TWI351764B - Pixel structure and method for forming the same - Google Patents

Description

1351764

Sanda number: TW3530PA ► Nine, invention description: [Technical field of invention] The present invention relates to a halogen structure and a method for forming the same, and particularly relates to a halogen structure having a storage capacitor. [Prior Art] Please refer to Fig. 1, which shows a cross-sectional view of a conventional halogen structure. The pixel structure 100 has a substrate 109. A semiconductor layer φ 120 is formed on the substrate 109. The semiconductor layer 120 and the substrate 109 are covered with an insulating layer 150. A gate 116 is formed on the insulating layer 150 and is covered with an inner dielectric layer 190 on the gate 116. The insulating layer 150 and the inner dielectric layer 190 have two openings 162 to expose the semiconductor layer 120. A source 114, a drain 112, and a capacitor electrode 101 are formed on the inner dielectric layer 190. The source 114 and the drain 112 are electrically connected to the semiconductor layer 120 via the opening 162. A protective layer 102 is formed on the inner dielectric layer 190 and covers the source 114, the drain 112 and the capacitor electrode 101, and has a contact hole 163 to expose the source 114. The halogen electrode 103 is formed on the protective layer 102 and electrically connected to the source 114 via the contact hole 163. The capacitor electrode 101 of the halogen structure 100 is a conductive material, and the protective layer 102 is a dielectric material. The storage capacitor Cs1 is formed between the capacitor electrode 101 and the halogen electrode 103. However, due to the coverage of the protective layer 102, short circuits may occur between the germanium electrode 103 and the capacitor electrode 101 due to process problems. Although the thickness of the protective layer 102 can be increased to solve the above-mentioned problems, the storage capacitor Csl is relatively reduced. 6 1351764

Sanda number: TW3530PA In addition, the capacitor electrode 101 is generally made of an opaque material and is located in the visible region of the : : 昼 结构 structure 100 (not shown), so that the halogen element 103 is made of a light transmissive material. However, this design approach tends to reduce the aperture ratio of the pixel-structure 100 as the storage capacity of the storage capacitor Cs1 (e.g., the area of the storage capacitor Cs1 in the visible area) increases. As a result, the display brightness of the panel is lowered. In addition, this problem is more apparent in panels of the same size and higher resolution. φ [Summary of the Invention] The present invention relates to a pixel structure and a method of forming the same, which can increase the aperture ratio without changing the capacitance value. According to a first aspect of the invention, a halogen structure is proposed. The halogen structure comprises at least one transistor, a first storage capacitor, a first conductive layer, an inner dielectric layer, a second conductive layer, a protective layer and a third conductive layer. The first storage capacitor is electrically connected to the transistor. The inner dielectric layer covers the first conductive layer and has at least one first opening. The second conductive layer is formed on the portion of the inner dielectric layer and electrically connected to the first conductive layer via the first opening. The protective layer covers the transistor and the second conductive layer and has at least one second opening. The third conductive layer is formed on the partial protective layer and electrically connected to the transistor via the second opening. The first storage capacitor is composed of a third conductive layer, a protective layer and a second conductive layer. According to a second aspect of the present invention, a method of forming a halogen structure is proposed. The pixel structure has at least one transistor and a first storage capacitor. The first storage capacitor is electrically connected to the transistor. This formation method includes the following steps 7 1351764

Three-faced ·· TW3530PA » Step: First, form a first conductive layer. Next, an inner dielectric layer V is covered: on the first conductive layer, and has a first opening. Then, a second conductive layer is formed on the portion of the inner dielectric layer, and is electrically connected to the first conductive layer via the first opening. Next, a protective layer is covered on the transistor and the second conductive layer, and has a second opening. Finally, a third conductive layer is formed on the portion of the protective layer and electrically connected to the transistor via the second opening. The first storage capacitor is composed of a third conductive layer, a protective layer and a second conductive layer. In order to make the above description of the present invention more comprehensible, the following is a preferred embodiment of the invention, and is described in detail below with reference to the accompanying drawings: [Embodiment] The present invention is directed to having at least one storage capacitor for a conductive material. The structure of the pixel. The conductive material includes a light transmissive material, a reflective material, or a combination thereof. Embodiments of the present invention are described in detail by taking a pixel structure of a display panel in an optoelectronic device as an example. Further, the illustration of the embodiments is to omit certain elements in order to clearly show the technical features of the present invention. First Embodiment Referring to Figure 2A, there is shown a top plan view of a halogen structure of a first embodiment of the present invention. This embodiment is exemplified by a pixel structure 200 of a display panel in an optoelectronic device. As shown in Fig. 2A, the data line DT2 and the scan line SC2 are electrically connected to the pixel structure 200, respectively. Please refer to FIG. 2B, which is a cross-sectional view showing the structure of the halogen in FIG. 2A. Fig. 2B is a cross-sectional view taken along line 2B_2B' of Fig. 2A. Alizarin structure 200 contains

Sanda number: TW3530PA A transistor (not labeled), ~, - inner dielectric layer 29. Dimensions: =: ^, - a first conductive layer and a third conductive layer 243. Preferably, f: layer constitutive, and one (four) 280 includes a light-shielding pattern layer (the sputum structure 200 can selectively scan the line SC2 to a lesser one), and is located at least two parallel to the data line DT2 and the line SC2. The side of the person is to prevent light leakage from the edge of the data line DT2 and the first storage capacitor C. 290 is electrically connected to the transistor by covering the first guide (2). Inner Dielectric Layer The second conductive layer 242 is formed on i and has an opening 292. The second electrode 292 is electrically connected to the first J: inner dielectric layer 290 and passes through the opening body and the second conductive layer 242. The protective layer 280 is covered on the electro-crystalline layer, such as the forming portion, and has a third conductive layer. The first sixth is electrically connected via the opening 282 and the second conductive capacitor is used. And the protective layer smuggling layer 242. Qingshen Zhaoqian q Δ.t

A flow chart of the method. The book is shown in the shape diagram of the halogen structure of FIG. 2B, and the method of forming the substrate, the temperature 200 is as follows: as the 3A, the insulating layer 250 is at the semi-conducting =::H220, and then covering the second Doped regions. The +conductor layer 220 includes at least a region where the function is located/secret and an intrinsic region 222. In general, the intrinsic enthalpy is located in two doped regions: 22, which may be selectively; the second region of the vehicle and the two doped regions 224a, 224bq^ The intrinsic doping concentration of the heterogeneous region is between f and small, and at least ~, too, "Beast J in a doped region 224a, 224b of the intrinsic region 222 may or may not be doped Miscellaneous, if doped, this

The polarity of the ternary number TW3530PA ^ region 222 is preferably substantially different from the polarity of the two doped regions 224a, 224b and the other. In addition, the two doped regions, 222 and/or additional doped regions, may also be selected in the conductive layer 220 or not simultaneously formed in the semiconductor layer 220. The material f includes a quartz crystal containing a single crystal, a quartz crystal containing a microcrystal, an amorphous f-containing material, a mis-containing material, or a material thereof, or a combination thereof. & upgrade 25 〇Τ: ΓΓ shown 'formed the first conductive layer 241 on the insulation = 250. At this time, one of the transistors _216 is also formed at the same time. In the embodiment, the material f of the first conductive layer 241 is a reflective material (for example, silver, copper, iron, tin, lead, cadmium, molybdenum, tungsten, tantalum, titanium, button, bismuth, material, or the like) The oxide, or the above-mentioned telluride, or the description of the rabbit oxide, or the above-mentioned alloy, or the above-mentioned alloy, is an example, and the value is not limited thereto, and a transparent material (for example, indium tin) may be selectively used. Oxide: Ming zinc oxide, Shaoxi oxide, indium zinc oxide, cadmium tin oxide, or other materials, or a combination thereof, or a combination of a transparent material and a reflective material. Further, the first conductive layer 241 is connected to An electrode line having a level, for example, a common electrode line Vcom2, or alternatively a portion having a level electrode line, for example, a common electrode line VCQm2 as the first conductive layer 24 (as shown in FIG. 2A) ). In the present embodiment, the electrode wire, for example, the material of the electrode wire Vccln2 is made of a reflective material (eg, gold, silver, steel, iron, tin, wrong, recorded, turned, crane, condensed, chin, group, given) And other materials, the above-mentioned oxides, or the above-mentioned nitrides, or the above-mentioned nitrogen compounds, or the above-mentioned alloys, or a combination thereof, are examples, but are not limited thereto, 1351764

Sanda number: TW3530PA can selectively use transparent materials (such as: indium tin oxide, tin oxide, indium zinc oxide, surface oxide, zinc oxide, combination of the above), or transparent #质 and reflective materials The combination, the quality, or the conductive layer 241 is connected to the electrode lines, for example, the common vocabulary <the first material is substantially the same or different, and preferably, both of them have low process complexity. And the same as above, and then, as shown in FIG. 3C, covering the inner dielectric layer 50, and respectively forming openings in the inner layer dielectric: 0 in the insulating opening 23U, in the inner dielectric layer 290 and the insulating layer and Two then, as shown in Fig. 3D, form a second ^|. The inner dielectric layer 290 is connected to the first conductive layer 241 and the semiconductor layer 22 by a portion 292, 23 ι^2. The respective openings 231a and 231b are connected to the first body of the semiconductor layer 220 via the 〇zl〇B, and the 212 and the source are called. = copper, iron = layer enamel is a reflective material (such as: gold, silver, material 'or: 丄 crane, condensed, titanium, surface, give, or other compounds, 上述 the above two, or the above nitride, Or the above-mentioned nitrogen oxides, the combination of "mouth gold, or a combination of the above" is an example, but an oxygen-free material may also be selectively used (for example, antimony tin oxide, :: substance, indium) Oxide, tin oxide, or others, combinations of the above, or a combination of a transparent material and a reflective material. One of the source of the Japanese body 214 and the first of the 212 poles of the thunderstorm 逵拄# poor material line dT2 (such as the second Α __, L, the dry connection is connected to the broadcast > θ kg not) And the gate 216 of the transistor is electrically, and the field 4 SC2 (as shown in Figure 2). It must be stated that this real 11 1351764

Three signs: TW3530PA The openings 231a, 231b and 292 of the example are formed at different times, ' : but not limited to this, optionally using different transmittance masks (eg: *; halftone Openings 231a, 231b, and 292 are formed at the same time by a yellow light process of a reticle, a diffractive reticle, a grid pattern mask, or other reticle, or a combination thereof. Next, as shown in FIG. 3E, the protective layer 280 is covered on the transistor and the second conductive layer 242, and the protective layer 280 has an opening 282. Finally, as shown in Fig. 3F, a third conductive layer 243 (also referred to as a φφ-element electrode) is formed on a portion of the protective layer 280, and is electrically connected to the transistor via the opening 282. Therein, the opening 282 can selectively substantially align or misalign the opening 231b. As a result, the overall pixel structure 200 is as shown in Fig. 3F. In this embodiment, the material of the third conductive layer 243 is made of a transparent material (eg, indium tin oxide, aluminum zinc oxide, aluminum tin oxide, indium zinc oxide, cadmium tin oxide, or other materials, Or a combination of the above), but is not limited thereto, and may also selectively use a reflective material (eg, gold, silver, copper, iron, tin, boat, braid, turn, tungsten, condensed, chin, group, give Or other materials, or the above oxides, or the above-described nitrides, or the above-described nitrogen oxides, or the above-described alloys, or a combination thereof, or a combination of a transparent material and a reflective material.

In the present embodiment, since the first conductive layer 241 and the second conductive layer 242 have a common potential resistance, that is, a parallel design, the electrode lines, for example, the load impedance of the common electrode line V com2 can be reduced. In this way, cross-talk can be avoided when the display panel in the optoelectronic device displays the kneading surface. ° 12 1351764

: TW3530PA. Further, the insulating layer 250, the inner dielectric layer 290 and the protective layer 280; at least one of the materials, including inorganic materials (such as: yttrium oxide, tantalum nitride, nitrogen: yttrium oxide, yttrium oxide, nitriding铪, tantalum carbide, or other materials, or a combination of the above), organic materials (such as: photoresist, polypropylene powder (PAE), polyfluorenes, polyesters, polyesters, polyolefins , benzocycl Clobutene (BCB), HSQ (hydrogen silsesquioxane), MSQ (methyl silesquioxane), Shihe oxygen hydrocarbon (SiOC-H), or other materials, or a combination thereof, or a combination thereof . • The second conductive layer 242 of this embodiment can be selectively made of a reflective material, a light transmissive material, or a combination thereof. The second conductive layer 242 of the figure is an embodiment of the reflective material. Referring to Figure 4, there is shown a cross-sectional view of the other-alkaline structure of the first embodiment. The halogen structure 3〇〇 comprises a transistor (not labeled), a first storage electrical connection, a first conductive layer 341, an inner dielectric layer 390, and a first-enhanced beta. . A conductive layer 342, a protective layer 380 and a third conductive layer 343. The second conductive layer 342 is formed on the portion of the inner dielectric layer 390 and electrically connected to the first conductive layer 341 via the openings 392 铯 k, 圭 & The material of the second conductive layer M2 of the second image is the reflection material as an example, and the material of the second layer of the third layer of the fourth layer of the fourth layer is a light-transmitting material, but not Limited to this. The content of the upper 诎 曰 曰 曰 34 昼 昼 昼 34 34 34 34 34 34 34 34 34 34 34 34 34 34 34 34 34 34 34 34 34 34 34 34 34 34 34 34 34 34 34 34 34 34 34 34 34 34 34 — 匕 Do not repeat the narrative. It should be noted, however, that the second material of the halogen structure 200, a conductive layer 242 and the first conductive layer 342 of the pixel structure 300, is y n , , and 昼 also has the above-mentioned manner. And because of the different materials of the element, the material is used as an example. Same 13 1351764 ?

^三_: TW3530PA • The second conductive layer 342 of the structure 300 is an example of a light-transmitting material, and therefore, the halogen structure 300 can be used to match different application embodiments. SECOND EMBODIMENT Referring to Figure 5A, there is shown a top plan view of a halogen structure of a second embodiment of the present invention. This embodiment is exemplified by a pixel structure 400 of a display panel in an optoelectronic device. As shown in FIG. 5A, the data lines DT4i: DT42 and the scan lines SC4 are electrically connected to the pixel structure 4A, respectively. Please refer to Fig. 5B' for a section showing the structure of the halogen in Fig. 5A. ^ 5B is a cross-sectional view taken along line 5Β·5Β in Figure 5A. The structure 400 includes a transistor (not labeled), a first storage layer, a first conductive layer 441, an inner dielectric layer 490, a second two-dimensional arrest, a second conductive layer (4), and a fourth preferred , 昼 * structure _ can be included - and parallel to the side of the data lines DT41, DT42 and scan line sc4 ^ = two, to prevent the edge of the data line 4 DT42 and scan line = ^ Light leakage. The first storage capacitor Cs41 is electrically connected to the electric solar cell 490 over the first conductive layer 441, and has an inner layer " an electric layer two conductive layer 442 formed on a portion of the inner dielectric layer 490. :::2. No. 492 is connected to the first conductive layer 441. The protective layer and the second conductive layer 442 have an opening 482; the layer 443 forms a partial protective layer 48 and is opened via a transistor.篦ra邋雪思h Electrical connection 4 four conductive layer 444 covering the second conductive layer 442 and part 1351764

One of the TW3530PA inner dielectric layers 490 is such that the first storage capacitor layer 443, the protective layer 480, and the fourth conductive layer 444 (4) are formed of a third conductive layer. Referring to Figures 6A to 6G, a flow chart of the method of Figure 5b is shown. Formation of the Alizarin Structure 400 As shown in the figure, a semiconductor layer 42 is formed on the substrate 409 as follows: for example, the insulating layer 45 is on the semiconductor layer 42. Abundantly, and then covering the two doped regions 424a, smear and intrinsic; gamma comprising at least region 422 is located in the two doped regions 42 as, in general, an embodiment of the intrinsic invention, optionally Join at least 曰. Preferably, the region 422 and the two doped regions 424a, 424b are between 丨1 and the nucleus region of the intrinsic outer doped region, and the other is 黾Ψ ^ , ^ The heterogeneous regions 424a, 424b to the 〆-, the intrinsic region 422 can push 424b the polar fish of the zoning region 422 - the complete impurity, the right doping, the polarity is better on the ride - no π junction region 424a , 424b and another doped area intrinsic area or another tmi#sii£ 424a, 424b, _42. Or not formed at the same time;: == is formed in the material cladding 420 of the semiconductor layer 420. In addition, the semi-mass and polycrystalline stone-containing materials contain Shishi material, microcrystalline stone material, material, amorphous yttrium material, material 皙 甘 甘 它, its material, or a combination of the above. 7 material 3 coffin shell, or its, then, as the first line of the map + layer. At this time, the first conductive layer 441 is formed in the insulating embodiment, and the first conductive layer Θ4 = θ416 is also formed at the same time. In this silver, copper, iron, tin, wrong, ore, material: 疋 with reflective material (such as: gold, 'molybdenum bismuth, Syria, titanium, group, give, or 15 1351764

Sanda number: TW3530PA Other materials, or the above oxides, or the above-mentioned nitrides, or the above: nitrogen oxides, or the above alloys, or a combination thereof, are examples, but *- are not limited thereto, Selectively use transparent materials (such as: indium tin oxide, • zinc oxide, tin oxide, indium zinc oxide, money tin oxide, or other materials, or a combination of the above), or transparent materials and A combination of reflective materials. In addition, the first conductive layer 441 is connected to a level electrode line, for example, the common electrode line Vcom4 (as shown in FIG. 5A), but is not limited thereto, and some partially-positioned electrodes may be selectively used. A line, for example, a common electric φ pole line Vcom4 is regarded as the first conductive layer 441. In this embodiment, the electrode line, for example, the material of the common electrode line Vcom4 is made of a reflective material (eg, gold, silver, copper, iron, tin, erroneous, tin, antimony, crane, sulphur, titanium, group, The application, or other materials, or the above oxides, or the above-mentioned vapors, or the above-mentioned nitrogen oxides, or the above-mentioned alloys, or a combination thereof, are examples, but are not limited thereto, and may be selectively used. Transparent material (such as: indium tin oxide, rheumatism oxide, tin oxide, indium zinc oxide, tin tin oxide, or other materials, or a combination of the above), or a combination of transparent materials and reflective materials . In other words, the first conductive layer 441 is connected to the electrode lines. For example, the materials of the common electrode lines Vcom4 are substantially the same or different, and preferably, the two are substantially the same to reduce the process complexity. Next, as shown in FIG. 6C, the inner dielectric layer 490 is covered on the insulating layer 450, and an opening 492 is formed in the inner dielectric layer 490 and the two openings 431a and 431b in the inner dielectric layer 490 and the insulating layer 450, respectively. Then, as shown in Fig. 6D, a second conductive layer 442 is formed on a portion of the inner dielectric layer 490, and via openings 492, 431a, 431b, respectively, 16 1351764

Sanda number: TW3530PA is electrically connected to the first conductive layer 441 and the semiconductor layer 420. The second conductive layer is electrically connected to the semiconductor layer 420 via the openings 431a and 431b; the 442 is a drain 412 and a source 414 of the transistor. In this embodiment, the second conductive layer 442 is made of a reflective material (eg, gold, silver, copper, iron, tin, lead, cadmium, molybdenum, tungsten, tantalum, titanium, button, bell, or other material). Or the above-mentioned oxide, or the above-mentioned nitride, or the above-mentioned nitrogen oxide, or the above-mentioned alloy, or a combination thereof, is an embodiment, but is not limited thereto, and a transparent material may be selectively used (for example: Indium tin oxide, aluminum zinc oxide, aluminum tin oxide, indium zinc oxide, cadmium tin oxide, or other materials, or a combination thereof, or a combination of a transparent material and a reflective material. Furthermore, one of the pole 412 and the source 414 of the electric male body is electrically connected to the feed line DT4 DT42 (as shown in FIG. 5A), and the gate 4a16 of the transistor is electrically connected to the scan line SC4. (as shown in Figure 5A). It should be noted that the openings 431a, 431b, and 492 of the present embodiment are formed at different times, but are not limited thereto, and a mask having different light transmittances (for example, a half-tone mask) may be selectively used. The yellow light process of the diffractive reticle, the grid pattern mask, or other reticle, or a combination thereof, forms openings 431a, 431b, and 492 at the same time. Next, as shown in FIG. 6E, the fourth conductive layer 444 is covered on the second conductive layer 442 and a portion of the inner dielectric layer 490. In the present embodiment, the material of the fourth conductive layer 444 is a light-transmitting material as an embodiment. However, the present invention is not limited thereto. A reflective material or a combination of a light-transmitting material and a reflective material may be selectively used. In addition, since the first conductive layer 441, the second conductive layer 442, and the fourth conductive layer 444 are electrically connected to each other, the first conductive layer 441, 17 1351764

Sanda number: TW3530PA The level of the second conductive layer 442 and the fourth conductive layer 444 are substantially the same. And the first conductive layer 441, the second conductive layer 442, and the fourth conductive layer 444; the level includes, for example, a common level. In addition, in this embodiment, the first parasitic capacitance is between the drain 412 and the scan line SC4, and the sum of the capacitances between the drain 412 and the data lines DT41 and DT42 is substantially a second parasitic. capacitance. In addition, a liquid crystal capacitor (not shown) is disposed between the halogen electrode of the halogen structure 400 and the common electrode (not shown). One of the pixel structures 400 is substantially equal to the sum of the liquid crystal capacitor and the first storage capacitor Cs41. The area of the fourth conductive layer 444 is determined by the ratio of the first parasitic capacitance to the halogen capacitance, the ratio of the second parasitic capacitance to the halogen capacitance, and the ratio of the first storage capacitor Cs41 to the liquid crystal capacitance. The area of the fourth conductive layer 444 in the present embodiment is preferably substantially larger than the area of the second conductive layer 442, but is not limited thereto, and the fourth conductive layer 444 may be selectively changed according to design requirements. The area is, for example, substantially smaller than the area of the second conductive layer 442, substantially equal to the area of the second conductive layer 442, or a combination thereof. • Then, as shown in FIG. 6F, the protective layer 480 is overlaid on the transistor and the second conductive layer 442, and the protective layer 480 has an opening 482. Finally, as shown in Fig. 6G, a third conductive layer 443 (also referred to as a germanium electrode) is formed on a portion of the protective layer 480, and is electrically connected to the transistor via the opening 482. Therein, the opening 482 can selectively substantially align or misalign the opening 431b. As a result, the overall pixel structure 400 is as shown in Fig. 6G. In this embodiment, the material of the third conductive layer 443 is made of a transparent material (eg, indium tin oxide, aluminum zinc oxide, aluminum tin oxide, indium 18 丄 is 1764).

