DE3781285D1 - Bipolarer heterouebergangstransistor mit einem basisbereich aus germanium. - Google Patents

Bipolarer heterouebergangstransistor mit einem basisbereich aus germanium.

Info

Publication number
DE3781285D1
DE3781285D1 DE8787100517T DE3781285T DE3781285D1 DE 3781285 D1 DE3781285 D1 DE 3781285D1 DE 8787100517 T DE8787100517 T DE 8787100517T DE 3781285 T DE3781285 T DE 3781285T DE 3781285 D1 DE3781285 D1 DE 3781285D1
Authority
DE
Germany
Prior art keywords
layer
type
heterou
germanium
bipolar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8787100517T
Other languages
English (en)
Other versions
DE3781285T2 (de
Inventor
Junichi Sone
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE3781285D1 publication Critical patent/DE3781285D1/de
Publication of DE3781285T2 publication Critical patent/DE3781285T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors
    • H01L29/7378—Vertical transistors comprising lattice mismatched active layers, e.g. SiGe strained layer transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
    • H01L29/267—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys in different semiconductor regions, e.g. heterojunctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
DE19873781285 1986-01-17 1987-01-16 Bipolarer heterouebergangstransistor mit einem basisbereich aus germanium. Expired - Fee Related DE3781285T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP858786A JPS62165975A (ja) 1986-01-17 1986-01-17 ヘテロ構造バイポ−ラ・トランジスタ

Publications (2)

Publication Number Publication Date
DE3781285D1 true DE3781285D1 (de) 1992-10-01
DE3781285T2 DE3781285T2 (de) 1993-03-18

Family

ID=11697126

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19873781285 Expired - Fee Related DE3781285T2 (de) 1986-01-17 1987-01-16 Bipolarer heterouebergangstransistor mit einem basisbereich aus germanium.

Country Status (3)

Country Link
EP (1) EP0229672B1 (de)
JP (1) JPS62165975A (de)
DE (1) DE3781285T2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01175256A (ja) * 1987-12-29 1989-07-11 Nec Corp ヘテロ構造バイポーラ・トランジスタおよびその製造方法
EP0390606A3 (de) * 1989-03-31 1991-10-09 Canon Kabushiki Kaisha Halbleitervorrichtung mit einem hinsichtlich des Emittorgebietes und/oder der Basiselektrode verbesserten Transistor
US5089428A (en) * 1989-12-27 1992-02-18 Texas Instruments Incorporated Method for forming a germanium layer and a heterojunction bipolar transistor
JPH05144834A (ja) * 1991-03-20 1993-06-11 Hitachi Ltd バイポーラトランジスタ及びその製造方法
US5352912A (en) * 1991-11-13 1994-10-04 International Business Machines Corporation Graded bandgap single-crystal emitter heterojunction bipolar transistor
RU2507633C1 (ru) * 2012-09-24 2014-02-20 Федеральное Государственное Унитарное Предприятие "Научно-Производственное Предприятие "Пульсар" Биполярный транзистор на основе гетероэпитаксиальных структур и способ его изготовления

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3275906A (en) * 1962-08-20 1966-09-27 Nippon Electric Co Multiple hetero-layer composite semiconductor device

Also Published As

Publication number Publication date
JPH047096B2 (de) 1992-02-07
EP0229672A2 (de) 1987-07-22
EP0229672A3 (en) 1988-01-13
JPS62165975A (ja) 1987-07-22
EP0229672B1 (de) 1992-08-26
DE3781285T2 (de) 1993-03-18

Similar Documents

Publication Publication Date Title
EP0272453A3 (de) Vereinigte bipolare/CMOS Technologie unter Verwendung eines elektrisch aktiven Grabens
DE59712106D1 (de) Silizium-germanium-heterobipolartransistor
KR880001058A (ko) 헤테로 접합형 바이폴러트랜지스터의 제조방법
DE69109890D1 (de) Lateraler Heterogrenzflächen-Bipolartransistor.
DE3781285D1 (de) Bipolarer heterouebergangstransistor mit einem basisbereich aus germanium.
MY104983A (en) Vertical bipolar transistor.
KR920005385A (ko) 반도체장치
EP0138563A3 (de) Lateraler Transistor
JPS6461058A (en) Bipolar transistor and manufacture thereof
JPS57197862A (en) Active semiconductor device and manufacture thereof
EP0231740A3 (de) Selbstjustierendes bipolares Bauelement aus Polysilizium und Verfahren zu seiner Herstellung
KR880013256A (ko) 헤테로접합형 바이폴라트랜지스터 및 그 제조방법
EP0378164A3 (de) Bipolarer Transistor und Verfahren zu dessen Herstellung
JPS55103756A (en) Electrostatic induction transistor integrated circuit
EP0077921A3 (de) Halbleiteranordnung
JPS5615068A (en) Semiconductor device and manufacture thereof
JPS57133670A (en) Structure of lateral transistor
JPS6480064A (en) Semiconductor device
MY110261A (en) Bipolar bump transistor and method of manufacturing the same.
JPS5516541A (en) Reverse-conducting gate turn-off thyristor circuit
JPS6482670A (en) Lateral bipolar transistor
KR880008434A (ko) 양 방향성 핀치 저항
EP0178801A3 (de) Halbleiterbauelement mit virtuellem Basisgebiet
JPS6490581A (en) Optoelectronic integrated circuit and manufacture thereof
DE3665114D1 (en) Bipolar transistor

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee