JPS6414960A - Semiconductor element - Google Patents

Semiconductor element

Info

Publication number
JPS6414960A
JPS6414960A JP62169890A JP16989087A JPS6414960A JP S6414960 A JPS6414960 A JP S6414960A JP 62169890 A JP62169890 A JP 62169890A JP 16989087 A JP16989087 A JP 16989087A JP S6414960 A JPS6414960 A JP S6414960A
Authority
JP
Japan
Prior art keywords
fet
base layer
layer
electrode
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62169890A
Other languages
Japanese (ja)
Inventor
Yoichi Maeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP62169890A priority Critical patent/JPS6414960A/en
Publication of JPS6414960A publication Critical patent/JPS6414960A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/7302—Bipolar junction transistors structurally associated with other devices

Abstract

PURPOSE:To obtain a higher input impedance than that of the existing element by providing a FET formed using a part of diffused region of element for bipolar IC and executing control of base current of transistor with a gate voltage of such FET. CONSTITUTION:A collector electrode 13C is formed on a collector electrode leadout diffused layer 12, while a base electrode 13B on the base layer 14 of the reverse conductivity type. This base layer 14 also works as the drain region of FET. Moreover, the base layer 24 is formed separately from the base layer 14, the emitter layer 15 of N<+>, as an example of the reverse conductivity type is formed on the upper side of such base layer 24, and the emitter electrode 13E is connected thereto. Moreover, the base layer 24 also works as the source region corresponding to the FET drain region and the gate electrode 13G is formed on the insulation film 16 between the surfaces on the drain and source regions of these FETs and a FET is formed using the diffused layer (region) of transistor.
JP62169890A 1987-07-09 1987-07-09 Semiconductor element Pending JPS6414960A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62169890A JPS6414960A (en) 1987-07-09 1987-07-09 Semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62169890A JPS6414960A (en) 1987-07-09 1987-07-09 Semiconductor element

Publications (1)

Publication Number Publication Date
JPS6414960A true JPS6414960A (en) 1989-01-19

Family

ID=15894856

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62169890A Pending JPS6414960A (en) 1987-07-09 1987-07-09 Semiconductor element

Country Status (1)

Country Link
JP (1) JPS6414960A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03203263A (en) * 1989-12-28 1991-09-04 Nec Kansai Ltd Constant-voltage device
US5422502A (en) * 1993-12-09 1995-06-06 Northern Telecom Limited Lateral bipolar transistor
JP2006322481A (en) * 2005-05-17 2006-11-30 Uchiyama Mfg Corp Head cover gasket positioning structure

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03203263A (en) * 1989-12-28 1991-09-04 Nec Kansai Ltd Constant-voltage device
US5422502A (en) * 1993-12-09 1995-06-06 Northern Telecom Limited Lateral bipolar transistor
JP2006322481A (en) * 2005-05-17 2006-11-30 Uchiyama Mfg Corp Head cover gasket positioning structure

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