• : TW3530PA ' . Zinc telluride, cadmium tin oxide, or other materials, or combinations of the above) are • Examples, but not limited to, selective use of reflective materials (eg, gold, silver, copper, iron, Tin, wrong, box), turned, town, ching, ching, short, giving, or other materials, or the above oxides, or the above-mentioned nitrides, or the above-mentioned nitrogen oxides, or the above alloys, or the above Combination), or a combination of a transparent material and a reflective material. In the embodiment, the fourth conductive layer 444 is made of a light-transmitting material. Therefore, the ruthenium structure 400 can increase the aperture ratio without changing the capacitance value, but is not limited to the use of a reflective material or a light-transmitting material. And a combination of reflective materials. Further, the fourth conductive layer 444 can selectively overlap with any gate line or data line. Thus, the load on the gate line or the data line can be reduced, but is not limited thereto, and can be selectively partially overlapped. Further, the first conductive layer 441, the second conductive layer 442, and the fourth conductive layer 444 have a common potential resistance, that is, a parallel design. Therefore, the load impedance of the electrode line 'e.g., the common electrode line Vcotn4 can be lowered. In this way, it is possible to avoid the occurrence of crosstalk when the display panel in the optoelectronic device displays the kneading surface. Furthermore, at least one of the insulating layer 450, the inner dielectric layer 490 and the protective layer 480 is made of an inorganic material (eg, cerium oxide, cerium nitride, cerium oxynitride, cerium oxide, tantalum nitride, tantalum carbide, Or other materials, or a combination of the above, organic materials (such as: photoresist, polvarylene ether (PAE), polyfluorenes, polyesters, polyalcohols, polyolefins, benzocyclobutene ( Benzylcyclclobutene ; BCB) , HSQ (hydrogen silsesquioxane ) , MSQ ( methyl silesquioxane ) , oxy oxygenation 19 1351764

Sanda number: TW3530PA (SiOC-H), or other materials, or a combination thereof, or a combination thereof. THIRD EMBODIMENT Referring to Fig. 7A, there is shown a top plan view of a halogen structure of a third embodiment of the present invention. This embodiment is exemplified by a pixel structure 500 of a display panel in an optoelectronic device. As shown in Fig. 7A, the data line DT5 and the scan line SC5 are electrically connected to the halogen structure 500, respectively. Please refer to FIG. 7B for a cross-sectional view showing the structure of the pixel in FIG. 7A. Fig. 7b is a section _ of the 7B-7B' hatching in Fig. 7A. Alizarin structure 5 〇〇 ^ person a transistor (not labeled), a first storage capacitor cs5l, a m 3 SM spear - storage fan CS52, a third storage capacitor CS53, a first conductive layer 5 bamboo - 2 The dielectric layer 590, the second conductive layer 542, the insulating layer: the two body layer 52A, a protective layer 580 and a third conductive household are guided and parallel to the data line DT5 and the sweep, s,, and e ), drink τ5 fine hard SC5 at least ~ soil edge, to prevent the data line DT5 and the scan of the Hungarian line of milk at least - the edge of the alizarin structure, optionally containing a cover; father good land, and witch Divide you to sign (10) m mouth tea layer (Wu draw no), drink to prevent light leakage from the data line. The first storage capacitor Cm is electrically overlaid on the first conductive layer 541; the transistor. Inner Dielectric Layer The two conductive layers 542 are formed in a portion of the inner layer f having an opening σ 592. The first 592 is electrically connected to the first conductive layer;::. The cladding layer 590 is over the opening body and the second conductive layer 542, and the protective layer 580 is covered on the electro-crystalline layer 543 to form a partial protective layer 58 with an opening 582. The third is electrically conductive to the transistor. The first-storage capacitor c is electrically connected by the opening 582. The SS1 is controlled by the third thunder. 5 ^ equals the electric ceremony M3, the protective layer 20 x^1764

Erda number: TW3530PA 58〇 and second conductive layer 542. The second storage conductive layer 541, the insulating layer 550, and a portion of the semiconductor layer 52 are formed. The first storage capacitor Cs53 is composed of a second conductive layer 542, an inner dielectric layer 59A, an insulating layer 550, and a portion of the semiconductor layer 520. Please refer to Figures 8A-8F for a flow chart showing the method of modeling the pixel structure of Figure 7B. The method of forming the halogen structure 500 is as follows: As shown, a semiconductor layer 52 is formed on the substrate 509, and the insulating layer 550 is on the semiconductor layer 52. The semiconductor layer 52^ is included in the lower portion of the template-type metal layer 541 of the intrinsic region as the implementation layer / and the S-signal region 522 is located in the two doped regions, such as a, one less, and the other is彳, can be transferred to another ==...two doped regions%,· Between the eve and the doping of the additional doped region 至少 at least each of the 524a, 524b Less than two, if doped, the polarity of the intrinsic region (2) = 524b and the polarity of the other doped regions are: - a 'hybrid zone plus, Mu miscellaneous zone 524a, 524b, too good quality only qualitatively different. Alternatively, two selectively formed simultaneously in the half or additional doped regions may also be in the bulk layer 520 t. Furthermore, the semiconducting two = is not formed in the semiconducting: the quality of the crystal, the crystallite, and the b; the inclusion of the single crystal, the crucible, the beta, the amorphous Shi Xi Ti Miao 尨 "Material, or a combination of the above. "After, as shown in Figure 8 on layer 550. At this time, the f conductive layer 541 is also formed at the same time as the gate 516 of the insulator. Yu Ben 21 1351764

Sanda number: TW3530PA. In the embodiment, the material of the first conductive layer 541 is made of reflective material (such as: gold, · 'silver, copper, iron, tin, wrong, tin, chain, tungsten, bismuth, chin, Idan And, or other materials, or the above-mentioned oxides, or the above-mentioned cerium compounds, or the above-described iu oxides, or the above-mentioned alloys, or a combination thereof, are examples, but are not limited thereto, and may be optionally Use a transparent material (such as: indium tin oxide, luminal zinc oxide, tin oxide, indium zinc oxide, tin tin oxide, or other materials, or a combination of the above) or a combination of transparent and reflective materials . In addition, the first conductive layer 541 is connected to a level electrode line, for example: • a common electrode line VC() m5 (as shown in FIG. 7A), but is not limited thereto, and may also be selectively used. The electrode line of the level, for example, the common electrode line VC() m5 serves as the first conductive layer 541. Wherein, in this embodiment, the common electrode line

The material of Vcom5 is made of reflective material (such as gold, silver, copper, iron, tin, erroneous, braided, key, bismuth, antimony, titanium, neon, nitrile, or other materials, or the above oxides, or the above nitrogen The compound, or the above-mentioned nitrogen oxide, or the above-mentioned alloy, or a combination thereof, is an example, but is not limited thereto, and a transparent material (eg, indium tin oxide, zinc oxide, etc.) may be selectively used. Tin® oxide, indium zinc oxide, cadmium tin oxide, or other materials, or combinations thereof, or a combination of transparent and reflective materials. In other words, the first conductive layer 541 is connected to the electrode lines. For example, the materials of the common electrode lines VC() m5 are substantially the same or different, and preferably, the two are substantially the same to reduce the process complexity. As described above, the doping region 524a of the semiconductor layer 520 of the present embodiment extends below the first metal layer 541 as an example. Therefore, the second storage capacitor Cs52 is composed of the first conductive layer 541, the insulating layer 550, and the partial semiconductor layer 520. It must be noted that it extends to the first metal layer 541 22 1351764

