设置于黑矩阵层上且凸柱由形成RGB色阻层的三次曝光显影中的至少一次形成，公共电极层覆盖RGB色阻层，且凸柱高出公共电极层的顶面。
其中， RGB色阻层包括第一色阻层、第二色阻层和第三色阻层，凸柱由第一色阻层、第二色阻层和第三色阻层中的一个形成或由两个及两个以上依次堆叠形成。
其中，凸柱的纵向截面呈正阶梯型或矩形。
其中，凸柱的最大宽度小于其对应位置处的黑矩阵层的宽度。
其中，第一色阻层、第二色阻层和第三色阻层的材料分别为红色像素树脂、绿色像素树脂和蓝色像素树脂，公共电极层的材料为氧化铟锡。
为解决上述技术问题，本发明采用的又一个技术方案是：提供一种液晶面板，包括相对设置的彩色滤光片基板和阵列基板，其中彩色滤光片基板包括：基体、黑矩阵层、RGB色阻层、公共电极层和至少一凸柱，黑矩阵层和RGB色阻层形成于基体的同一侧表面上，凸柱设置于黑矩阵层上且凸柱由形成RGB色阻层的至少一次曝光显影形成，公共电极层覆盖RGB色阻层，且凸柱高出公共电极层的顶面。
其中，凸柱与阵列基板相抵接，公共电极层的顶面与阵列基板间隔设置。
其中， RGB色阻层包括第一色阻层、第二色阻层和第三色阻层，凸柱由第一色阻层、第二色阻层和第三色阻层中的一个形成或由两个及两个以上依次堆叠形成。
其中，第一色阻层、第二色阻层和第三色阻层的材料分别为红色像素树脂、绿色像素树脂和蓝色像素树脂，公共电极层的材料为氧化铟锡。
本发明的有益效果是：区别与现有技术，本发明的彩色滤光片基板在黑矩阵层围设的间隔区域中形成RGB色阻层的同时，在黑矩阵层上形成至少一凸柱，其中，凸柱由形成RGB色阻层的三次曝光显影中的至少一次形成，且凸柱高出公共电极层的顶面。通过上述方式，本发明在形成RGB色阻层的三次曝光显影制程中形成凸柱，并利用凸柱替代间隙粒子的作用，省略PS制程，从而减少所需黄光制程的数目，简化彩色滤光片基板和液晶面板的制程，降低生产成本。
【附图说明】
图1是本发明彩色滤光片基板的制造方法一实施例的流程图；
图2是本发明彩色滤光片基板的基体的结构示意图；
图3是本发明彩色滤光片基板的黑矩阵层的形成示意图；
图4是本发明彩色滤光片基板的第一红色色阻层和第二红色色阻层的形成示意图；
图5是本发明彩色滤光片基板的第一绿色色阻层和第二绿色色阻层的形成示意图；
图6是本发明彩色滤光片基板的第一蓝色色阻层和第二蓝色色阻层的形成示意图；
图7是本发明彩色滤光片基板的公共电极层的形成示意图；
图8是本发明彩色滤光片基板一实施例的结构示意图；
图9是本发明彩色滤光片基板的另一实施例中凸柱的结构示意图；
图10是本发明液晶面板一实施例的结构示意图。
【具体实施方式】
本发明提供一种彩色滤光片基板及其制造方法和液晶面板。具体而言，本发明彩色滤光片基板的制造方法主要通过在形成RGB色阻层的三次曝光显影中形成凸柱，并利用凸柱替代间隙粒子的作用，从而省略PS制程。
下面结合图1~图7和实施例对本发明进行详细说明。
步骤S10：提供基体。
图2是本发明基体的结构示意图。参阅图2，基体210可为玻璃基体、塑料基体或可挠式基体，且设置有用于选择性透光的多个间隔区域D1、D2、D3…。
步骤S20：在基体上涂布第一光阻，并对第一光阻进行曝光显影，以形成围设多个间隔区域的黑矩阵层。
图3是本发明实施例中黑矩阵层的形成示意图。参阅图3，在基体210上涂布厚度均匀的第一光阻220，而后对涂布有第一光阻220的基体210进行真空干燥、去掉边缘光阻、预烘烤与冷却、曝光显影以及再次烘烤，并最终形成间隔设置的黑矩阵层230。其中，黑矩阵层230围绕间隔区域D1、D2、D3…设置。
步骤S30：在基体上依序涂布第二光阻、第三光阻和第四光阻，并分别对应进行三次曝光显影，以在间隔区域中形成RGB色阻层，以及在黑矩阵层上形成至少一凸柱，其中，凸柱由三次曝光显影中至少一次形成。
参阅图4，在黑矩阵层230形成后，接着在基体210上涂布第二光阻240，而后对涂布有第二光阻240的基体210进行真空干燥、去掉边缘光阻、预烘烤与冷却、曝光显影以及再次烘烤，而后在间隔区域D1形成第一红色色阻层250a，以及在黑矩阵层230上形成至少一第二红色色阻层250b。
