KR920005385A - 반도체장치 - Google Patents

반도체장치 Download PDF

Info

Publication number
KR920005385A
KR920005385A KR1019910015132A KR910015132A KR920005385A KR 920005385 A KR920005385 A KR 920005385A KR 1019910015132 A KR1019910015132 A KR 1019910015132A KR 910015132 A KR910015132 A KR 910015132A KR 920005385 A KR920005385 A KR 920005385A
Authority
KR
South Korea
Prior art keywords
semiconductor device
inp
heterojunction
base
electron supply
Prior art date
Application number
KR1019910015132A
Other languages
English (en)
Other versions
KR950007350B1 (ko
Inventor
시게루 나까지마
Original Assignee
나까하라 쯔네오
스미도모덴기 고오교오 가부시기가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2228830A external-priority patent/JPH04109631A/ja
Priority claimed from JP2228831A external-priority patent/JPH04109632A/ja
Priority claimed from JP2228832A external-priority patent/JPH04109633A/ja
Application filed by 나까하라 쯔네오, 스미도모덴기 고오교오 가부시기가이샤 filed Critical 나까하라 쯔네오
Publication of KR920005385A publication Critical patent/KR920005385A/ko
Application granted granted Critical
Publication of KR950007350B1 publication Critical patent/KR950007350B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
    • H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
    • H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)

Abstract

내용 없음

Description

반도체장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명의 제1실시예에 의한 HEMT의 구조를 도시한 단면도.

Claims (15)

  1. 조성비(x)가 0.65-0.85 (AℓAs)×(InSb)1-x와 InP와의 헤테로접합을 구비하여 형성된 반도체장치.
  2. 제1항에 있어서, 상기 반도체장치는 고전자동단 트랜지스터인 것을 특징으로 하는 반도체장치.
  3. 제2항에 있어서, InP반도체기판과, 상기 InP반도체기판상에 형성된 버퍼층과, InP로 이루어져 있으며 상기 버퍼층상에 형성된 채널층과, (AℓAs)×(InSb)1-x로 이루어져 있으며 상기 버퍼층과 함께 제1항에 따른 상기 헤테로접합을 형성하기 위한 전자공급층과, 상기 전자공급층상에 형성된 게이트전극 및 한쌍의 저항전극으로 구성된 것을 특징으로 하는 반도체장치.
  4. 제1항에 있어서, 상기 반도체장치는 헤테로접합형 쌍극성 트랜지스터인 것을 특징으로 하는 반도체장치.
  5. 제4항에 있어서, InP로 이루어진 콜렉터와, InP로 이루어진 베이스와, (AℓAs)×(InSb)1-x로 이루어져 있으며 상기 베이스와 함께 제1항에 따른 상기 헤테로접합을 형성하기 위한 이미터로 구성된 것을 특징으로 하는 반도체장치.
  6. 조성비(x)가 0.4-0.6 (AℓAs)×(GaSb)1-x와 InP와의 헤테로접합을 구비하여 형성된 반도체장치.
  7. 제6항에 있어서, 상기 반도체장치는 고전자이동도트랜지스터인 것을 특징으로 하는 반도체장치.
  8. 제7항에 있어서, InP반도체기판과, 상기 InP반도체기판상에 형성된 버퍼층과, InP로 이루어져 있으며상기 버퍼층상에 형성된 채널층과, (AℓAs)×(GaSb)1-x로 이루어져 있으며 상기 버퍼층과 함께 제6항에 따른 상기 헤테로접합을 형성하기 위한 전자공급층과, 상기 전자공급층상에 형성된 게이트전극 및 한쌍의 저항전극으로 구성된 것을 특징으로 하는 반도체장치.
  9. 제6항에 있어서, 상기 반도체장치는 헤테로접합형 쌍극성 트랜지스터인 것을 특징으로 하는 반도체장치.
  10. 제9항에 있어서, InP로 이루어진 콜렉터와, InP로 이루어진 베이스와, (AℓAs)×(GaSb)1-x로 이루어져 있으며 상기 베이스와 함께 제6항에 따른 상기 헤테로접합을 형성하기 위한 이미터로 구성된 것을 특징으로 하는 반도체장치.
  11. 조성비(x)가 0.4-0.6 GaAsxSb1-x와 InP와의 헤테로접합을 구비하여 형성된 반도체장치.
  12. 제11항에 있어서, 상기 반도체장치는 고전자이동도트랜지스터인 것을 특징으로 하는 반도체장치.
  13. 제12항에 있어서, InP반도체기판과, 상기 InP반도체기판상에 형성된 버퍼층과, InP로 이루어져 있으며 상기 버퍼층상에 형성된 채널층과, GaAsxSb1-x로 이루어져 있으며 상기 버퍼층과 함께 제11항에 따른 상기 헤테로접합을 형성하기 위한 전자공급층과, 상기 전자공급층상에 형성된 게이트전극 및 한쌍의 저항전극으로 구성된 것을 특징으로 하는 반도체장치.
  14. 제11항에 있어서, 상기 반도체장치는 헤테로접합형 쌍극성 트랜지스터인 것을 특징으로 하는 반도체장치.
  15. 제14항에 있어서, InP로 이루어진 콜렉터와, InP로 이루어진 베이스와, GaAsxSb1-x로 이루어져 있으며 상기 베이스와 함께 제11항에 따른 상기 헤테로접합을 형성하기 위한 이미터로 구성된 것을 특징으로 하는 반도체장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910015132A 1990-08-30 1991-08-30 반도체장치 KR950007350B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2228830A JPH04109631A (ja) 1990-08-30 1990-08-30 半導体装置
JP90-228830 1990-08-30
JP2228831A JPH04109632A (ja) 1990-08-30 1990-08-30 半導体装置
JP2228832A JPH04109633A (ja) 1990-08-30 1990-08-30 半導体装置
JP90-228832 1990-08-30
JP90-228831 1990-08-30