The semiconductor layer 520 below the TW3530PA may also be selectively connected to the semiconductor layer 520 under the gate 516 through a connection layer (not shown). The semiconductor layer 520 extending below the first metal layer 541 includes at least one of at least one doped region 524a/524b, at least one other doped region, and at least one intrinsic region 522. The material of the connection layer may use at least one of the first conductive layer 541, the second conductive layer 542, the third conductive layer 543, and the semiconductor layer 520. Next, as shown in FIG. 8C, the inner dielectric layer 590 is covered on the insulating layer 550, and openings 592 are formed in the inner dielectric layer 590 and the two openings 531a and 531b in the inner dielectric layer 290 and the insulating layer 550, respectively. . Then, as shown in FIG. 8D, the second conductive layer 542 is formed on a portion of the inner dielectric layer 590 and electrically connected to the first conductive layer 541 and the semiconductor layer 520 via the openings 592, 531a, and 531b, respectively. The second conductive layer 542 electrically connected to the semiconductor layer 520 via the openings 531a, 531b serves as one of the gates 512 and a source 514 of the transistor. In this embodiment, the material of the second conductive layer 542 is made of a reflective material (eg, gold, silver, copper, iron, tin, writh, mine, key, crane, sputum, titanium, group, give, or other materials). Or the above-mentioned oxide, or the above-mentioned nitride, or the above-mentioned nitrogen oxide, or the above-mentioned alloy, or a combination thereof, is an embodiment, but is not limited thereto, and a transparent material may be selectively used (for example: Indium tin oxide, aluminum zinc oxide, aluminum tin oxide, indium zinc oxide, cadmium tin oxide, or other materials, or a combination thereof, or a combination of a transparent material and a reflective material. Furthermore, one of the source 514 and the drain 512 of the transistor is electrically connected to the data line DT5 (as shown in FIG. 7A), and the gate 516 of the transistor is electrically 23 1351764.

Sanda number: TW3530PA is connected to scan line SC5 (as shown in Figure 7A). It should be noted that the present embodiment: the openings 531a, 531b and 592 of the embodiment are formed at different times, but are not limited thereto, and a mask having different transmittances can be selectively used (eg: 'half The yellow light process of the dimmer cover, the diffractive reticle, the grid pattern mask, or other reticle, or a combination thereof, forms openings 531a, 531b, and 592 at the same time. Next, as shown in FIG. 8E, the protective layer 580 is covered on the transistor and the second conductive layer 542, and the protective layer 580 has an opening 582. • Finally, as shown in FIG. 8F, a third conductive layer 543 (also referred to as a germanium electrode) is formed on a portion of the protective layer 580 and electrically connected to the transistor via the opening 582. Therein, the opening 582 can selectively substantially align or misalign the opening 531b. The third storage capacitor Cs53 is composed of a second conductive layer 542, an inner dielectric layer 590, an insulating layer 550, and a portion of the semiconductor layer 520. As a result, the overall pixel structure 500 is as shown in Fig. 8F. In this embodiment, the material of the third conductive layer 543 is made of a transparent material (eg, indium tin oxide, zinc oxide, sulphur oxide, indium zinc oxide, tin oxy-oxide, or other materials). Or a combination of the above), but is not limited thereto, and may also selectively use a reflective material (eg, gold, silver, copper, iron, tin, erroneous, tin, copper, bismuth, titanium, titanium, group, A combination of a given or other material, or an oxide of the above, or a nitride of the above, or a gas oxide as described above, or an alloy of the above, or a combination thereof, or a transparent material and a reflective material. In the present embodiment, the first conductive layer 541 and the second conductive layer 542 have a common potential resistance, that is, a parallel design, thereby reducing the load impedance of the electrode lines, for example, the common electrode lines VCC)m5. In this way, you can avoid 24

Erda No.: TW3530PA The display panel in the optoelectronic device produces the W-tone phenomenon when the semi-conductive screen of this embodiment is displayed. In addition, the lower portion of the electric layer 541 is a sub-region extending to the first-conductance k and the third residual id. 'To further form a second storage power, 1 & edge layer 550, inner dielectric layer 590 and protective layer 580, / "material" contains inorganic materials (such as: oxidized stone eve, nitride eve, Nitrogen citrate, oxidative, cerium nitride, carbon carbide, or other materials, or

Combination), organic materials (such as: photoresist, polyarylene ether (PAE), polyfluorenes, polyesters, polyalcohols, polyolefins, benzocyclobutene (BCB), HSQ (hydrogen silsesquioxane), MSQ (methyl silesquioxane), Shihe oxygen carbonitride (SiOC-H), or other materials, or a combination thereof, or a combination thereof.

The second conductive layer 542 of this embodiment can be selectively made of a reflective material, a light transmissive material, or a combination thereof. The second conductive layer 542 of FIG. 7B is an embodiment of a reflective material. Referring to Figure 9, there is shown a cross-sectional view of another unitary structure of the third embodiment. The halogen structure 6A includes a transistor (not labeled), a first storage capacitor Cs01, a second storage capacitor q2, a second storage capacitor CS63, a first conductive layer 641, and an inner dielectric layer 690. A second conductive layer 642, a semiconductor layer 620, and an insulating layer 65A: a protective layer 680 and a third conductive layer 643. The second conductive layer 222 is formed on a portion of the inner dielectric layer 690 and is electrically connected to the first conductive layer 641 via the opening 692. The material of the second conductive layer 542 in FIG. 7B is a reflective material, and the material of the second conductive layer 642 in FIG. 9 is a light-transmitting material, but is not limited thereto. The above content is a vegan celebrity 25 1351764

Sanda number: TW3530PA structure 500 is an example to illustrate its formation method. The formation of the halogen structure 600: The method is the same as the method of forming the pixel structure 500, and therefore is not repeated. However, it is worth noting that the material of the second conductive layer 542 of the halogen structure 500 and the second conductive layer 642 of the halogen structure 600 is a different example of the material. Similarly, the halogen structure 600 also has the above-described manner. Moreover, since the second conductive layer 642 of the halogen structure 600 is an example of a light transmissive material, the halogen structure 600 can be used to suit different application embodiments. Fourth Embodiment Referring to Fig. 10A, there is shown a top view of a pixel structure of a fourth embodiment of the present invention. This embodiment is exemplified by a pixel structure 700 of a display panel in an optoelectronic device. As shown in Fig. 10A, the data lines DT7, DT72, and the scan lines SC7 are electrically connected to the halogen structure 700, respectively. Please refer to FIG. 10B, which is a cross-sectional view showing the structure of the halogen in FIG. 10A. Fig. 10B is a cross-sectional view taken along line 10B-10B' of Fig. 10A. The structure 700 includes a transistor (not labeled), a first storage capacitor Cs71, a second storage capacitor Cs72, a third storage capacitor Cs73, a first conductive layer 741, an inner dielectric layer 790, and a a second conductive layer 742, a semiconductor layer 720, an insulating layer 750, a protective layer 780, a third conductive layer 743, and a fourth conductive layer 744. Preferably, the halogen structure 700 can selectively include a light shielding pattern layer (not shown) located at a side parallel to at least one of the data lines DT71, DT72 and the scan line SC7 to prevent the data line DT71, Light leakage occurs at the edge of at least one of DT72 and scan line SC7. 26 达号: TW3530pa 象0 储存 A storage capacitor Csn is electrically connected to the 7th 〇 layer on the 'conductive layer%, and the second day: inside the body door The layer: the conductive layer 742 is formed on a portion of the inner layer, and the 792 is electrically connected to the first conductive layer 741790, and the layer 780 is covered by the opening body and the second conductive layer 742. Crystal screen 7 heart... 丄 eight have - opening 782. The second layer 7 forms part of the protective layer, and the younger one is electrically conductive to the transistor. The fourth conductive layer 7 4 4 is electrically connected to the inner layer dielectric sound 79η p by the opening 782. The second conductive layer 742 and the partial layer w are obtained. The first storage capacitor h is provided by the third conductive layer W and the protective layer 780. The fourth conductive crucible 7 is composed of a heart. The second health production is - θ 744 and the second conductive layer 742 and part of the semiconductor two. The seventh conductive layer 74, the fourth conductive layer 744, and the inner layer are composed of a second conductive layer and a partial semiconductor layer 720.曰, 1 electrical layer 79 〇, the shape of the insulating layer 750, a 咖 结构 结构 第 i i i i i i i i i i i i i i i i i i i i i i i i i i i i The method for forming the halogen structure 700 is as follows: as shown in FIG. 8 , a covering-insulating layer 750 is formed on the substrate 7〇9 in the semi-conducting semi-conducting county (10), and at least two doping regions 724a and 724b are included. ; — 2: Up. The semiconductor layer, the package, and the doped region are extended to the first metal-intrinsic region 722. This embodiment is an example. In general, the intrinsic area 722 is below the level/41 and is the implementation cost. Preferably, in the embodiment of the present invention, the ratio of the impurity of the other impurity-changing region is substantially smaller than that of the two-doped region, _ less _ 者 = y = 22, and two _ 27 351 764