参阅图5，在第一红色色阻层250a形成后，接着在基体210上涂布第三光阻260，而后对涂布有第三光阻260的基体210进行真空干燥、去掉边缘光阻、预烘烤与冷却、曝光显影以及再次烘烤，而后在间隔区域D2形成第一绿色色阻层260a，以及在第二红色色阻层250b上形成第二绿色色阻层260b。
参阅图6，在第一绿色色阻层260a形成后，接着在基体210上涂布第四光阻270，而后对涂布有第四光阻270的基体210进行真空干燥、去掉边缘光阻、预烘烤与冷却、曝光显影以及再次烘烤，而后在间隔区域D3形成第一蓝色色阻层270a，以及在第二绿色色阻层260b上形成第二蓝色色阻层270b。
在本实施例中，依次堆叠的第二红色色阻层250b、第二绿色色阻层260b、第二蓝色色阻层270b形成凸柱280，并且第一红色色阻层250a、第一绿色色阻层260a、第一蓝色色阻层270a分别位于不同且两两相邻的间隔区域D1、D2、D3…内，形成彩色滤光片基板的RGB色阻层L。
需要说明的是，在本实施例中，第二红色色阻层250b、第二绿色色阻层260b和第二蓝色色阻层270b，三者的厚度可以根据液晶面板设计的需求，设置如图6所示中的相同，也可以不相同。
另外，形成RGB色阻层L的三次曝光显影中，形成的第一红色色阻层250a和第二红色色阻层250b、第一绿色色阻层260a和第二绿色色阻层260b、第一蓝色色阻层270a和第二绿色色阻层260b的厚度相同。
在其他实施例中也可以利用三次半曝光技术（Half Tone）在黑矩阵层230上形成厚薄不一的第一红色色阻层250a和第二红色色阻层250b、第一绿色色阻层260a和第二绿色色阻层260b、第一蓝色色阻层270a和第二蓝色色阻层270b。
一般来说，半曝光技术通常包括：利用半透过的掩模板进行半曝光，即半灰阶光罩技术。在曝光前，将制板数据进行设计形成曝光数据图。然后设置掩模板（即俗称的光罩Mask），按照曝光数据图并利用掩模板对光阻进行曝光。曝光后进行一次显影和一次刻蚀，后续再进行掩模板清洗以及灰化处理。
利用半曝光技术，在一次曝光过程后即可呈现出普通光罩制程需要的曝光部分、半曝光部分以及未曝光部分这三种曝光层次，并且能够形成两种厚度的光阻。
步骤S40：在基体上形成公共电极层，公共电极层覆盖RGB色阻层，且凸柱高出公共电极层的顶面。
参阅图7，在形成RGB色阻层L后，接着在基体210上涂布公共电极层290，而后对公共电极层290进行图案化制程，以使凸柱280高出公共电极层290的顶面291，以及使黑矩阵层230的未设置凸柱280的顶面暴露。在本实施例中，公共电极层的材料为ITO。
综上，本实施例通过在形成RGB色阻层的三次曝光显影中对应的同时堆叠形成凸柱280，且设置凸柱280高出公共电极层290的顶面291，从而能够利用凸柱280替代现有技术中间隙粒子的作用，省略PS制程，进而减少所需黄光制程的数目，简化彩色滤光片基板和液晶面板的制程，降低生产成本。
需要说明的是，在本发明的实施例中，形成RGB色阻层L以及对应堆叠形成凸柱280的顺序可以有所改变，即在形成条状式RGB色阻层L时，可以先在基体210上涂布第二光阻240从而形成第一蓝色色阻层270a和第二蓝色色阻层270b，然后再依序形成第一红色色阻层250a和第二红色色阻层250b，最后形成第一绿色色阻层260a和第二绿色色阻层260b。
此外，应理解，本发明还有其他实施例，例如：
在本发明的另一实施例中，在形成RGB色阻层的三次曝光显影中，选择其中的一次或两次，并利用光罩曝光控制在黑矩阵层上形成色阻层堆叠的形状，最终达到利用色阻层的堆叠层数来控制凸柱的高度的目的。
图8是本发明彩色滤光片基板一实施例的结构示意图。参阅图8，本实施例的彩色滤光片基板800包括：基体810、黑矩阵层820、RGB色阻层830、公共电极层840和凸柱850。
在本实施例中，黑矩阵层820和RGB色阻层830形成于基体810的同一侧表面上。其中，RGB色阻层830包括第一色阻层831、第二色阻层832和第三色阻层833。
凸柱850包括第一凸柱851、第二凸柱852。凸柱850设置于黑矩阵层820上且凸柱850由形成RGB色阻层830的三次曝光显影中的至少一次曝光显影形成。即，凸柱850由第一色阻层831、第二色阻层832和第三色阻层833中的一个形成或者由两个及两个以上依次堆叠形成。
