KR910013568A - 화합물 반도체 장치 및 그 제조방법 - Google Patents

화합물 반도체 장치 및 그 제조방법 Download PDF

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Publication number
KR910013568A
KR910013568A KR1019890020733A KR890020733A KR910013568A KR 910013568 A KR910013568 A KR 910013568A KR 1019890020733 A KR1019890020733 A KR 1019890020733A KR 890020733 A KR890020733 A KR 890020733A KR 910013568 A KR910013568 A KR 910013568A
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South Korea
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layer
compound semiconductor
source
semiconductor device
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KR1019890020733A
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English (en)
Inventor
남춘우
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김광호
삼성전자 주식회사
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Priority to KR1019890020733A priority Critical patent/KR910013568A/ko
Priority to FR9003009A priority patent/FR2656740A1/fr
Priority to DE4007896A priority patent/DE4007896A1/de
Priority to GB9005732A priority patent/GB2239557A/en
Priority to JP2066749A priority patent/JPH03211839A/ja
Publication of KR910013568A publication Critical patent/KR910013568A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66431—Unipolar field-effect transistors with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0891—Source or drain regions of field-effect devices of field-effect transistors with Schottky gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
    • H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Peptides Or Proteins (AREA)

Abstract

내용 없음.

Description

화합물 반도체 장치 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도는 본 발명에 따른 갈륨비소 고전자 이동 트랜지스터의 단면도,
제4(A)∼(B)도는 제3도의 갈륨비소 고전자 이동 트랜지스터의 제조공정을 나타내는 단면도들.

Claims (5)

  1. 화합물 반도체 기판, 상기 기판상에 성장된 버퍼층, 스페이서층 및 소오스층, 상기 소오스층 상에 형성된 게이트 전극, 상기 버퍼층 상에 형성되어 소오스 및 드레인 전극을 상기 스페이서층에 연결하는 캡층을 구비한 화합물 반도체 장치에 있어서, 상기 소오스층과 스페이서층이 메사 구조로 형성됨을 특징으로 하는 화합물 반도체 장치.
  2. 제l항에 있어서, 상기 캡층이 2차원 전자 가스와 접촉함을 특징으로 하는 화합믈 반도체 장치.
  3. 화합물 반도체 기판, 소오스 및 드레인 전극과 게이트 전극을 구비한 화합물 반도체 장치의 제조방법에 있어서, 상기 화합물 반도체 기판 상에 버퍼층을 형성하는 공정과, 상기 버퍼층상의 게이트 전극 영역에 스페이서층과 소오스층을 형성하는 공정과, 상기 버퍼층의 상에 캡층을 형성하는 공정으로 이루어짐을 특징으로 하는 화합물 반도체 장치의 제조방법.
  4. 제3항에 있어서, 상기 스페이서층 및 소오스층은 결장 성정 후 식각하여 메사구조로 형성함을 특징으로 하는 화합물 반도체 장치의 제조방법.
  5. 제4항에 있어서, 상기 스페이서층 및 소오스층 형성시 버퍼층이 소정 두께 식각되어짐을 특징으로 하는 화합물 반도체 장치의 제조방법.
    ※ 참고사항 : 최초출된 내용에 의하여 공개하는 것임.
KR1019890020733A 1989-12-31 1989-12-31 화합물 반도체 장치 및 그 제조방법 KR910013568A (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1019890020733A KR910013568A (ko) 1989-12-31 1989-12-31 화합물 반도체 장치 및 그 제조방법
FR9003009A FR2656740A1 (fr) 1989-12-31 1990-03-09 Semi-conducteur a jonction comportant un structure a heterojonction.
DE4007896A DE4007896A1 (de) 1989-12-31 1990-03-13 Verbindungshalbleiter-bauelement und verfahren zur herstellung eines derartigen bauelementes
GB9005732A GB2239557A (en) 1989-12-31 1990-03-14 High electron mobility transistors
JP2066749A JPH03211839A (ja) 1989-12-31 1990-03-15 化合物半導体装置及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019890020733A KR910013568A (ko) 1989-12-31 1989-12-31 화합물 반도체 장치 및 그 제조방법

Publications (1)

Publication Number Publication Date
KR910013568A true KR910013568A (ko) 1991-08-08

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Application Number Title Priority Date Filing Date
KR1019890020733A KR910013568A (ko) 1989-12-31 1989-12-31 화합물 반도체 장치 및 그 제조방법

Country Status (5)

Country Link
JP (1) JPH03211839A (ko)
KR (1) KR910013568A (ko)
DE (1) DE4007896A1 (ko)
FR (1) FR2656740A1 (ko)
GB (1) GB2239557A (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0444328A (ja) * 1990-06-11 1992-02-14 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP5609055B2 (ja) * 2009-10-02 2014-10-22 富士通株式会社 化合物半導体装置及びその製造方法
JP6690320B2 (ja) * 2016-03-11 2020-04-28 住友電気工業株式会社 高電子移動度トランジスタ、及び高電子移動度トランジスタの製造方法
US11515410B2 (en) * 2020-10-30 2022-11-29 Raytheon Company Group III-V semiconductor structures having crystalline regrowth layers and methods for forming such structures

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4663643A (en) * 1981-04-23 1987-05-05 Fujitsu Limited Semiconductor device and process for producing the same
JPS60189268A (ja) * 1984-03-08 1985-09-26 Fujitsu Ltd 半導体装置
NL8500218A (nl) * 1985-01-28 1986-08-18 Philips Nv Halfgeleiderinrichting met tweedimensionaal ladingsdragergas.
JPS62204578A (ja) * 1986-03-04 1987-09-09 Nec Corp 電界効果トランジスタの製造方法
JPS62209865A (ja) * 1986-03-10 1987-09-16 Nec Corp 半導体装置の製造方法
JPS62232170A (ja) * 1986-04-02 1987-10-12 Matsushita Electric Ind Co Ltd 電界効果トランジスタの製造方法
JPS63308965A (ja) * 1987-06-11 1988-12-16 Toshiba Corp ヘテロ接合電界効果トランジスタ
JP2559412B2 (ja) * 1987-06-22 1996-12-04 株式会社日立製作所 半導体装置
JP2541228B2 (ja) * 1987-07-31 1996-10-09 ソニー株式会社 高電子移動度トランジスタ

Also Published As

Publication number Publication date
JPH03211839A (ja) 1991-09-17
FR2656740A1 (fr) 1991-07-05
GB9005732D0 (en) 1990-05-09
GB2239557A (en) 1991-07-03
DE4007896A1 (de) 1991-07-11

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