KR920005385A - 반도체장치 - Google Patents
반도체장치 Download PDFInfo
- Publication number
- KR920005385A KR920005385A KR1019910015132A KR910015132A KR920005385A KR 920005385 A KR920005385 A KR 920005385A KR 1019910015132 A KR1019910015132 A KR 1019910015132A KR 910015132 A KR910015132 A KR 910015132A KR 920005385 A KR920005385 A KR 920005385A
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor device
- inp
- heterojunction
- base
- electron supply
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims 30
- 239000000758 substrate Substances 0.000 claims 6
- 229910005542 GaSb Inorganic materials 0.000 claims 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 3
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims 3
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
- H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
- H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
- H01L29/7371—Vertical transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
- Bipolar Transistors (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명의 제1실시예에 의한 HEMT의 구조를 도시한 단면도.
Claims (15)
- 조성비(x)가 0.65-0.85 (AℓAs)×(InSb)1-x와 InP와의 헤테로접합을 구비하여 형성된 반도체장치.
- 제1항에 있어서, 상기 반도체장치는 고전자동단 트랜지스터인 것을 특징으로 하는 반도체장치.
- 제2항에 있어서, InP반도체기판과, 상기 InP반도체기판상에 형성된 버퍼층과, InP로 이루어져 있으며 상기 버퍼층상에 형성된 채널층과, (AℓAs)×(InSb)1-x로 이루어져 있으며 상기 버퍼층과 함께 제1항에 따른 상기 헤테로접합을 형성하기 위한 전자공급층과, 상기 전자공급층상에 형성된 게이트전극 및 한쌍의 저항전극으로 구성된 것을 특징으로 하는 반도체장치.
- 제1항에 있어서, 상기 반도체장치는 헤테로접합형 쌍극성 트랜지스터인 것을 특징으로 하는 반도체장치.
- 제4항에 있어서, InP로 이루어진 콜렉터와, InP로 이루어진 베이스와, (AℓAs)×(InSb)1-x로 이루어져 있으며 상기 베이스와 함께 제1항에 따른 상기 헤테로접합을 형성하기 위한 이미터로 구성된 것을 특징으로 하는 반도체장치.
- 조성비(x)가 0.4-0.6 (AℓAs)×(GaSb)1-x와 InP와의 헤테로접합을 구비하여 형성된 반도체장치.
- 제6항에 있어서, 상기 반도체장치는 고전자이동도트랜지스터인 것을 특징으로 하는 반도체장치.
- 제7항에 있어서, InP반도체기판과, 상기 InP반도체기판상에 형성된 버퍼층과, InP로 이루어져 있으며상기 버퍼층상에 형성된 채널층과, (AℓAs)×(GaSb)1-x로 이루어져 있으며 상기 버퍼층과 함께 제6항에 따른 상기 헤테로접합을 형성하기 위한 전자공급층과, 상기 전자공급층상에 형성된 게이트전극 및 한쌍의 저항전극으로 구성된 것을 특징으로 하는 반도체장치.
- 제6항에 있어서, 상기 반도체장치는 헤테로접합형 쌍극성 트랜지스터인 것을 특징으로 하는 반도체장치.
- 제9항에 있어서, InP로 이루어진 콜렉터와, InP로 이루어진 베이스와, (AℓAs)×(GaSb)1-x로 이루어져 있으며 상기 베이스와 함께 제6항에 따른 상기 헤테로접합을 형성하기 위한 이미터로 구성된 것을 특징으로 하는 반도체장치.
- 조성비(x)가 0.4-0.6 GaAsxSb1-x와 InP와의 헤테로접합을 구비하여 형성된 반도체장치.
- 제11항에 있어서, 상기 반도체장치는 고전자이동도트랜지스터인 것을 특징으로 하는 반도체장치.
- 제12항에 있어서, InP반도체기판과, 상기 InP반도체기판상에 형성된 버퍼층과, InP로 이루어져 있으며 상기 버퍼층상에 형성된 채널층과, GaAsxSb1-x로 이루어져 있으며 상기 버퍼층과 함께 제11항에 따른 상기 헤테로접합을 형성하기 위한 전자공급층과, 상기 전자공급층상에 형성된 게이트전극 및 한쌍의 저항전극으로 구성된 것을 특징으로 하는 반도체장치.
- 제11항에 있어서, 상기 반도체장치는 헤테로접합형 쌍극성 트랜지스터인 것을 특징으로 하는 반도체장치.
- 제14항에 있어서, InP로 이루어진 콜렉터와, InP로 이루어진 베이스와, GaAsxSb1-x로 이루어져 있으며 상기 베이스와 함께 제11항에 따른 상기 헤테로접합을 형성하기 위한 이미터로 구성된 것을 특징으로 하는 반도체장치.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2228832A JPH04109633A (ja) | 1990-08-30 | 1990-08-30 | 半導体装置 |
JP90-228831 | 1990-08-30 | ||
JP90-228832 | 1990-08-30 | ||
JP90-228830 | 1990-08-30 | ||
JP2228830A JPH04109631A (ja) | 1990-08-30 | 1990-08-30 | 半導体装置 |
JP2228831A JPH04109632A (ja) | 1990-08-30 | 1990-08-30 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR920005385A true KR920005385A (ko) | 1992-03-28 |
KR950007350B1 KR950007350B1 (ko) | 1995-07-10 |
Family
ID=27331440
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019910015132A KR950007350B1 (ko) | 1990-08-30 | 1991-08-30 | 반도체장치 |
Country Status (4)
Country | Link |
---|---|
US (1) | US5164800A (ko) |
EP (1) | EP0477580A3 (ko) |
KR (1) | KR950007350B1 (ko) |
CA (1) | CA2050245A1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100707325B1 (ko) * | 1999-05-06 | 2007-04-13 | 소니 가부시끼 가이샤 | 헤테로 접합 전계 효과 트랜지스터 및 그 제조방법 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3046098B2 (ja) * | 1991-07-03 | 2000-05-29 | 富士通株式会社 | ヘテロ接合半導体装置 |
US5603765A (en) * | 1993-12-01 | 1997-02-18 | Hughes Aircraft Company | Method of growing high breakdown voltage allnas layers in InP devices by low temperature molecular beam epitaxy |
US5610086A (en) * | 1995-06-06 | 1997-03-11 | Hughes Aircraft Company | Method of making an AlPSb/InP single heterojunction bipolar transistor on InP substrate for high-speed, high-power applications |
WO2000079600A1 (en) * | 1999-06-22 | 2000-12-28 | Hrl Laboratories, Llc | SINGLE HETEROJUNCTION InP-COLLECTOR BJT DEVICE AND METHOD |
US6670653B1 (en) * | 1999-07-30 | 2003-12-30 | Hrl Laboratories, Llc | InP collector InGaAsSb base DHBT device and method of forming same |
US6521961B1 (en) * | 2000-04-28 | 2003-02-18 | Motorola, Inc. | Semiconductor device using a barrier layer between the gate electrode and substrate and method therefor |
US9530708B1 (en) | 2013-05-31 | 2016-12-27 | Hrl Laboratories, Llc | Flexible electronic circuit and method for manufacturing same |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4213781A (en) * | 1978-11-20 | 1980-07-22 | Westinghouse Electric Corp. | Deposition of solid semiconductor compositions and novel semiconductor materials |
JPS58188165A (ja) * | 1982-04-28 | 1983-11-02 | Nec Corp | 半導体装置 |
JPH0750714B2 (ja) * | 1984-01-30 | 1995-05-31 | 日本電気株式会社 | バイポーラトランジスタ |
JPS60219778A (ja) * | 1984-04-16 | 1985-11-02 | Nec Corp | 半導体受光装置 |
JPH0654786B2 (ja) * | 1984-12-27 | 1994-07-20 | 住友電気工業株式会社 | ヘテロ接合半導体デバイス |
US4922324A (en) * | 1987-01-20 | 1990-05-01 | Kabushiki Kaisha Toshiba | Semiconductor integrated circuit device |
FR2621174B1 (fr) * | 1987-09-25 | 1991-06-14 | Thomson Hybrides Microondes | Capacite integree dans un circuit hyperfrequence |
US4821082A (en) * | 1987-10-30 | 1989-04-11 | International Business Machines Corporation | Heterojunction bipolar transistor with substantially aligned energy levels |
US5048036A (en) * | 1989-09-18 | 1991-09-10 | Spectra Diode Laboratories, Inc. | Heterostructure laser with lattice mismatch |
-
1991
- 1991-08-23 US US07/748,946 patent/US5164800A/en not_active Expired - Fee Related
- 1991-08-29 EP EP19910114536 patent/EP0477580A3/en not_active Withdrawn
- 1991-08-29 CA CA002050245A patent/CA2050245A1/en not_active Abandoned
- 1991-08-30 KR KR1019910015132A patent/KR950007350B1/ko not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100707325B1 (ko) * | 1999-05-06 | 2007-04-13 | 소니 가부시끼 가이샤 | 헤테로 접합 전계 효과 트랜지스터 및 그 제조방법 |
Also Published As
Publication number | Publication date |
---|---|
EP0477580A2 (en) | 1992-04-01 |
KR950007350B1 (ko) | 1995-07-10 |
US5164800A (en) | 1992-11-17 |
CA2050245A1 (en) | 1992-03-01 |
EP0477580A3 (en) | 1992-08-05 |
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