Erda number: TW3530PA at least one of the hetero-regions 724a, 724b, the intrinsic region 7 is heterogeneous, if doped, the polarity of the intrinsic region 722 and two: doping or not doping with additional pure polarity is preferred In the real f, different areas, such as b regions 724a, 724b, intrinsic regions (3) and/or, doped simultaneously at the semiconductor layer 72, may also be selected 720. Furthermore, the material of the semiconductor layer 72 is composed of a germanium-containing material of the semiconductor layer microcrystals: a germanium containing an anthracene material, a coffin or another village embodiment, a first guide: a dipole 716 Also formed at the same time. In this silver, copper, iron, tin:: two materials are reflective materials (such as: gold, other materials, or the above oxides 7,, -, titanium, surface, give, or nitrogen oxides, or the above The alloy, or, or the above, is not limited to this, and the combination thereof is an example, but zinc oxide, 33 = transparent material (such as: indium tin oxide, other materials, or on: oxide, (4) In addition, the first electric layer = a combination of a transparent material and a reflective material. The common electrode line V is connected to an electrode line having a level, for example, an optional use portion = as shown, but is not limited thereto. V- can also be used as the first guide: the electrode line of the quasi-two: for example: common electrode line, for example: shared lightning = where 'in this embodiment, the material of the electrode silver, copper, iron, tin _7 is Reflective material (eg gold,

Straight to the material t 4 , lead, cadmium, molybdenum, tungsten, titanium, titanium, button H 4 material H to find the compound, or the nitride of the domain, or 28 1351764

Sanda number _· TW3530PA oxynitride, or the above alloy, or a combination thereof, is an example, but: not limited thereto, selective use of transparent materials (eg, indium tin oxide, : inscription oxidation A combination of a material, a tin oxide, an indium zinc oxide, a tin oxide, or other materials, or a combination thereof, or a combination of a transparent material and a reflective material. In other words, the first conductive layer 741 is connected to the electrode lines. For example, the materials of the common electrode lines Vcom7 are substantially the same or different, and preferably, the two are substantially the same to reduce the process complexity. As described above, the doped region 724a of the semiconductor layer 720 of the present embodiment extends below the first metal layer 741. • For the sake of example, the second storage capacitor Cs72 is composed of the first conductive layer 74, the insulating layer 750, and a portion of the semiconductor layer. 720 is composed. It should be noted that the semiconductor layer 720 extending below the first metal layer 741 may also selectively connect the semiconductor layer 720 under the gate 716 through a connection layer (not shown). The semiconductor layer 720 or block extending below the first metal layer 741 includes at least one of at least one doped region 724a/724b, at least one other doped region, and at least one intrinsic region 722. The material of the connection layer may be at least one of the first conductive layer 741, the second conductive layer 742, the third conductive layer 743, and the semiconductor layer 720. Next, as shown in FIG. 11C, the inner dielectric layer 790 is covered on the insulating layer 750, and an opening 792 is formed in the inner dielectric layer 790 and the two openings 731a and 731b in the inner dielectric layer 790 and the insulating layer 750, respectively. Then, as shown in FIG. 11D, the second conductive layer 742 is formed on a portion of the inner dielectric layer 790, and electrically connected to the first conductive layer 741 and the semiconductor layer 720 via the openings 792, 731a, and 731b, respectively. Wherein, the second conductive layer electrically connected to the semiconductor layer 720 via the openings 731a, 731b 29 1351764

Sanda number: TW3530PA

742 is = 1 pole 712 and a source 7 of the transistor. The material of the second conductive layer 742 in this embodiment is a reflective material (eg, gold, silver, copper, iron, tin, lead, cadmium, molybdenum, Tungsten, tantalum, titanium, button, bell, or other material, or the above oxide, or the above nitride, or the above nitrogen oxide or the above 5 gold, or a combination thereof, is an embodiment, but is not limited thereto This can also optionally use transparent materials (such as: indium tin oxide, zinc oxide: aluminum tin oxide, indium zinc oxide, cadmium tin oxide, or other materials, or a combination of the above), Qian Ming A combination of material and reflective material. One of the transistors, the pole 712 and the source 714, utilizes an opening 731 & Electrical connection. Furthermore, one of the source 714 and the drain 712 of the transistor is electrically connected to the data line DT7 DT72 (as shown in FIG. 10A) and the gate 716 of the transistor is electrically connected to the scan line SC7 ( As shown in the figure of the 10th person). It should be noted that the openings 731a, 731b, and 792 of the embodiment are formed at different times, but are not limited thereto, and a mask having different transmittances may be selectively used (eg, a half dimming cover, The yellow light of the diffracted light, the grid pattern mask, or other reticle, or a combination thereof, is released at the same time to form openings 73la, 73bb and 792. Next, the fourth conductive layer 744 is overlaid on the second conductive layer 742 and a portion of the inner dielectric layer 790 as shown in FIG. 11E. In the present embodiment, the material of the fourth conductive layer 744 is a light-transmitting material as an embodiment. However, the present invention is not limited thereto. A reflective material or a light-transmitting material and a reflective material can be selectively used. In addition, due to the first conductive layer 741, the second conductive layer 742, and the fourth conductive layer? 44 is electrically connected to each other, and thus the levels of the first conductive layer 741, the second conductive layer 742, and the fourth conductive layer 744 are substantially the same. 30 1351764

The third level is TW3530PA. The 'levels of the first conductive layer 741, the second conductive layer 742, and the fourth conductive layer 744 include, for example, a common level. In addition, in the present embodiment, the first parasitic capacitance is between the drain 712 and the scan line SC7, and the sum of the capacitances between the drain 712 and the data lines DT71 and DT72 is substantially one. Two parasitic capacitances. In addition, there is a liquid crystal capacitor (not shown) between the halogen electrode of the germanium structure 700 and the common electrode (not shown). One of the pixel structures of the halogen structure is substantially equal to the sum of the liquid crystal capacitance and the first storage capacitor Cs71. The surface of the fourth conductive layer 744 is determined by the ratio of the first parasitic capacitance to the halogen capacitance, the ratio of the second parasitic capacitance to the halogen electrode, and the ratio of the first storage capacitor Cs71 to the liquid crystal capacitance. The area of the fourth conductive layer 744 in the present embodiment is preferably substantially larger than the area of the second conductive layer 742, but is not limited thereto, and the fourth conductive layer 744 may be selectively changed according to design requirements. The area is, for example, substantially smaller than the area of the second conductive layer 742, substantially equal to the area of the second conductive layer 742, or a combination thereof. Then, as shown in Fig. 11F, the protective layer 780 is overlaid on the transistor and the second conductive layer 742, and the protective layer 780 has an opening 782. Finally, as shown in Fig. 11G, a third conductive layer 743 (also referred to as a halogen electrode) is formed on a portion of the protective layer 780, and is electrically connected to the transistor via the opening 782. Therein, the opening 782 can be selectively aligned or not substantially aligned with the opening 731b. The third storage capacitor Cs73 is composed of a second conductive layer 742, an inner dielectric layer 790, an insulating layer 750, and a portion of the semiconductor layer 720. As a result, the overall pixel structure 700 is as shown in FIG. 11G. In this embodiment, the material of the third conductive layer 743 is made of a light transmissive material (eg, indium 31 1351764).

Sanda number: TW3530PA. Tin oxide, chain zinc oxide, Shaoxi oxide, indium zinc oxide, staggered tin: oxide, or other materials, or a combination of the above) is an implementation cost, but not ··· In addition, it is also possible to selectively use a reflective material (eg, gold, silver, copper, iron, tin, lead, cadmium, molybdenum, tungsten, tantalum, titanium, aluminum, tantalum, or other materials, or oxides thereof). Or the above-mentioned nitride, or the above-mentioned nitrogen oxide, or the above-mentioned alloy, or a combination thereof, or a combination of a transparent material and a reflective material. In the present embodiment, the fourth conductive layer 744 is made of a light-transmitting material. Therefore, the halogen structure 700 can increase the aperture ratio without changing the capacitance value, but is not limited thereto, and a reflective material or a combination of a light-transmitting material and a reflective material can also be used. In addition, the fourth conductive layer 744 can selectively overlap with any gate lines or data lines, thereby reducing the load on the gate lines or data lines, but is not limited thereto, and can also be selectively partially overlapped. Furthermore, the first conductive layer 741, the second conductive layer 742, and the fourth conductive layer 744 have a common potential resistance, that is, a parallel design, thereby reducing the load impedance of the electrode line, for example, the common electrode line Vcom7. In this way, it is possible to avoid the occurrence of crosstalk when the display panel in the optoelectronic device displays the kneading surface. In addition, the doped region 724a of the semiconductor layer 72 of the present embodiment extends to the lower portion of the first conductive layer 741 as an embodiment to further form the second storage capacitor C.77 and the third storage capacitor CS73. Furthermore, at least one of the insulating layer 750, the inner dielectric layer 790 and the protective layer 78 is made of an inorganic material (eg, yttrium oxide, tantalum nitride, nitrous oxide, yttrium oxide, tantalum nitride, tantalum carbide). Or other materials, or the above 32 1351764

Sanda number: TW3530PA combination), organic materials (such as: photoresist, polyarylene ether (* PAE), polyfluorenes, polyesters, polyalcohols, polyolefins, benzocyclobutene ( Benzcyclylbutene; BCB), HSQ (hydrogen silsesquioxane), MSQ (methyl silesquioxane), Shihe oxygen hydrocarbon (SiOC-H), or other materials, or a combination thereof, or a combination thereof. The halogen structure disclosed in the above embodiment of the present invention has at least one storage capacitor between the conductive materials. In the above embodiments, the application of the conductive material includes a light transmitting material, a reflective material, or a combination thereof. For example, since the fourth conductive layers 444 and 744 in the embodiment are made of a light-transmitting material, the halogen structures 400 and 700 can maintain the original capacitance value and further increase the aperture ratio. In addition, the arrangement of the fourth conductive layers 444, 744 can be selectively overlapped with any gate lines or data lines, so that the arrangement of the fourth conductive layers 444, 744 can reduce the gates in addition to the above advantages. The load on the line or data line, but not limited to this, may also be partially partially overlapped. Furthermore, since the first and second conductive layers of the first, second, fourth and fifth embodiments are a common-potential resistor', that is, a parallel design, and the first and second of the third and sixth embodiments And the fourth conductive layer is also designed in parallel, so the application of these embodiments can reduce the load impedance of the electrode lines. In this way, it is possible to avoid the occurrence of crosstalk when the display panel in the photovoltaic device displays the surface. In addition, the electrode line having the level described in the above embodiment of the present invention is a common electrode line (Vc〇m) having a common level, but is not limited thereto, and may have a variable level. Electrode wire or its level of electricity 33

Sanda number · TW3530PA pole line (such as: gate level, or other standard 12th picture is the photoelectric of the present invention) is an inconspicuous use of the device described in the above embodiment. The optoelectronic device 800 further has a display surface structure 2〇0~7〇0. Photoelectric device lion components, operating components, processing components ^ electronic 7 ° 82 () 'such as: control components, illuminating components, _ components, 70 people, memory components, drive ~ m + pieces, sensing components, detection The component, the component, or a combination of the above. Dry times, portable products (such as mobile phones, cameras, set: 00, types include theater, watches, music players, electronic phase: machine 4 computers, games similar products), screen, TV,: soil, sound Projector or ^. Indoor or outdoor billboard, projector panel 4 ° Another 'display panel WO contains liquid crystal display panel (eg: transmissive panel 'semi-transparent panel, reflective panel, double-sided display panel , Vertical Alignment Panel (VA), Horizontal Switching Panel (lps), Multi-domain Vertical Alignment Panel (MVA) 'Twisted Nematic Panel (TN), Super Twisted Nematic Panel (STN), Pattern Vertical Alignment Panel (pVA), super pattern vertical alignment panel (S-PVA), advanced large viewing angle panel (ASV), edge electric field switching panel (FFS), continuous flame-like array panel (CPA), axisymmetric array of cells Panel (ASM), optically compensated curved alignment panel (〇CB), super horizontal switching panel (S-IPS), advanced super horizontal switching panel (AS-IPS), extreme edge electric field switching panel (UFFS), high Molecularly Stabilized Alignment Panel (PSA), Double Viewing Panel ( Dual-view), triple-view, or color filter integrated into a matrix (c〇l〇r fiiter on array; COA) type panel, or matrix integrated on a color filter 34 1351764

Sanda number: TW3530PA (array on color filter; AOC) type panel, or other type of panel, 'or a combination of the above. ), an organic electroluminescent display panel, depending on the material of the panel, such as a liquid crystal layer or an organic light-emitting layer (eg, a small molecule, a polymer, or Combination of the above), or a combination of the above. In the above, the present invention has been disclosed in the above preferred embodiments, but it is not intended to limit the present invention. A person skilled in the art can make various changes and refinements without departing from the spirit and scope of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims.

