JPS645051A - Compound semiconductor integrated circuit device and manufacture thereof - Google Patents

Compound semiconductor integrated circuit device and manufacture thereof

Info

Publication number
JPS645051A
JPS645051A JP15966687A JP15966687A JPS645051A JP S645051 A JPS645051 A JP S645051A JP 15966687 A JP15966687 A JP 15966687A JP 15966687 A JP15966687 A JP 15966687A JP S645051 A JPS645051 A JP S645051A
Authority
JP
Japan
Prior art keywords
fet
integrated circuit
circuit device
hbt
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15966687A
Other languages
Japanese (ja)
Inventor
Kenji Ishida
Atsushi Kameyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP15966687A priority Critical patent/JPS645051A/en
Publication of JPS645051A publication Critical patent/JPS645051A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To provide an integrated circuit device operable at a high speed with a large logic amplitude, by constituting a logic circuit from a driving hetero-junction-type bipolar transistor. electrically connected to a FET. CONSTITUTION:A basic logic circuit is an inverter in which a load FET 100 is connected to a driving hetero-junction-type bipolar transistor (HBT) 200. The FET 100 having drain and gate electrodes 105, 104 is electrically connected to the HBT having emitter and base electrodes 206, 205 on a source region 101. An output terminal 207 common to the source and the collector is provided on a source region 208 extended from the region 101. Further, the HBT is provided on the FET 100 so as to decrease the area.
JP15966687A 1987-06-29 1987-06-29 Compound semiconductor integrated circuit device and manufacture thereof Pending JPS645051A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15966687A JPS645051A (en) 1987-06-29 1987-06-29 Compound semiconductor integrated circuit device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15966687A JPS645051A (en) 1987-06-29 1987-06-29 Compound semiconductor integrated circuit device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS645051A true JPS645051A (en) 1989-01-10

Family

ID=15698687

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15966687A Pending JPS645051A (en) 1987-06-29 1987-06-29 Compound semiconductor integrated circuit device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS645051A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8414368B2 (en) 2007-01-23 2013-04-09 Munters Corporation Fan damper

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8414368B2 (en) 2007-01-23 2013-04-09 Munters Corporation Fan damper

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