Publications (2)

Publication Number Publication Date
KR920005385A true KR920005385A (ko) 1992-03-28
KR950007350B1 KR950007350B1 (ko) 1995-07-10

Family

ID=27331440

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910015132A KR950007350B1 (ko) 1990-08-30 1991-08-30 반도체장치

Country Status (4)

Country Link
US (1) US5164800A (ko)
EP (1) EP0477580A3 (ko)
KR (1) KR950007350B1 (ko)
CA (1) CA2050245A1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100707325B1 (ko) * 1999-05-06 2007-04-13 소니 가부시끼 가이샤 헤테로 접합 전계 효과 트랜지스터 및 그 제조방법

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3046098B2 (ja) * 1991-07-03 2000-05-29 富士通株式会社 ヘテロ接合半導体装置
US5603765A (en) * 1993-12-01 1997-02-18 Hughes Aircraft Company Method of growing high breakdown voltage allnas layers in InP devices by low temperature molecular beam epitaxy
US5610086A (en) * 1995-06-06 1997-03-11 Hughes Aircraft Company Method of making an AlPSb/InP single heterojunction bipolar transistor on InP substrate for high-speed, high-power applications
WO2000079600A1 (en) * 1999-06-22 2000-12-28 Hrl Laboratories, Llc SINGLE HETEROJUNCTION InP-COLLECTOR BJT DEVICE AND METHOD
US6670653B1 (en) * 1999-07-30 2003-12-30 Hrl Laboratories, Llc InP collector InGaAsSb base DHBT device and method of forming same
US6521961B1 (en) * 2000-04-28 2003-02-18 Motorola, Inc. Semiconductor device using a barrier layer between the gate electrode and substrate and method therefor
US9530708B1 (en) 2013-05-31 2016-12-27 Hrl Laboratories, Llc Flexible electronic circuit and method for manufacturing same

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4213781A (en) * 1978-11-20 1980-07-22 Westinghouse Electric Corp. Deposition of solid semiconductor compositions and novel semiconductor materials
JPS58188165A (ja) * 1982-04-28 1983-11-02 Nec Corp 半導体装置
JPH0750714B2 (ja) * 1984-01-30 1995-05-31 日本電気株式会社 バイポーラトランジスタ
JPS60219778A (ja) * 1984-04-16 1985-11-02 Nec Corp 半導体受光装置
JPH0654786B2 (ja) * 1984-12-27 1994-07-20 住友電気工業株式会社 ヘテロ接合半導体デバイス
US4922324A (en) * 1987-01-20 1990-05-01 Kabushiki Kaisha Toshiba Semiconductor integrated circuit device
FR2621174B1 (fr) * 1987-09-25 1991-06-14 Thomson Hybrides Microondes Capacite integree dans un circuit hyperfrequence
US4821082A (en) * 1987-10-30 1989-04-11 International Business Machines Corporation Heterojunction bipolar transistor with substantially aligned energy levels
US5048036A (en) * 1989-09-18 1991-09-10 Spectra Diode Laboratories, Inc. Heterostructure laser with lattice mismatch

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100707325B1 (ko) * 1999-05-06 2007-04-13 소니 가부시끼 가이샤 헤테로 접합 전계 효과 트랜지스터 및 그 제조방법

Also Published As

Publication number Publication date
KR950007350B1 (ko) 1995-07-10
EP0477580A2 (en) 1992-04-01
US5164800A (en) 1992-11-17
EP0477580A3 (en) 1992-08-05
CA2050245A1 (en) 1992-03-01

Similar Documents

Publication Publication Date Title
KR850005154A (ko) 화합물 반도체 집적회로 장치
SE9900008D0 (sv) Halvledaranordning och sätt att tillverka densamma
KR920018968A (ko) 다층 베이스 헤테로접합 장치 및 그 제조방법
JP3321189B2 (ja) 電力用半導体素子
KR940008140A (ko) 터널 저항을 저감한 반도체 장치 및 그것을 사용한 회로
JPH043981A (ja) 伝導度変調型ｍｏｓｆｅｔ
GB2331841A (en) Field effect transistor
JPH0691263B2 (ja) 半導体装置の製造方法
KR930003371A (ko) 바이폴러 및 mos 트랜지스터가 통합된 반도체 디바이스와 그 제조방법
KR940022887A (ko) 절연게이트형 바이폴라 트랜지스터
KR920005385A (ko) 반도체장치
KR930001493A (ko) 바이폴라 트랜지스터용 다층 콜렉터 구조물 및 그 제조방법
KR900005623A (ko) 제어 가능 파워 반도체 소자
KR940016782A (ko) 반도체 장치
JPH0560263B2 (ko)
KR890017793A (ko) 반도체 장치
JPS60160166A (ja) ヘテロ接合コレクタを有するバイポ−ラトランジスタ
KR970054488A (ko) 헤테로 접합 바이폴라 트랜지스터
DE3781285D1 (de) Bipolarer heterouebergangstransistor mit einem basisbereich aus germanium.
KR910013568A (ko) 화합물 반도체 장치 및 그 제조방법
KR890003045A (ko) 고전자이동도 트랜지스터
KR940022888A (ko) 반도체장치
JP2576173B2 (ja) 絶縁ゲート型半導体装置
Tabatabaie-Alavi et al. Gate delays of InGaAs/InP heterojunction integrated injection logic
KR920704359A (ko) 고속 턴온 스위칭용 scr 구조

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
LAPS Lapse due to unpaid annual fee