35 1351764

Sanda number: TW3530PA [Simple description of the diagram] Figure 1 shows a cross-sectional view of a conventional halogen structure. The figure is a cross-sectional view showing the μ-primary structure on the pixel structure of the first embodiment of the present invention. . The flow of the formation method of the halogen structure of the second image of the second embodiment: a cross-sectional view of the other-formal structure of the embodiment. In the drawings, the pixel structure of the second embodiment of the present invention is not shown. Fig. 5 is a cross-sectional view showing the pixel structure of Fig. 5A. f G shows the flow of the formation method of the fifth core structure. Fig. 7A is a cross-sectional view showing the pixel structure of Fig. 7A on the basis of the pixel structure of the third embodiment of the present invention. . The figure shows a flow of a method for forming a halogen structure of the first embodiment. Fig. 9 is a cross-sectional view showing another structure of the halogen structure of the third embodiment. 10A is a cross-sectional view of a halogen structure which is not in the fourth embodiment of the present invention. Flow chart. ~_(4) Forming method of the structure of the elementary structure of the second figure Intention Plane Intent Plan Intention Plan Diagram Schematic 36 1351764

Sanda Number: TW3530PA Figure 12 shows a schematic view of the photovoltaic device of the present invention. [Description of main component symbols] 100, 200, 300, 400, 500, 600, 700: Alizarin structure 101: Capacitance electrodes 102, 280, 380, 480, 580, 680, 780: Protective layer 10 3 · Alizarin electrode 109 , 209, 409, 509, 709: substrate

112, 212, 412, 512, 712: drains 114, 214, 414, 514, 714: sources 116, 216, 416, 516, 716: gates 120, 220, 420, 520, 620, 720: semiconductor layer 150, 250, 450, 550, 650, 750: insulating layers 162, 231a, 231b, 282, 292, 431a, 431b, 482, 492, 531a, 531b, 582, 592, 692, 731a, 731b, 782, 792: Opening 163: contact holes 190, 290, 390, 490, 590, 690, 790: inner dielectric layers 222, 422, 522, 722: intrinsic regions 224a, 224b, 424a, 424b, 524a, 524b, 624a, 724a, 724b: doped regions 241, 341, 441, 541, 641, 741: first conductive layers 242, 342, 442, 542, 642, 742: second conductive layers 243, 343, 443, 543, 643, 743: Three conductive layers 37 1351764 -

Sanda number: TW3530PA 444, 744: fourth conductive layer * 800: photoelectric device: 810: display panel '820: electronic components

Csl : storage capacitors CS21, CS3i, CS4i, CS51, CS61, CS71: first storage capacitors CS52, CS62, CS72: second storage capacitors CS53, CS63, CS73: third storage capacitors • DT2, DT4 DT42, DT5, DT7 DT72: data line SC2, SC4, SC5, SC7: scan line Vc〇m2, V"com4, Vcom7.

Claims (1)

100 years August ± 5 · day correction replacement page ten, the scope of application patent: L a pixel structure, comprising: at least one transistor; electrically connected to the transistor; - first storage capacitor - first conductive layer; The inner dielectric layer covers the first opening; the first conductive layer has a second electrical layer formed on the inner dielectric layer, and is thinned by the child-opening electrical Connecting to the first conductive layer; and, the work is performed on the transistor W: the conductive layer, and the third conductive layer forming portion is electrically connected to the transistor; and - a fourth conductive layer 'overlying the second electrically conductive layer, such that the crucible is damaging the inner via, the μ Γ capacitance from the third conductive layer, the protection « Λ fourth conductive layer and The second conductive layer is formed. 2. The pixel structure as claimed in claim 4, wherein at least one of the first conductive layer and the third conductive layer comprises a transom, a reflective material, or a combination thereof. . 3. The halogen structure according to claim 2, further comprising a semiconductor layer; and an insulating layer covering the semiconductor layer, and having at least two second portions of the semiconductor layer as the at least-electric The semiconductor layer of the body 2 is located below the second conductive layer. 39 1351764 8 8 8 〆 〆 修正 修正 修正 修正 修正 修正 修正 修正 修正 修正 修正 修正 修正 修正 修正 修正 修正 修正 修正 修正 修正 修正 修正 修正 修正 修正 修正 修正 修正 修正 修正 修正 画 画 画 画 画 画 画 画 画 画 画 画The pixel structure described in item 4 of the garden further includes: the inner layer is formed by the first layer, the conductive layer, the fourth conductive layer, the Μ θ θ, the 5 hp palladium edge layer, and the portion The semiconductor layer is composed of. The bulk structure of the invention is claimed in claim 3, wherein the semiconductor has at least one doped region, at least one intrinsic region, or a combination thereof. The syllabic structure is as described in claim 1, wherein the electric layer, the second conductive layer and the fourth conductive layer are the same. Only the halogen structure as described in claim 1 of the patent application, wherein the 'position quasi-electrical layer, the second conductive layer and the fourth conductive layer are in a level including the flute 9: claim patent (4) The germanium structure is such that the area of the first conductive layer is substantially larger than the area of the second conductive layer. Talk about the flute-casting as a towel. Please refer to the elementary structure described in the first paragraph of the patent, in which the material of the conductive layer contains a reflective material. The pixel structure as described in claim 1, wherein the electrical layer is connected to a common electrode line. 2·& as claimed in claim 1 of the patent structure, further comprising: 1 rf material line, electrically connected to one of the source of the transistor and a faint one, and one; A scan line is electrically connected to one of the gates of the transistor. 13. A display panel, a plurality of pixel structures. The revised replacement page of August 49, 100 includes a display panel as described in claim 13 of the invention. 15. Forming a pixel structure to form a transistor and a first storage capacitor, the method comprising: the method, the pixel structure having at least electrically connected to the transistor, the shape forming a first conductive layer; An inner dielectric layer on the first conductive layer and having a first inner dielectric layer and electrically connected to the first conductive layer via the first opening; a protective layer on the transistor and And the second conductive layer is electrically connected to the transistor on the portion of the protective layer; and, The second conductive layer and a portion of the inner layer are interposed, and the H ^ a smear is composed of the second conductive layer, the protective layer 6 and the second conductive layer, and the second conductive layer is as defined in claim 15 The method for forming the method includes: a material of the first conductive layer and the third conductive layer, a reflective material, or a combination thereof; the material of the material includes: 17. The escape of the 15th item of the patent application scope The formation method, more package vx 丨 August 00 to the date correction replacement page to form a half guide a layer; and an opening covering a ride on the semi-conductive layer, and having at least two third 1δ. The method of the 17th item of the patent application further includes a method of storing a capacitor, the layer and the portion The semiconductor layer is composed of. By a conductive layer, the insulating 19. The 18th structure of the patent application further comprises a third storage capacitor, by the method, the dielectric f, the insulating layer and a portion of the layer, the inner conductor layer, The method of forming at least the item of the cuddle is included. Gamma region, at least one intrinsic region, or a group as described above 21. The first conductive layer, the second conductive sound, and the fourth: the method of forming the same as in the claim patent range, wherein the above is the same. The method of forming the fourth conductive layer of the second layer of the conductive layer and the fourth conductive layer of the sixth layer, wherein the common layer, the second conductive layer and the fourth conductive layer are included < 23. The area of the first conductive layer as described in claim 15 is substantially larger than the first: conductive electric: wherein the fourth electric: the forming party described in item 15 of the patent application scope :: Medium: The material of the conductive layer contains the reflective material. The method of forming the method of claim 15, wherein the μ conductive layer is connected to a common electrode line. 8 42 100 August August Long Day Correction Replacement Page 100 August August Long Day Correction Replacement Page contains; if the application method described in Item 15 of the patent is more than a jl, the material line is electrically connected to the The transistor has a source and a T; and a: scan line electrically connected to one of the gates of the transistor. The first! The method for forming the panel of the five items includes a method for forming a ruthenium structure such as a patent application scope. The method for forming a photovoltaic device according to the 2721th embodiment includes a method of forming a display panel as claimed in the patent application. ^ 29 The structure of the halogen as described in claim 1, wherein the material of the four conductive layers comprises a light transmissive material. /, 中中 3〇道, as described in the application method of the full-time enclosure, wherein the material of the fourth conductive layer comprises a light-transmitting material. " 43