JPS57120365A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57120365A
JPS57120365A JP56006873A JP687381A JPS57120365A JP S57120365 A JPS57120365 A JP S57120365A JP 56006873 A JP56006873 A JP 56006873A JP 687381 A JP687381 A JP 687381A JP S57120365 A JPS57120365 A JP S57120365A
Authority
JP
Japan
Prior art keywords
region
type
emitter
subsequently
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56006873A
Other languages
Japanese (ja)
Inventor
Tomooki Hara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56006873A priority Critical patent/JPS57120365A/en
Publication of JPS57120365A publication Critical patent/JPS57120365A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To increase an amplification ratio of the current without adding an additional process by a method wherein an emitter region is formed in a double structure including a deep area of high density and a shallow area of low density and no buried layer is provided under the emitter region. CONSTITUTION:N<+> type buried regions 2 and 2' are formed on the surface of a P type substrate 1. Subsequently, a P<+> type buried layer 3 is formed in the upper face of the substrate 1. Subsequently, an N type epitaxial layer 4 is grown on the substrate 1 to form an insulation separated region 5 and a P type emitter first region 5'. At this time, the region 3 is blush with the region 5 by rising it to the region 4. In this case, the regions 5, 5' must be avoided to be formed on the region 2. Subsequently, an imitter second region and collector regions 6, 6' of a transverse P-N-P transistor are formed on the surface of the layer 4, thereafter an N<+> type base contact region 7 is formed. Thereafter, electrode patterns 9-11 are formed. According to such a constitution, an emitter efficiency is rised considerably and since a hole implanted from the emitter region to the vertical direction doesn't serve as a base current, a high amplification ratio of the current can be obtained.
JP56006873A 1981-01-19 1981-01-19 Semiconductor device Pending JPS57120365A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56006873A JPS57120365A (en) 1981-01-19 1981-01-19 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56006873A JPS57120365A (en) 1981-01-19 1981-01-19 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS57120365A true JPS57120365A (en) 1982-07-27

Family

ID=11650339

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56006873A Pending JPS57120365A (en) 1981-01-19 1981-01-19 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57120365A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06196638A (en) * 1993-10-01 1994-07-15 Sony Corp Semiconductor device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4946512A (en) * 1972-09-12 1974-05-04
JPS4998981A (en) * 1973-01-24 1974-09-19
JPS51884A (en) * 1974-06-20 1976-01-07 Mitsubishi Electric Corp RATERARUGATATORANJISUTANOSEIZOHOHO
JPS51140490A (en) * 1975-05-30 1976-12-03 Hitachi Ltd Lateral transistor
JPS53107279A (en) * 1977-03-01 1978-09-19 Sony Corp Semiconductor device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4946512A (en) * 1972-09-12 1974-05-04
JPS4998981A (en) * 1973-01-24 1974-09-19
JPS51884A (en) * 1974-06-20 1976-01-07 Mitsubishi Electric Corp RATERARUGATATORANJISUTANOSEIZOHOHO
JPS51140490A (en) * 1975-05-30 1976-12-03 Hitachi Ltd Lateral transistor
JPS53107279A (en) * 1977-03-01 1978-09-19 Sony Corp Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06196638A (en) * 1993-10-01 1994-07-15 Sony Corp Semiconductor device

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