KR880001058A - 헤테로 접합형 바이폴러트랜지스터의 제조방법 - Google Patents
헤테로 접합형 바이폴러트랜지스터의 제조방법 Download PDFInfo
- Publication number
- KR880001058A KR880001058A KR870002718A KR870002718A KR880001058A KR 880001058 A KR880001058 A KR 880001058A KR 870002718 A KR870002718 A KR 870002718A KR 870002718 A KR870002718 A KR 870002718A KR 880001058 A KR880001058 A KR 880001058A
- Authority
- KR
- South Korea
- Prior art keywords
- manufacturing
- bipolar transistor
- heterojunction bipolar
- region
- base region
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims 3
- 238000000034 method Methods 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims 1
- 238000000605 extraction Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/6631—Bipolar junction transistors [BJT] with an active layer made of a group 13/15 material
- H01L29/66318—Heterojunction transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41708—Emitter or collector electrodes for bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
- H01L29/7371—Vertical transistors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/011—Bipolar transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도A 내지 H는 실시예의 공정도. 제2도는 다른 실시예의 단면도.
Claims (1)
- 화합물반도체기판위에 콜랙터영역, 베이스영역, 이미터영역을 차례로 형성하여 이루어진 헤테로 접합형 바이폴러트랜지스터의 제조방법에 있어서, 상기 베이스영역의 전극취출영역에 형성한 오목부내에서, 또한 상기 베이스영역 위에 접하여 상기 이미터영역을 에피택셜성장으로 형성하는 것을 특징으로 하는 헤테로접합형 바이폴러트랜지스터의 제조방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61150497A JPH0797589B2 (ja) | 1986-06-26 | 1986-06-26 | ヘテロ接合型バイポ−ラトランジスタの製造方法 |
JP86-150497 | 1986-06-26 | ||
JP150497 | 1986-06-26 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR880001058A true KR880001058A (ko) | 1988-03-31 |
KR950011018B1 KR950011018B1 (ko) | 1995-09-27 |
Family
ID=15498155
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019870002718A KR950011018B1 (ko) | 1986-06-26 | 1987-03-25 | 헤테로접합형 바이폴라트랜지스터의 제조방법 |
Country Status (3)
Country | Link |
---|---|
US (1) | US4751195A (ko) |
JP (1) | JPH0797589B2 (ko) |
KR (1) | KR950011018B1 (ko) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2604828B1 (fr) * | 1986-10-06 | 1988-12-23 | Centre Nat Rech Scient | Procede de fabrication d'une diode p+nn+ et d'un transistor bipolaire comportant cette diode, utilisant l'effet de neutralisation des atomes donneurs par l'hydrogene atomique |
US5063427A (en) * | 1987-10-13 | 1991-11-05 | Northrop Corporation | Planar bipolar transistors including heterojunction transistors |
US4839303A (en) * | 1987-10-13 | 1989-06-13 | Northrop Corporation | Planar bipolar transistors including heterojunction transistors and method |
JP2526626B2 (ja) * | 1988-03-14 | 1996-08-21 | 日本電気株式会社 | ヘテロ接合バイポ―ラ・トランジスタおよびその製造方法 |
JPH01238161A (ja) * | 1988-03-18 | 1989-09-22 | Fujitsu Ltd | 半導体装置及びその製造方法 |
EP0387010A3 (en) * | 1989-03-08 | 1990-10-10 | Matsushita Electric Industrial Co., Ltd. | Hetero-junction bipolar transistor |
US5028549A (en) * | 1989-04-10 | 1991-07-02 | Rockwell International | Etched back edge isolation process for heterojunction bipolar transistors |
JPH02280340A (ja) * | 1989-04-21 | 1990-11-16 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
US5227317A (en) * | 1989-04-21 | 1993-07-13 | Hitachi, Ltd. | Method of manufacturing semiconductor integrated circuit bipolar transistor device |
JP2793837B2 (ja) * | 1989-05-10 | 1998-09-03 | 株式会社日立製作所 | 半導体装置の製造方法およびヘテロ接合バイポーラトランジスタ |
US5340755A (en) * | 1989-09-08 | 1994-08-23 | Siemens Aktiegensellschaft | Method of making planar heterobipolar transistor having trenched isolation of the collector terminal |
US4914049A (en) * | 1989-10-16 | 1990-04-03 | Motorola, Inc. | Method of fabricating a heterojunction bipolar transistor |
US5053346A (en) * | 1990-01-12 | 1991-10-01 | Texas Instruments Incorporated | Method for making a high speed gallium arsenide transistor |
US5027182A (en) * | 1990-10-11 | 1991-06-25 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | High-gain AlGaAs/GaAs double heterojunction Darlington phototransistors for optical neural networks |
US5171697A (en) * | 1991-06-28 | 1992-12-15 | Texas Instruments Incorporated | Method of forming multiple layer collector structure for bipolar transistors |
EP0562272A3 (en) * | 1992-03-23 | 1994-05-25 | Texas Instruments Inc | Microwave heterojunction bipolar transistors with emitters designed for high power applications and method for fabricating same |
US5365089A (en) * | 1992-12-23 | 1994-11-15 | International Business Machines Corporation | Double heterojunction bipolar transistor and the method of manufacture therefor |
US5436181A (en) * | 1994-04-18 | 1995-07-25 | Texas Instruments Incorporated | Method of self aligning an emitter contact in a heterojunction bipolar transistor |
US5939738A (en) * | 1995-10-25 | 1999-08-17 | Texas Instruments Incorporated | Low base-resistance bipolar transistor |
JP2868083B2 (ja) * | 1996-12-02 | 1999-03-10 | 日本電気株式会社 | 半導体デバイスの製造方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6174367A (ja) * | 1984-09-20 | 1986-04-16 | Matsushita Electric Ind Co Ltd | ヘテロ接合バイポ−ラトランジスタ |
JPS61112373A (ja) * | 1984-11-07 | 1986-05-30 | Matsushita Electric Ind Co Ltd | ヘテロ接合バイポ−ラトランジスタ |
-
1986
- 1986-06-26 JP JP61150497A patent/JPH0797589B2/ja not_active Expired - Fee Related
-
1987
- 1987-03-25 KR KR1019870002718A patent/KR950011018B1/ko not_active IP Right Cessation
- 1987-06-25 US US07/066,112 patent/US4751195A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR950011018B1 (ko) | 1995-09-27 |
JPH0797589B2 (ja) | 1995-10-18 |
JPS636877A (ja) | 1988-01-12 |
US4751195A (en) | 1988-06-14 |
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