JPS6480064A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS6480064A JPS6480064A JP23476987A JP23476987A JPS6480064A JP S6480064 A JPS6480064 A JP S6480064A JP 23476987 A JP23476987 A JP 23476987A JP 23476987 A JP23476987 A JP 23476987A JP S6480064 A JPS6480064 A JP S6480064A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- bipolar transistor
- heterojunction bipolar
- load
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 2
- 229920006395 saturated elastomer Polymers 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To make it possible to simply form a high impedance load by a method wherein an FET, having at least a semiconductor layer of a heterojunction bipolar transistor as a channel, is formed and it is used as a saturated resistor. CONSTITUTION:A heterojunction bipolar transistor is composed of an nGaAs layer 3 as a collector, a p<+> GaAs layer 4 as a base layer, an nAlGaAs layer 5 as an emitter, a base electrode 11, an emitter electrode 12 and a collector electrode 13. Also, a p-channel J-DFET is formed for the purpose of formation of a resistance load of said transistor. The J-DFET is composed of the above- mentioned nAlGaAs 5 and the nGaAs 3 as a gate region, and the n<+>GaAs layer 4 as an active layer. The heterojunction bipolar transistor, in which the saturated resistor is used as a load, is used as an inverter circuit, and a high gain can be obtained easily.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23476987A JPS6480064A (en) | 1987-09-21 | 1987-09-21 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23476987A JPS6480064A (en) | 1987-09-21 | 1987-09-21 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6480064A true JPS6480064A (en) | 1989-03-24 |
Family
ID=16976076
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP23476987A Pending JPS6480064A (en) | 1987-09-21 | 1987-09-21 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6480064A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5077231A (en) * | 1991-03-15 | 1991-12-31 | Texas Instruments Incorporated | Method to integrate HBTs and FETs |
-
1987
- 1987-09-21 JP JP23476987A patent/JPS6480064A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5077231A (en) * | 1991-03-15 | 1991-12-31 | Texas Instruments Incorporated | Method to integrate HBTs and FETs |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS54131890A (en) | Semiconductor device | |
ES8301391A1 (en) | High-voltage semiconductor switch. | |
JPS5443551A (en) | Monolithic semiconductor integrated circuit | |
JPS6480064A (en) | Semiconductor device | |
JPS56100461A (en) | Semiconductor ic device | |
JPS6461058A (en) | Bipolar transistor and manufacture thereof | |
EP0113540A3 (en) | Improvements in or relating to semiconductor devices, and methods of making same | |
JPS55103756A (en) | Electrostatic induction transistor integrated circuit | |
JPS6414960A (en) | Semiconductor element | |
JPS6484671A (en) | Semiconductor device | |
JPS645051A (en) | Compound semiconductor integrated circuit device and manufacture thereof | |
JPS5615068A (en) | Semiconductor device and manufacture thereof | |
JPS5261978A (en) | Semiconductor integrated circuit device and its production | |
JPS55113371A (en) | Power transistor | |
SU789019A1 (en) | Semiconductor device | |
JPS56165356A (en) | Mos semiconductor device | |
JPS6451669A (en) | Semiconductor element | |
JPS57196560A (en) | Semiconductor device | |
JPS54113269A (en) | Production of junction-type electronic field effect transistor | |
SE9301704D0 (en) | A LATERAL BIPOLAR TRANSISTOR WITH VARIABLE BASES AND A PROCEDURE FOR CONTROL OF BASES | |
JPS5563868A (en) | Semiconductor integrated circuit | |
JPS5493989A (en) | Semiconductor device | |
JPS5599759A (en) | Semiconductor integrated circuit device | |
JPS556899A (en) | Semiconductor device | |
JPS56126959A (en) | Semiconductor device |