其中，凸柱850的纵向截面呈正阶梯型（见图9所示）或矩形，或其他满足设计要求的形状。同时为防止显示时产生漏光现象，凸柱850的最大设置宽度小于其对应位置处的黑矩阵层820的设置宽度。需要说明的是，在本发明的其他实施例中，凸柱850的设置数量并不限于图8所示的两个，也可以根据需要设置一个或更多个。
公共电极层840覆盖RGB色阻层830上，且凸柱850高出公共电极层840的顶面841。
在本实施例中，第一色阻层831、第二色阻层832和第三色阻层833的材料分别为红色像素树脂、绿色像素树脂和蓝色像素树脂，公共电极层的材料为氧化铟锡。本实施例的彩色滤光片基板800的制造方法与上述实施例相同，此处不再赘述。
图10是本发明液晶面板一实施例的结构示意图。如图10所示，本实施例的液晶面板100包括相对设置的彩色滤光片基板110和阵列基板120，其中，彩色滤光片基板110包括：基体111、黑矩阵层112、RGB色阻层113、公共电极层114和凸柱115。
在本实施例中，彩色滤光片基板110的结构与采上述图9实施例所示的彩色滤光片基板的结构相同，此处不再赘述。
值得注意的是，在本实施例中，凸柱115与阵列基板120相抵接，公共电极层114的顶面114a与阵列基板120间隔设置。
综上所述，本发明彩色滤光片基板在黑矩阵层围设的间隔区域中形成RGB色阻层的同时，在黑矩阵层上形成至少一凸柱，其中，凸柱由形成RGB色阻层的三次曝光显影中的至少一次形成，且凸柱高出公共电极层的顶面。通过上述方式，本发明在形成RGB色阻层的三次曝光显影制程中形成凸柱，并利用凸柱替代间隙粒子的作用，省略PS制程，从而减少所需黄光制程的数目，简化彩色滤光片基板和液晶面板的制程，降低生产成本。
以上所述仅为本发明的实施例，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (14)

  1. 一种彩色滤光片基板的制造方法，其中，所述制造方法包括：
    提供基体；
    在所述基体上涂布第一光阻，并对所述第一光阻进行曝光显影，以形成围设多个间隔区域的黑矩阵层；
    在所述基体上依序涂布第二光阻、第三光阻和第四光阻，并分别对应进行曝光显影，以在所述间隔区域中形成RGB色阻层，以及在所述黑矩阵层上形成至少一凸柱，其中，所述凸柱由三次所述曝光显影中至少一次形成；
    在所述基体上形成公共电极层，所述公共电极层覆盖所述RGB色阻层，且所述凸柱高出所述公共电极层的顶面。
  2. 根据权利要求1所述的制造方法，其中，在所述基体上依序涂布第二光阻、第三光阻和第四光阻，并分别对应进行曝光显影，以在所述间隔区域中形成RGB色阻层，以及在所述黑矩阵层上形成至少一凸柱的步骤包括：
    在所述基体上涂布第二光阻，并对所述第二光阻进行曝光显影，以在所述基体的所述间隔区域形成第一红色色阻层，以及在所述黑矩阵层上形成至少一第二红色色阻层；
    在所述基体上涂布第三光阻，并对所述第三光阻进行曝光显影，以在所述间隔区域形成第一绿色色阻层，以及在所述第二红色色阻层上形成第二绿色色阻层；
    在所述基体上涂布第四光阻，并对所述第四光阻进行曝光显影，以在所述间隔区域形成第一蓝色色阻层，以及在所述第二绿色色阻层上形成第二蓝色色阻层，其中依次堆叠的所述第二红色色阻层、所述第二绿色色阻层、所述第二蓝色色阻层形成所述凸柱，所述第一红色色阻层、所述第一绿色色阻层、所述第一蓝色色阻层分别位于不同的所述间隔区域内。
  3. 根据权利要求1所述的制造方法，其中，在所述基体上形成公共电极层，所述公共电极层覆盖所述RGB色阻层，且所述凸柱高出所述公共电极层的顶面设置的步骤包括：
    在所述基体上涂布公共电极层；
    对所述公共电极层进行图案化制程，以使所述凸柱高出所述公共电极层的顶面，以及使所述黑矩阵层的未设置所述凸柱的顶面暴露。
  4. 根据权利要求1所述的制造方法，其中，所述凸柱的纵向截面呈正阶梯型或矩形。
  5. 根据权利要求4所述的制造方法，其中，所述凸柱的最大宽度小于其对应位置处的所述黑矩阵层的宽度。
  6. 一种彩色滤光片基板，其中，所述彩色滤光片基板包括基体、黑矩阵层、RGB色阻层、公共电极层和至少一凸柱，所述黑矩阵层和所述RGB色阻层形成于所述基体的同一侧表面上，所述凸柱设置于所述黑矩阵层上且所述凸柱由形成所述RGB色阻层的三次曝光显影中的至少一次形成，所述公共电极层覆盖所述RGB色阻层，且所述凸柱高出所述公共电极层的顶面。
  7. 根据权利要求6所述的彩色滤光片基板，其中，所述RGB色阻层包括第一色阻层、第二色阻层和第三色阻层，所述凸柱由所述第一色阻层、所述第二色阻层和所述第三色阻层中的一个形成或由两个及两个以上依次堆叠形成。
  8. 根据权利要求7所述的彩色滤光片基板，其中，所述凸柱的纵向截面呈正阶梯型或矩形。
  9. 根据权利要求8所述的彩色滤光片基板，其中，所述凸柱的最大宽度小于其对应位置处的所述黑矩阵层的宽度。
  10. 根据权利要求6所述的彩色滤光片基板，其中，所述第一色阻层、所述第二色阻层和所述第三色阻层的材料分别为红色像素树脂、绿色像素树脂和蓝色像素树脂，所述公共电极层的材料为氧化铟锡。
  11. 一种液晶面板，包括相对设置的彩色滤光片基板和阵列基板，其中，所述彩色滤光片基板包括基体、黑矩阵层、RGB色阻层、公共电极层和至少一凸柱，所述黑矩阵层和所述RGB色阻层形成于所述基体的同一侧表面上，所述凸柱设置于所述黑矩阵层上且所述凸柱由形成所述RGB色阻层的至少一次曝光显影形成，所述公共电极层覆盖所述RGB色阻层，且所述凸柱高出所述公共电极层的顶面。
  12. 根据权利要求11所述的液晶面板，其中，所述凸柱与所述阵列基板相抵接，所述公共电极层的所述顶面与所述阵列基板间隔设置。
  13. 根据权利要求11所述的液晶面板，其中，所述RGB色阻层包括第一色阻层、第二色阻层和第三色阻层，所述凸柱由所述第一色阻层、所述第二色阻层和所述第三色阻层中的一个形成或由两个及两个以上依次堆叠形成。
  14. 根据权利要求13所述的液晶面板，其中，所述第一色阻层、所述第二色阻层和所述第三色阻层的材料分别为红色像素树脂、绿色像素树脂和蓝色像素树脂，所述公共电极层的材料为氧化铟锡。
PCT/CN2013/070384 2013-01-09 2013-01-11 彩色滤光片基板及其制造方法和液晶面板 WO2014107890A1 (zh)

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CN104570183A (zh) * 2014-12-26 2015-04-29 深圳市华星光电技术有限公司 滤光片、液晶面板及一种滤光片制造方法
CN104965337A (zh) 2015-07-21 2015-10-07 深圳市华星光电技术有限公司 彩色滤光片的制备方法
CN105158962A (zh) * 2015-08-24 2015-12-16 武汉华星光电技术有限公司 一种彩色滤光片及其制作方法
CN106125390A (zh) * 2016-08-19 2016-11-16 武汉华星光电技术有限公司 液晶显示面板及液晶显示装置
CN107765486A (zh) * 2017-09-18 2018-03-06 合肥惠科金扬科技有限公司 一种液晶显示面板的基板支撑组件
CN107608111A (zh) * 2017-09-18 2018-01-19 合肥惠科金扬科技有限公司 一种液晶显示面板的基板支撑组件的加工工艺
CN108008567A (zh) * 2017-12-14 2018-05-08 深圳市华星光电技术有限公司 彩色滤光片基板及其制作方法
CN109031891B (zh) * 2018-07-20 2020-10-27 深圳市华星光电技术有限公司 曝光机的照明机构及其曝光方法
CN209486425U (zh) * 2018-10-31 2019-10-11 惠科股份有限公司 一种显示面板和显示装置
CN109254456A (zh) * 2018-11-13 2019-01-22 成都中电熊猫显示科技有限公司 液晶显示面板、cf基板及其制备方法
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